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11. 发明授权

US08592294B2 High temperature atomic layer deposition of dielectric oxides 有权
标题翻译：介电氧化物的高温原子层沉积
公开(公告)号：US08592294B2
公开(公告)日：2013-11-26
申请号：US12710185
申请日：2010-02-22
申请人： Suvi Haukka , Hannu Huotari , Marko Tuominen
发明人： Suvi Haukka , Hannu Huotari , Marko Tuominen
IPC分类号： H01L21/20
CPC分类号： C23C16/45525 , C23C16/402 , C23C16/403 , C23C16/405 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L28/40
摘要： Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
摘要翻译：本文提供了通过原子层沉积形成金属氧化物薄膜的方法。金属氧化物薄膜可以在高温下沉积，使得薄膜是沉积的结晶的。金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。

12. 发明申请

US20110293830A1 PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES 审中-公开
标题翻译：过渡金属氧化物原子层沉积的前兆和方法
公开(公告)号：US20110293830A1
公开(公告)日：2011-12-01
申请号：US13034564
申请日：2011-02-24
申请人： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
发明人： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC分类号： C23C16/455
CPC分类号： C23C16/405 , C01G23/07 , C01G25/02 , C01G27/02 , C01P2006/40 , C23C16/45527 , C23C16/45536 , C23C16/45553
摘要： Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
摘要翻译：本文提供了通过原子层沉积形成过渡金属氧化物薄膜，优选IVB族金属氧化物薄膜的方法。金属氧化物薄膜可以使用金属有机反应物在高温下沉积。在一些实施方案中使用包含两种配体的金属有机反应物，其中至少一种是环庚三烯或环庚三烯（CHT）配体。金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。

13. 发明授权

US07771534B2 Method of growing oxide thin films 有权
标题翻译：生长氧化物薄膜的方法
公开(公告)号：US07771534B2
公开(公告)日：2010-08-10
申请号：US11615827
申请日：2006-12-22
申请人： Eva Tois , Suvi Haukka , Marko Tuominen
发明人： Eva Tois , Suvi Haukka , Marko Tuominen
IPC分类号： C30B25/00
CPC分类号： H01L21/02156 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45531 , C30B25/02 , C30B29/16 , H01L21/02145 , H01L21/02148 , H01L21/0215 , H01L21/02153 , H01L21/02159 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporizable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporized, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.
摘要翻译：通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。在此过程中，将可汽化的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。本发明提供了一种用于生长控制含有SiO 2的薄膜的控制方法，反应时间足够短。

14. 发明授权

US07771533B2 Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide 有权
标题翻译：含有二氧化硅的薄膜的原子层 - 化学气相沉积
公开(公告)号：US07771533B2
公开(公告)日：2010-08-10
申请号：US10148525
申请日：2000-12-04
申请人： Eva Tois , Suvi Haukka , Marko Tuominen
发明人： Eva Tois , Suvi Haukka , Marko Tuominen
IPC分类号： C30B25/00
CPC分类号： H01L21/02156 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45531 , C30B25/02 , C30B29/16 , H01L21/02145 , H01L21/02148 , H01L21/0215 , H01L21/02153 , H01L21/02159 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2 with sufficiently short reaction times.
摘要翻译：通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。在该方法中，将可蒸发的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。本发明提供了一种控制方法，用于生长控制含有SiO 2的薄膜，反应时间足够短。

15. 发明申请

US20070254488A1 Methods for forming roughened surfaces and applications thereof 有权
标题翻译：形成粗糙表面的方法及其应用
公开(公告)号：US20070254488A1
公开(公告)日：2007-11-01
申请号：US11414510
申请日：2006-04-28
申请人： Hannu Huotari , Suvi Haukka
发明人： Hannu Huotari , Suvi Haukka
IPC分类号： H01L21/302
CPC分类号： H01L21/32051 , H01L27/10852 , H01L28/84 , Y10S977/742 , Y10S977/773
摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.
摘要翻译：提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。粗糙化的金属表面可以用于例如集成电路的制造。

16. 发明申请

US20070163488A1 METHOD OF GROWING OXIDE THIN FILMS 有权
标题翻译：生长氧化薄膜的方法
公开(公告)号：US20070163488A1
公开(公告)日：2007-07-19
申请号：US11615827
申请日：2006-12-22
申请人： Eva Tois , Suvi Haukka , Marko Tuominen
发明人： Eva Tois , Suvi Haukka , Marko Tuominen
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12
CPC分类号： H01L21/02156 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45531 , C30B25/02 , C30B29/16 , H01L21/02145 , H01L21/02148 , H01L21/0215 , H01L21/02153 , H01L21/02159 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.
摘要翻译：通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。在该方法中，将可蒸发的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。本发明提供一种用于生长控制含有SiO 2的薄膜的控制方法，其反应时间足够短。

17. 发明申请

US20070096321A1 Conformal lining layers for damascene metallization 有权
标题翻译：用于镶嵌金属化的保形衬层
公开(公告)号：US20070096321A1
公开(公告)日：2007-05-03
申请号：US11511877
申请日：2006-08-28
申请人： Ivo Raaijmakers , Suvi Haukka , Ville Saanila , Pekka Soininen , Kai-Erik Elers , Ernst Granneman
发明人： Ivo Raaijmakers , Suvi Haukka , Ville Saanila , Pekka Soininen , Kai-Erik Elers , Ernst Granneman
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/45534 , C23C16/45536 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/7681 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.
摘要翻译：提供了集成电路中双镶嵌结构的保形衬里的方法和结构。沟槽和接触通孔形成在绝缘层中。沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。自身端接的金属层因此与氮气反应。接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

