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11. 发明授权

US5905611A Thin film magnetic head responsive to spin-dependent scattering 失效
标题翻译：薄膜磁头响应于自旋依赖散射
公开(公告)号：US5905611A
公开(公告)日：1999-05-18
申请号：US848733
申请日：1997-05-22
申请人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
发明人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
IPC分类号： G11B5/00 , G11B5/127 , G11B5/31 , G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3903 , G11B5/3912 , G11B5/3919 , G11B5/399 , G11B2005/0016 , G11B2005/0018 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , G11B5/3967 , Y10T29/49025
摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field extends in a direction same as that of the signal magnetic field.
摘要翻译：本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上响应信号磁场，不超过引线之间的距离。本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个基本上响应于信号磁场的一个磁性膜的部分在与信号磁场的方向相同的方向上延伸。

12. 发明授权

US5780176A Magnetoresistance effect element 失效
公开(公告)号：US5780176A
公开(公告)日：1998-07-14
申请号：US672912
申请日：1996-06-28
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

13. 发明授权

US5725963A Magnetoresistance effect element 失效
公开(公告)号：US5725963A
公开(公告)日：1998-03-10
申请号：US652849
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

14. 发明授权

US5698335A Magnetoresistance effect element having bias films 失效
标题翻译：具有偏置膜的磁阻效应元件
公开(公告)号：US5698335A
公开(公告)日：1997-12-16
申请号：US652843
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜，铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

15. 发明授权

US5702832A Magnetoresistance effect element 失效
公开(公告)号：US5702832A
公开(公告)日：1997-12-30
申请号：US652850
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66 , B32B15/01
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

16. 发明授权

US5688605A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5688605A
公开(公告)日：1997-11-18
申请号：US652796
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜，铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

17. 发明授权

US06483673B1 Differential detection magnetoresistance head with laminated structure 失效
标题翻译：差分检测磁阻头与层叠结构
公开(公告)号：US06483673B1
公开(公告)日：2002-11-19
申请号：US09085101
申请日：1998-05-28
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译： GMR元件部分由层叠结构形成，该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成，该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构，该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头，用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。将使用粒状铁磁中间层作为GMR元件部分。

18. 发明授权

US06395388B1 Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06395388B1
公开(公告)日：2002-05-28
申请号：US09442032
申请日：1999-11-17
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , E05B17/2007 , E05B67/36 , E05C1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T70/498 , Y10T70/5319 , Y10T292/1025 , Y10T428/11 , Y10T428/1107 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
摘要翻译：本发明提供一种交换耦合膜，其具有由由Fe，Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构，其中由铁磁材料制成的交换耦合膜，在铁磁膜和反铁磁膜之间的界面处设置元件，以改善晶格匹配，这导致交换耦合力的增强，以及包括如上所述的这种交换耦合膜的磁电阻效应元件以及用于向构成交换耦合膜的铁磁膜提供电流的电极。

19. 发明授权

US06327121B1 GMR head, method for its manufacture, and magnetic disc drive utilizing the head 失效
标题翻译： GMR头，其制造方法和利用磁头的磁盘驱动器
公开(公告)号：US06327121B1
公开(公告)日：2001-12-04
申请号：US09191940
申请日：1998-11-13
申请人： Keiichi Nagasawa , Yutaka Shimizu , Hitoshi Kishi , Atsushi Tanaka , Reiko Kondoh
发明人： Keiichi Nagasawa , Yutaka Shimizu , Hitoshi Kishi , Atsushi Tanaka , Reiko Kondoh
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3929 , G11B5/3945 , G11B2005/3996 , Y10S977/934
摘要： The invention provides a GMR head in which an adequate bias point may be set for the free magnetic layer 12 of the GMR head by suppressing the static magnetic field in the free magnetic layer which arises from a pinned magnetic layer 14 of the GMR head. The GMR head comprises a sensor section 10, a magnetic field correction section 20 disposed laterally adjacent to the sensor section 10. The sensor section 10 includes, in addition to the free magnetic layer 12 and the pinned magnetic layer 14, an intermediate layer 13 and an anti-ferromagnetic layer 15 in a specific arrangement. The magnetic field correction section 20 may have the same structure as the sensor section 10. Because the sensor section 10 and the magnetic field correction section 20 are provided independently and disposed laterally adjacent to each other in the direction of height of the GMR head, the magnetic field emerging from the pinned magnetic layer 14 into the free magnetic layer 12 is suppressed by the magnetic field correction section 20. The magnetic field correction section 20 may be easily formed together and simultaneously with the sensor section 10.
摘要翻译：本发明提供一种GMR头，其中可以通过抑制由GMR头的钉扎磁性层14产生的自由磁性层中的静态磁场，为GMR头的自由磁性层12设置适当的偏置点。 GMR头包括传感器部分10，与传感器部分10相邻设置的磁场校正部分20.传感器部分10除了自由磁性层12和固定磁性层14之外还包括中间层13和具有特定布置的反铁磁层15。磁场校正部20可以具有与传感器部10相同的结构。由于传感器部10和磁场校正部20独立地设置并且在GMR头的高度方向上彼此横向相邻设置，通过磁场校正部20抑制从被钉扎磁性层14向自由磁性层12出射的磁场。磁场校正部20可以容易地与传感器部10一起形成。

20. 发明授权

US5738946A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US5738946A
公开(公告)日：1998-04-14
申请号：US652784
申请日：1996-05-23
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10S428/928 , Y10T428/1121 , Y10T428/12465 , Y10T428/12493 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/1275 , Y10T428/12806 , Y10T428/12854 , Y10T428/12861 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12931
摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
摘要翻译：本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。本发明提供一种磁电阻效应元件，其包括：通过依次层叠含有选自Co，Fe和Ni中的至少一种元素作为其主要成分的铁磁性膜，形成在基板上的非磁性膜，和铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

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