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11. 发明申请

US20100161849A1 MULTI CHANNEL DATA TRANSFER DEVICE 审中-公开
标题翻译：多通道数据传输设备
公开(公告)号：US20100161849A1
公开(公告)日：2010-06-24
申请号：US12484500
申请日：2009-06-15
申请人： Jung-Hee SUK , Ik-Jae CHUN , Yil-Suk YANG , Se-Wan HEO , Tae-Moon ROH , Jong-Dae KIM
发明人： Jung-Hee SUK , Ik-Jae CHUN , Yil-Suk YANG , Se-Wan HEO , Tae-Moon ROH , Jong-Dae KIM
IPC分类号： G06F13/28
CPC分类号： G06F13/122
摘要： Provided is a multi channel data transfer device. The multi channel data transfer device includes: a plurality of channel control unit connected to a plurality of peripheral devices, respectively; a plurality of control registers storing setting data for controlling an operation of each of the plurality of channel controllers; and a common register controller delivering common setting data to all or part of the plurality of control registers, the common setting data being applied in common to all or part of the plurality of channel controllers.
摘要翻译：提供了一种多通道数据传送装置。多通道数据传送装置包括：分别连接到多个外围设备的多个信道控制单元; 多个控制寄存器，其存储用于控制多个信道控制器中的每一个的操作的设置数据; 以及公共寄存器控制器，其向所述多个控制寄存器的全部或一部分提供公共设置数据，所述公共设置数据被共同应用于所述多个通道控制器的全部或部分。

12. 发明申请

US20080292001A1 APPARATUS AND METHOD FOR CALCULATING SUM OF ABSOLUTE DIFFERENCES FOR MOTION ESTIMATION OF VARIABLE BLOCK 有权
标题翻译：用于计算可变块运动估计的绝对差异的装置和方法
公开(公告)号：US20080292001A1
公开(公告)日：2008-11-27
申请号：US12105745
申请日：2008-04-18
申请人： Yil Suk YANG , Jung Hee SUK , Chun Gi LYUH , Ik Jae CHUN , Tae Moon ROH , Jong Dae KIM , Ki Chul KIM , Jung Hoon KIM
发明人： Yil Suk YANG , Jung Hee SUK , Chun Gi LYUH , Ik Jae CHUN , Tae Moon ROH , Jong Dae KIM , Ki Chul KIM , Jung Hoon KIM
IPC分类号： H04N7/26
CPC分类号： H04N19/00521 , H04N19/102 , H04N19/122 , H04N19/134 , H04N19/436 , H04N19/57 , H04N19/61 , H04N19/86
摘要： Provided are an apparatus and method for calculating a Sum of Absolute Differences (SAD) for motion estimation of a variable block capable of parallelly calculating SAD values with respect to a plurality of current frame macroblocks at a time. The apparatus includes a PE array unit including at least one Processing Element (PE) that is aligned in the form of a matrix, and parallelly calculating a SAD value of at least one pixel provided in a plurality of serial current frame macroblocks, a local memory including current frame macroblock data, reference frame macroblock data, and reference frame search area data, and transmitting the data to each PE that is provided in the PE array unit, and a controller for making a command for the data that are provided in the local memory to be transmitted corresponding to at least one pixel, on which each PE provided in the PE array unit performs calculation.
摘要翻译：提供了一种用于计算能够相对于多个当前帧宏块同时并行计算SAD值的可变块的运动估计的绝对差（SAD）的装置和方法。该装置包括PE阵列单元，该PE阵列单元包括以矩阵的形式排列的至少一个处理元件（PE），并且并行地计算设置在多个串行当前帧宏块中的至少一个像素的SAD值，本地存储器包括当前帧宏块数据，参考帧宏块数据和参考帧搜索区域数据，以及将数据发送到在PE阵列单元中提供的每个PE，以及用于为在本地提供的数据进行命令的控制器要发送对应于至少一个像素的存储器，其中PE阵列单元中提供的每个PE执行计算。

