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11. 发明申请

US20070114537A1 Electro-optical device and manufacturing method thereof 有权
公开(公告)号：US20070114537A1
公开(公告)日：2007-05-24
申请号：US11654781
申请日：2007-01-18
申请人： Shunpei Yamazaki , Hisashi Ohtani , Setsuo Nakajima
发明人： Shunpei Yamazaki , Hisashi Ohtani , Setsuo Nakajima
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L29/78645 , H01L27/124 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.

12. 发明授权

US07202499B2 Semiconductor device including two transistors and capacitive part 有权
标题翻译：半导体器件包括两个晶体管和电容部分
公开(公告)号：US07202499B2
公开(公告)日：2007-04-10
申请号：US10946466
申请日：2004-09-21
申请人： Setsuo Nakajima
发明人： Setsuo Nakajima
IPC分类号： H01L29/10
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconductor film and is highly reliable.The TFT of crystalline semiconductor film has the gate electrode formed from a first gate electrode 113 and a second gate electrode in close contact with said first gate electrode and gate insulating film. The LDD is formed by ion doping using said first gate electrode as a mask, and the source-drain region is formed using said second gate electrode as a mask. After that the second gate electrode in the desired region is selectively removed. In this way it is possible to form LDD region which overlaps with the second gate electrode.
摘要翻译：本发明的目的是提供一种其中栅电极与LDD区重叠的新结构的TFT和其中栅电极不与LDD区重叠的结构的TFT。 TFT由晶体半导体膜制成，可靠性高。

13. 发明申请

US20060207714A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20060207714A1
公开(公告)日：2006-09-21
申请号：US11421168
申请日：2006-05-31
申请人： Shunpei Yamazaki , Setsuo Nakajima
发明人： Shunpei Yamazaki , Setsuo Nakajima
IPC分类号： B32B38/10
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/322 , H01L27/3244 , H01L27/3283 , H01L51/0001 , H01L51/524 , H01L2227/326 , Y10S156/924 , Y10S438/977 , Y10T156/1189
摘要： To provide a technique for manufacturing a high-performance display device by employing a plastic substrate. A peeling layer is formed on an element-forming substrate, and a semiconductor element and a luminous element are further formed thereon. Then, a fixed substrate (130) is bonded on the luminous element by using a first adhesive (129) The entire substrate in this state is exposed in a gas containing halogen fluoride to thereby remove the peeling layer and separate the element-forming substrate. Thereafter, a bonding substrate (132)that comprises a plastic substrate is bonded in place of the separated element-forming substrate.
摘要翻译：提供采用塑料基板制造高性能显示装置的技术。在元件形成基板上形成剥离层，并且还在其上形成半导体元件和发光元件。然后，通过使用第一粘合剂（129）将固定基板（130）接合在发光元件上。在该状态下的整个基板在含有卤素氟化物的气体中暴露，从而除去剥离层并分离元件形成基板。此后，粘合包括塑料基板的接合基板（132）代替分离的元件形成基板。

14. 发明授权

US07015083B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07015083B2
公开(公告)日：2006-03-21
申请号：US10944933
申请日：2004-09-21
申请人： Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
IPC分类号： H01L21/84
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L27/3244 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L2251/5315
摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
摘要翻译：通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜。接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

15. 发明申请

US20050233512A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050233512A1
公开(公告)日：2005-10-20
申请号：US11154846
申请日：2005-06-16
申请人： Koichiro Tanaka , Setsuo Nakajima
发明人： Koichiro Tanaka , Setsuo Nakajima
IPC分类号： B23K26/06 , B23K26/067 , H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/32136 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.
摘要翻译：在与传统装置相比具有低运行成本的激光照射装置和使用其的激光束照射方法中，形成具有等于或大于常规晶粒尺寸的晶粒的晶体半导体膜，并且通过使用晶体半导体膜制造TFT，从而实现能够进行高速运转的TFT。在将来自固体激光器作为光源的短输出时间的激光束照射到半导体膜的情况下，另一个激光束从一个激光束延迟，并且激光束被合成以照射到半导体膜，使得半导体膜的冷却速度变得平缓，并且可以形成具有等于或大于具有长输出时间的激光束的晶粒尺寸的晶粒的晶粒的晶体半导体膜照射到半导体膜。通过使用这种晶体半导体膜制造TFT，可以实现能够进行高速操作的TFT。

