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11. 发明申请

US20090027529A1 Image sensor with wide operating range 有权
标题翻译：图像传感器，工作范围宽
公开(公告)号：US20090027529A1
公开(公告)日：2009-01-29
申请号：US12218287
申请日：2008-07-14
申请人： Sang-Il Jung , Min-Young Jung
发明人： Sang-Il Jung , Min-Young Jung
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H01L27/14609 , H01L27/14689 , H04N5/374
摘要： An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.
摘要翻译：图像传感器包括光电转换器，源极跟随器晶体管和选择晶体管。光电转换器响应于接收到的光而产生电荷，电荷改变检测节点的电压。源极 - 跟随器晶体管耦合在检测节点和输出节点之间并且具有第一阈值电压。选择晶体管被耦合在源极跟随器晶体管和具有施加在其上的电源电压或升压电压的电压节点之间，并且具有小于第一阈值电压的幅度的幅度的第二阈值电压，使得源极跟随器晶体管工作在饱和状态。

12. 发明授权

US07459328B2 Image sensor and method of manufacturing the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07459328B2
公开(公告)日：2008-12-02
申请号：US12029843
申请日：2008-02-12
申请人： Sang-Il Jung
发明人： Sang-Il Jung
IPC分类号： H01L31/109 , H01L31/10
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689
摘要： An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.
摘要翻译：公开了一种用于最小化暗层缺陷的图像传感器。图像传感器包括形成在基板上的隔离层。通过隔离层在衬底上限定场区域和有源区域。在图像传感器中形成光电二极管，其结构是使第一区域形成在有源区域中的衬底的表面下方，并且在第一区域形成第二区域。将第一导电型杂质注入第一区域，并将第二导电型杂质注入第二区域。在与第一区域相邻的隔离层的侧表面和底表面上形成暗电流抑制器，并且暗电流抑制器掺杂有第二导电类型杂质。暗电流抑制器抑制暗电流以最小化由暗电流引起的暗电平缺陷。

13. 发明授权

US06686259B2 Method for manufacturing solid state image pick-up device 失效
标题翻译：固态摄像装置的制造方法
公开(公告)号：US06686259B2
公开(公告)日：2004-02-03
申请号：US09994507
申请日：2001-11-27
申请人： Sang-sik Park , Mikio Takagi , Jae-heon Choi , Sang-il Jung , Jun-taek Lee
发明人： Sang-sik Park , Mikio Takagi , Jae-heon Choi , Sang-il Jung , Jun-taek Lee
IPC分类号： H01L21322
CPC分类号： H01L21/3221 , H01L27/14601 , H01L27/14665
摘要： In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.
摘要翻译：在制造能够提高吸气效率的固体摄像装置的方法中，提供了可以形成固体摄像装置的正面的半导体衬底和与正面相反的后侧。随后，在半导体衬底的后侧形成包含具有预定浓度的吸杂杂质的多晶硅层。接下来，包含用于吸杂的杂质的多晶硅层的预定厚度被氧化，并且用于吸杂的杂质被冷凝成还原的多晶硅层。

14. 发明授权

US07989861B2 Image sensor and method of stabilizing a black level in an image sensor 有权
标题翻译：图像传感器和稳定图像传感器黑色电平的方法
公开(公告)号：US07989861B2
公开(公告)日：2011-08-02
申请号：US12196491
申请日：2008-08-22
申请人： Yi-Tae Kim , Sang-Il Jung , Yun-Ho Jang , Kyung-Ho Lee , Sae-Young Kim
发明人： Yi-Tae Kim , Sang-Il Jung , Yun-Ho Jang , Kyung-Ho Lee , Sae-Young Kim
IPC分类号： H01L31/062 , H01L31/112 , H01L21/00
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14643 , H01L27/148 , H01L27/14818
摘要： An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.
摘要翻译：图像传感器包括基板，防反射板和遮光膜。衬底包括用于接收光的第一像素和第二像素以提供黑色电平补偿。第一像素形成在有源区域中，并且第二像素形成在与行方向上的有源区域间隔开的第一区域中。防反射板形成在衬底上方的第二区域中，并且第二区域在有源区域和第一区域之间。遮光膜形成在防反射板的上方，遮光膜覆盖包括第一和第二区域的光学黑色区域。因此，图像传感器可以用于CCD型图像传感器和CMOS型图像传感器中以提供稳定的黑色电平，从而提高显示图像的质量。

15. 发明申请

US20090160971A1 Image sensor with adjusted gains in active and black pixels 有权
标题翻译：有源和黑色像素调节增益的图像传感器
公开(公告)号：US20090160971A1
公开(公告)日：2009-06-25
申请号：US12291910
申请日：2008-11-14
申请人： Sang-Il Jung , Young-Hoon Park
发明人： Sang-Il Jung , Young-Hoon Park
IPC分类号： H04N5/235
CPC分类号： H01L27/14603
摘要： An image sensor includes an active pixel and a black pixel. The active pixel has a first signal gain and a first dark signal level, and the black pixel has a second signal gain and a second dark signal level. At least one of the first and second signal gains is adjusted such that the first and second dark signal levels are substantially equal for minimizing image defects in the image sensor.
摘要翻译：图像传感器包括有源像素和黑色像素。有源像素具有第一信号增益和第一暗信号电平，并且黑色像素具有第二信号增益和第二暗信号电平。调整第一和第二信号增益中的至少一个，使得第一和第二暗信号电平基本上相等以使图像传感器中的图像缺陷最小化。

