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11. 发明授权

US09293561B2 High voltage III-nitride semiconductor devices 有权
标题翻译：高电压III族氮化物半导体器件
公开(公告)号：US09293561B2
公开(公告)日：2016-03-22
申请号：US14262649
申请日：2014-04-25
申请人： Transphorm Inc.
发明人： Umesh Mishra , Lee McCarthy , Nicholas Fichtenbaum
IPC分类号： H01L29/66 , H01L29/20 , H01L29/205 , H01L29/778 , H01L21/02 , H01L29/207
CPC分类号： H01L29/66462 , H01L21/0254 , H01L21/02581 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/7787
摘要： A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer.
摘要翻译：描述了III-N器件具有缓冲层，缓冲层上的第一III-N材料层，与缓冲层相反侧的第一III-N材料层上的第二III-N材料层和分散体缓冲层和通道层之间的阻挡层。第一III-N材料层是沟道层，并且第一III-N材料层和第二III-N材料层之间的组成差异在第一III-N材料层中诱导2DEG沟道。在沟道层和分散阻挡层的界面处的负电荷的片材或分布限制电子远离缓冲层。

12. 发明授权

US09293458B2 Semiconductor electronic components and circuits 有权
标题翻译：半导体电子元件和电路
公开(公告)号：US09293458B2
公开(公告)日：2016-03-22
申请号：US14058089
申请日：2013-10-18
申请人： Transphorm Inc.
发明人： Primit Parikh , James Honea , Carl C. Blake, Jr. , Robert Coffie , Yifeng Wu , Umesh Mishra
IPC分类号： H03K17/687 , H01L27/088 , H01L21/8258 , H01L27/06 , H03K17/567 , H01L23/495 , H01L25/16 , H01L23/64 , H01L25/18
CPC分类号： H01L27/0883 , H01L21/8258 , H01L23/49562 , H01L23/49575 , H01L23/642 , H01L23/647 , H01L25/165 , H01L25/18 , H01L27/0605 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48257 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H03K17/567 , H01L2924/00
摘要： An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
摘要翻译：电子部件包括高压耗尽型晶体管和低压增强型晶体管，两者都封装在单个封装中。高电压耗尽型晶体管的源电极电连接到低电压增强型晶体管的漏电极，高电压耗尽型晶体管的漏极电连接到漏极引线单个封装，低电压增强型晶体管的栅电极电连接到单个封装的栅极引线，高电压耗尽型晶体管的栅极电连接到单个封装的附加引线并且低电压增强型晶体管的源电极电连接到单个封装的导电结构部分。

13. 发明申请

US20160042946A1 BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN SUBSTRATES 有权
公开(公告)号：US20160042946A1
公开(公告)日：2016-02-11
申请号：US14885943
申请日：2015-10-16
申请人： Transphorm Inc.
发明人： Stacia Keller , Brian L. Swenson , Nicholas Fichtenbaum
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L21/02507 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/02581 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum composition and a second buffer layer formed on the first buffer layer, the second buffer layer having a second aluminum composition. The buffer structure further includes a third buffer layer formed on the second buffer layer at a second interface, the third buffer layer having a third aluminum composition. The first aluminum composition decreases in the first buffer layer towards the interface and the second aluminum composition throughout the second buffer layer is greater than the first aluminum composition at the interface.

14. 发明授权

US09224721B2 Semiconductor power modules and devices 有权
标题翻译：半导体电源模块和器件
公开(公告)号：US09224721B2
公开(公告)日：2015-12-29
申请号：US14585705
申请日：2014-12-30
申请人： Transphorm Inc.
发明人： Yifeng Wu
IPC分类号： H01L25/00 , H01L25/16 , H01L25/07 , H05K1/02 , H03K17/16 , H01L23/12 , H01L23/367 , H01L27/088 , H01L29/20 , H01L29/78 , H01L23/552 , H01L23/64
CPC分类号： H01L25/50 , H01L23/12 , H01L23/3675 , H01L23/49822 , H01L23/49827 , H01L23/49844 , H01L23/552 , H01L23/642 , H01L25/074 , H01L25/117 , H01L25/16 , H01L25/165 , H01L27/0883 , H01L29/2003 , H01L29/7827 , H01L2224/48091 , H01L2924/13055 , H01L2924/30107 , H03K17/164 , H03K2217/0045 , H05K1/0218 , H05K1/0263 , H05K1/162 , H05K2201/10015 , H05K2201/10166 , H05K2201/10545 , H01L2924/00014 , H01L2924/00
摘要： An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion.
摘要翻译：描述了一种电子部件，其包括封装在第一封装中的第一晶体管，第一晶体管安装在第一封装的第一导电部分上，以及封装在第二封装中的第二晶体管，第二晶体管安装在第二导电第二包装的部分。所述部件还包括在第一金属层和第二金属层之间包括绝缘层的基板。所述第一封装在所述基板的一侧，所述第一导电部分与所述第一金属层电连接，所述第二封装在所述基板的另一侧，所述第二导电部分与所述第二金属层电连接。第一封装与第二封装相对，第一导电部分的第一区域的至少50％与第二导电部分的第二区域相对。

