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1. 发明申请

US20120248452A1 OPTICAL SENSOR 有权
标题翻译：光传感器
公开(公告)号：US20120248452A1
公开(公告)日：2012-10-04
申请号：US13209188
申请日：2011-08-12
申请人： Yun Jong YEO , Hong-Kee CHIN , Byeong Hoon CHO , Ki-Hun JEONG , Jung Suk BANG , Woong Kwon KIM , Sung Ryul KIM , Dae Cheol KIM , Kun-Wook HAN
发明人： Yun Jong YEO , Hong-Kee CHIN , Byeong Hoon CHO , Ki-Hun JEONG , Jung Suk BANG , Woong Kwon KIM , Sung Ryul KIM , Dae Cheol KIM , Kun-Wook HAN
IPC分类号： H01L31/0376
CPC分类号： G06F3/0412 , G06F3/0421 , G06F2203/04103
摘要： An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.
摘要翻译：提供了防止半导体层损坏并防止源电极和漏极的断开和短路的光学传感器以及光学传感器的制造方法。光学传感器包括：基板; 包括设置在所述基板上的第一半导体层的红外线感测薄膜晶体管; 包括设置在所述基板上的第二半导体层的可见光线感测薄膜晶体管; 开关薄膜晶体管，其包括设置在所述基板上的第三半导体层; 以及半导体钝化层，其包围第一半导体层，第二半导体层和第三半导体层中的至少一个的端部的上表面和侧面。

2. 发明申请

US20090250443A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090250443A1
公开(公告)日：2009-10-08
申请号：US12143465
申请日：2008-06-20
申请人： Sung Ryul KIM
发明人： Sung Ryul KIM
IPC分类号： B23K9/00
CPC分类号： H01L21/67069 , H01L21/67265
摘要： Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.
摘要翻译：提供了一种包括室，下电极，上电极和基板传感器的等离子体处理装置。腔室被配置成提供反应空间。下电极设置在腔室中的下部区域以在其上安装衬底。上部电极设置在室中的与下部电极相对的上部区域。衬底传感器设置在腔室上以感测衬底。这里，上电极包括安装在电极板的底部的电极板和绝缘板，并且在上电极中形成至少一个引导孔，以将从基板传感器输出的光引向基板。

3. 发明申请

US20080277064A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080277064A1
公开(公告)日：2008-11-13
申请号：US12140859
申请日：2008-06-17
申请人： Sung Ryul KIM
发明人： Sung Ryul KIM
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/3244 , H01J37/32568
摘要： There is provided a plasma processing apparatus including: a chamber; an insulating plate provided in an upper region in the chamber; a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and a lower electrode provided in a lower region in the chamber on which a substrate is seated, wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively.
摘要翻译：提供了一种等离子体处理装置，包括：室; 设置在所述室中的上部区域中的绝缘板; 接地电极，设置在所述室的侧壁上，并提供接地电压; 以及下部电极，其设置在所述腔室中位于其上的下部区域中，其中所述下部电极包括多个电极，并且将RF电压和所述接地电压分别交替地提供给相邻的两个电极。

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