16. 发明申请

US20090134433A1 Image sensor 审中-公开
标题翻译：图像传感器
公开(公告)号：US20090134433A1
公开(公告)日：2009-05-28
申请号：US12291650
申请日：2008-11-12
申请人： Sang-Il Jung
发明人： Sang-Il Jung
IPC分类号： H01L31/0232 , H01L29/66
CPC分类号： H01L27/14603 , H01L27/14609 , H04N5/361 , H04N5/374
摘要： An image sensor includes a substrate in which an active pixel region and an optical black region are defined, a plurality of active pixels in the active pixel region, each active pixel including a first charge-detection unit having a first conversion gain, and a plurality of black pixels in the optical black region, each black pixel including a second charge-detection unit having a second conversion gain.
摘要翻译：图像传感器包括其中限定有源像素区域和光学黑色区域的基板，有源像素区域中的多个有源像素，每个有源像素包括具有第一转换增益的第一电荷检测单元和多个在黑色区域中的黑色像素，每个黑色像素包括具有第二转换增益的第二电荷检测单元。

17. 发明申请

US20090108312A1 IMAGE SENSOR AND METHOD OF STABILIZING A BLACK LEVEL IN AN IMAGE SENSOR 有权
标题翻译：图像传感器和在图像传感器中稳定黑色电平的方法
公开(公告)号：US20090108312A1
公开(公告)日：2009-04-30
申请号：US12196491
申请日：2008-08-22
申请人： Yi-Tae Kim , Sang-Il Jung , Yun-Ho Jang , Kyung-Ho Lee , Sae-Young Kim
发明人： Yi-Tae Kim , Sang-Il Jung , Yun-Ho Jang , Kyung-Ho Lee , Sae-Young Kim
IPC分类号： H01L31/112 , H01L21/30
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14643 , H01L27/148 , H01L27/14818
摘要： An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.
摘要翻译：图像传感器包括基板，防反射板和遮光膜。衬底包括用于接收光的第一像素和第二像素以提供黑色电平补偿。第一像素形成在有源区域中，并且第二像素形成在与行方向上的有源区域间隔开的第一区域中。防反射板形成在衬底上方的第二区域中，并且第二区域在有源区域和第一区域之间。遮光膜形成在防反射板的上方，遮光膜覆盖包括第一和第二区域的光学黑色区域。因此，图像传感器可以用于CCD型图像传感器和CMOS型图像传感器中以提供稳定的黑色电平，从而提高显示图像的质量。

18. 发明申请

US20090008688A1 Unit pixels, image sensors and methods of manufacturing the same 审中-公开
标题翻译：单位像素，图像传感器及其制造方法
公开(公告)号：US20090008688A1
公开(公告)日：2009-01-08
申请号：US12213534
申请日：2008-06-20
申请人： Young-Hoon Park , Sang-Il Jung
发明人： Young-Hoon Park , Sang-Il Jung
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Unit pixels, image sensors and methods for fabricating the image sensor are provided. A unit pixel includes: a photodiode for accumulating photocharges; a floating diffusion region for detecting the photocharges accumulated in the photodiode; a reset element for periodically resetting the floating diffusion region; a drive element for amplifying the photocharges accumulated in the floating diffusion region; a selection element for selecting the unit pixel; and a silicide layer formed on top surfaces of the transfer gate. The photocharges are transferred to the floating diffusion region via a transfer gate.
摘要翻译：提供了用于制造图像传感器的单位像素，图像传感器和方法。单位像素包括：用于累积光电荷的光电二极管; 用于检测累积在光电二极管中的光电荷的浮动扩散区域; 用于周期性地重置浮动扩散区域的复位元件; 用于放大积聚在浮动扩散区域中的光电荷的驱动元件; 用于选择单位像素的选择元素; 以及形成在所述传输门的顶表面上的硅化物层。光电荷通过传输门传递到浮动扩散区。

19. 发明申请

US20080315273A1 IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20080315273A1
公开(公告)日：2008-12-25
申请号：US12208812
申请日：2008-09-11
申请人： SANG-IL JUNG
发明人： SANG-IL JUNG
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689
摘要： An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.

20. 发明授权

US07397100B2 Image sensor and method of manufacturing the same 有权
公开(公告)号：US07397100B2
公开(公告)日：2008-07-08
申请号：US11195133
申请日：2005-08-02
申请人： Sang-Il Jung
发明人： Sang-Il Jung
IPC分类号： H01L31/109 , H01L31/10
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689
摘要： An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.

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