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11. 发明授权

US08558295B2 Nonvolatile memory cell and method of manufacturing the same 有权
标题翻译：非易失性存储单元及其制造方法
公开(公告)号：US08558295B2
公开(公告)日：2013-10-15
申请号：US12838878
申请日：2010-07-19
申请人： Sung Min Yoon , Chun Won Byun , Shin Hyuk Yang , Sang Hee Park , Soon Won Jung , Seung Youl Kang , Chi Sun Hwang , Byoung Gon Yu
发明人： Sung Min Yoon , Chun Won Byun , Shin Hyuk Yang , Sang Hee Park , Soon Won Jung , Seung Youl Kang , Chi Sun Hwang , Byoung Gon Yu
IPC分类号： H01G7/06
CPC分类号： H01L29/6684 , B82Y10/00 , G11C11/22 , H01L21/28291 , H01L27/1159 , H01L29/78391
摘要： Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
摘要翻译：提供一种非易失性存储单元及其制造方法。非易失性存储单元包括存储晶体管和驱动晶体管。存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。存储晶体管和驱动晶体管设置在同一衬底上。非易失性存储单元在可见光区域是透明的。

12. 发明授权

US08476106B2 Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US08476106B2
公开(公告)日：2013-07-02
申请号：US13469558
申请日：2012-05-11
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L51/40
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

13. 发明申请

US20130092415A1 CABLE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS FOR DEPOSITING DIELECTRIC LAYER 审中-公开
标题翻译：电缆及其制造方法以及用于沉积介电层的装置
公开(公告)号：US20130092415A1
公开(公告)日：2013-04-18
申请号：US13619066
申请日：2012-09-14
申请人： Yong Suk YANG , In-Kyu YOU , Jae Bon KOO , Soon-Won JUNG
发明人： Yong Suk YANG , In-Kyu YOU , Jae Bon KOO , Soon-Won JUNG
IPC分类号： H01B13/00 , H01B3/30
CPC分类号： H01B3/307 , H01B13/14 , H01B13/141
摘要： The inventive concept provides cables, methods of manufacturing the same, and apparatuses for depositing a dielectric layer. The cable may include a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes and including a polymer having xylene as a monomer.
摘要翻译：本发明的概念提供电缆，其制造方法以及用于沉积电介质层的装置。电缆可以包括第一电极，与第一电极间隔开的第二电极，以及设置在第一和第二电极之间的介电层，并且包括具有二甲苯作为单体的聚合物。

14. 发明授权

US07884347B2 Phase-change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07884347B2
公开(公告)日：2011-02-08
申请号：US12425152
申请日：2009-04-16
申请人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L29/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
摘要翻译：提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层，形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

15. 发明申请

US20100012915A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20100012915A1
公开(公告)日：2010-01-21
申请号：US12425152
申请日：2009-04-16
申请人： Sung Min YOON , Byoung Gon YU , Soon Won JUNG , Seung Yun LEE , Young Sam PARK , Joon Suk LEE
发明人： Sung Min YOON , Byoung Gon YU , Soon Won JUNG , Seung Yun LEE , Young Sam PARK , Joon Suk LEE
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
摘要翻译：提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层，形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

16. 发明申请

US20050141755A1 Method and apparatus for discriminating latent fingerprint in optical fingerprint input apparatus 有权
标题翻译：用于鉴别光学指纹输入设备中的潜在指纹的方法和装置
公开(公告)号：US20050141755A1
公开(公告)日：2005-06-30
申请号：US11067792
申请日：2005-02-28
申请人： Hwi-Seok Lee , Soon-Won Jung , Jae-Hyun Jun
发明人： Hwi-Seok Lee , Soon-Won Jung , Jae-Hyun Jun
IPC分类号： G01B11/24 , G06K9/00 , G06T1/00 , G06T7/00
CPC分类号： G06K9/00013
摘要： A method and an apparatus for distinguishing a latent fingerprint is provided to prevent a fingerprint recognition apparatus from mis-recognizing a latent fingerprint as a fingerprint of a biomass due to a fingerprint residual on an imaging surface of an optical fingerprint input apparatus. According to the present invention, there is provided a backlight control device for controlling switching on and off of the backlight; an image acquisition device for acquiring a fingerprint image without illuminating the backlight onto the imaging surface; a fingerprint detection device for detecting the existence of a fingerprint from the image acquired by the image acquisition device; and a device for determining that the fingerprint, if detected by the fingerprint detection device, is a latent fingerprint detected due to an external light.
摘要翻译：提供了用于区分潜在指纹的方法和装置，以防止指纹识别装置由于光学指纹输入装置的成像表面上的指纹残留而误认为潜在指纹作为生物质的指纹。根据本发明，提供了一种用于控制背光的接通和断开的背光控制装置; 用于获取指纹图像而不将所述背光照射到所述成像表面上的图像获取装置; 指纹检测装置，用于从由图像获取装置获取的图像中检测指纹的存在; 以及用于确定如果由指纹检测装置检测到的指纹是由于外部光检测到的潜在指纹的装置。

