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11. 发明申请

US20120248452A1 OPTICAL SENSOR 有权
标题翻译：光传感器
公开(公告)号：US20120248452A1
公开(公告)日：2012-10-04
申请号：US13209188
申请日：2011-08-12
申请人： Yun Jong YEO , Hong-Kee CHIN , Byeong Hoon CHO , Ki-Hun JEONG , Jung Suk BANG , Woong Kwon KIM , Sung Ryul KIM , Dae Cheol KIM , Kun-Wook HAN
发明人： Yun Jong YEO , Hong-Kee CHIN , Byeong Hoon CHO , Ki-Hun JEONG , Jung Suk BANG , Woong Kwon KIM , Sung Ryul KIM , Dae Cheol KIM , Kun-Wook HAN
IPC分类号： H01L31/0376
CPC分类号： G06F3/0412 , G06F3/0421 , G06F2203/04103
摘要： An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.
摘要翻译：提供了防止半导体层损坏并防止源电极和漏极的断开和短路的光学传感器以及光学传感器的制造方法。光学传感器包括：基板; 包括设置在所述基板上的第一半导体层的红外线感测薄膜晶体管; 包括设置在所述基板上的第二半导体层的可见光线感测薄膜晶体管; 开关薄膜晶体管，其包括设置在所述基板上的第三半导体层; 以及半导体钝化层，其包围第一半导体层，第二半导体层和第三半导体层中的至少一个的端部的上表面和侧面。

12. 发明申请

US20110297931A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权
标题翻译：薄膜晶体管阵列基板的制作方法
公开(公告)号：US20110297931A1
公开(公告)日：2011-12-08
申请号：US13210282
申请日：2011-08-15
申请人： Dong-Ju YANG , Yu-Gwang JEONG , Ki-Yeup LEE , Sang-Gab KIM , Yun-Jong YEO , Shin-Il CHOI , Hong-Kee CHIN , Seung-Ha CHOI , Jung-Suk BANG
发明人： Dong-Ju YANG , Yu-Gwang JEONG , Ki-Yeup LEE , Sang-Gab KIM , Yun-Jong YEO , Shin-Il CHOI , Hong-Kee CHIN , Seung-Ha CHOI , Jung-Suk BANG
IPC分类号： H01L29/786
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/7869
摘要： A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented.
摘要翻译：提出了制造薄膜晶体管阵列基板的方法。该方法需要在绝缘基板上形成栅极互连线，在栅极互连线上形成栅极绝缘层，在半导体层上形成半导体层和数据互连线，依次形成多个钝化层，将钝化层蚀刻到作为数据互连线的延伸线的漏电极。在该阶段暴露的漏电极的部分是漏极电极 - 像素电极接触部分的一部分。形成连接到漏电极的像素电极。两个钝化层具有相同的组成，但是在不同的温度下进行处理。还提出了以上述方式制备的薄膜晶体管。

13. 发明授权

US08017459B2 Method of fabricating a thin film transistor array substrate 有权
标题翻译：制造薄膜晶体管阵列基板的方法
公开(公告)号：US08017459B2
公开(公告)日：2011-09-13
申请号：US12484116
申请日：2009-06-12
申请人： Dong-Ju Yang , Yu-Gwang Jeong , Ki-Yeup Lee , Sang-Gab Kim , Yun-Jong Yeo , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Jung-Suk Bang
发明人： Dong-Ju Yang , Yu-Gwang Jeong , Ki-Yeup Lee , Sang-Gab Kim , Yun-Jong Yeo , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Jung-Suk Bang
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L29/7869
摘要： A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented.
摘要翻译：提出了制造薄膜晶体管阵列基板的方法。该方法需要在绝缘基板上形成栅极互连线，在栅极互连线上形成栅极绝缘层，在半导体层上形成半导体层和数据互连线，依次形成多个钝化层，将钝化层蚀刻到作为数据互连线的延伸线的漏电极。在该阶段暴露的漏电极的部分是漏极电极 - 像素电极接触部分的一部分。形成连接到漏电极的像素电极。两个钝化层具有相同的组成，但是在不同的温度下进行处理。还提出了以上述方式制备的薄膜晶体管。

