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11. 发明授权

US07033908B2 Methods of forming integrated circuit devices including insulation layers 失效
标题翻译：形成包括绝缘层的集成电路器件的方法
公开(公告)号：US07033908B2
公开(公告)日：2006-04-25
申请号：US10775677
申请日：2004-02-10
申请人： Yong-Won Cha , Won-Jin Kim
发明人： Yong-Won Cha , Won-Jin Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76837
摘要： Methods of forming an electronic device including a substrate and a raised pattern on the substrate are provided. For example, a first insulating layer may be formed on the raised pattern and on the substrate. More particularly, forming the first insulating layer may include forming a first portion of the first insulating layer using a first processing condition and forming a second portion of the first insulating layer using a second processing condition. After forming the first insulating layer including the first and second portions, portions of the first insulating layer may be removed to expose portions of the raised pattern while maintaining portions of the first insulating layer on the substrate. After removing portions of the first insulating layer, a second insulating layer may be formed on the exposed portions of the raised pattern and on the maintained portions of the first insulating layer.
摘要翻译：提供了在衬底上形成包括衬底和凸起图案的电子器件的方法。例如，可以在凸起图案和基板上形成第一绝缘层。更具体地，形成第一绝缘层可以包括使用第一处理条件形成第一绝缘层的第一部分，并且使用第二处理条件形成第一绝缘层的第二部分。在形成包括第一和第二部分的第一绝缘层之后，可以去除第一绝缘层的部分以暴露凸起图案的部分，同时保持基板上的第一绝缘层的部分。在去除第一绝缘层的部分之后，可以在凸起图案的暴露部分和第一绝缘层的保持部分上形成第二绝缘层。

12. 发明申请

US20050224983A1 Semiconductor structures and methods for forming patterns using nitrogen-free SiCOH anti-reflective layers 审中-公开
标题翻译：使用无氮SiCOH抗反射层形成图案的半导体结构和方法
公开(公告)号：US20050224983A1
公开(公告)日：2005-10-13
申请号：US10973165
申请日：2004-10-26
申请人： Won-jin Kim , Hyun Park , Chang-seob Kim , Mun-jun Kim , Hye-min Kim , Jin-gyun Kim
发明人： Won-jin Kim , Hyun Park , Chang-seob Kim , Mun-jun Kim , Hye-min Kim , Jin-gyun Kim
IPC分类号： G03F7/09 , H01L21/00 , H01L21/027 , H01L21/311 , H01L21/316 , H01L21/768
CPC分类号： H01L21/76802 , G03F7/091 , H01L21/02115 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/0276 , H01L21/31144 , H01L21/31633
摘要： A semiconductor structure includes a material layer on a substrate and to be patterned, an amorphous carbon layer on the material layer to be patterned, an N-free anti-reflective layer on the amorphous carbon layer, and a photoresist layer on the N-free anti-reflective layer. The N-free anti-reflective layer contains SiCXOYHZ as a main element. Related methods of patterning semiconductor structures also are provided.
摘要翻译：半导体结构包括在基板上的待图案化的材料层，待图案化的材料层上的无定形碳层，非晶碳层上的无N抗反射层，以及无N层的光致抗蚀剂层防反射层。不含N的抗反射层含有作为主要元素的碳化X O Y Y H。。。。。。。。。。。。。。。。。还提供了图案化半导体结构的相关方法。