16. 发明申请

US20050051773A1 Semiconductor device and process for production thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050051773A1
公开(公告)日：2005-03-10
申请号：US10946466
申请日：2004-09-21
申请人： Setsuo Nakajima
发明人： Setsuo Nakajima
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/49 , H01L29/786 , H01L29/76
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconductor film and is highly reliable. The TFT of crystalline semiconductor film has the gate electrode formed from a first gate electrode 113 and a second gate electrode in close contact with said first gate electrode and gate insulating film. The LDD is formed by ion doping using said first gate electrode as a mask, and the source-drain region is formed using said second gate electrode as a mask. After that the second gate electrode in the desired region is selectively removed. In this way it is possible to form LDD region which overlaps with the second gate electrode.
摘要翻译：本发明的目的是提供一种其中栅电极与LDD区重叠的新结构的TFT和其中栅电极不与LDD区重叠的结构的TFT。 TFT由晶体半导体膜制成，可靠性高。晶体半导体膜的TFT具有由第一栅电极113和与所述第一栅电极和栅极绝缘膜紧密接触的第二栅极形成的栅电极。通过使用所述第一栅电极作为掩模的离子掺杂形成LDD，并且使用所述第二栅电极作为掩模形成源极 - 漏极区。之后，选择性地去除所需区域中的第二栅电极。以这种方式，可以形成与第二栅电极重叠的LDD区域。

17. 发明申请

US20050016457A1 Plasma film forming system 失效
标题翻译：等离子体成膜系统
公开(公告)号：US20050016457A1
公开(公告)日：2005-01-27
申请号：US10500317
申请日：2003-10-07
申请人： Shinichi Kawasaki , Sumio Nakatake , Hiroya Kitahata , Setsuo Nakajima , Yuji Eguchi , Junichiro Anzai , Yoshinori Nakano
发明人： Shinichi Kawasaki , Sumio Nakatake , Hiroya Kitahata , Setsuo Nakajima , Yuji Eguchi , Junichiro Anzai , Yoshinori Nakano
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , C23C16/509 , H01J37/32 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/452 , C23C16/45514 , C23C16/45563 , C23C16/45595 , C23C16/509 , H01J37/3244
摘要： In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a. By this, the apparatus composing members such as electrodes can be prevented from being adhered with a film.
摘要翻译：在等离子体成膜装置中，以第二电极52，第一电极51，第一电极51和第二电极52的顺序排列连接到电源4和两个接地的第二电极52的两个第一电极51。形成在中央第一电极51之间的第一流路50a允许形成为膜的原料气体（第一气体）通过。形成在两侧的第一和第二电极51,52之间的第二流动通道的等离子体放电空间50b允许可激发气体（第二气体）通过，可激发气体通过等离子体排出，使得原料可以形成膜，但是可兴奋的气体本身仅仅被激发而不形成膜。那些气体在第一和第二流动通道之间的交叉部分20c会聚，并经由共同的吹气通道25a吹出。由此，可以防止构成诸如电极的构件的装置被膜粘附。

18. 发明授权

US06835986B2 Liquid crystal display device and manufacturing method thereof 失效
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US06835986B2
公开(公告)日：2004-12-28
申请号：US09822462
申请日：2001-04-02
申请人： Setsuo Nakajima , Naoki Makita
发明人： Setsuo Nakajima , Naoki Makita
IPC分类号： H01L2976
CPC分类号： G02F1/1368 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： To manufacture a liquid crystal display device with high thin film transistor accumulation, high productivity and high reliability by efficiently gettering a catalyst element, which promotes crystallization of an amorphous silicon film, from a channel region. In order to solve the above object, a step of providing a gettering sink on the outside of a p-channel thin film transistor region, and a step of removing a region provided on the outside of the thin film transistor region within the region where the catalyst element is gettered in a self-aligning manner by a source wiring or a drain wiring, are combined.
摘要翻译：通过从沟道区域有效地吸收促进非晶硅膜结晶的催化剂元件，制造具有高薄膜晶体管积聚的液晶显示装置，高生产率和高可靠性。为了解决上述目的，提供了一种在p沟道薄膜晶体管区域的外部设置吸收阱的步骤，以及在该区域内去除设置在薄膜晶体管区域的外部的区域的步骤，催化剂元件通过源极布线或漏极布线以自对准的方式被吸收。

19. 发明授权

US06835675B2 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06835675B2
公开(公告)日：2004-12-28
申请号：US10316605
申请日：2002-12-10
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2126
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

20. 发明授权

US06791112B2 Electro-optical device and manufacturing method thereof 有权
标题翻译：电光装置及其制造方法
公开(公告)号：US06791112B2
公开(公告)日：2004-09-14
申请号：US10262261
申请日：2002-10-01
申请人： Shunpei Yamazaki , Hisashi Ohtani , Setsuo Nakajima
发明人： Shunpei Yamazaki , Hisashi Ohtani , Setsuo Nakajima
IPC分类号： H01L2904
CPC分类号： H01L29/78645 , H01L27/124 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.
摘要翻译：提供了使用高可靠性TFT结构的半导体器件。 n沟道型TFT的栅电极由覆盖第一栅电极的第一栅电极和第二栅极形成。 LDD区域具有通过栅极绝缘膜与第二栅电极重叠的部分，以及不重叠的部分。结果，可以防止TFT在导通状态下的劣化，并且可以将关闭状态下的漏电流减少。

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