15. 发明授权

US09224671B2 III-N device structures and methods 有权
标题翻译： III-N器件结构和方法
公开(公告)号：US09224671B2
公开(公告)日：2015-12-29
申请号：US14522154
申请日：2014-10-23
申请人： Transphorm Inc.
发明人： Primit Parikh , Yuvaraj Dora , Yifeng Wu , Umesh Mishra , Nicholas Fichtenbaum , Rakesh K. Lal
IPC分类号： H01L29/66 , H01L29/423 , H01L29/12 , H01L21/18 , H01L23/34 , H01L29/10 , H01L29/16 , H01L29/20 , H01L29/778 , H01L21/02 , H01L21/48 , H01L21/762 , H01L29/30 , H01L23/373
CPC分类号： H01L23/34 , H01L21/02118 , H01L21/0254 , H01L21/486 , H01L21/76254 , H01L23/3732 , H01L23/3738 , H01L29/0657 , H01L29/1075 , H01L29/1608 , H01L29/2003 , H01L29/30 , H01L29/66431 , H01L29/778 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.
摘要翻译： III-N器件用III-N层，其上的电极，与III-N层和电极相邻的钝化层，与钝化层和电极相邻的厚绝缘层，能够转移大量的高导热载体远离III-N器件的热量，以及厚绝缘层和载体之间的结合层。接合层将厚绝缘层附着到载体上。厚的绝缘层可以具有精确控制的厚度并且是导热的。

16. 发明授权

US09209176B2 Semiconductor modules and methods of forming the same 有权
标题翻译：半导体模块及其形成方法
公开(公告)号：US09209176B2
公开(公告)日：2015-12-08
申请号：US13690103
申请日：2012-11-30
申请人： Transphorm Inc.
发明人： Yifeng Wu , Sung Hae Yea
IPC分类号： H01L27/088 , H01L21/58 , H03K17/16 , H01L27/06 , H01L23/373 , H01L25/065 , H01L25/07 , H01L23/498 , H01L23/00
CPC分类号： H01L23/49838 , H01L21/56 , H01L23/3735 , H01L23/49811 , H01L23/49866 , H01L23/552 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/80 , H01L24/85 , H01L25/0655 , H01L25/0657 , H01L25/072 , H01L25/074 , H01L25/50 , H01L27/0629 , H01L27/0883 , H01L29/2003 , H01L29/7787 , H01L2224/291 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/48091 , H01L2224/48105 , H01L2224/48137 , H01L2224/48145 , H01L2224/48249 , H01L2224/73265 , H01L2224/83801 , H01L2224/83851 , H01L2225/06568 , H01L2924/00014 , H01L2924/10253 , H01L2924/1033 , H01L2924/12036 , H01L2924/13055 , H01L2924/13064 , H01L2924/13091 , H01L2924/30107 , H03K17/161 , H03K17/162 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： Electronic modules, and methods of forming and operating modules, are described. The modules include a capacitor, a first switching device, and a second switching device. The electronic modules further include a substrate such as a DBC substrate, which includes an insulating layer between a first metal layer and a second metal layer, and may include multiple layers of DBC substrates stacked over one another. The first metal layer includes a first portion and a second portion isolated from one another by a trench formed through the first metal layer between the two portions. The first and second switching devices are over the first metal layer, a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench.
摘要翻译：描述了电子模块以及模块的形成和操作方法。模块包括电容器，第一开关器件和第二开关器件。电子模块还包括诸如DBC衬底的衬底，其包括在第一金属层和第二金属层之间的绝缘层，并且可以包括彼此堆叠的多层DBC衬底。第一金属层包括通过在两个部分之间穿过第一金属层形成的沟槽彼此隔离的第一部分和第二部分。第一和第二开关器件在第一金属层之上，电容器的第一端子电连接到第一金属层的第一部分，并且电容器的第二端子电连接到第一金属的第二部分层，电容器在沟槽上延伸。

17. 发明申请

US20150249447A1 GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES 有权
标题翻译：基于半导体器件的电路门驱动器
公开(公告)号：US20150249447A1
公开(公告)日：2015-09-03
申请号：US14708627
申请日：2015-05-11
申请人： Transphorm Inc.
发明人： Yifeng Wu , Liang Zhou , Zhan Wang
IPC分类号： H03K17/16
CPC分类号： H03K17/162 , H01L21/28264 , H01L29/2003 , H01L29/402 , H01L29/4236 , H01L29/66522 , H01L29/7786 , H03K17/163 , H03K2017/6875
摘要： An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate.
摘要翻译：电子部件包括开关装置，其包括源极，栅极和漏极，开关器件具有预定的器件切换速率。电子部件还包括电连接到栅极并耦合在开关器件的源极和栅极之间的栅极驱动器，栅极驱动器被配置为以栅极驱动器切换速率切换开关器件的栅极电压。栅极驱动器被配置为使得在操作中，栅极驱动器的输出电流不能超过第一电流电平，其中第一电流电平足够小以使开关装置在运行中的开关率小于预定的装置切换率。

