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1. 发明授权

US07759181B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07759181B2
公开(公告)日：2010-07-20
申请号：US11154846
申请日：2005-06-16
申请人： Koichiro Tanaka , Setsuo Nakajima
发明人： Koichiro Tanaka , Setsuo Nakajima
IPC分类号： H01L21/84
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/32136 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.
摘要翻译：在与传统装置相比具有低运行成本的激光照射装置和使用其的激光束照射方法中，形成具有等于或大于常规晶粒尺寸的晶粒的晶体半导体膜，并且通过使用晶体半导体膜制造TFT，从而实现能够进行高速运转的TFT。在将来自固体激光器作为光源的短输出时间的激光束照射到半导体膜的情况下，另一个激光束从一个激光束延迟，并且激光束被合成以照射到半导体膜，使得半导体膜的冷却速度变得平缓，并且可以形成具有等于或大于具有长输出时间的激光束的晶粒尺寸的晶粒的晶粒的晶体半导体膜照射到半导体膜。通过使用这种晶体半导体膜制造TFT，可以实现能够进行高速操作的TFT。

2. 发明申请

US20050233512A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050233512A1
公开(公告)日：2005-10-20
申请号：US11154846
申请日：2005-06-16
申请人： Koichiro Tanaka , Setsuo Nakajima
发明人： Koichiro Tanaka , Setsuo Nakajima
IPC分类号： B23K26/06 , B23K26/067 , H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/32136 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.
摘要翻译：在与传统装置相比具有低运行成本的激光照射装置和使用其的激光束照射方法中，形成具有等于或大于常规晶粒尺寸的晶粒的晶体半导体膜，并且通过使用晶体半导体膜制造TFT，从而实现能够进行高速运转的TFT。在将来自固体激光器作为光源的短输出时间的激光束照射到半导体膜的情况下，另一个激光束从一个激光束延迟，并且激光束被合成以照射到半导体膜，使得半导体膜的冷却速度变得平缓，并且可以形成具有等于或大于具有长输出时间的激光束的晶粒尺寸的晶粒的晶粒的晶体半导体膜照射到半导体膜。通过使用这种晶体半导体膜制造TFT，可以实现能够进行高速操作的TFT。

3. 发明授权

US06621636B2 Laser irradiation apparatus and method of laser irradiation 有权
公开(公告)号：US06621636B2
公开(公告)日：2003-09-16
申请号：US10026340
申请日：2001-12-21
申请人： Koichiro Tanaka , Setsuo Nakajima , Takehito Yagi , Mikito Ishii , Kenichiro Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Koichiro Tanaka , Setsuo Nakajima , Takehito Yagi , Mikito Ishii , Kenichiro Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： G02B2710
CPC分类号： G02B27/108 , G02B27/145
摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

4. 发明授权

US06955956B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US06955956B2
公开(公告)日：2005-10-18
申请号：US10034022
申请日：2001-12-20
申请人： Koichiro Tanaka , Setsuo Nakajima
发明人： Koichiro Tanaka , Setsuo Nakajima
IPC分类号： B23K26/06 , B23K26/067 , H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/32136 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.

5. 发明授权

US09099355B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09099355B2
公开(公告)日：2015-08-04
申请号：US13479376
申请日：2012-05-24
申请人： Shunpei Yamazaki , Jun Koyama , Setsuo Nakajima
发明人： Shunpei Yamazaki , Jun Koyama , Setsuo Nakajima
IPC分类号： H01L29/04 , H01L27/12 , G02F1/1362
CPC分类号： H01L27/1288 , G02F2001/136231 , H01L27/1214
摘要： A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.
摘要翻译：显示装置包括主体，支撑架和显示部。显示部分包括具有TFT和电容器的像素。电容器包括绝缘表面上的电容器电极，电容器电极上的绝缘膜和绝缘膜上的TFT的像素电极。

6. 发明申请

US20100311212A1 METHOD FOR PRODUCING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20100311212A1
公开(公告)日：2010-12-09
申请号：US12844858
申请日：2010-07-28
申请人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： H01L21/762 , H01L21/84
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/13452 , G02F2001/13613 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/1218 , H01L2221/68368 , H01L2224/24051 , H01L2224/24226 , H01L2224/24998 , H01L2224/82007 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.
摘要翻译：在液晶显示装置中，第一基板包括电布线和半导体集成电路，该半导体集成电路具有TFT并且与电布线电连接，第二基板在其表面上包括透明导电膜。形成电气配线的第一基板的表面与第二基板上的透明导电膜相反。半导体集成电路具有与显示装置的显示屏（即，矩阵电路）的一侧基本相同的长度，并且通过从另一基板剥离然后在第一基板上形成。另外，在液晶显示装置中，第一基板包括矩阵电路和外围驱动电路，第二基板与第一基板相对，包括矩阵电路和外围驱动电路，并且至少具有与矩阵电路和外围驱动电路。隔板设置在第一和第二基板之间。在第一和第二基板中的矩阵电路和外围驱动电路之外形成密封材料。将液晶材料填充在由密封材料包围的区域内。在外围驱动电路上形成保护膜，其厚度基本上等于由间隔物形成的基板之间的间隔。

