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11. 发明申请

US20110148758A1 COORDINATE INPUT APPARATUS, CONTROL METHOD, AND STORAGE MEDIUM 有权
标题翻译：协调输入装置，控制方法和存储介质
公开(公告)号：US20110148758A1
公开(公告)日：2011-06-23
申请号：US12955590
申请日：2010-11-29
申请人： Takayuki Hashimoto
发明人： Takayuki Hashimoto
IPC分类号： G06F3/033
CPC分类号： G06F3/03542 , G06F3/0386 , G06F3/0421
摘要： A coordinate input apparatus for making an input by bringing a pointing device into contact with an input area of an apparatus main body is provided, wherein the pointing device comprises: a timer configured to generate a transmission cycle by timekeeping; a detection unit configured to detect the presence/absence of an input instruction according to the presence/absence of contact of the pointing device with the input area; wherein when the detection unit detects the presence of the input instruction, and then detects the absence of the input instruction, the timer continues timekeeping of the transmission cycle during a predetermined holding period.
摘要翻译：提供了一种通过使指示装置与装置主体的输入区域接触而进行输入的坐标输入装置，其中，所述指示装置包括：定时器，被配置为通过计时生成发送周期; 检测单元，被配置为根据指示设备与输入区域的接触的存在/不存在来检测输入指令的存在/不存在; 其中，当所述检测单元检测到所述输入指令的存在，然后检测到所述输入指令不存在时，所述定时器在预定保持期间内继续所述传输周期的计时。

12. 发明申请

US20110111320A1 STACK STRUCTURE FOR LAMINATED SOLID OXIDE FUEL CELL, LAMINATED SOLID OXIDE FUEL CELL AND MANUFACTURING METHOD 有权
标题翻译：层压固体氧化物燃料电池堆叠结构，层压固体氧化物燃料电池和制造方法
公开(公告)号：US20110111320A1
公开(公告)日：2011-05-12
申请号：US12934471
申请日：2009-03-26
申请人： Seiichi Suda , Kaori Jono , Fumio Hashimoto , Takayuki Hashimoto
发明人： Seiichi Suda , Kaori Jono , Fumio Hashimoto , Takayuki Hashimoto
IPC分类号： H01M8/24 , H01M8/00 , H01M8/02
CPC分类号： H01M8/2432 , H01M8/0263 , H01M8/0276 , H01M8/0282 , H01M8/0286 , H01M8/2404 , H01M8/2425 , H01M8/2485 , H01M2008/1293 , Y02P70/56
摘要： A stack structure for a solid oxide fuel cell includes a plurality of stacked single cells, each having a fuel electrode layer including a fuel electrode and an air electrode layer including an air electrode, the fuel electrode layer and the air electrode layer being arranged opposite each other on either side of a solid electrolyte, separators arranged between the stacked single cells to separate the single cells, and non-porous seal parts located within the fuel electrode layer and the air electrode layer, are equivalent to either the separators or the solid electrolyte at least in terms of thermal expansion and contraction characteristics, and are integrated with an edge of the fuel electrode or an edge of the air electrode, and also with the adjacent separator and the adjacent solid electrolyte.
摘要翻译：固体氧化物型燃料电池用叠层结构体包括多个堆叠单体电池，具有包括燃料电极的燃料电极层和包括空气极的空气极层，多个燃料电极层和空气极层相对配置另一方面，在固体电解质的两侧，布置在堆叠的单个电池之间以分离单个电池的隔板和位于燃料电极层和空气电极层内的无孔密封部件等同于隔板或固体电解质至少在热膨胀和收缩特性方面，并且与燃料电极的边缘或空气电极的边缘以及与相邻的隔板和相邻的固体电解质结合。

