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1. 发明授权

US08723042B2 Flexible flat cable and manufacturing method thereof 失效
标题翻译：柔性扁平电缆及其制造方法
公开(公告)号：US08723042B2
公开(公告)日：2014-05-13
申请号：US13406546
申请日：2012-02-28
申请人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Su Jae Lee , Taeyoub Kim , Soon-Won Jung , Kang-Jun Baeg
发明人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Su Jae Lee , Taeyoub Kim , Soon-Won Jung , Kang-Jun Baeg
IPC分类号： H01B7/00
CPC分类号： H01B13/06 , H01B3/421 , H01B7/0838 , H01B7/0861 , H01B13/0013
摘要： A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.
摘要翻译：一种柔性扁平电缆，包括线芯，围绕线芯的绝缘涂层，围绕绝缘涂层的屏蔽涂层，形成在屏蔽涂层上的上绝缘板层，形成在屏蔽涂层下面的下绝缘板层，以及与上绝缘板层相对，以及形成在下绝缘板层下方的屏蔽板层。

2. 发明申请

US20120125214A1 OFFSET PRINTER 有权
标题翻译：偏移打印机
公开(公告)号：US20120125214A1
公开(公告)日：2012-05-24
申请号：US13294201
申请日：2011-11-11
申请人： Jae Bon Koo , In-Kyu You , Minseok Kim , Taeyoub Kim
发明人： Jae Bon Koo , In-Kyu You , Minseok Kim , Taeyoub Kim
IPC分类号： B41F35/04
CPC分类号： B41F3/36 , B41F3/46 , B41F3/52
摘要： Provided is an offset printer configured to increase or maximize productivity and yield. The offset printer includes a printing roller, a coating unit configured to apply a printing substance to the printing roller, a patterning unit configured to pattern the printing substance applied to the printing roller from the coating unit, a printing unit configured to transfer the patterned printing substance to a printing medium, and a cleaning unit configured to clean the printing substance remaining on the printing roller by a dry cleaning method.
摘要翻译：提供了配置成增加或最大化生产率和产量的胶版印刷机。胶版印刷机包括印刷辊，被配置为将印刷物质施加到印刷辊的涂布单元，配置成从涂布单元对施加到印刷辊上的印刷物质进行图案化的图案形成单元;被配置为将图案印刷物质到打印介质，以及清洁单元，其构造成通过干洗方法清洁残留在印刷辊上的印刷物质。

3. 发明授权

US08656836B2 Offset printer 有权
标题翻译：胶印机
公开(公告)号：US08656836B2
公开(公告)日：2014-02-25
申请号：US13294201
申请日：2011-11-11
申请人： Jae Bon Koo , In-Kyu You , Minseok Kim , Taeyoub Kim
发明人： Jae Bon Koo , In-Kyu You , Minseok Kim , Taeyoub Kim
IPC分类号： B41F35/00
CPC分类号： B41F3/36 , B41F3/46 , B41F3/52
摘要： Provided is an offset printer configured to increase or maximize productivity and yield. The offset printer includes a printing roller, a coating unit configured to apply a printing substance to the printing roller, a patterning unit configured to pattern the printing substance applied to the printing roller from the coating unit, a printing unit configured to transfer the patterned printing substance to a printing medium, and a cleaning unit configured to clean the printing substance remaining on the printing roller by a dry cleaning method.
摘要翻译：提供了配置成增加或最大化生产率和产量的胶版印刷机。胶版印刷机包括印刷辊，被配置为将印刷物质施加到印刷辊的涂布单元，配置成从涂布单元对施加到印刷辊上的印刷物质进行图案化的图案形成单元;被配置为将图案印刷物质到打印介质，以及清洁单元，其构造成通过干洗方法清洁残留在印刷辊上的印刷物质。

4. 发明申请

US20120125213A1 CLICHE AND MANUFACTURING METHOD FOR THE SAME 审中-公开
标题翻译： CLICHE及其制造方法
公开(公告)号：US20120125213A1
公开(公告)日：2012-05-24
申请号：US13193668
申请日：2011-07-29
申请人： Jae Bon KOO , Minseok Kim , Taeyoub Kim , In-Kyu You
发明人： Jae Bon KOO , Minseok Kim , Taeyoub Kim , In-Kyu You
IPC分类号： B41N1/04 , B41C3/00
CPC分类号： B41N1/06 , G03F7/40
摘要： Provided is a cliche and a method of manufacturing the cliche which can increase or maximize productivity and production yield. The manufacturing method of the cliche includes providing a substrate, forming organic patterns protruding on the substrate, and forming an ink absorption layer on the organic patterns or on the substrate exposed from the organic patterns.
摘要翻译：提供了可以增加或最大化生产率和生产率的陈词滥调和制造方法。制造方法包括提供衬底，形成在衬底上突出的有机图案，以及在有机图案上或在有机图案上露出的衬底上形成墨吸收层。