18. 发明授权

US09087718B2 Enhancement-mode III-nitride devices 有权
标题翻译：增强型III族氮化物器件
公开(公告)号：US09087718B2
公开(公告)日：2015-07-21
申请号：US13799989
申请日：2013-03-13
申请人： Transphorm Inc.
发明人： Rakesh K. Lal
IPC分类号： H01L29/66 , H01L27/088 , H01L29/78 , H01L21/8252 , H01L27/06 , H01L27/085 , H01L29/423
CPC分类号： H01L29/7787 , H01L21/0217 , H01L21/0254 , H01L21/8252 , H01L23/291 , H01L23/3171 , H01L23/535 , H01L24/48 , H01L27/0605 , H01L27/0629 , H01L27/085 , H01L27/0883 , H01L29/2003 , H01L29/404 , H01L29/407 , H01L29/4175 , H01L29/4236 , H01L29/518 , H01L29/66462 , H01L29/66522 , H01L29/78 , H01L2224/48091 , H01L2224/4813 , H01L2924/00014 , H01L2924/10323 , H01L2924/1033 , H01L2924/10344 , H01L2924/10346 , H01L2924/13055 , H01L2924/13064 , H01L2924/00 , H01L2224/45099
摘要： A III-N enhancement-mode transistor includes a III-N structure including a conductive channel, source and drain contacts, and a gate electrode between the source and drain contacts. An insulator layer is over the III-N structure, with a recess formed through the insulator layer in a gate region of the transistor, with the gate electrode at least partially in the recess. The transistor further includes a field plate having a portion between the gate electrode and the drain contact, the field plate being electrically connected to the source contact. The gate electrode includes an extending portion that is outside the recess and extends towards the drain contact. The separation between the conductive channel and the extending portion of the gate electrode is greater than the separation between the conductive channel and the portion of the field plate that is between the gate electrode and the drain contact.
摘要翻译： III-N增强型晶体管包括III-N结构，其包括导电沟道，源极和漏极接触以及源极和漏极接触之间的栅电极。绝缘体层在III-N结构之上，在晶体管的栅极区中通过绝缘体层形成凹槽，栅电极至少部分地在凹槽中。晶体管还包括具有在栅电极和漏极接触之间的部分的场板，场板电连接到源触点。栅极电极包括在凹部外部并朝向漏极接触部延伸的延伸部分。导电沟道和栅电极的延伸部分之间的间隔大于导电通道与栅电极和漏极接触之间的场板部分之间的间隔。

19. 发明授权

US09041435B2 Method of forming electronic components with reactive filters 有权
标题翻译：用反应式过滤器形成电子部件的方法
公开(公告)号：US09041435B2
公开(公告)日：2015-05-26
申请号：US14307234
申请日：2014-06-17
申请人： Transphorm, Inc.
发明人： James Honea , Yifeng Wu
IPC分类号： H03K3/00 , H03K17/687 , H02M1/12 , H03K17/16 , H03K17/567 , H02P7/29 , H02M7/5395
CPC分类号： H03K17/687 , H02M1/126 , H02M7/5395 , H02P7/29 , H03K17/162 , H03K17/567 , H03K17/6871 , Y10T29/49105
摘要： An electronic component comprising a half bridge adapted for operation with an electrical load having an operating frequency is described. The half bridge comprises a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node. The electronic component further includes a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load. The first terminal of the filter is electrically coupled to the node, and the 3 dB roll-off frequency of the filter is greater than 5 kHz.
摘要翻译：描述了包括适于与具有工作频率的电负载一起工作的半桥的电子部件。半桥包括第一开关和第二开关，每个具有开关频率，第一开关和第二开关各自包括第一端子，第二端子和控制端子，其中第一开关的第一端子和第二开关第二开关的端子都电连接到节点。电子部件还包括具有3dB滚降频率的滤波器，3dB滚降频率小于开关的开关频率，但大于电负载的工作频率。滤波器的第一个端子电耦合到节点，滤波器的3 dB滚降频率大于5 kHz。

20. 发明授权

US09041065B2 Semiconductor heterostructure diodes 有权
标题翻译：半导体异质结二极管
公开(公告)号：US09041065B2
公开(公告)日：2015-05-26
申请号：US13973890
申请日：2013-08-22
申请人： Transphorm Inc.
发明人： Yifeng Wu , Umesh Mishra , Primit Parikh , Rongming Chu , Ilan Ben-Yaacov , Likun Shen
IPC分类号： H01L29/739 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/872 , H01L27/06 , H01L29/778 , H01L29/423
CPC分类号： H01L29/0615 , H01L27/0629 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/872
摘要： Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
摘要翻译：平面肖特基二极管，其半导体材料包括在至少一个半导体层中诱导2DEG的异质结。金属阳极触点位于上半导体层的顶部，与该层形成肖特基接触。金属阴极接触件连接到2DEG，与包含2DEG的层形成欧姆接触。

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