13. 发明授权

US06770529B2 EDMOS device having a lattice type drift region and method of manufacturing the same 有权
标题翻译：具有晶格型漂移区域的EDMOS器件及其制造方法
公开(公告)号：US06770529B2
公开(公告)日：2004-08-03
申请号：US10611502
申请日：2003-06-30
申请人： Dae Woo Lee , Tae Moon Roh , II Yong Park , Yil Suk Yang , Jong Dae Kim
发明人： Dae Woo Lee , Tae Moon Roh , II Yong Park , Yil Suk Yang , Jong Dae Kim
IPC分类号： H01L218242
CPC分类号： H01L29/0634 , H01L29/7835
摘要： The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.
摘要翻译：本发明提供一种具有晶格型漂移区域的EDMOS（延伸漏极MOS）器件及其制造方法。在n沟道EDMOS（nEDMOS）的情况下，漂移区域具有晶格结构，其中具有高浓度的n晶格和具有低浓度的p晶格交替排列。当施加漏极电压时，耗尽层被n晶格和p晶格的pn结突然延伸，使得整个漂移区域容易耗尽。因此，器件的击穿电压增加，并且由于具有高浓度的n晶格，器件的导通电阻降低。

14. 发明授权

US06636435B2 Ferroelectric memory cell array and method of storing data using the same 有权
标题翻译：铁电存储单元阵列及使用其存储数据的方法
公开(公告)号：US06636435B2
公开(公告)日：2003-10-21
申请号：US10032987
申请日：2001-12-27
申请人： Yil Suk Yang , Tae Moon Roh , Jong Dae Kim , Byoung Gon Yu
发明人： Yil Suk Yang , Tae Moon Roh , Jong Dae Kim , Byoung Gon Yu
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： The present invention relates to a ferroelectric memory cell array formed of a single transistor, and method of storing data using the same. The ferroelectric memory cell array includes a plurality of word lines connected to gates of the memory cells located at respective rows, a plurality of bit lines connected to drains of the memory cells located at respective columns, a common source line commonly connecting sources of the memory cells, and a plurality of well lines each connected to wells in which the memory cells are each formed, wherein a bias voltage of an unit pulse shape is applied to a gate of a selected memory cell and a bias voltage of a pulse shape is applied to a well line. Therefore, the present invention allows a random access without a disturbance since data can be written by means of the polarity characteristic of the ferroelectric.
摘要翻译：本发明涉及由单个晶体管形成的铁电存储单元阵列，以及使用该晶体管存储数据的方法。铁电存储单元阵列包括连接到位于各行的存储单元的栅极的多条字线，连接到位于相应列的存储单元的漏极的多个位线，通常连接存储器的源极的公共源极线单元和多个井管线，每个阱管线连接到其中形成有存储单元的阱，其中单位脉冲形状的偏置电压被施加到所选存储单元的栅极并施加脉冲形状的偏置电压到一条井线因此，本发明允许无障碍地随机存取，因为可以通过铁电体的极性特性写入数据。

15. 发明授权

US06486047B2 Apparatus for forming strontium-tantalum-oxide thin film 有权
标题翻译：用于形成锶 - 氧化钽薄膜的设备
公开(公告)号：US06486047B2
公开(公告)日：2002-11-26
申请号：US09872279
申请日：2001-05-31
申请人： Won-Jae Lee , In-Kyu You , Yil-Suk Yang , Byoung-Gon Yu , Kyoung-Ik Cho
发明人： Won-Jae Lee , In-Kyu You , Yil-Suk Yang , Byoung-Gon Yu , Kyoung-Ik Cho
IPC分类号： H01L2126
CPC分类号： H01L21/0228 , C23C16/409 , C23C16/45542 , C23C16/45544 , C23C16/50 , H01L21/02194 , H01L21/02197 , H01L21/02274 , H01L21/31691 , Y10S438/905
摘要： An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.
摘要翻译：提供一种用于形成锶钽氧化物膜的装置及其使用原子层沉积工具的方法。在通过使用等离子体和原子层沉积沉积的锶钽氧化物膜中，其漏电流非常低，并且其介电常数的范围为30至100，这取决于那里的加热条件。因此，该方法提供了i）具有金属膜/铁电体/绝缘膜/硅的结构的NDRO型铁电体存储元件的绝缘膜的结构，ii）用氧化硅膜代替的栅极氧化膜，和iii）电致发光显示器（ELD）装置的绝缘膜。

