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11. 发明授权

US07501666B2 Method for forming p-type semiconductor region, and semiconductor element 有权
标题翻译：形成p型半导体区域的方法和半导体元件
公开(公告)号：US07501666B2
公开(公告)日：2009-03-10
申请号：US11659610
申请日：2005-08-02
申请人： Keiichiro Tanabe , Susumu Yoshimoto
发明人： Keiichiro Tanabe , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L21/268 , H01L33/0095
摘要： A substrate 103 is set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system 101, and a GaN buffer film 105, an undoped GaN film 107, and a GaN film 109 containing a p-type dopant are successively grown on the substrate 103 to form an epitaxial substrate E1. The semiconductor film 109 also contains hydrogen, which was included in a source gas, in addition to the p-type dopant. Then the epitaxial substrate E1 is placed in a short pulsed laser beam emitter 111. A laser beam LB1 is applied to a part or the whole of a surface of the epitaxial substrate E1 to activate the p-type dopant by making use of a multiphoton absorption process. When the substrate is irradiated with the pulsed laser beam LB1 which can induce multiphoton absorption, a p-type GaN film 109a is formed. There is thus provided a method of optically activating the p-type dopant in the semiconductor film to form the p-type semiconductor region, without use of thermal annealing.
摘要翻译：将基板103设置在诸如金属有机气相外延系统101的成膜装置中，并且依次生长包含p型掺杂剂的GaN缓冲膜105，未掺杂的GaN膜107和GaN膜109 在衬底103上形成外延衬底E1。除了p型掺杂剂之外，半导体膜109还含有包含在源气体中的氢。然后将外延衬底E1放置在短脉冲激光束发射器111中。激光束LB1施加到外延衬底E1的表面的一部分或全部，以通过利用多光子吸收激活p型掺杂剂处理。当用可以诱导多光子吸收的脉冲激光束LB1照射基板时，形成p型GaN膜109a。因此，提供了在半导体膜中光学活化p型掺杂剂以形成p型半导体区域而不使用热退火的方法。

12. 发明申请

US20070296060A1 Method for Forming P-Type Semiconductor Region, and Semiconductor Element 有权
标题翻译：形成P型半导体区域的方法和半导体元件
公开(公告)号：US20070296060A1
公开(公告)日：2007-12-27
申请号：US11659610
申请日：2005-08-02
申请人： Keiichiro Tanabe , Susumu Yoshimoto
发明人： Keiichiro Tanabe , Susumu Yoshimoto
IPC分类号： H01L29/36 , H01L21/268 , H01L21/428
CPC分类号： H01L21/268 , H01L33/0095
摘要： A substrate 103 is set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system 101, and a GaN buffer film 105, an undoped GaN film 107, and a GaN film 109 containing a p-type dopant are successively grown on the substrate 103 to form an epitaxial substrate E1. The semiconductor film 109 also contains hydrogen, which was included in a source gas, in addition to the p-type dopant. Then the epitaxial substrate E1 is placed in a short pulsed laser beam emitter 111. A laser beam LB1 is applied to a part or the whole of a surface of the epitaxial substrate E1 to activate the p-type dopant by making use of a multiphoton absorption process. When the substrate is irradiated with the pulsed laser beam LB1 which can induce multiphoton absorption, a p-type GaN film 109a is formed. There is thus provided a method of optically activating the p-type dopant in the semiconductor film to form the p-type semiconductor region, without use of thermal annealing.
摘要翻译：将基板103设置在诸如金属有机气相外延系统101的成膜装置中，并且依次生长包含p型掺杂剂的GaN缓冲膜105，未掺杂的GaN膜107和GaN膜109 在衬底103上形成外延衬底E 1。除了p型掺杂剂之外，半导体膜109还含有包含在源气体中的氢。然后将外延衬底E 1放置在短脉冲激光束发射器111中。激光束L B1被施加到外延衬底E 1的表面的一部分或全部，以通过使用多光子吸收工艺来激活p型掺杂剂。当用可以诱导多光子吸收的脉冲激光束L B1照射基板时，形成p型GaN膜109a。因此，提供了在半导体膜中光学活化p型掺杂剂以形成p型半导体区域而不使用热退火的方法。

13. 发明申请

US20050121688A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20050121688A1
公开(公告)日：2005-06-09
申请号：US11001414
申请日：2004-12-02
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/12 , H01L33/32 , H01L33/42 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/00
CPC分类号： H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
摘要翻译：发光器件包括电阻率为0.5Ω·cm以下的氮化物半导体衬底，与氮化物半导体衬底相比，n型氮化物半导体层和p型氮化物半导体层比n型氮化物半导体在氮化物半导体衬底的第一主表面侧的层和位于n型氮化物半导体层和p型氮化物半导体层之间的发光层，其中氮化物半导体衬底和p型氮化物半导体之一层安装在发光的顶侧，而另一个放置在下侧，并且在顶侧放置单个电极。因此，提供了一种发光装置，其具有简单的结构，从而易于制造，可以长时间提供高的发光效率，并且可以容易地小型化。