13. 发明申请

US20100327348A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND POWER-SUPPLY DEVICE USING THE SAME 失效
标题翻译：半导体器件及其制造方法和使用该电极的电源装置
公开(公告)号：US20100327348A1
公开(公告)日：2010-12-30
申请号：US12818485
申请日：2010-06-18
申请人： Takayuki HASHIMOTO , Takashi HIRAO , Noboru AKIYAMA
发明人： Takayuki HASHIMOTO , Takashi HIRAO , Noboru AKIYAMA
IPC分类号： H01L27/06 , H01L21/8234 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/41775 , H01L29/4933 , H01L29/66727 , H01L29/7803 , H02M3/1588 , Y02B70/1466
摘要： In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n− type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n− type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n− type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.
摘要翻译：在横向型功率MOSFET中，通过抑制增加电池间距而实现高的击穿电压，并且降低反馈容量和导通电阻。相对于n +型硅衬底的主表面垂直地设置具有高电阻的n型硅区域作为保持击穿电压的区域，并且具有高电阻的n型硅区域连接到 n +型硅衬底。此外，导电物质通过绝缘物质填充在形成为从n +型硅衬底的主表面到达n +型硅衬底的沟槽内，以便与具有高电阻的n型硅区接触，并且导电物质电连接到源电极。

14. 发明申请

US20100321969A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME 有权
标题翻译：半导体器件和使用该器件的电源器件
公开(公告)号：US20100321969A1
公开(公告)日：2010-12-23
申请号：US12851849
申请日：2010-08-06
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： H02M1/00
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译：提供能够减小电感的半导体器件。在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。主电路的电流从封装的后表面流向其前表面。金属板通过封装中的布线连接到输出端子。引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。因此，电感变小，电源损耗和尖峰电压也降低。

15. 发明申请

US20100176430A1 Semiconductor Device with Reduced Parasitic Inductance 有权
标题翻译：具有降低寄生电感的半导体器件
公开(公告)号：US20100176430A1
公开(公告)日：2010-07-15
申请号：US12721201
申请日：2010-03-10
申请人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
IPC分类号： H01L27/06
CPC分类号： H01L25/16 , G06F1/26 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/40 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12032 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are
摘要翻译：本发明提供一种降低电源单元的主电路的寄生电感的技术。在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是由n沟道垂直MOSFET形成，用于高侧开关的功率MOSFET的源极和用于低边开关的功率MOSFET的漏电极

16. 发明申请

US20090154209A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME 有权
标题翻译：半导体器件和使用该器件的电源器件
公开(公告)号：US20090154209A1
公开(公告)日：2009-06-18
申请号：US12349106
申请日：2009-01-06
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： H02M1/00
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译：提供能够减小电感的半导体器件。在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。主电路的电流从封装的后表面流向其前表面。金属板通过封装中的布线连接到输出端子。引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。因此，电感变小，电源损耗和尖峰电压也降低。

17. 发明申请

US20080315851A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY USING THE SAME 有权
标题翻译：半导体器件和使用该器件的电源
公开(公告)号：US20080315851A1
公开(公告)日：2008-12-25
申请号：US12143305
申请日：2008-06-20
申请人： Noboru Akiyama , Takayuki Hashimoto , Takashi Hirao , Koji Tateno
发明人： Noboru Akiyama , Takayuki Hashimoto , Takashi Hirao , Koji Tateno
IPC分类号： G05F1/10
CPC分类号： H02M3/1588 , Y02B70/1466
摘要： A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.
摘要翻译：电源控制IC包括在开关电源中，该开关电源驱动以串联连接到直流电源的半导体开关装置，以向外部负载提供预定的恒定电压，并且是包括控制半导体开关器件的导通和截止的半导体电路。当流过负载的电流突然增加以在与开关周期同步产生的PWM导通脉冲结束之后导致误差电压超过预定的第一阈值电压时，在同一时间内产生第二PWM导通脉冲开关周期。此外，在产生第二PWM导通脉冲的开关周期之后的多个开关周期中，与误差电压进行比较的第一阈值电压被切换到高于第一阈值电压的第二阈值电压。