5. 发明授权

US08169006B2 Bio-sensor chip for detecting target material 有权
标题翻译：用于检测目标材料的生物传感器芯片
公开(公告)号：US08169006B2
公开(公告)日：2012-05-01
申请号：US12561032
申请日：2009-09-16
申请人： Taeyoub Kim , Jong-Heon Yang , Chang-Geun Ahn , Chan Woo Park , Chil Seong Ah , Ansoon Kim , In Bok Baek , Gun Yong Sung , Seon Hee Park
发明人： Taeyoub Kim , Jong-Heon Yang , Chang-Geun Ahn , Chan Woo Park , Chil Seong Ah , Ansoon Kim , In Bok Baek , Gun Yong Sung , Seon Hee Park
IPC分类号： G01N27/403
CPC分类号： B01L3/502715 , B01L9/527 , B01L2200/025 , B01L2300/0645 , B01L2300/0822 , G01N27/4145 , G01N27/4146
摘要： Provided is a bio-sensor chip. The bio-sensor chip includes a sensing part, a board circuit part, a channel part, and a cover. In the sensing part, a target material and a detection material interact with each other to detect the target material. The board circuit part is electrically connected to the sensing part. The channel part provides a solution material containing the target material into the sensing part. The cover is coupled to the board circuit part to cover the channel part and the sensing part.
摘要翻译：提供了一种生物传感器芯片。生物传感器芯片包括感测部分，板电路部分，通道部分和盖子。在感测部分中，目标材料和检测材料相互作用以检测目标材料。板电路部分电连接到感测部分。通道部分将包含目标材料的溶液材料提供到感测部件中。盖板连接到板电路部分以覆盖通道部分和感测部分。

6. 发明申请

US20110165557A1 APPARATUS AND METHOD FOR DETECTING BIOMOLECULES 有权
标题翻译：检测生物分子的装置和方法
公开(公告)号：US20110165557A1
公开(公告)日：2011-07-07
申请号：US13062146
申请日：2008-11-20
申请人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
发明人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
IPC分类号： C12Q1/70 , G01N27/00 , C12M1/34 , G01N27/416 , G01N33/53 , G01N33/00 , G01N33/573
CPC分类号： G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
摘要： Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.
摘要翻译：提供了用于检测生物分子的装置和方法。该装置包括具有基板，源电极，漏电极，源极和漏极之间的沟道区以及固定到沟道区的探针分子的FET，其中源极和漏极在衬底上分离，微流体供应商选择性地将低离子浓度的参考缓冲溶液和含有靶分子的高离子浓度的反应溶液中的一种提供给探针分子固定的FET的通道区域，以及通过测量来检测靶分子的生物分子检测器 FET的沟道区域的第一电流值和在高离子浓度的反应溶液中彼此结合的靶分子和探针分子的FET的沟道区域的第二电流值是固定的。

7. 发明申请

US20110139637A1 METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR 失效
标题翻译：使用场效应晶体管测量电压点的方法和装置
公开(公告)号：US20110139637A1
公开(公告)日：2011-06-16
申请号：US13058120
申请日：2008-12-16
申请人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
发明人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
IPC分类号： G01N27/403 , G01N27/414
CPC分类号： G01N27/4145
摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.
摘要翻译：提供了使用场效应晶体管测量等电点的方法和装置。该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏极彼此间隔开的沟道区，以及在源电极和漏电极之间的沟道区域，提供具有第一浓度到沟道的第一电解质溶液区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

8. 发明授权

US06998643B2 Silicon-based light emitting diode 有权
标题翻译：硅基发光二极管
公开(公告)号：US06998643B2
公开(公告)日：2006-02-14
申请号：US10923230
申请日：2004-08-20
申请人： Taeyoub Kim , Nae Man Park , Gun Yong Sung
发明人： Taeyoub Kim , Nae Man Park , Gun Yong Sung
IPC分类号： H01L27/15
CPC分类号： H01L33/34 , H01L33/105 , H01L33/24 , H01L33/465
摘要： A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.
摘要翻译：硅基发光二极管同时采用掺杂层和分布式布拉格反射器（DBR）。硅基发光二极管包括具有相对于第一侧和第二侧的有源层。第一反射部分面向有源层的第一侧，并且第二反射部分面向有源层的第二侧。第一掺杂层介于有源层和第一反射部分之间。第二掺杂层介于有源层和第二反射部分之间。第一电极可电连接到第一掺杂层，第二电极可电连接到第二掺杂层。这里，第一反射部和第二反射部中的至少一个具有通过交替堆叠两种不同构成的含硅绝缘层和栅极而形成的DBR。

9. 发明申请

US20050139847A1 Silicon-based light emitting diode 有权
标题翻译：硅基发光二极管
公开(公告)号：US20050139847A1
公开(公告)日：2005-06-30
申请号：US10923230
申请日：2004-08-20
申请人： Taeyoub Kim , Nae Park , Gun Sung
发明人： Taeyoub Kim , Nae Park , Gun Sung
IPC分类号： H01L33/10 , H01L33/24 , H01L33/34 , H01L33/46 , H01L33/00
CPC分类号： H01L33/34 , H01L33/105 , H01L33/24 , H01L33/465
摘要： A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.
摘要翻译：硅基发光二极管同时采用掺杂层和分布式布拉格反射器（DBR）。硅基发光二极管包括具有相对于第一侧和第二侧的有源层。第一反射部分面向有源层的第一侧，并且第二反射部分面向有源层的第二侧。第一掺杂层介于有源层和第一反射部分之间。第二掺杂层介于有源层和第二反射部分之间。第一电极可电连接到第一掺杂层，第二电极可电连接到第二掺杂层。这里，第一反射部和第二反射部中的至少一个具有通过交替堆叠两种不同构成的含硅绝缘层和栅极而形成的DBR。

10. 发明授权

US08628650B2 Method and apparatus for measuring isoelectric point using field effect transistor 失效
标题翻译：使用场效应晶体管测量等电点的方法和装置
公开(公告)号：US08628650B2
公开(公告)日：2014-01-14
申请号：US13058120
申请日：2008-12-16
申请人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
发明人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
IPC分类号： B03C5/02
CPC分类号： G01N27/4145
摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.
摘要翻译：提供了使用场效应晶体管测量等电点的方法和装置。该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏极彼此间隔开的沟道区，以及在源电极和漏电极之间的沟道区域，提供具有第一浓度到沟道的第一电解质溶液区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

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