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11. 发明授权

US4905245A Semiconductor laser device and method of manufacturing same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US4905245A
公开(公告)日：1990-02-27
申请号：US174743
申请日：1988-03-29
申请人： Johannes J. Ponjee , Rudolf P. Tijburg
发明人： Johannes J. Ponjee , Rudolf P. Tijburg
IPC分类号： H01L21/312 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/028
CPC分类号： H01L33/44 , H01S5/028 , H01S5/0283 , Y10S148/095 , Y10S148/125
摘要： The invention relates to a semiconductor laser device having a coating on surfaces of a semiconductor body intended for emanation of a laser beam. For protection of these surfaces against attack during operation of the laser this coating comprises a layer of a compound having at least one alkyl group.

12. 发明授权

US4558448A Semiconductor laser with end zones for reducing non-radiating recombination 失效
标题翻译：具有端部区域的半导体激光器，用于减少非辐射复合
公开(公告)号：US4558448A
公开(公告)日：1985-12-10
申请号：US412052
申请日：1982-08-27
申请人： Johannes A. dePoorter , Peter J. deWaard , Rudolf P. Tijburg , Gerardus L. Dinghs
发明人： Johannes A. dePoorter , Peter J. deWaard , Rudolf P. Tijburg , Gerardus L. Dinghs
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/22 , H01S3/19
CPC分类号： H01S5/20 , H01S5/162 , H01S5/2059 , H01S5/2202
摘要： A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.
摘要翻译：一种具有用作谐振器的镜面的半导体激光器，其中有源激光器区域包括邻近镜面的端部区域，其具有注入的离子，优选质子，具有相关的晶体损伤。端部区域的长度至少等于端部区域中的重组载流子的扩散长度。由于端部区域中的高复合率基本上在镜面上不发生非辐射复合，所以避免镜面侵蚀。

13. 发明授权

US4448635A Method of etching cavities and apertures in substrates and device for carrying out said method 失效
标题翻译：蚀刻基板中的空腔和孔的方法以及用于执行所述方法的装置
公开(公告)号：US4448635A
公开(公告)日：1984-05-15
申请号：US463761
申请日：1983-02-04
申请人： Hendrik K. Kuiken , Rudolf P. Tijburg
发明人： Hendrik K. Kuiken , Rudolf P. Tijburg
IPC分类号： H01L21/306 , C23F1/00 , C23F1/02 , B44C1/22 , C03C15/00
CPC分类号： C23F1/00 , C23F1/02
摘要： Deep cavities and apertures can be obtained with little undercutting (great etching factor) by etching in an artificial gravitational field (under the influence of centrifugal or centripetal forces).
摘要翻译：通过在人造重力场（在离心力或向心力的影响下）的蚀刻，可以获得较少的底切（较大的蚀刻因子）的深空腔和孔。

14. 发明授权

US4224101A Method of manufacturing semiconductor devices using laser beam cutting 失效
标题翻译：使用激光束切割制造半导体器件的方法
公开(公告)号：US4224101A
公开(公告)日：1980-09-23
申请号：US968643
申请日：1978-12-11
申请人： Rudolf P. Tijburg , Cornelus P. T. M. Damen
发明人： Rudolf P. Tijburg , Cornelus P. T. M. Damen
IPC分类号： B23K26/00 , H01L21/268 , H01L21/301 , H01L21/306 , H01L21/78
CPC分类号： H01L21/268 , H01L21/30604 , H01L21/30612 , H01L21/78 , Y10S148/028 , Y10S438/94 , Y10T225/12 , Y10T29/4979
摘要： A method of manufacturing semiconductor devices using laser beam cutting is disclosed in which the surface debris or pollution resulting from the laser beam cutting operation is removed by a preferential etching treatment. Since the polluting particles are of nonmonocrystalline semiconductor material, while the underlying material of the semiconductor disc is monocrystalline in nature, the polluting particles may be selectively removed in an effective manner by preferentially etching the nonmonocrystalline material of the particles with respect to the monocrystalline material of the disc. This preferential etching treatment may advantageously be carried out prior to the severing of the semiconductor disc to form the individual semiconductor devices.
摘要翻译：公开了使用激光束切割制造半导体器件的方法，其中通过优先蚀刻处理去除由激光切割操作产生的表面碎片或污染物。由于污染颗粒是非单晶半导体材料，而半导体盘的底层材料本质上是单晶的，所以污染颗粒可以通过优先蚀刻颗粒的非单晶材料相对于单晶材料的有效方式被有选择地去除光盘。该优选蚀刻处理可有利地在切断半导体盘之前进行以形成各个半导体器件。