16. 发明授权

US09083032B2 Lithium rechargeable battery having a mixed anode active material including nanotubes 有权
标题翻译：具有包括纳米管的混合阳极活性材料的锂可再充电电池
公开(公告)号：US09083032B2
公开(公告)日：2015-07-14
申请号：US13287100
申请日：2011-11-01
申请人： Young-Gi Lee , Kwang Man Kim , Min Gyu Choi , Kunyoung Kang , Yil Suk Yang , Jongdae Kim
发明人： Young-Gi Lee , Kwang Man Kim , Min Gyu Choi , Kunyoung Kang , Yil Suk Yang , Jongdae Kim
IPC分类号： H01M4/13 , H01M10/052 , H01M4/36 , H01M4/485 , H01M4/58 , H01M10/056 , H01M4/62
CPC分类号： H01M4/13 , H01M4/364 , H01M4/366 , H01M4/485 , H01M4/5825 , H01M4/625 , H01M10/052 , H01M10/056 , Y02E60/122
摘要： A lithium rechargeable battery includes a cathode plate having a cathode current collector layer; and a cathode layer composed of particles of a cathode active material; an anode plate that is spaced apart from the cathode plate and having an anode current collector layer and an anode layer composed a mixed anode active material that is a mixture including particles of a spinel lithium titanium oxide (Li4Ti5O12) and nanotubes of a lithium titanium oxide (LixTiO2, where 0
摘要翻译：锂可充电电池包括具有阴极集电器层的阴极板; 以及由正极活性物质的粒子构成的阴极层; 阳极板与阴极板间隔开并具有阳极集电器层和阳极层，阳极层由混合阳极活性材料构成，该混合阳极活性材料是包含尖晶石锂钛氧化物（Li 4 Ti 5 O 12）的颗粒和锂二氧化钛的纳米管的混合物（LixTiO 2，其中0

17. 发明授权

US08629020B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08629020B2
公开(公告)日：2014-01-14
申请号：US13228479
申请日：2011-09-09
申请人： Sang Gi Kim , Jin-Gun Koo , Seong Wook Yoo , Jong-Moon Park , Jin Ho Lee , Kyoung Il Na , Yil Suk Yang , Jongdae Kim
发明人： Sang Gi Kim , Jin-Gun Koo , Seong Wook Yoo , Jong-Moon Park , Jin Ho Lee , Kyoung Il Na , Yil Suk Yang , Jongdae Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/2255 , H01L29/0634 , H01L29/0653 , H01L29/1095 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.
摘要翻译：提供半导体器件及其制造方法。该方法包括：在第一导电类型的半导体衬底中形成沟槽; 在所述沟槽的侧壁和底表面上形成包含第二导电类型的掺杂剂的沟槽掺杂剂层; 通过将所述沟槽掺杂剂含量层中的掺杂剂扩散到所述半导体衬底中来形成掺杂区域; 并去除含沟槽掺杂剂层。

18. 发明申请

US20130157106A1 LITHIUM METAL POWDER-CARBON POWDER COMPOSITE ANODE FOR LITHIUM SECONDARY BATTERY AND LITHIUM METAL SECONDARY BATTERY COMPRISING THE SAME 审中-公开
标题翻译：用于锂二次电池的锂金属粉末碳粉复合阳极和包含该锂二次电池的锂金属二次电池
公开(公告)号：US20130157106A1
公开(公告)日：2013-06-20
申请号：US13478581
申请日：2012-05-23
申请人： Young Gi Lee , Kwang Man Kim , Yil Suk Yang , Jong Kee Kwon , Jong Dae Kim
发明人： Young Gi Lee , Kwang Man Kim , Yil Suk Yang , Jong Kee Kwon , Jong Dae Kim
IPC分类号： H01M10/058 , H01M10/0569 , H01M2/16 , H01M4/131 , H01M4/133 , H01M4/134 , H01M10/0566 , H01M10/0568
CPC分类号： H01M4/133 , H01M2/16 , H01M4/0435 , H01M4/134 , H01M4/366 , H01M4/382 , H01M4/587 , H01M4/62 , H01M10/0525
摘要： Provided are an anode in which lithium metal powder and carbon powder are physically mixed with each other to form a composite and the composite is applied as an anode layer, and a lithium metal secondary battery including the anode. The anode of the present invention may suppress the formation of lithium dendrites and the change in volume of cells generated in a rechargeable battery which uses a lithium metal anode and significantly improve the cycle life-span of a lithium metal secondary battery by physically mixing lithium metal particles and carbon particles having an equivalent average particle diameter with each other to be applied as an anode layer.
摘要翻译：提供了一种其中锂金属粉末和碳粉末彼此物理混合以形成复合材料并将该复合材料用作阳极层的阳极和包括该阳极的锂金属二次电池。本发明的阳极可以抑制锂枝晶的形成和在使用锂金属阳极的可再充电电池中产生的电池的体积变化，并通过物理混合锂金属显着地改善锂金属二次电池的循环寿命具有相等平均粒径的颗粒和碳颗粒作为阳极层。