7. 发明授权

US07635866B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07635866B2
公开(公告)日：2009-12-22
申请号：US11553009
申请日：2006-10-26
申请人： Setsuo Nakajima , Ritsuko Kawasaki
发明人： Setsuo Nakajima , Ritsuko Kawasaki
IPC分类号： H01L31/036 , H01L31/00
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/78603 , H01L29/78606 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L29/78645
摘要： Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temperature difference is produced between a semiconductor film 1010 positioned above a heat absorbing layer 1011 and a semiconductor film 1013 of the other region to produce a difference in thermal expansion at the boundary of the outside end 1015 of the heat absorbing layer. This difference produces a strain to form a surface wave. The surface wave starting at the outer periphery of the heat absorbing layer is formed in the vicinity of the heat absorbing layer. When the semiconductor layer is solidified after it is melted, the protrusions of the surface wave remain as protrusions after the semiconductor film is solidified.
摘要翻译：在通过激光结晶法等形成的结晶半导体膜的表面上形成称为隆起的突起。在半导体膜的下方形成有吸热层。当通过激光使半导体膜结晶时，在位于吸热层1011之上的半导体膜1010与另一区域的半导体膜1013之间产生温度差，以产生外端1015的边界处的热膨胀差的吸热层。该差异产生形成表面波的应变。在吸热层的外周形成的表面波形成在吸热层的附近。当半导体层在熔融之后固化时，半导体膜固化后表面波的突起保持为突起。

8. 发明申请

US20090185130A1 DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090185130A1
公开(公告)日：2009-07-23
申请号：US12264641
申请日：2008-11-04
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/1341
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/133305 , G02F1/1345 , G02F1/13454 , H01L21/67132 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.
摘要翻译：一种制造用于无源矩阵或有源矩阵电光显示装置如液晶显示器的驱动电路的方法。驱动电路占用的空间比以前少。使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。随后，驱动电路的基板被去除。这使得电路的配置比TAB方法或COG方法所要求的电路的配置简单得多，因为导线不是以复杂的方式铺设。驱动电路可以形成在诸如玻璃基板的大面积基板上。显示装置可以形成在具有高抗冲击性的轻质材料上，例如塑料基板。因此，可以获得具有优异便携性的显示装置。

9. 发明申请

US20090033818A1 Semiconductor Device and Method of Manufacturing the Semiconductor Device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090033818A1
公开(公告)日：2009-02-05
申请号：US12199086
申请日：2008-08-27
申请人： Setsuo Nakajima , Yasuyuki Arai
发明人： Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/136
CPC分类号： H01L29/511 , G02F1/1345 , G02F1/1368 , G02F2001/136231 , G02F2001/13629 , G02F2001/136295 , H01L27/1248 , H01L27/1288 , H01L29/4908 , H01L29/78669
摘要： In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.
摘要翻译：在半导体装置中，由反无交错型TFT构成的无机材料形成的第一层间绝缘层，形成在第一层间绝缘层上的由有机材料构成的第二层间绝缘层和与第一层间绝缘层形成的像素电极第二层间绝缘层设置在基板上，并且在基板的端部上设置与另一基板的布线电连接的输入端子部。输入端子部分包括由与栅电极相同的材料制成的第一层和由与像素电极相同的材料制成的第二层。利用这种结构，光刻方法中使用的光掩模的数量可以减少到5个。

10. 发明申请

US20080188022A1 Semiconductor Display Devices 有权
标题翻译：半导体显示设备
公开(公告)号：US20080188022A1
公开(公告)日：2008-08-07
申请号：US12057994
申请日：2008-03-28
申请人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： H01L21/70
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/13452 , G02F2001/13613 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/1218 , H01L2221/68368 , H01L2224/24051 , H01L2224/24226 , H01L2224/24998 , H01L2224/82007 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.
摘要翻译：在液晶显示装置中，第一基板包括电布线和半导体集成电路，该半导体集成电路具有TFT并且与电布线电连接，第二基板在其表面上包括透明导电膜。形成电气配线的第一基板的表面与第二基板上的透明导电膜相反。半导体集成电路具有与显示装置的显示屏（即，矩阵电路）的一侧基本相同的长度，并且通过从另一基板剥离然后在第一基板上形成。另外，在液晶显示装置中，第一基板包括矩阵电路和外围驱动电路，第二基板与第一基板相对，包括矩阵电路和外围驱动电路，并且至少具有与矩阵电路和外围驱动电路。隔板设置在第一和第二基板之间。在第一和第二基板中的矩阵电路和外围驱动电路之外形成密封材料。将液晶材料填充在由密封材料包围的区域内。在外围驱动电路上形成保护膜，其厚度基本上等于由间隔物形成的基板之间的间隔。

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