17. 发明授权

US08723042B2 Flexible flat cable and manufacturing method thereof 失效
标题翻译：柔性扁平电缆及其制造方法
公开(公告)号：US08723042B2
公开(公告)日：2014-05-13
申请号：US13406546
申请日：2012-02-28
申请人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Su Jae Lee , Taeyoub Kim , Soon-Won Jung , Kang-Jun Baeg
发明人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Su Jae Lee , Taeyoub Kim , Soon-Won Jung , Kang-Jun Baeg
IPC分类号： H01B7/00
CPC分类号： H01B13/06 , H01B3/421 , H01B7/0838 , H01B7/0861 , H01B13/0013
摘要： A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.
摘要翻译：一种柔性扁平电缆，包括线芯，围绕线芯的绝缘涂层，围绕绝缘涂层的屏蔽涂层，形成在屏蔽涂层上的上绝缘板层，形成在屏蔽涂层下面的下绝缘板层，以及与上绝缘板层相对，以及形成在下绝缘板层下方的屏蔽板层。

18. 发明授权

US08445887B2 Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US08445887B2
公开(公告)日：2013-05-21
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

19. 发明申请

US20120235961A1 FLEXIBLE FLAT CABLE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：柔性平板电缆及其制造方法
公开(公告)号：US20120235961A1
公开(公告)日：2012-09-20
申请号：US13406546
申请日：2012-02-28
申请人： Yong Suk YANG , In-Kyu YOU , Jae Bon KOO , Su Jae LEE , Taeyoub KIM , Soon-Won JUNG , Kang-Jun BAEG
发明人： Yong Suk YANG , In-Kyu YOU , Jae Bon KOO , Su Jae LEE , Taeyoub KIM , Soon-Won JUNG , Kang-Jun BAEG
IPC分类号： G09G5/00 , H01B7/08 , B05D5/12 , H01B7/04
CPC分类号： H01B13/06 , H01B3/421 , H01B7/0838 , H01B7/0861 , H01B13/0013
摘要： A flexible flat cable capable of minimizing distortion and interference of a signal and a manufacturing method thereof are provided. The cable includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.
摘要翻译：提供能够最小化信号的失真和干扰的柔性扁平电缆及其制造方法。电缆包括线芯，围绕线芯的绝缘涂层，围绕绝缘涂层的屏蔽涂层，形成在屏蔽涂层上的上绝缘板层，形成在屏蔽涂层下方并与屏蔽涂层相对的下绝缘板层上绝缘板层和形成在下绝缘板层下方的屏蔽板层。

20. 发明申请

US20110049592A1 NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性存储单元及其制造方法
公开(公告)号：US20110049592A1
公开(公告)日：2011-03-03
申请号：US12838878
申请日：2010-07-19
申请人： Sung Min YOON , Chun Won BYUN , Shin Hyuk YANG , Sang Hee PARK , Soon Won JUNG , Seung Youl KANG , Chi Sun HWANG , Byoung Gon YUN
发明人： Sung Min YOON , Chun Won BYUN , Shin Hyuk YANG , Sang Hee PARK , Soon Won JUNG , Seung Youl KANG , Chi Sun HWANG , Byoung Gon YUN
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/6684 , B82Y10/00 , G11C11/22 , H01L21/28291 , H01L27/1159 , H01L29/78391
摘要： Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
摘要翻译：提供一种非易失性存储单元及其制造方法。非易失性存储单元包括存储晶体管和驱动晶体管。存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。存储晶体管和驱动晶体管设置在同一衬底上。非易失性存储单元在可见光区域是透明的。

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