14. 发明授权

US6049260A Surface acoustic wave filter having parameters optimized to suppress spurious signals 有权
标题翻译：表面声波滤波器具有优化的参数以抑制杂散信号
公开(公告)号：US6049260A
公开(公告)日：2000-04-11
申请号：US231657
申请日：1999-01-15
申请人： Susumu Yoshimoto , Yasushi Yamamoto
发明人： Susumu Yoshimoto , Yasushi Yamamoto
IPC分类号： H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6433 , H03H9/25
摘要： A surface acoustic wave filter includes IDTs on an input side and on an output side, the Inter Digital Transducers (IDTs) are formed by depositing a thin film made of aluminum and the like on a piezoelectric substrate made of crystal, and disposed on the substrate with a spacing interposed therebetween. The width of each electrode digit of each IDT is 1/4 of the wavelength of the surface acoustic wave during resonance. A reflection coefficient .epsilon. per electrode digit and the total number N of pairs of the electrode digits constituting the IDTs on the input side and on the output side are set to satisfy N.epsilon..gtoreq.0.55. Also, the aperture width W.lambda. of a surface acoustic wave transmission path, the center frequency of the filter f in units of Hertz , and the thickness of the electrode digits H in units of meters, are set to satisfy fH.ltoreq.-17.5W+210.
摘要翻译：表面声波滤波器包括输入侧和输出侧的IDT，通过将由铝等制成的薄膜沉积在由晶体制成的压电基板上并且设置在基板上而形成数字间转换器（IDT）间隔开。每个IDT的每个电极数字的宽度是共振期间声表面波波长的+ E，fra 1/4 + EE。构成输入侧和输出侧的IDT的电极数对对的每个电极数的反射系数ε和总数N被设定为满足Nε= 0.55。此外，声表面波传输路径的孔径宽度λλ，以赫兹为单位的滤波器f的中心频率和以米为单位的电极数H的厚度被设置为满足fH≤17.5 W + 210。

15. 发明授权

US08416028B2 Voltage controlled oscillator and electronic component 有权
标题翻译：压控振荡器和电子元件
公开(公告)号：US08416028B2
公开(公告)日：2013-04-09
申请号：US12924467
申请日：2010-09-28
申请人： Junichiro Yamakawa , Kazuo Akaike , Tatsunori Onzuka , Toshimasa Tsuda , Mikio Takano , Yasushi Yamamoto , Susumu Yoshimoto
发明人： Junichiro Yamakawa , Kazuo Akaike , Tatsunori Onzuka , Toshimasa Tsuda , Mikio Takano , Yasushi Yamamoto , Susumu Yoshimoto
IPC分类号： H03B5/01
CPC分类号： H03B5/1243 , H03B5/1203 , H03B2200/0008
摘要： To provide a voltage controlled oscillator having small size and capable of obtaining a low phase noise characteristic over a large span of adjustable range of frequency. A quartz crystal having a characteristic (dielectric loss tangent: tan δ) better than that of fluorocarbon resin, LTCC or the like conventionally used as a substrate of a resonance part, and on which a fine pattern of metal film can be formed through a photolithography method, is used as a quartz-crystal substrate, and a conductive line is formed on the quartz-crystal substrate to form an inductance element in the resonance part. Accordingly, since the resonance part having a high Q value can be formed, it is possible to obtain a voltage controlled oscillator having small size and low loss over a wide frequency range.
摘要翻译：提供具有小尺寸并且能够在可调整频率范围内获得低相位噪声特性的压控振荡器。具有比通常用作共振部件的基板的氟碳树脂，LTCC等的特性（介电损耗角正切：tanδ）更好的石英晶体，并且可以通过光刻法形成金属膜的精细图案方法用作石英衬底，并且在石英衬底上形成导线以在谐振部件中形成电感元件。因此，由于可以形成具有高Q值的谐振部分，所以可以在宽的频率范围内获得具有小尺寸和低损耗的压控振荡器。