19. 发明授权

US08378622B2 Energy and power management integrated circuit device 有权
标题翻译：能源和电力管理集成电路设备
公开(公告)号：US08378622B2
公开(公告)日：2013-02-19
申请号：US12708852
申请日：2010-02-19
申请人： Yil Suk Yang , Jong Dae Kim , Jae Woo Lee , Se Wan Heo , Moon Gyu Jang
发明人： Yil Suk Yang , Jong Dae Kim , Jae Woo Lee , Se Wan Heo , Moon Gyu Jang
IPC分类号： H01M10/44 , H02J1/00
CPC分类号： H02J7/0068 , H01M10/46 , Y10T307/25 , Y10T307/305 , Y10T307/391 , Y10T307/414
摘要： Provided is an energy and power management integrated circuit (IC) device. The energy and power management IC device includes a plurality of energy conversion devices for harvesting energy from respective energy conversion sources and converting the energy into electric energy, an energy management IC (EMIC) for converting the electric energy converted by the energy conversion devices into stable energy, a storage device for storing the energy or power converted by the EMIC, a power management IC (PMIC) for receiving and distributing the power stored in the storage device, and a plurality of output load devices for consuming the power distributed by the PMIC. Accordingly, it is possible to harvest energy in an environmentally friendly way and semi-permanently use the energy without changing a battery.
摘要翻译：提供了一种能量和电源管理集成电路（IC）装置。能量和电力管理IC装置包括多个能量转换装置，用于从各自的能量转换源收集能量并将能量转换成电能;能量管理IC（EMIC），用于将由能量转换装置转换的电能转换成稳定的能量，用于存储由EMIC转换的能量或功率的存储装置，用于接收和分配存储在存储装置中的电力的电力管理IC（PMIC）以及用于消耗由PMIC分配的功率的多个输出负载装置。因此，可以以环保的方式收获能量，并且半永久地使用能量而不改变电池。

20. 发明申请

US20110140680A1 APPARATUS AND METHOD FOR EXTRACTING MAXIMUM POWER FROM SOLAR CELL 失效
标题翻译：从太阳能电池提取最大功率的装置和方法
公开(公告)号：US20110140680A1
公开(公告)日：2011-06-16
申请号：US12878443
申请日：2010-09-09
申请人： Se Wan HEO , Yil Suk Yang , Jae Woo Lee , Moon Gyu Jang , Jong Dae Kim
发明人： Se Wan HEO , Yil Suk Yang , Jae Woo Lee , Moon Gyu Jang , Jong Dae Kim
IPC分类号： G05F3/02 , H02J7/00
CPC分类号： H02J7/35 , G05F1/67 , Y02E10/566 , Y02E10/58
摘要： An apparatus and method for extracting maximum power from a solar cell are provided. The apparatus includes a solar cell for producing power from solar energy, a maximum power extractor for generating a pulse width modulation signal for extracting the maximum power from the solar cell, and a DC-DC converter for adjusting an amount of current generated from the solar cell according to the pulse width modulation signal.
摘要翻译：提供一种从太阳能电池提取最大功率的装置和方法。该装置包括用于从太阳能产生电能的太阳能电池，用于产生用于从太阳能电池提取最大功率的脉宽调制信号的最大功率提取器，以及用于调节从太阳能产生的电流量的DC-DC转换器单元根据脉宽调制信号。

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