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11. 发明申请

US20080038889A1 Fin structure and method of manufacturing fin transistor adopting the fin structure 有权
标题翻译：翅片结构的翅片结构和制造方法
公开(公告)号：US20080038889A1
公开(公告)日：2008-02-14
申请号：US11826420
申请日：2007-07-16
申请人： Hans S. Cho , Young-soo Park , Wenxu Xianyu
发明人： Hans S. Cho , Young-soo Park , Wenxu Xianyu
IPC分类号： H01L21/336 , H01L21/36
CPC分类号： H01L29/66795 , H01L27/105 , H01L27/1052 , H01L29/785
摘要： Provided are a fin structure and a method of manufacturing a fin transistor adopting the fin structure. A plurality of mesa structures including sidewalls are formed on the substrate. A semiconductor layer is formed on the mesa structures. A capping layer is formed on the semiconductor layer. Thus, the semiconductor layer is protected by the capping layer and includes a portion which is to be formed as a fin structure. A portion of an upper portion of the capping layer is removed by planarizing, and thus a portion of the semiconductor layer on upper surfaces of the mesa structures is removed. As a result, fin structures are formed on sides of the mesa structures to be isolated from one another. Therefore, a fin structure having a very narrow width can be formed, and a thickness and a location of the fin structure can be easily controlled.
摘要翻译：提供一种翅片结构和制造采用鳍结构的鳍式晶体管的方法。在基板上形成包括侧壁的多个台面结构。在台面结构上形成半导体层。在半导体层上形成覆盖层。因此，半导体层被覆盖层保护，并且包括将被形成为翅片结构的部分。通过平坦化除去覆盖层的上部的一部分，从而去除台面结构的上表面上的半导体层的一部分。结果，翅片结构形成在台面结构的两侧以彼此隔离。因此，可以形成具有非常窄的宽度的翅片结构，并且可以容易地控制翅片结构的厚度和位置。

12. 发明申请

US20070287232A1 BOTTOM GATE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：底部薄膜薄膜晶体管及其制造方法
公开(公告)号：US20070287232A1
公开(公告)日：2007-12-13
申请号：US11760043
申请日：2007-06-08
申请人： Hyuck LIM , Young-soo PARK , Wenxu XIANYU , Hans S. CHO , Huaxiang YIN
发明人： Hyuck LIM , Young-soo PARK , Wenxu XIANYU , Hans S. CHO , Huaxiang YIN
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02686 , H01L27/1281
摘要： A method of manufacturing a bottom gate thin film transistor (“TFT”), in which a polycrystalline channel region having a large grain size is formed relatively simply and easily, includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the gate electrode, forming an amorphous semiconductor layer on the gate insulating layer, patterning the amorphous semiconductor layer to form an amorphous channel region on the gate electrode, melting the amorphous channel region using a laser annealing method to form a melted amorphous channel region, and crystallizing the melted amorphous channel region to form a laterally grown polycrystalline channel region.
摘要翻译：相对简单且容易地形成具有大晶粒尺寸的多晶硅沟道区的底栅薄膜晶体管（“TFT”）的制造方法包括：在基板上形成栅极绝缘层，形成栅极绝缘层所述基板覆盖所述栅极电极，在所述栅极绝缘层上形成非晶半导体层，图案化所述非晶半导体层以在所述栅电极上形成非晶态沟道区域，使用激光退火方法熔化所述非晶态沟道区域以形成熔融无定形并使熔融的无定形沟道区域结晶，形成横向生长的多晶沟道区域。

13. 发明申请

US20070284611A1 STRUCTURE OF STRAINED SILICON ON INSULATOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：绝缘子上的应变硅结构及其制造方法
公开(公告)号：US20070284611A1
公开(公告)日：2007-12-13
申请号：US11843166
申请日：2007-08-22
申请人： Young-soo PARK , Wenxu Xianyu , Takashi Noguchi
发明人： Young-soo PARK , Wenxu Xianyu , Takashi Noguchi
IPC分类号： H01L23/00
CPC分类号： H01L21/76259 , H01L21/32134 , H01L21/76256 , H01L27/1266 , H01L29/7842 , H01L29/78603 , H01L29/78687 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.
摘要翻译：提供了一种应变SOI结构和制造应变SOI结构的方法。应变SOI结构包括绝缘衬底，形成在绝缘衬底上的SiO 2层以及形成在SiO 2层上的应变硅层。

14. 发明申请

US20070187668A1 Crystal substrates and methods of fabricating the same 审中-公开
标题翻译：晶体基板及其制造方法
公开(公告)号：US20070187668A1
公开(公告)日：2007-08-16
申请号：US11598040
申请日：2006-11-13
申请人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L31/00 , C30B13/02 , C30B19/00 , H01L29/04
CPC分类号： C30B25/18 , C30B23/025 , H01L21/02381 , H01L21/0242 , H01L21/02521 , H01L21/02532 , H01L21/02538 , H01L21/02639 , H01L21/02675 , H01L21/30625
摘要： A single crystal substrate and method of fabricating the same are provided. The single crystal substrate includes an insulator having a window exposing a portion of a substrate, a selective epitaxial growth layer formed on the portion of the substrate exposed through the window and a single crystalline layer formed on the insulator and the selective epitaxial growth layer using the selective epitaxial growth layer as an epitaxial seed layer.
摘要翻译：提供单晶基板及其制造方法。单晶衬底包括具有暴露衬底的一部分的窗口的绝缘体，形成在通过窗口暴露的衬底的部分上的选择性外延生长层和在绝缘体上形成的单晶层和使用所述选择性外延生长层选择性外延生长层作为外延种子层。