15. 发明授权

US5756403A Method of preferentially etching a semiconductor substrate with respect to epitaxial layers 失效
标题翻译：相对于外延层优先蚀刻半导体衬底的方法
公开(公告)号：US5756403A
公开(公告)日：1998-05-26
申请号：US581233
申请日：1995-12-29
申请人： Rudolf P. Tijburg , Sharon J. Flamholtz , Kevin W. Haberern
发明人： Rudolf P. Tijburg , Sharon J. Flamholtz , Kevin W. Haberern
IPC分类号： C23F1/14 , H01L21/306 , H01L21/308 , H01L21/473 , H01L21/302
CPC分类号： H01L21/30612 , H01L21/473
摘要： An etching composition and method for its use in etching a semiconductor structure, the semiconductor structure comprising a substrate and one or more epitaxial layers. The etching composition comprises a solvent, an etchant, and first and second complexing agents, the etchant and complexing agents being soluble in the solvent. The etchant preferentially etches the substrate with respect to at least one epitaxial layer. The first complexing agent is reactive with the substrate so as to accelerate the rate at which the etchant etches the substrate. The second completing agent is reactive with a component of the at least one epitaxial layer so as to form a resulting compound with the component. This reaction establishes an equilibrium between the resulting compound, the second complexing agent and the component, the equilibrium precluding significant etching of the at least one epitaxial layer. The etching composition preferably comprises an agent which provides for adjusting the acidity of the solution, and thereby provides for adjusting the etch rate of the substrate while maintaining the composition's etching characteristics with respect to the at least one epitaxial layer.
摘要翻译：一种用于蚀刻半导体结构的蚀刻组合物和方法，所述半导体结构包括衬底和一个或多个外延层。蚀刻组合物包括溶剂，蚀刻剂和第一和第二络合剂，蚀刻剂和络合剂可溶于溶剂中。蚀刻剂相对于至少一个外延层优先蚀刻衬底。第一络合剂与衬底反应，以加速蚀刻剂蚀刻衬底的速率。第二完成剂与至少一个外延层的组分反应，以便与组分形成所得化合物。该反应在所得化合物，第二络合剂和组分之间建立平衡，排除了至少一个外延层的显着蚀刻的平衡。蚀刻组合物优选包含提供溶液酸度的调节剂，从而提供调整衬底的蚀刻速率，同时保持组合物相对于至少一个外延层的蚀刻特性。

16. 发明授权

US5578866A Method of manufacturing a block-shaped support body for a semiconductor component 失效
标题翻译：制造用于半导体部件的块状支撑体的方法
公开(公告)号：US5578866A
公开(公告)日：1996-11-26
申请号：US115335
申请日：1993-09-01
申请人： Johannes A. DePoorter , Rudolf P. Tijburg , Hermanus A. Van De Pas
发明人： Johannes A. DePoorter , Rudolf P. Tijburg , Hermanus A. Van De Pas
IPC分类号： H01L23/36 , H01L25/16 , H01L33/62 , H01L33/64 , H01S5/00 , H01S5/02 , H01L23/544
CPC分类号： H01L33/62 , H01L25/162 , H01S5/0201 , H01L2224/48091 , H01L2924/01014 , H01L2924/01078 , H01L2924/01079 , H01L2933/0033 , H01L33/642
摘要： In the known method, a plate of a heat-conducting material, for example silicon, is subdivided by means of grooves into blocks which remain connected to one another along break-off edges. The plate is metallized on two sides and (locally) provided with layer-shaped regions comprising solder at the upper side, the diode laser being fastened within each region, after which the blocks are separated from one another by breaking-off. A disadvantage of this method is that the blocks thus obtained are not suitable for a final mounting in which the radiation beam of the diode laser is perpendicular to the carrier plate on which the support body is fastened. In a method according to the invention, mutually parallel grooves are provided in the plate and the plate is subdivided into strips whose longitudinal direction is perpendicular to the direction of the grooves which are at most two support bodies wide and whose side surfaces are substantially smooth and flat, and the upper surface and the side surfaces of the strips are provided with a conductive layer in one step, after which the layer-shaped regions comprising solder are provided on one of these surfaces. This method is simple, comprises comparatively few steps, and results in a large number of interconnected support bodies which are suitable for mounting with the support body tilted through 90.degree.. This renders it possible to mount diode lasers on the support bodies before the latter are separated and to mount them finally relative to a carrier plate in such a way that the radiation beam is approximately perpendicular to the carrier plate. Preferably, strips having a width of exactly one support body are formed.
摘要翻译：在已知的方法中，导热材料（例如硅）的板通过凹槽细分成块，其沿断裂边保持彼此连接。板在两面金属化并且（局部地）设置有在上侧包括焊料的层状区域，二极管激光器被紧固在每个区域内，之后块通过断开彼此分离。该方法的缺点在于，如此获得的块不适用于其中二极管激光器的辐射束垂直于固定有支撑体的承载板的最终安装。在根据本发明的方法中，在板中设置相互平行的槽，并且板被细分成条，其长度方向垂直于至多两个支撑体宽度的槽的方向，并且其侧表面基本上平滑，平坦，并且条的上表面和侧表面在一个步骤中设置有导电层，之后在其中一个表面上设置包含焊料的层状区域。该方法简单，包括较少的步骤，并且导致大量互连的支撑体，其适用于支撑体倾斜90°的安装。这使得可以在支撑体分离之后将二极管激光器安装在支撑体上，并且最终相对于载板安装它们，使得辐射束大致垂直于载体板。优选地，形成具有正好一个支撑体的宽度的条带。