18. 发明授权

US07045406B2 Method of forming an electrode with adjusted work function 有权
标题翻译：形成具有调节功函数的电极的方法
公开(公告)号：US07045406B2
公开(公告)日：2006-05-16
申请号：US10430703
申请日：2003-05-05
申请人： Hannu Huotari , Suvi Haukka , Marko Tuominen
发明人： Hannu Huotari , Suvi Haukka , Marko Tuominen
IPC分类号： H01L21/28
CPC分类号： H01L21/28194 , H01L21/28088 , H01L21/823828 , H01L21/823842 , H01L29/4966 , H01L29/517
摘要： A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate electrode material in the region that determines the work function of the gate electrode during the gate electrode deposition. The gate stack is deposited by an atomic layer deposition type process and the overall electronegativity of the gate electrode is tuned by introducing at least one pulse of an additional precursor to selected deposition cycles of the gate electrode. The tuning of the work function of the gate electrode can be done not only by introducing additional material into the gate electrode, but also by utilizing the effects of a graded mode deposition and thickness variations of the lower gate part of the gate electrode in combination with the effects that the incorporation of the additional material pulses offers.
摘要翻译：一种方法形成具有期望的栅电极功函数的半导体器件的栅堆叠。通过在栅电极沉积期间改变确定栅电极的功函数的区域中的栅极电极材料的总体电负性来调整功函数。通过原子层沉积型工艺沉积栅极堆叠，并通过向选择的栅电极的沉积循环引入附加前体的至少一个脉冲来调节栅电极的整体电负性。栅电极的功函数的调谐不仅可以通过向栅电极引入额外的材料，还可以通过利用栅电极的下栅极部分的分级模式淀积和厚度变化的结果与附加材料脉冲的结合提供的效果。

19. 发明授权

US06887795B2 Method of growing electrical conductors 有权
标题翻译：生长电导体的方法
公开(公告)号：US06887795B2
公开(公告)日：2005-05-03
申请号：US10300169
申请日：2002-11-19
申请人： Pekka J. Soininen , Kai-Erik Elers , Suvi Haukka
发明人： Pekka J. Soininen , Kai-Erik Elers , Suvi Haukka
IPC分类号： H01L21/285 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76843 , H01L21/02068 , H01L21/28562 , H01L21/3105 , H01L21/321 , H01L21/76807 , H01L21/76814 , H01L21/76823 , H01L21/76831 , H01L21/76834 , H01L21/76838 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76883 , H01L21/76886 , H01L2224/32245 , H01L2224/45147 , H01L2224/48247 , H01L2924/00011 , H01L2924/12044 , H01L2924/00 , H01L2924/01005
摘要： This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent. The metal oxide is preferably deposited according to the principles of atomic layer deposition (ALD) using a metal source chemical and an oxygen source chemical. The reduction step is preferably carried out in an ALD reactor using one or more vaporized organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO and —COOH.
摘要翻译：本发明涉及集成电路（IC）的制造，特别是适用于IC中的导电层。根据优选的方法，将金属氧化物薄膜沉积在基材表面上，然后用有机还原剂基本上还原成金属形式。金属氧化物优选根据原子层沉积（ALD）的原理使用金属源化学品和氧源化学品沉积。还原步骤优选在ALD反应器中使用一种或多种含有至少一种选自-OH，-CHO和-COOH的官能团的汽化有机化合物进行。

20. 发明授权

US06858524B2 Method of depositing barrier layer for metal gates 有权
标题翻译：金属栅极沉积阻挡层的方法
公开(公告)号：US06858524B2
公开(公告)日：2005-02-22
申请号：US10430811
申请日：2003-05-05
申请人： Suvi Haukka , Hannu Huotari
发明人： Suvi Haukka , Hannu Huotari
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L21/3205 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/28185 , H01L21/28088 , H01L21/28194 , H01L21/28202 , H01L21/28238 , H01L21/823828 , H01L21/823842 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode. Furthermore, the barrier film prevents the electrode material from reacting with the gate dielectric material. The barrier layer is ultra thin and, at the same time, it forms a uniform cover over the entire surface of the gate dielectric.
摘要翻译：制造高性能MOS器件和晶体管栅极堆叠的方法包括在半导体衬底上形成栅极电介质层; 通过ALD型工艺在所述栅极介质层上形成阻挡层; 以及在阻挡层上形成栅电极层。该方法能够在沉积器件的栅极电介质层之后的处理步骤中使用氢等离子体，高能氢自由基和离子，其它反应性基团，活性氧和含氧前体。用于形成阻挡层的ALD工艺基本上在不存在等离子体和反应性氢的径向和离子的情况下进行。本发明使得可以在金属栅极的沉积中使用氧作为前体。阻挡膜还允许在栅电极的沉积中使用直接或远程等离子体形式的氢等离子体。此外，阻挡膜防止电极材料与栅极电介质材料反应。阻挡层是超薄的，并且同时在栅电介质的整个表面上形成均匀的覆盖层。

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