专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20080029777A1 SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20080029777A1
公开(公告)日：2008-02-07
申请号：US11776623
申请日：2007-07-12
申请人： Toshihiko Shiga
发明人： Toshihiko Shiga
IPC分类号： H01L33/00 , H01L21/02 , H01S5/20
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3213 , H01S5/34333
摘要： A LD (Laser Diode) includes: a laminated semiconductor structure including an active layer, a p-cladding layer, a contact layer, etc. that are sequentially on top of one another on an n-GaN substrate; a waveguide ridge including the contact layer and a portion of the p-cladding layer; a first silicon insulating film covering sidewalls of the waveguide ridge and having an opening that exposes a top of the waveguide ridge; an adhesive layer disposed on the first silicon insulating film, but not in the opening, and on the top of the waveguide ridge, wherein the adhesive layer includes a first adhesive film of Ti; and a p-side electrode over the adhesive layer such that the p-side electrode is in contact with the contact layer at the top of the waveguide ridge, through the opening.
摘要翻译： LD（激光二极管）包括：在n-GaN衬底上依次彼此叠置的有源层，p包层，接触层等的层叠半导体结构; 包括所述接触层和所述p包层的一部分的波导脊; 第一硅绝缘膜，其覆盖所述波导脊的侧壁并且具有暴露所述波导脊的顶部的开口; 设置在所述第一硅绝缘膜上但不在所述开口内且在所述波导脊的顶部上的粘合层，其中所述粘合层包括Ti的第一粘合膜; 以及在粘合剂层上的p侧电极，使得p侧电极通过开口与波导脊顶部的接触层接触。

12. 发明申请

US20080023799A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20080023799A1
公开(公告)日：2008-01-31
申请号：US11772644
申请日：2007-07-02
申请人： Kyozo KANAMOTO , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
发明人： Kyozo KANAMOTO , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： H01S5/22 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341 , H01S2301/173 , H01S2304/00
摘要： A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.
摘要翻译：氮化物半导体器件包括其上形成有半导体器件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n型电极。在GaN衬底和n型电极之间插入表面改性层和反应层。表面改性层用作载体供给层，并且通过使GaN衬底的后表面与待改性的含Si等离子体反应而形成。反应层是通过清洗部分除去沉积在表面改性层上的沉积材料产生沉积层，然后使包含在第一金属层中的Ti和沉积层通过热处理部分地反应而产生的。

13. 发明申请

US20070053398A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20070053398A1
公开(公告)日：2007-03-08
申请号：US11439276
申请日：2006-05-24
申请人： Hiromasu Matsuoka , Yasuyuki Nakagawa , Toshihiko Shiga
发明人： Hiromasu Matsuoka , Yasuyuki Nakagawa , Toshihiko Shiga
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A semiconductor laser device includes a semiconductor laser body including a resonator and having a front end face and a rear end face facing each other, the resonator being located between the front end face and the rear end face. The front end face emits principal laser light. A reflectance control film is disposed on the front end face or the rear end face of the semiconductor laser body and is made up of either an aluminum oxide film or a five-layer film including the aluminum oxide film disposed such that it is the layer in the five-layer film farthest from the front end face or the rear end face. A silicon oxide film is disposed on the aluminum oxide film of the reflectance control film and has a thickness of 20 nm or less.
摘要翻译：半导体激光装置包括：包括谐振器的半导体激光器体，其前端面和后端面彼此面对，所述谐振器位于前端面和后端面之间。前端面发射主激光。反射控制膜设置在半导体激光体的前端面或后端面上，由氧化铝膜或包含氧化铝膜的五层膜构成，使其成为五层薄膜离前端面或后端面最远。氧化硅膜设置在反射控制膜的氧化铝膜上，厚度为20nm以下。

