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    • 11. 发明授权
    • Method for start-up of a measuring device
    • 测量装置起动方法
    • US08978438B2
    • 2015-03-17
    • US13324066
    • 2011-12-13
    • Thilo TrappTorsten Pechstein
    • Thilo TrappTorsten Pechstein
    • G01N33/48G01N35/00G01N27/416
    • G01N35/00693G01N27/4165G01N35/00712
    • A method for start-up of a measuring device, which is embodied to monitor by means of at least one measuring transducer in contact with the interior of a process container, especially of a single-use container, a measured variable of a medium contained in the process container, wherein, for ascertaining a measured value, at least one measurement signal of the measuring transducer is mapped to a measured value of the measured variable according to a predetermined characteristic curve, wherein the method includes: introducing a process medium into the process container; bringing the measuring transducer in contact with the process medium; and performing a one-point calibrating of the measuring device based on a measurement signal registered by the measuring transducer in the process medium or a measured value derived therefrom based on the characteristic curve.
    • 一种用于启动测量装置的方法,其被实施为通过与处理容器,特别是一次性容器的内部接触的至少一个测量传感器来监测包含在其中的介质的测量变量 所述处理容器,其中,为了确定测量值,所述测量传感器的至少一个测量信号根据预定特性曲线被映射到所述测量变量的测量值,其中所述方法包括:将处理介质引入所述过程 容器; 使测量传感器与处理介质接触; 并且基于由所述测量换能器在所述处理介质中登记的测量信号或基于所述特性曲线从其导出的测量值,对所述测量装置进行一点校准。
    • 12. 发明授权
    • Ion-sensitive sensor with multilayer construction in the sensitive region
    • 离子敏感传感器在敏感区域具有多层结构
    • US08461587B2
    • 2013-06-11
    • US13260739
    • 2010-03-15
    • Eberhard KurthChristian KunathTorsten Pechstein
    • Eberhard KurthChristian KunathTorsten Pechstein
    • H01L29/66H01L21/02
    • G01N27/227
    • An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxide 103 is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.
    • 具有EIS结构的离子敏感传感器包括:半导体衬底,其上制备衬底氧化物103的层; 在衬底氧化物上制备的适配或匹配层; 化学稳定的中间绝缘体,其沉积在适配层或匹配层上; 以及传感器层,其包括氧化钽或氮氧化钽,并且被施加在中间绝缘体上; 其中所述中间绝缘体包括氧化铪或氧化锆或氧化锆和氧化铪的混合物,并且其中所述适配或匹配层的化学组成和/或其结构与所述中间绝缘体和所述衬底氧化物不同。
    • 13. 发明申请
    • Probe Arrangement
    • 探测器安排
    • US20110290045A1
    • 2011-12-01
    • US13109065
    • 2011-05-17
    • Michael HANKORené KÜNDSCHERTorsten PECHSTEIN
    • Michael HANKORené KÜNDSCHERTorsten PECHSTEIN
    • G01D21/00
    • G01D11/245G01N27/333
    • A probe arrangement, in the case of which a probe is arranged within a tubular housing, wherein the tubular housing has at least one process window open to the process medium, and at least one functional element is secured on the probe and surrounded by the process medium. In order to suppress a taking along of the process medium during transfer of the functional element from the measured medium into a rinsing chamber, the tubular housing includes at least one treatment window open opposite the probe (3), preferably for washing, rinsing and/or calibrating the functional element, wherein the functional element is movable between the process window and the treatment window, and, during the measuring in the process medium, the at least one functional element is arranged approximately coincident with the at least one process window of the housing.
    • 探针布置,在探针布置在管状壳体内的情况下,其中管状壳体具有至少一个对加工介质开放的处理窗口,并且至少一个功能元件固定在探针上并被该工艺包围 中。 为了在将功能元件从测量介质转移到漂洗室中时抑制沿着处理介质的吸收,管状壳体包括与探针(3)相对开放的至少一个处理窗口,优选用于洗涤,漂洗和/ 或校准所述功能元件,其中所述功能元件可在所述处理窗口和所述处理窗口之间移动,并且在所述处理介质中的所述测量期间,所述至少一个功能元件被布置为与所述至少一个工艺窗口 住房。
    • 14. 发明申请
    • CABLE CIRCUIT WITH DIGITAL SIGNAL CONDITIONING
    • 带数字信号调节的电缆电路
    • US20100216343A1
    • 2010-08-26
    • US12734113
    • 2008-10-08
    • Stephan BuschnakowskiTorsten PechsteinStefan RoblSven-Matthias ScheibeTobias Mieth
    • Stephan BuschnakowskiTorsten PechsteinStefan RoblSven-Matthias ScheibeTobias Mieth
    • H01R13/66H01F38/00
    • G01D7/00G01D21/00G08C17/06G08C19/36H01F27/40H01F38/14H01F2038/143
    • A cable circuit for connecting a sensor module to a measurement transmitter. The cable circuit includes a contactless interface for signal transmission between the cable circuit and the sensor module, wherein the sensor module is galvanically isolated from the cable circuit, and wherein signal transmission between the cable circuit and the sensor module occurs on an optical, inductive or capacitive path. Additionally, the cable circuit includes a signal processing unit, as well as a cable interface for connecting a cable, which connects the cable circuit with the measurement transmitter. The signal processing unit is integrated into the signal path. The signal processing unit is embodied to receive, via the cable interface, signals from the measurement transmitter, to condition them and to transmit them via the contactless interface to the sensor module, and to receive, via the contactless interface, signals from the sensor module, to condition them and to transmit them via the cable interface to the measurement transmitter.
