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11. 发明申请

US20110297992A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20110297992A1
公开(公告)日：2011-12-08
申请号：US13213988
申请日：2011-08-19
申请人： Pun Jae CHOI , Ki Yeol Park , Sang Bum LEE , Seon Young MYOUNG , Myong Soo CHO
发明人： Pun Jae CHOI , Ki Yeol Park , Sang Bum LEE , Seon Young MYOUNG , Myong Soo CHO
IPC分类号： H01L33/60
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

12. 发明申请

US20110215290A1 ANTI-REFLECTED HIGH EFFICIENCY LIGHT EMITTING DIODE DEVICE 审中-公开
标题翻译：防反射的高效发光二极管器件
公开(公告)号：US20110215290A1
公开(公告)日：2011-09-08
申请号：US10593088
申请日：2005-01-07
申请人： Pun-Jae Choi , Jin-Soo Park , Seong-Han Kim , Myeong-Kook Gong , Hyeon-Ryong Cho
发明人： Pun-Jae Choi , Jin-Soo Park , Seong-Han Kim , Myeong-Kook Gong , Hyeon-Ryong Cho
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/22
摘要： The present invention is related to a light emitting diode device in which a fine prominence and depression is formed on a semiconductor layer to make an anti-reflection region. The light emitting diode device comprises, a substrate; a N-type semi-conductor layer; an active layer for generating light; P-type semiconductor layer; a first exposed region formed by etching the active layer and the P-type semiconductor layer to partly expose the N-type semiconductor layer; a first ohmic contact formed on the first exposed layer; a second ohmic contact formed on the P-type semiconductor layer, and having an opening to partly form a second exposed region on the P-type semiconductor layer, said second exposed layer being formed to partly have a ultra-fine prominence and depression.
摘要翻译：本发明涉及一种发光二极管器件，其中在半导体层上形成精细突起和凹陷以形成抗反射区域。发光二极管装置包括：基板; N型半导体层; 用于产生光的有源层; P型半导体层; 通过蚀刻有源层和P型半导体层以部分地暴露N型半导体层而形成的第一曝光区域; 形成在第一暴露层上的第一欧姆接触; 形成在所述P型半导体层上的第二欧姆接触，并且具有在所述P型半导体层上部分地形成第二暴露区域的开口，所述第二暴露层形成为部分地具有超细突出和凹陷。

13. 发明授权

US07884377B2 Light emitting device, method of manufacturing the same and monolithic light emitting diode array 有权
标题翻译：发光器件及其制造方法和单片发光二极管阵列
公开(公告)号：US07884377B2
公开(公告)日：2011-02-08
申请号：US12725970
申请日：2010-03-17
申请人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.
摘要翻译：一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

14. 发明授权

US07795054B2 Vertical structure LED device and method of manufacturing the same 有权
标题翻译：垂直结构LED装置及其制造方法
公开(公告)号：US07795054B2
公开(公告)日：2010-09-14
申请号：US11987712
申请日：2007-12-04
申请人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
IPC分类号： H01L21/00 , H01L21/50 , H01L21/48 , H01L21/44
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译：一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层成长将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来金属接合层与接合界面接触。

15. 发明申请

US20100193828A1 LIGHT EMITTING DEVICE AND PACKAGE HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的包装
公开(公告)号：US20100193828A1
公开(公告)日：2010-08-05
申请号：US12756824
申请日：2010-04-08
申请人： Pun Jae CHOI , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
发明人： Pun Jae CHOI , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
IPC分类号： H01L33/62
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/08 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
摘要翻译：提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产。根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

16. 发明授权

US07601621B2 Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode 有权
标题翻译：形成表面凹凸的方法和制造氮化镓基发光二极管的方法
公开(公告)号：US07601621B2
公开(公告)日：2009-10-13
申请号：US11798083
申请日：2007-05-10
申请人： Pun Jae Choi , Masayoshi Koike , Lee Jong Ho
发明人： Pun Jae Choi , Masayoshi Koike , Lee Jong Ho
IPC分类号： H01L21/265
CPC分类号： H01L33/22 , H01L33/32
摘要： A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mask as an etching mask. The wet-etching of the GaN substrate is performed until the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface.
摘要翻译：形成表面凹凸的方法包括制备GaN衬底; 在所述GaN衬底的表面上形成掩模，所述掩模限定表面不规则形成区域; 以及通过使用掩模作为蚀刻掩模将GaN衬底的表面的湿蚀刻部分。执行GaN衬底的湿蚀刻，直到通过使用掩模的湿蚀刻形成的GaN衬底的一个表面的端部与通过湿蚀刻形成的GaN衬底的另一表面的端部相接合，使用该掩模，另一个表面与该表面相邻。

17. 发明申请

US20080230789A1 Light emitting device, method of manufacturing the same and monolithic light emitting diode array 有权
标题翻译：发光器件及其制造方法和单片发光二极管阵列
公开(公告)号：US20080230789A1
公开(公告)日：2008-09-25
申请号：US12071544
申请日：2008-02-22
申请人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.
摘要翻译：一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

18. 发明申请

US20160064611A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20160064611A1
公开(公告)日：2016-03-03
申请号：US14717942
申请日：2015-05-20
申请人： Pun Jae CHOI , Young Soo PARK , Yung Ho RYU , Tae Young PARK , Jin Gi HONG
发明人： Pun Jae CHOI , Young Soo PARK , Yung Ho RYU , Tae Young PARK , Jin Gi HONG
IPC分类号： H01L33/38 , H01L33/40 , H01L33/62 , H01L33/42
CPC分类号： H01L33/382 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/16225 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2924/00014
摘要： A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.
摘要翻译：半导体发光器件包括具有彼此相对的第一表面和第二表面的层压半导体结构，分别形成第一表面和第二表面的第一导电类型半导体层和第二导电型半导体层，活动层第一和第二电极分别设置在叠层半导体结构的第一表面和层叠半导体结构的第二表面上。连接电极延伸到要连接到第二电极的第一表面。支撑基板设置在第二电极上，并且绝缘层使连接电极与有源层和第一导电型半导体层绝缘。

19. 发明授权

US08963175B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08963175B2
公开(公告)日：2015-02-24
申请号：US12266300
申请日：2008-11-06
申请人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L33/36 , H01L27/15 , H01L33/38 , H01L33/08 , H01L33/20
CPC分类号： H01L27/156 , H01L33/08 , H01L33/20 , H01L33/385
摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

20. 发明授权

US08624276B2 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US08624276B2
公开(公告)日：2014-01-07
申请号：US13568553
申请日：2012-08-07
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L29/20
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

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