18. 发明申请

US20070200537A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20070200537A1
公开(公告)日：2007-08-30
申请号：US11624767
申请日：2007-01-19
申请人： Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
发明人： Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
IPC分类号： G05F1/10 , H02J3/12
CPC分类号： H01L25/16 , H01L24/37 , H01L24/40 , H01L2224/05554 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H02M3/1588 , H03K17/08142 , H03K17/162 , H03K17/6871 , H03K2217/0036 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
摘要翻译：一种能够减少大电流和高频损耗的电源。在用于电源的MCM中，高边功率MOSFET芯片，低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料（封装绝缘树脂）中，布线DL的布线长度将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的距离比连接驱动器IC芯片的输出端子的栅极端子的布线长度短高端功率MOSFET芯片或源极端子。此外，使布线数量DL大于布线数量DH。

19. 发明申请

US20070195563A1 DC/DC CONVERTER 有权
标题翻译： DC / DC转换器
公开(公告)号：US20070195563A1
公开(公告)日：2007-08-23
申请号：US11624837
申请日：2007-01-19
申请人： Masaki Shiraishi , Takayuki Hashimoto , Noboru Akiyama
发明人： Masaki Shiraishi , Takayuki Hashimoto , Noboru Akiyama
IPC分类号： H02M3/335
CPC分类号： H02M1/08 , H01L24/48 , H01L24/49 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01082 , H01L2924/12032 , H01L2924/12036 , H01L2924/13091 , H01L2924/14 , H01L2924/30107 , H03K17/0822 , H03K17/165 , H03K17/166 , H03K17/6871 , H01L2924/00 , H01L2224/45099
摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.
摘要翻译：在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位，低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。

20. 发明授权

US09349847B2 Semiconductor device and power converter 有权
标题翻译：半导体器件和电源转换器
公开(公告)号：US09349847B2
公开(公告)日：2016-05-24
申请号：US14364959
申请日：2011-12-15
申请人： Takayuki Hashimoto , Mutsuhiro Mori
发明人： Takayuki Hashimoto , Mutsuhiro Mori
IPC分类号： H01L29/66 , H01L21/332 , H01L29/739 , H01L29/861 , H01L29/08 , H01L29/10 , H01L27/07 , H01L29/88 , H02M7/537
CPC分类号： H01L29/7397 , H01L27/0727 , H01L29/0834 , H01L29/1095 , H01L29/7395 , H01L29/861 , H01L29/88 , H02M7/537
摘要： A semiconductor device of this invention (an IGBT with a built-in diode) includes: an n−-type drift layer 1; a p-type channel region 2 that is arranged in contact with the surface side of this n−-type drift layer 1; a gate electrode 5 that is provided in a trench T provided so as to penetrate this p-type channel region 2 and reach to the n−-type drift layer 1 through a gate insulating film 3; an n-type source region 4 that is provided so as to contact the trench T on the surface side of the p-type channel region 2; a high-concentration n-type region 6 that is arranged in contact with the back side of the n−-type drift layer 1; and a high-concentration p-type region 7 that is arranged in contact with the back side of this high-concentration n-type region 6; in which a junction of the high-concentration n-type region 6 and the high-concentration p-type region 7 is a tunnel junction. According to this semiconductor device, it is possible to form the IGBT and the diode on a single chip. Moreover, it is possible to avoid problems of “snap back” and “current concentration.”
摘要翻译：本发明的半导体器件（具有内置二极管的IGBT）包括：n型漂移层1; 与该n型漂移层1的表面侧接触的p型沟道区域2; 设置在沟槽T中以设置成穿过该p型沟道区域2并通过栅极绝缘膜3到达n型漂移层1的栅电极5; n型源极区域4，其设置成与p型沟道区域2的表面侧的沟槽T接触; 配置成与n型漂移层1的背面接触的高浓度n型区域6; 以及与该高浓度n型区域6的背面接触的高浓度p型区域7; 其中高浓度n型区域6和高浓度p型区域7的结是隧道结。根据该半导体器件，可以在单个芯片上形成IGBT和二极管。此外，可以避免“回弹”和“当前集中”的问题。

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