    • 用于将传感器模块连接到测量变送器的电缆电路。 电缆电路包括用于在电缆电路和传感器模块之间进行信号传输的非接触式接口,其中传感器模块与电缆电路电隔离,并且其中电缆电路和传感器模块之间的信号传输发生在光学,电感或 电容路径。 此外,电缆电路包括信号处理单元,以及用于连接将电缆电路与测量发射器连接的电缆的电缆接口。 信号处理单元集成到信号路径中。 信号处理单元被实现为经由电缆接口从测量发射器接收信号以调节它们并经由非接触式接口传送到传感器模块,并且经由非接触式接口接收来自传感器模块的信号 ,以调节它们并通过电缆接口将其传输到测量发射器。
    • 16. 发明申请
    • Poteniometric sensor with status monitoring
    • 具有状态监测的电位传感器
    • US20070163881A1
    • 2007-07-19
    • US11643834
    • 2006-12-22
    • Torsten PechsteinLars Kirsten
    • Torsten PechsteinLars Kirsten
    • G01N27/26
    • G01N27/4148
    • A potentiometric sensor for measuring a potentiometric variable of a medium comprises an ISFET whose gate region exhibits an ion-sensitive surface which can be exposed to the medium and which outputs an output signal that depends on the concentration of the ions at the ion-sensitive surface of the gate region. An evaluation circuit with a measuring input to which the output signal of the ISFET is applied is included, whereby the evaluation circuit is designed to output a measured value for the potentiometric variable, depending on the output signal. Also included is a measuring resistor which is arranged between the output of the ISFET and the input of the evaluation circuit, a monitoring circuit to determine the voltage drop over the measuring resistor, and a bridge section that is parallel to the measuring resistor to bridge the measuring resistor whereby the bridge section exhibits a switch with which the bridge section can be opened or closed.
    • 用于测量介质的电位变量的电位传感器包括其栅极区域表现出可暴露于介质的离子敏感表面的ISFET,并且其输出取决于离子敏感表面处的离子浓度的输出信号 的门区域。 包括具有施加ISFET的输出信号的测量输入的评估电路,由此评估电路被设计为根据输出信号输出电位变量的测量值。 还包括一个测量电阻器,它被布置在ISFET的输出端和评估电路的输入端之间,一个监测电路,用于确定测量电阻器上的电压降;以及一个与测量电阻器并联的桥接器, 测量电阻器,由此桥接部分表现出可以打开或关闭桥接部分的开关。
    • 18. 发明授权
    • Probe arrangement
    • 探测安排
    • US09146138B2
    • 2015-09-29
    • US13109065
    • 2011-05-17
    • Michael HankoRené KündscherTorsten Pechstein
    • Michael HankoRené KündscherTorsten Pechstein
    • G01D11/24G01N27/333
    • G01D11/245G01N27/333
    • A probe arrangement, in the case of which a probe is arranged within a tubular housing, wherein the tubular housing has at least one process window open to the process medium, and at least one functional element is secured on the probe and surrounded by the process medium. In order to suppress a taking along of the process medium during transfer of the functional element from the measured medium into a rinsing chamber, the tubular housing includes at least one treatment window open opposite the probe (3), preferably for washing, rinsing and/or calibrating the functional element, wherein the functional element is movable between the process window and the treatment window, and, during the measuring in the process medium, the at least one functional element is arranged approximately coincident with the at least one process window of the housing.
    • 探针布置,在探针布置在管状壳体内的情况下,其中管状壳体具有至少一个对加工介质开放的处理窗口,并且至少一个功能元件固定在探针上并被该工艺包围 中。 为了在将功能元件从测量介质转移到漂洗室中时抑制沿着处理介质的吸收,管状壳体包括与探针(3)相对开放的至少一个处理窗口,优选用于洗涤,漂洗和/ 或校准所述功能元件,其中所述功能元件可在所述处理窗口和所述处理窗口之间移动,并且在所述处理介质中的所述测量期间,所述至少一个功能元件被布置为与所述至少一个工艺窗口 住房。
    • 20. 发明授权
    • Method for operating an ISFET sensor
    • 操作ISFET传感器的方法
    • US08668822B2
    • 2014-03-11
    • US12971050
    • 2010-12-17
    • Torsten Pechstein
    • Torsten Pechstein
    • G01N27/414G01N27/333
    • G01N27/227
    • A method for operating an ion-sensitive sensor with a measurement circuit which includes an ion-sensitive electrolyte-insulator-semiconductor structure (EIS); wherein the measurement circuit is embodied to issue an output signal which is dependent on ion concentration, especially a pH value, of a measured liquid; and wherein the method comprises the steps of: introducing the ion-sensitive electrolyte-insulator-semiconductor structure into a measured liquid; accelerating charging processes in the region of an insulator layer of the ion-sensitive electrolyte-insulator-semiconductor structure by operating the sensor over a predetermined time span at least a first working point; and dynamically adapting the working point to set a second working point, and registering and processing the output signal of the measurement circuit at the second working point.
    • 一种使用包括离子敏感电解质 - 绝缘体 - 半导体结构(EIS)的测量电路操作离子敏感传感器的方法; 其中所述测量电路被实施为发出取决于测量液体的离子浓度,特别是pH值的输出信号; 并且其中所述方法包括以下步骤:将所述离子敏感的电解质 - 绝缘体半导体结构引入测量的液体中; 通过在至少第一工作点的预定时间间隔内操作所述传感器来加速所述离子敏感电解质 - 绝缘体 - 半导体结构的绝缘体区域的充电过程; 动态调整工作点以设定第二工作点,并在第二工作点登记和处理测量电路的输出信号。