17. 发明授权

US5266518A Method of manufacturing a semiconductor body comprising a mesa 失效
标题翻译：制造包括台面的半导体主体的方法
公开(公告)号：US5266518A
公开(公告)日：1993-11-30
申请号：US576317
申请日：1990-08-29
申请人： Johannes J. M. Binsma , Rudolf P. Tijburg
发明人： Johannes J. M. Binsma , Rudolf P. Tijburg
IPC分类号： G02B6/13 , H01L21/20 , H01L21/306 , H01L21/3063 , H01L21/308 , H01L21/316 , H01L33/00 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , G02B6/131 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/30612 , H01L21/30635 , H01L21/3085 , H01L21/31654 , H01L33/0062 , H01S5/227 , H01S5/3434 , H01S5/2081 , H01S5/2275 , H01S5/32391 , H01S5/34306 , Y10S438/911 , Y10S438/978
摘要： In the method according to the invention, the upper and thicker of two semiconductor layers is etched by means of a selective and preferential etchant, substantially no underetching occurring with respect to the mask. Subsequently, the lower and thinner semiconductor layer and a part of the upper semiconductor layer are converted by a substantially non-selective anodic oxidation into semiconductor material oxides, which are removed by means of an etchant which is non-selective with respect to the oxides formed, but is selective with respect to the semiconductor materials. As a result, mesas are obtained having a substantially flat side wall, the lateral dimension of these mesas being accurately determined by the size of the mask. Thus, particularly favourable results are obtained, especially in the InP/InGaAsP material system. The method according to the invention can be used very advantageously when the thinner layer forms part of a so-called multilayer quantum well structure.

18. 发明授权

US4341010A Fabrication of electroluminescent semiconductor device utilizing selective etching and epitaxial deposition 失效
标题翻译：利用选择性蚀刻和外延沉积制造电致发光半导体器件
公开(公告)号：US4341010A
公开(公告)日：1982-07-27
申请号：US141511
申请日：1980-04-18
申请人： Rudolf P. Tijburg , Teunis van Dongen
发明人： Rudolf P. Tijburg , Teunis van Dongen
IPC分类号： H01L21/205 , H01L21/306 , H01L33/00 , H01L33/44 , H01S5/00 , H01S5/026 , H01L21/308 , H01L21/20
CPC分类号： H01L33/44 , H01L33/0025 , Y10S438/978
摘要： An electroluminescent semiconductor device such as a semiconductor laser has epitaxial monocrystalline layers (3 to 6), including an active layer (4), grown on a substrate (2). The epitaxial layers are etched in the presence of an etching mask (8) to form nonplanar mirror surfaces (9) which in the longitudinal direction bound active regions (10). To form flat and parallel mirrors (12) an epitaxial monocrystalline protective layer (11) is grown from the gaseous phase on the mirror surfaces after etching. The etching can be carried out in two stages using different etchants. With the first etchant the etched layers taken on a swallow-tail profile and then with the second etchant they take on a concave profile.
摘要翻译：诸如半导体激光器的电致发光半导体器件具有在衬底（2）上生长的包括活性层（4）的外延单晶层（3至6）。在存在蚀刻掩模（8）的情况下蚀刻外延层，以形成在纵向方向上结合有源区域（10）的非平面镜面（9）。为了形成平坦和平行的反射镜（12），在蚀刻之后，从镜面上的气相生长外延单晶保护层（11）。蚀刻可以使用不同的蚀刻剂在两个阶段中进行。使用第一蚀刻剂，将蚀刻层置于燕尾型材上，然后用第二蚀刻剂将其取为凹形轮廓。

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