14. 发明申请

US20060145201A1 Semiconductor device and field-effect transistor 有权
标题翻译：半导体器件和场效应晶体管
公开(公告)号：US20060145201A1
公开(公告)日：2006-07-06
申请号：US11290603
申请日：2005-12-01
申请人： Toshihiko Shiga
发明人： Toshihiko Shiga
IPC分类号： H01L31/112
CPC分类号： H01L21/28581 , H01L29/2003 , H01L29/812
摘要： A Schottky electrode including a WNx layer on an n-type GaN layer. A crystal plane of the n-type GaN layer is in contact with a crystal plane of the WNx layer. The crystal plane of the n-type GaN layer is a (0001)-plane, and the crystal plane of the WNx layer is (111)-oriented. The WNx layer may be an electrode layer having an NaCl-type structure including at least one metal selected from the group consisting of zirconium, hafnium, niobium, tantalum, molybdenum and tungsten, and at least one element selected from nitrogen and carbon. Further, the lattice constant of the electrode layer is preferably 0.95 to 1.05 times the a-axis lattice constant of the n-type GaN layer, multiplied by 2(1/2).
摘要翻译：包括n型GaN层上的WNx层的肖特基电极。 n型GaN层的晶面与WNx层的晶面接触。 n型GaN层的晶面为（0001）面，WNx层的晶面为（111）取向。 WNx层可以是具有包含选自锆，铪，铌，钽，钼和钨中的至少一种金属的NaCl型结构的电极层和选自氮和碳的至少一种元素。此外，电极层的晶格常数优选为n型GaN层的a轴晶格常数的0.95〜1.05倍乘以2（1/2）。

15. 发明授权

US6013926A Semiconductor device with refractory metal element 失效
$Semiconductor device with refractory metal element$
标题翻译：具有难熔金属元件的半导体器件
公开(公告)号：US6013926A
公开(公告)日：2000-01-11
申请号：US837458
申请日：1997-04-18
申请人： Tomoki Oku , Naohito Yoshida , Shinichi Miyakuni , Toshihiko Shiga
发明人： Tomoki Oku , Naohito Yoshida , Shinichi Miyakuni , Toshihiko Shiga
IPC分类号： H01L29/41 , H01L21/285 , H01L21/3205 , H01L21/335 , H01L21/338 , H01L29/778 , H01L29/812 , H03H3/02 , H01L29/80 , H01L31/0328 , H01L31/112
CPC分类号： H01L29/66446 , H01L21/28581 , H01L21/28587 , H01L29/66462 , H01L29/66878 , H01L29/7783 , H01L29/8128 , H03H3/02
摘要： A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of the recess and, accordingly, the pattern width of the constituent is easily controlled by the plane pattern of the recess.
摘要翻译：半导体器件包括在半导体衬底的凹部中的自对准难熔金属成分，并具有与凹部的底面相同的平面图案。构成物的宽度由凹部的平面图形决定，因此容易通过凹部的平面图案来控制构件的图案宽度。

16. 发明授权

US07851831B2 Transistor 有权
标题翻译：晶体管
公开(公告)号：US07851831B2
公开(公告)日：2010-12-14
申请号：US11859846
申请日：2007-09-24
申请人： Hidetoshi Koyama , Yoshitaka Kamo , Toshihiko Shiga
发明人： Hidetoshi Koyama , Yoshitaka Kamo , Toshihiko Shiga
IPC分类号： H01L29/66 , H01L29/00
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/812
摘要： A transistor includes a nitride semiconductor layer and a gate electrode layer. The gate electrode layer includes a tantalum nitride layer on the nitride semiconductor layer. The tantalum nitride layer forms a Schottky junction with the nitride semiconductor layer. The transistor also includes an insulating film on the nitride semiconductor layer. The insulating film surrounds the gate electrode layer. A first portion of the gate electrode layer, in contact with the nitride semiconductor layer, has a higher nitrogen mole fraction than a second portion of the gate electrode layer.
摘要翻译：晶体管包括氮化物半导体层和栅电极层。栅电极层包括在氮化物半导体层上的氮化钽层。氮化钽层与氮化物半导体层形成肖特基结。晶体管还包括在氮化物半导体层上的绝缘膜。绝缘膜围绕栅电极层。与氮化物半导体层接触的栅电极层的第一部分具有比栅电极层的第二部分高的氮摩尔分数。

17. 发明授权

US07616673B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07616673B2
公开(公告)日：2009-11-10
申请号：US11439276
申请日：2006-05-24
申请人： Hiromasu Matsuoka , Yasuyuki Nakagawa , Toshihiko Shiga
发明人： Hiromasu Matsuoka , Yasuyuki Nakagawa , Toshihiko Shiga
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A semiconductor laser device includes a semiconductor laser body including a resonator and having a front end face and a rear end face facing each other, the resonator being located between the front end face and the rear end face. The front end face emits principal laser light. A reflectance control film is disposed on the front end face or the rear end face of the semiconductor laser body and is made up of either an aluminum oxide film or a five-layer film including the aluminum oxide film disposed such that it is the layer in the five-layer film farthest from the front end face or the rear end face. A silicon oxide film is disposed on the aluminum oxide film of the reflectance control film and has a thickness of 20 nm or less.
摘要翻译：半导体激光装置包括：包括谐振器的半导体激光器体，其前端面和后端面彼此面对，所述谐振器位于前端面和后端面之间。前端面发射主激光。反射控制膜设置在半导体激光体的前端面或后端面上，由氧化铝膜或包含氧化铝膜的五层膜构成，使其成为五层薄膜离前端面或后端面最远。氧化硅膜设置在反射控制膜的氧化铝膜上，厚度为20nm以下。