16. 发明申请

US20120003822A1 Wafer Guide, MOCVD Equipment, and Nitride Semiconductor Growth Method 审中-公开
标题翻译：晶圆指南，MOCVD设备和氮化物半导体生长方法
公开(公告)号：US20120003822A1
公开(公告)日：2012-01-05
申请号：US13231981
申请日：2011-09-14
申请人： Masaki Ueno , Susumu Yoshimoto , Satoshi Matsuba
发明人： Masaki Ueno , Susumu Yoshimoto , Satoshi Matsuba
IPC分类号： H01L21/20
CPC分类号： H01L21/68771 , C23C16/303 , C23C16/4584 , C30B25/12 , C30B29/403 , H01L21/67103 , H01L21/68 , H01L21/68764
摘要： Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support (15) includes one or more first sections (15a), and a second section (15b) surrounding the first sections (15a). Each first section (15a) includes a surface for supporting wafers (19) on which nitride semiconductor is deposited. In MOCVD tools (11) and (13), a wafer guide (17) is provided on the wafer-support (15) second section (15b). The wafer guide (17) is furnished with a protector (17a) for covering the second section (15b), and one or more openings (17b) for receiving the wafers (19) on the first sections (15a). The protector (17a) has lateral surfaces (17c) defining the openings (17b) and guiding the wafers (19), and receives a wafer (19) in each opening (17b). A wafer (19) is loaded onto the support surface of each wafer-support (15) first section (15a) exposed in that opening (17b).
摘要翻译：用于减少III族氮化物沉积物影响的MOCVD设备的晶圆导轨。晶片支撑件（15）包括一个或多个第一部分（15a）和围绕第一部分（15a）的第二部分（15b）。每个第一部分（15a）包括用于支撑沉积有氮化物半导体的晶片（19）的表面。在MOCVD工具（11）和（13）中，在晶片支撑（15）第二部分（15b）上设置晶片引导件（17）。晶片引导件（17）配备有用于覆盖第二部分（15b）的保护器（17a）和用于在第一部分（15a）上接收晶片（19）的一个或多个开口（17b）。保护器（17a）具有限定开口（17b）并引导晶片（19）的侧表面（17c），并且在每个开口（17b）中接收晶片（19）。将晶片（19）装载到暴露在该开口（17b）中的每个晶片支撑件（15）的第一部分（15a）的支撑表面上。

17. 发明授权

US08012780B2 Method of fabricating semiconductor laser 有权
标题翻译：制造半导体激光器的方法
公开(公告)号：US08012780B2
公开(公告)日：2011-09-06
申请号：US12170998
申请日：2008-07-10
申请人： Susumu Yoshimoto , Hideki Matsubara
发明人： Susumu Yoshimoto , Hideki Matsubara
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/1017 , H01S5/105 , H01S5/1231 , H01S5/2009
摘要： There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1−X1N (0
摘要翻译：提供了一种制造包括二维光子晶体的半导体激光器的方法。该方法包括以下步骤：在反应器中的氮化镓基半导体区域上生长InX1Ga1-X1N（0

18. 发明申请

US20110032051A1 DUPLEXER 有权
标题翻译：双机
公开(公告)号：US20110032051A1
公开(公告)日：2011-02-10
申请号：US12736459
申请日：2009-04-10
申请人： Toshihiko Kawamoto , Susumu Yoshimoto
发明人： Toshihiko Kawamoto , Susumu Yoshimoto
IPC分类号： H03H9/72
CPC分类号： H03H9/02637 , H03H9/6483 , H03H9/725
摘要： Disclosed is a miniaturized duplexer having a good isolation characteristic. A duplexer having a high band side filter and a low band side filter that are each formed in a ladder-type filter provided on a common piezoelectric substrate is provided with a first elastic wave resonator to be included in one of these filters, a second elastic wave resonator to be included in the other of the filters, and a first additional grating reflector provided between these resonators to reflect an elastic wave leaked from a grating reflector of the first elastic wave resonator, and in which an additional grating reflector is not provided on a side opposite to the second elastic wave resonator in the first elastic wave resonator.
摘要翻译：公开了具有良好隔离特性的小型化双工器。具有分别形成在公共压电基板上的梯型滤波器中的高频带侧滤波器和低频带侧滤波器的双工器具备：第一弹性波谐振器，其包含在这些滤波器之一中;第二弹性体波形谐振器被包括在另一个滤波器中，以及第一附加光栅反射器，设置在这些谐振器之间以反射从第一弹性波谐振器的光栅反射器泄漏的弹性波，并且其中不在其上设置附加的光栅反射器在第一弹性波谐振器中与第二弹性波谐振器相对的一侧。

19. 发明申请

US20090047751A1 METHOD OF FABRICATING SEMICONDUCTOR LASER 有权
标题翻译：制造半导体激光的方法
公开(公告)号：US20090047751A1
公开(公告)日：2009-02-19
申请号：US12170998
申请日：2008-07-10
申请人： Susumu Yoshimoto , Hideki Matsubara
发明人： Susumu Yoshimoto , Hideki Matsubara
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/1017 , H01S5/105 , H01S5/1231 , H01S5/2009
摘要： There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1-X1N (0
摘要翻译：提供了一种制造包括二维光子晶体的半导体激光器的方法。该方法包括以下步骤：在反应器中的氮化镓基半导体区域上生长InX1Ga1-X1N（0

20. 发明申请

US20080210959A1 Light emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US20080210959A1
公开(公告)日：2008-09-04
申请号：US11727425
申请日：2007-03-27
申请人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
发明人： Youichi Nagai , Makoto Kiyama , Takao Nakamura , Takashi Sakurada , Katsushi Akita , Koji Uematsu , Ayako Ikeda , Koji Katayama , Susumu Yoshimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
摘要翻译：为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和在第一主表面侧的p型氮化物半导体层。氮化物半导体衬底的电阻率为0.5Ω·cm以下，p型氮化物半导体层侧被下放，使得从氮化物半导体衬底的第二主表面在与第一主体相反的一侧发射光表面。

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