14. 发明授权

US09229283B2 Display substrate including organic layer and method of manufacturing the same 有权
标题翻译：显示基板包括有机层及其制造方法
公开(公告)号：US09229283B2
公开(公告)日：2016-01-05
申请号：US13488733
申请日：2012-06-05
申请人： Yun-Jong Yeo , Yu-Gwang Jeong , Hong-Kee Chin , Sang-Gab Kim , Jeong-Min Park , Ji-Young Park
发明人： Yun-Jong Yeo , Yu-Gwang Jeong , Hong-Kee Chin , Sang-Gab Kim , Jeong-Min Park , Ji-Young Park
IPC分类号： H01L27/00 , G02F1/1343 , H01L27/12
CPC分类号： G02F1/134363 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L27/1288
摘要： A display substrate includes a base substrate, a switching element, a protecting layer, an organic layer, a first pixel electrode and a second pixel electrode. The switching element is on the base substrate, and includes a gate electrode, a source electrode and a drain electrode. The protecting layer is on the switching element, and includes a first hole exposing the drain electrode. The organic layer is on the protecting layer, and includes a second hole which exposes a side surface of the protecting layer which defines the first hole and exposes a top surface of the protecting layer which is adjacent to the side surface of the protecting layer. The first pixel electrode is on the organic layer. The second pixel electrode overlaps the first pixel electrode, and is electrically connected to the drain electrode via the first and second holes.
摘要翻译：显示基板包括基底基板，开关元件，保护层，有机层，第一像素电极和第二像素电极。开关元件在基底基板上，并且包括栅电极，源电极和漏电极。保护层位于开关元件上，并且包括暴露漏电极的第一孔。有机层位于保护层上，并且包括第二孔，其露出限定第一孔的保护层的侧表面，并露出与保护层的侧表面相邻的保护层的顶表面。第一像素电极在有机层上。第二像素电极与第一像素电极重叠，并且经由第一和第二孔电连接到漏电极。

15. 发明授权

US08598587B2 Optical sensor 有权
标题翻译：光学传感器
公开(公告)号：US08598587B2
公开(公告)日：2013-12-03
申请号：US13209188
申请日：2011-08-12
申请人： Yun Jong Yeo , Hong-Kee Chin , Byeong Hoon Cho , Ki-Hun Jeong , Jung Suk Bang , Woong Kwon Kim , Sung Ryul Kim , Dae Cheol Kim , Kun-Wook Han
发明人： Yun Jong Yeo , Hong-Kee Chin , Byeong Hoon Cho , Ki-Hun Jeong , Jung Suk Bang , Woong Kwon Kim , Sung Ryul Kim , Dae Cheol Kim , Kun-Wook Han
IPC分类号： H01L31/0376
CPC分类号： G06F3/0412 , G06F3/0421 , G06F2203/04103
摘要： An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.
摘要翻译：提供了防止半导体层损坏并防止源电极和漏极的断开和短路的光学传感器以及光学传感器的制造方法。光学传感器包括：基板; 包括设置在所述基板上的第一半导体层的红外线感测薄膜晶体管; 包括设置在所述基板上的第二半导体层的可见光线感测薄膜晶体管; 开关薄膜晶体管，其包括设置在所述基板上的第三半导体层; 以及半导体钝化层，其包围第一半导体层，第二半导体层和第三半导体层中的至少一个的端部的上表面和侧面。

16. 发明申请

US20130146900A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20130146900A1
公开(公告)日：2013-06-13
申请号：US13488733
申请日：2012-06-05
申请人： Yun-Jong YEO , Yu-Gwang JEONG , Hong-Kee CHIN , Sang-Gab KIM , Jeong-Min PARK , Ji-Young PARK
发明人： Yun-Jong YEO , Yu-Gwang JEONG , Hong-Kee CHIN , Sang-Gab KIM , Jeong-Min PARK , Ji-Young PARK
IPC分类号： H01L33/62
CPC分类号： G02F1/134363 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L27/1288
摘要： A display substrate includes a base substrate, a switching element, a protecting layer, an organic layer, a first pixel electrode and a second pixel electrode. The switching element is on the base substrate, and includes a gate electrode, a source electrode and a drain electrode. The protecting layer is on the switching element, and includes a first hole exposing the drain electrode. The organic layer is on the protecting layer, and includes a second hole which exposes a side surface of the protecting layer which defines the first hole and exposes a top surface of the protecting layer which is adjacent to the side surface of the protecting layer. The first pixel electrode is on the organic layer. The second pixel electrode overlaps the first pixel electrode, and is electrically connected to the drain electrode via the first and second holes.
摘要翻译：显示基板包括基底基板，开关元件，保护层，有机层，第一像素电极和第二像素电极。开关元件在基底基板上，并且包括栅电极，源电极和漏电极。保护层位于开关元件上，并且包括暴露漏电极的第一孔。有机层位于保护层上，并且包括第二孔，其露出限定第一孔的保护层的侧表面，并露出与保护层的侧表面相邻的保护层的顶表面。第一像素电极在有机层上。第二像素电极与第一像素电极重叠，并且经由第一和第二孔电连接到漏电极。