13. 发明申请

US20130088668A1 LIQUID CRYSTAL DISPLAY DEVICE HAVING REDUCED COLOR SHIFT 有权
标题翻译：液晶显示装置，具有减少颜色转换
公开(公告)号：US20130088668A1
公开(公告)日：2013-04-11
申请号：US13428942
申请日：2012-03-23
申请人： Joo Hong SEO , Jeong Uk Heo , Won Jin Kim , Seung Jin Kim , Sun-Jung Lee , Sang-Hun Jung , Min Hee Son
发明人： Joo Hong SEO , Jeong Uk Heo , Won Jin Kim , Seung Jin Kim , Sun-Jung Lee , Sang-Hun Jung , Min Hee Son
IPC分类号： G02F1/1335 , G02F1/1337
CPC分类号： G02F1/133784 , G02F1/133707 , G02F1/134363 , G02F1/136227 , G02F1/136286 , G02F2001/134345 , G02F2001/134372
摘要： The present invention relates to a liquid crystal display device that prevents a color shift by allowing two sub-pixel areas to have the same transmittance. A liquid crystal display device according to the present invention includes a data line that includes: a connection portion having a direction of extension perpendicular to that of a gate line; a first portion oriented at a first angle with respect to a direction of extension of the connection portion; and a second portion oriented at a second angle different from the first angle with respect to the direction of extension of the connection portion, and wherein an angle between a rubbing direction of the liquid crystal and the connection portion satisfies θ L = θ 2 - θ 1 2 (where θL is the angle between the rubbing direction of the liquid crystal and the direction of extension of the connection portion, θ1: the first angle, θ2: the second angle).
摘要翻译：液晶显示装置技术领域本发明涉及通过使两个子像素区域具有相同的透射率来防止色移的液晶显示装置。根据本发明的液晶显示装置包括数据线，其包括：具有与栅极线的方向垂直的延伸方向的连接部分; 相对于连接部分的延伸方向以第一角度定向的第一部分; 以及相对于所述连接部的延伸方向以与所述第一角度不同的第二角度定向的第二部分，并且其中所述液晶的摩擦方向与所述连接部分之间的角度满足所述条件; L =＆thetas; 2 - ＆thetas; 1 2（其中＆L; L是液晶的摩擦方向与连接部的延伸方向之间的角度，＆amp; thetas; 1：第一角度＆amp; 2;第二角度）。

14. 发明申请

US20110240444A1 ROLLER FOR BELT CONVEYER 有权
标题翻译：皮带输送机滚子
公开(公告)号：US20110240444A1
公开(公告)日：2011-10-06
申请号：US13075750
申请日：2011-03-30
申请人： Won-Jin KIM
发明人： Won-Jin KIM
IPC分类号： B65G39/09
CPC分类号： B65G39/09 , B65G39/10 , B65G2207/48
摘要： A roller for a belt conveyer. A roller tube has an engraved groove for indicating the degree to which the surface of the roller is abraded. A shaft reinforcement member is provided in one end of the roller tube, connected to a shaft disposed inside the roller tube, and rotatably coupled to the belt conveyor. A dustproof cover closes one end of the roller tube, and the shaft reinforcement member extends through the dustproof cover. A bearing housing is fitted into the dustproof cover, with a bearing thereof being rotatably coupled to the outer circumference of the shaft reinforcement member. A flat spring is fitted into the bearing housing, and elastically supports one surface of the bearing, thereby controlling expansion or contraction of the bearing. An end cap is fixedly coupled to an outer surface of the dustproof cover in order to block impurities from entering the roller.
摘要翻译：用于皮带输送机的滚筒。辊管具有用于表示辊的表面被磨损的程度的雕刻槽。轴加强构件设置在辊管的一端中，连接到设置在辊管内部的轴，并且可旋转地联接到带式输送机。防尘盖封闭辊管的一端，轴加强件延伸穿过防尘罩。轴承座安装在防尘盖中，其轴承可旋转地联接到轴加强件的外周。一个扁平的弹簧装配到轴承座中，弹性地支撑轴承的一个表面，从而控制轴承的膨胀或收缩。端盖固定地连接到防尘盖的外表面，以阻止杂质进入辊。