18. 发明申请

US20080246060A1 TRANSISTOR 有权
标题翻译：晶体管
公开(公告)号：US20080246060A1
公开(公告)日：2008-10-09
申请号：US11859846
申请日：2007-09-24
申请人： Hidetoshi Koyama , Yoshitaka Kamo , Toshihiko Shiga
发明人： Hidetoshi Koyama , Yoshitaka Kamo , Toshihiko Shiga
IPC分类号： H01L29/812
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/812
摘要： A transistor includes a nitride semiconductor layer and a gate electrode layer. The gate electrode layer includes a tantalum nitride layer being formed on the nitride semiconductor layer. The tantalum nitride layer forms a Schottky junction with the nitride semiconductor layer. The transistor also includes an insulating film formed on the nitride semiconductor layer. The insulating film surrounds the gate electrode layer. The portion of the gate electrode layer in contact with the nitride semiconductor layer has a higher nitrogen mole fraction than the other portion of the gate electrode layer.
摘要翻译：晶体管包括氮化物半导体层和栅电极层。栅电极层包括在氮化物半导体层上形成的氮化钽层。氮化钽层与氮化物半导体层形成肖特基结。晶体管还包括形成在氮化物半导体层上的绝缘膜。绝缘膜围绕栅电极层。与氮化物半导体层接触的栅电极层的部分具有比栅电极层的其他部分高的氮摩尔分数。

19. 发明申请

US20070035024A1 Semiconductor device having an improved wiring or electrode structure 有权
标题翻译：具有改进的布线或电极结构的半导体器件
公开(公告)号：US20070035024A1
公开(公告)日：2007-02-15
申请号：US11410194
申请日：2006-04-25
申请人： Toshihiko Shiga , Hitoshi Nakamura , Junji Tanimura
发明人： Toshihiko Shiga , Hitoshi Nakamura , Junji Tanimura
IPC分类号： H01L23/48
CPC分类号： H01L21/28575 , H01L29/452 , Y10S257/928
摘要： An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layer, and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.
摘要翻译：通过在p型GaAs层上堆叠下Ti层，扩散防止层，上Ti层和金属（Au）层来形成欧姆电极。扩散防止层包括钽（Ta）或铌（Nb）。因此，可以防止金属层中的p型GaAs层和Au中的Ga和As的相互扩散，并且可以抑制在高温，高湿度环境中的欧姆电极的电阻率的变化。

20. 发明授权

US5631479A Semiconductor device with laminated refractory metal schottky barrier gate electrode 失效
$Semiconductor device with laminated refractory metal schottky barrier gate electrode$
标题翻译：具有层压难熔金属肖特基势垒栅电极的半导体器件
公开(公告)号：US5631479A
公开(公告)日：1997-05-20
申请号：US567991
申请日：1995-12-04
申请人： Toshihiko Shiga
发明人： Toshihiko Shiga
IPC分类号： H01L21/28 , H01L21/338 , H01L29/47 , H01L29/812 , H01L29/872 , H01L31/112 , H01L29/80
CPC分类号： H01L31/1121 , H01L29/475
摘要： A semiconductor device includes a semiconductor substrate having a surface; an active layer of a compound semiconductor disposed at the surface of the semiconductor substrate; and a Schottky barrier gate electrode including a multi-layer film alternately laminating a conductive refractory metal compound layer including a first refractory metal (M.sub.1) and a second refractory metal (M.sub.2) layer to three or more layers respectively, disposed on the active layer, thereby forming a Schottky junction with the active layer. The gate resistance of the Schottky barrier gate electrode can be held low and the internal stress can be reduced, whereby peeling off of the can be suppressed.
摘要翻译：半导体器件包括具有表面的半导体衬底; 设置在半导体衬底的表面的化合物半导体的有源层; 以及肖特基势垒栅电极，其包括分别设置在有源层上的三层以上交替层叠包含第一耐火金属（M1）和第二难熔金属（M2）层的导电性难熔金属化合物层的多层膜，从而与活性层形成肖特基结。可以将肖特基势垒栅极的栅极电阻保持为低，并且可以降低内部应力，从而可以抑制剥离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式