17. 发明授权

US08400588B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08400588B2
公开(公告)日：2013-03-19
申请号：US12900433
申请日：2010-10-07
申请人： Byung-Duk Yang , Eun-Guk Lee , Sang-Ki Kwak , Dong-Yoon Kim , Yun-Jong Yeo
发明人： Byung-Duk Yang , Eun-Guk Lee , Sang-Ki Kwak , Dong-Yoon Kim , Yun-Jong Yeo
IPC分类号： G02F1/1335
CPC分类号： G02F1/1335
摘要： A liquid crystal display according to an exemplary embodiment of the present invention includes: a first substrate; a first signal line disposed on the first substrate, a thin film transistor connected with the first signal line, a first color filter and a second color filter disposed on the first substrate; a colored member disposed on the first color filter and the second color filter; and a pixel electrode disposed on the first color filter and the second color filter and the colored member, wherein the first color filter and the second color filter are partially overlapped with each other and the height of the colored member disposed at the overlap between the first color filter and the second color filter is greater than the height of the colored member disposed not at the overlap.
摘要翻译：根据本发明的示例性实施例的液晶显示器包括：第一基板; 设置在第一基板上的第一信号线，与第一信号线连接的薄膜晶体管，设置在第一基板上的第一滤色器和第二滤色器; 设置在所述第一滤色器和所述第二滤色器上的着色部件; 以及设置在所述第一滤色器和所述第二滤色器和所述着色部件上的像素电极，其中所述第一滤色器和所述第二滤色器彼此部分重叠，并且所述着色部件的高度设置在所述第一滤色器滤色器和第二滤色器大于被设置为不重叠的着色部件的高度。

18. 发明申请

US20120188204A1 TOUCH SENSING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：触摸感应基板及其制造方法
公开(公告)号：US20120188204A1
公开(公告)日：2012-07-26
申请号：US13243737
申请日：2011-09-23
申请人： Yun-Jong YEO , Byeong-Hoon CHO , Ki-Hun JEONG , Hong-Kee CHIN , Jung-Suk BANG , Woong-Kwon KIM , Sung-Ryul KIM , Hee-Joon KIM , Dae-Cheol KIM , Kun-Wook HAN
发明人： Yun-Jong YEO , Byeong-Hoon CHO , Ki-Hun JEONG , Hong-Kee CHIN , Jung-Suk BANG , Woong-Kwon KIM , Sung-Ryul KIM , Hee-Joon KIM , Dae-Cheol KIM , Kun-Wook HAN
IPC分类号： G06F3/042 , H01L21/336
CPC分类号： G06F3/0412 , G06F3/042 , G06F2203/04103
摘要： A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.
摘要翻译：触摸感测基板包括基板，第一光感测元件，第二光感测元件和第一偏置线。第一感光元件包括第一栅电极，与第一栅电极重叠的第一有源图案，与第一有源图案部分重叠的第一源电极和与第一有源图案部分重叠的第一漏电极。第二感光元件包括第二栅电极，与第二栅电极重叠的第二有源图案，与第二有源图案部分重叠的第二源电极和与第二有源图案部分重叠的第二漏电极。第一偏置线连接到第一和第二栅电极。

19. 发明申请

US20100148769A1 NON-CONTACT PLASMA-MONITORING APPARATUS AND METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：非接触式等离子体监测装置和方法和等离子体处理装置
公开(公告)号：US20100148769A1
公开(公告)日：2010-06-17
申请号：US12571364
申请日：2009-09-30
申请人： SHIN-II CHOI , HONG-KEE CHIN , SANG-GAB KIM , KI-YEUP LEE , DONG-JU YANG , YU-GWANG JEONG , SEUNG-HA CHOI , YUN-JONG YEO , JI-YOUNG PARK , HYUNG-JUN KIM , SANG-SUN LEE
发明人： SHIN-II CHOI , HONG-KEE CHIN , SANG-GAB KIM , KI-YEUP LEE , DONG-JU YANG , YU-GWANG JEONG , SEUNG-HA CHOI , YUN-JONG YEO , JI-YOUNG PARK , HYUNG-JUN KIM , SANG-SUN LEE
IPC分类号： G01R33/12
CPC分类号： G01R33/12
摘要： A non-contact plasma-monitoring apparatus and a non-contact plasma-monitoring method are provided. The non-contact plasma-monitoring apparatus is installed in a plasma processing apparatus including a processing chamber and a power supply unit and measures at least one of an electric field and a magnetic field, which are created around power supply wiring connecting the process chamber to the power supply unit, without physically contacting the power supply wiring.
摘要翻译：提供非接触式等离子体监测装置和非接触等离子体监测方法。非接触等离子体监测装置安装在包括处理室和电源单元的等离子体处理装置中，并且测量电场和磁场中的至少一个，其围绕连接处理室的电源布线电源单元，没有物理接触电源线。

20. 发明授权

US08450740B2 Visible sensing transistor, display panel and manufacturing method thereof 有权
公开(公告)号：US08450740B2
公开(公告)日：2013-05-28
申请号：US13208040
申请日：2011-08-11
申请人： Dae-Cheol Kim , Sung-Ryul Kim , Yun-Jong Yeo , Hong-Kee Chin , Ki-Hun Jeong
发明人： Dae-Cheol Kim , Sung-Ryul Kim , Yun-Jong Yeo , Hong-Kee Chin , Ki-Hun Jeong
IPC分类号： H01L29/04
CPC分类号： G02F1/1368 , G02F1/13338 , G02F2001/13312 , H01L31/1136 , H01L31/12
摘要： A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

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