15. 发明申请

US20060292313A1 Methods of forming a more highly-oriented silicon layer and substrate having the same 有权
标题翻译：形成更高取向硅层的方法和具有该硅层的基板的方法
公开(公告)号：US20060292313A1
公开(公告)日：2006-12-28
申请号：US11473067
申请日：2006-06-23
申请人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
发明人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
IPC分类号： C09K19/00
CPC分类号： C30B29/06 , Y10T428/10
摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.
摘要翻译：提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。所述方法可以包括在基底基板上形成铝（Al）层，通过在真空下重结晶Al层，形成更高取向的Al层，形成更高取向的γ-Al 2 O 在更高取向的Al层上和/或在更高取向的γ-Al 2 O 3上外延生长硅层3层 >层。该方法可用于制造具有较高载流子迁移率的半导体器件。

16. 发明申请

US20060267100A1 Semiconductor device including single crystal silicon layer and method of manufacturing semiconductor device 有权
标题翻译：包括单晶硅层的半导体器件和制造半导体器件的方法
公开(公告)号：US20060267100A1
公开(公告)日：2006-11-30
申请号：US11430117
申请日：2006-05-09
申请人： Takashi Noguchi , Hans Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaozin Zhang
发明人： Takashi Noguchi , Hans Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaozin Zhang
IPC分类号： H01L27/12
CPC分类号： H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L29/66772 , H01L29/7842 , Y10S257/903
摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
摘要翻译：包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。此外，P-MOS单晶TFT可以包括具有（100）的晶面和<100>的晶体方向的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层单晶TFT。

17. 发明授权

US09000485B2 Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same 有权
标题翻译：电极结构，包括其的氮化镓基半导体器件及其制造方法
公开(公告)号：US09000485B2
公开(公告)日：2015-04-07
申请号：US13489733
申请日：2012-06-06
申请人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
发明人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
IPC分类号： H01L29/20 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/08 , H01L29/49
CPC分类号： H01L21/28264 , H01L29/0843 , H01L29/2003 , H01L29/42364 , H01L29/49 , H01L29/66462 , H01L29/7787
摘要： An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.
摘要翻译：包括电极结构的电极结构，GaN基半导体器件及其制造方法可以包括在GaN基半导体层上的GaN基半导体层和电极结构。电极结构可以包括在电极元件和GaN基半导体层之间包括导电材料的电极元件和扩散层。扩散层可以包括相对于GaN基半导体层为n型掺杂剂的材料，并且扩散层可以接触GaN基半导体层。与扩散层接触的GaN基半导体层的区域可以掺杂有n型掺杂剂。扩散层的材料可以包括第4族元素。

18. 发明授权

US08999812B2 Graphene devices and methods of manufacturing the same 有权
标题翻译：石墨烯装置及其制造方法
公开(公告)号：US08999812B2
公开(公告)日：2015-04-07
申请号：US13475098
申请日：2012-05-18
申请人： Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
发明人： Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
IPC分类号： H01L29/16 , H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L29/78684 , H01L27/1266 , H01L29/1606 , H01L29/66045 , H01L29/66742 , H01L29/78603
摘要： A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
摘要翻译：石墨烯装置可以分别包括在沟道层的第一区域和第二区域上的包括石墨烯，第一电极和第二电极的沟道层，以及覆盖沟道层和第一和第二电极的覆盖层。第一和第二电极之间的沟道层的区域被覆盖层中的开口暴露。栅极绝缘层可以在覆盖层上以覆盖沟道层的区域，并且栅极可以在栅极绝缘层上。

19. 发明授权

US08723181B2 Stacked transistors and electronic devices including the same 有权
标题翻译：堆叠晶体管和包括其的电子器件
公开(公告)号：US08723181B2
公开(公告)日：2014-05-13
申请号：US12662272
申请日：2010-04-08
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
IPC分类号： H01L29/10
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/12 , H01L27/1281
摘要： Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate.
摘要翻译：堆叠晶体管和包括堆叠晶体管的电子器件。电子器件包括衬底，衬底上的第一晶体管，并且在第一有源层和第一栅极之间包括第一有源层，第一栅极和第一栅极绝缘层，与第一栅极间隔开的第一金属线在所述基板上，覆盖所述第一晶体管和所述第一金属线的第一绝缘层，以及在所述第一晶体管和所述第一金属线之间的所述第一绝缘层上的第二晶体管，并且包括第二有源层，第二栅极和第二栅极绝缘层，位于第二有源层和第二栅极之间。

20. 发明申请

US20130105863A1 ELECTRODE STRUCTURES, GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：电极结构，基于氮化镓的半导体器件及其制造方法
公开(公告)号：US20130105863A1
公开(公告)日：2013-05-02
申请号：US13489733
申请日：2012-06-06
申请人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
发明人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
IPC分类号： H01L29/778 , H01L21/338 , B82Y99/00
CPC分类号： H01L21/28264 , H01L29/0843 , H01L29/2003 , H01L29/42364 , H01L29/49 , H01L29/66462 , H01L29/7787
摘要： An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.
摘要翻译：包括电极结构的电极结构，GaN基半导体器件及其制造方法可以包括在GaN基半导体层上的GaN基半导体层和电极结构。电极结构可以包括在电极元件和GaN基半导体层之间包括导电材料的电极元件和扩散层。扩散层可以包括相对于GaN基半导体层为n型掺杂剂的材料，并且扩散层可以接触GaN基半导体层。与扩散层接触的GaN基半导体层的区域可以掺杂有n型掺杂剂。扩散层的材料可以包括第4族元素。

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