15. 发明申请

US20080067571A1 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080067571A1
公开(公告)日：2008-03-20
申请号：US11594912
申请日：2006-11-09
申请人： Chang-Seob Kim , Jeong-Lim Nam , Won-Jin Kim , Guk-Hyon Yon
发明人： Chang-Seob Kim , Jeong-Lim Nam , Won-Jin Kim , Guk-Hyon Yon
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/115 , H01L29/4234 , H01L29/792
摘要： A memory device includes a charge trapping layer on a substrate, an insulating layer on the substrate adjacent to the charge trapping layer and exposing an upper surface of the charge trapping layer, a dielectric layer on the exposed charge trapping layer and on the insulating layer, and an electrode on the dielectric layer, the electrode corresponding to the charge trapping layer.
摘要翻译：存储器件包括衬底上的电荷俘获层，与电荷俘获层相邻的衬底上的绝缘层，并暴露电荷俘获层的上表面，暴露的电荷俘获层上的介电层和绝缘层上，和电介质层上的电极，电极对应于电荷捕获层。

16. 发明授权

US07645668B2 Charge trapping type semiconductor memory device and method of manufacturing the same 失效
标题翻译：电荷俘获型半导体存储器件及其制造方法
公开(公告)号：US07645668B2
公开(公告)日：2010-01-12
申请号：US11594912
申请日：2006-11-09
申请人： Chang-Seob Kim , Jeong-Lim Nam , Won-Jin Kim , Guk-Hyon Yon
发明人： Chang-Seob Kim , Jeong-Lim Nam , Won-Jin Kim , Guk-Hyon Yon
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/115 , H01L29/4234 , H01L29/792
摘要： A memory device includes a charge trapping layer on a substrate, an insulating layer on the substrate adjacent to the charge trapping layer and exposing an upper surface of the charge trapping layer, a dielectric layer on the exposed charge trapping layer and on the insulating layer, and an electrode on the dielectric layer, the electrode corresponding to the charge trapping layer.
摘要翻译：存储器件包括衬底上的电荷俘获层，与电荷俘获层相邻的衬底上的绝缘层，并暴露电荷俘获层的上表面，暴露的电荷俘获层上的介电层和绝缘层上，和电介质层上的电极，电极对应于电荷捕获层。

17. 发明授权

US06503829B2 Metal via contact of a semiconductor device and method for fabricating the same 失效
标题翻译：半导体器件的金属通孔接触及其制造方法
公开(公告)号：US06503829B2
公开(公告)日：2003-01-07
申请号：US09812564
申请日：2001-03-21
申请人： Won-Jin Kim , Seong-Ho Kim
发明人： Won-Jin Kim , Seong-Ho Kim
IPC分类号： H01L2144
CPC分类号： H01L21/76804 , H01L21/31116
摘要： A metal via contact of a semiconductor device and a method for fabricating the same, wherein the method includes sequentially forming a first insulating layer, a low dielectric SOG (Spin On Glass) layer, a second insulating layer and a silicon oxynitride (SiON) layer on a semiconductor substrate forming a photoresist pattern, using the photoresist pattern as an etching mask and wet etching the silicon oxynitride layer and a portion of the second insulating layer, using the same photoresist pattern as an etching mask and anisotropically etching remainder second insulating layer, the low dielectric SOG layer and the first insulating layer to form a via hole exposing a predetermined portion of the semiconductor substrate, removing the photoresist pattern, using radio frequency (RF) etching to remove a reverse slope of the via hole and forming a metal plug in the via hole.
摘要翻译：半导体器件的金属通孔接触及其制造方法，其中该方法包括顺序形成第一绝缘层，低电介质SOG（旋转玻璃）层，第二绝缘层和氮氧化硅（SiON）层在形成光致抗蚀剂图案的半导体衬底上，使用光致抗蚀剂图案作为蚀刻掩模，并且使用与蚀刻掩模相同的光致抗蚀剂图案和各向异性蚀刻剩余的第二绝缘层来湿式蚀刻氮氧化硅层和第二绝缘层的一部分，低电介质SOG层和第一绝缘层，以形成暴露半导体衬底的预定部分的通孔，去除光致抗蚀剂图案，使用射频（RF）蚀刻去除通孔的反向斜面并形成金属插塞在通孔中。

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