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11. 发明申请

US20030104142A1 Vacuum arc vapor deposition process and apparatus 失效
标题翻译：真空电弧气相沉积工艺及装置
公开(公告)号：US20030104142A1
公开(公告)日：2003-06-05
申请号：US10305008
申请日：2002-11-27
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Yasuo Murakami , Takashi Mikami , Kiyoshi Ogata , Hiroshi Murakami
IPC分类号： C23C016/00
CPC分类号： H01J37/32055 , C23C14/325 , H01J2237/022
摘要： To prevent the film forming characteristic deterioration by a magnetic field of a magnetic filter to thereby make vacuum arc vapor deposition uniform, in the invention, plurality of magnets includes a terminal magnet closest to a plasma injection hole located at the other end of duct and specified magnets. The terminal magnet located closest to plasma injection hole may be set to incline to a plasma injection plane of the plasma injection hole. Further, at lease one of specified magnets may be inclined to the plasma injection plane. Further more, at least one of magnetic field generating coils may be formed with a plurality of electromagnetic coils, which are inclined at different angles with respect to a cross section of the duct. One of electromagnetic coils may be selectively energized by current on a basis of setting and controlling of deflection magnetic field generated by the magnetic filter.
摘要翻译：为了防止由磁性过滤器的磁场引起的成膜特性劣化，从而使真空电弧蒸镀均匀，在本发明中，多个磁体包括最靠近位于管道另一端的等离子体注入孔的端子磁体，磁铁。最靠近等离子体注入孔的端子磁体可被设定为等离子体注入孔的等离子体注入平面。此外，指定磁体中的至少一个可以倾斜于等离子体注入平面。此外，至少一个磁场产生线圈可以形成有多个电磁线圈，它们相对于管道的横截面以不同的角度倾斜。电磁线圈中的一个可以在基于由磁性过滤器产生的偏转磁场的设定和控制的基础上由电流选择性地激励。

12. 发明申请

US20030072122A1 Method and apparatus for holding a substrate 审中-公开
标题翻译：用于保持基板的方法和装置
公开(公告)号：US20030072122A1
公开(公告)日：2003-04-17
申请号：US10235804
申请日：2002-09-06
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Shuya Ishida
IPC分类号： H01H001/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： A substrate holding apparatus includes an electrostatic chuck for electrostatically chucking and holding a substrate, an chucking power supply for applying a DC chucking voltage to the electrostatic chuck, a chuck drive device for mechanically driving the electrostatic chuck, and a drive control unit for controlling the chuck drive device by applying command information. The apparatus further includes a chucking control unit which compute the accelerations at each time point that the substrate being held undergoes when the electrostatic chuck is mechanically moved, according to the command information which is applied from the drive control unit to the chuck drive device, computes an chucking force required for holding the substrate at each time point by using the accelerations thus computed, and varies an chucking voltage output from the chucking power supply according to the computed chucking force so that the electrostatic chuck generates the computed chucking force.
摘要翻译：基板保持装置包括用于静电夹持和保持基板的静电卡盘，用于向静电卡盘施加DC夹持电压的卡盘电源，用于机械驱动静电卡盘的卡盘驱动装置和用于控制静电卡盘的驱动控制单元卡盘驱动装置通过应用命令信息。该装置还包括：卡盘控制单元，根据从驱动控制单元向卡盘驱动装置施加的命令信息，计算当静电卡盘被机械移动时保持的基板经历的每个时间点的加速度，计算通过使用这样计算的加速度在每个时间点保持基板所需的夹持力，并且根据计算出的夹紧力改变从卡盘电源输出的夹持电压，使得静电卡盘产生计算出的夹紧力。

13. 发明申请

US20020126517A1 DC-DC converter and bi-directional DC-DC converter and method of controlling the same 失效
标题翻译： DC-DC转换器和双向DC-DC转换器及其控制方法
公开(公告)号：US20020126517A1
公开(公告)日：2002-09-12
申请号：US10052414
申请日：2002-01-23
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Mitsuru Matsukawa , Nobuhiro Kurio , Hitoshi Nakagaki , Takaya Hasebe
IPC分类号： H02M001/00
CPC分类号： H02M3/33584 , H02M3/33569 , H02M2001/0074
摘要： A DC-DC converter has converter circuit portions 11 and 12, transformers Tr1 and T r2, and rectifier circuit portions 21 and 22. Two sets of converter circuit portions 11 and 12 respectively include two pairs of switching elements Q1 to Q4, and two pairs of switching elements Q5 to Q8 connected in full bridge configuration, series capacitors C1 and C2 are inserted and connected between the converter circuit portions 11 and 12 and the transformers Tr1 and Tr2 respectively. The switching phase of one switching element Q4 or Q8 is shifted by a 1/3n period from the switching phase of the other switching element Q1 or Q5 in the pair of switching elements. The switching phases of corresponding switching elements Q1 and Q5 in the converter circuit portions 11 and 12 are shifted by a 1/2n period from each other.
摘要翻译： DC-DC转换器具有转换器电路部分11和12，变压器Tr1和Tr2以及整流电路部分21和22.两组转换器电路部分11和12分别包括两对开关元件Q1至Q4，并且两对以全桥结构连接的开关元件Q5至Q8，串联电容器C1和C2分别插入并连接在转换器电路部分11和12以及变压器Tr1和Tr2之间。一个开关元件Q4或Q8的开关相位从一对开关元件中的另一个开关元件Q1或Q5的开关相位移位1 / 3n。转换器电路部分11和12中对应的开关元件Q1和Q5的开关相位彼此移位1 / 2n周期。

14. 发明申请

US20020074226A1 Film forming apparatus 失效
标题翻译：成膜装置
公开(公告)号：US20020074226A1
公开(公告)日：2002-06-20
申请号：US09968016
申请日：2001-10-02
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Hiroshi Murakami , Takashi Mikami
IPC分类号： C23C014/00
CPC分类号： H01J37/32055 , H01J37/32871 , H01J2237/022
摘要： The vacuum arc evaporation apparatus removes coarse particles from plasma containing cathode materials generated from a cathode 7 provided to a evaporation source 6 by a vacuum arc discharge, and is provided with a porous member 10 on the inside wall of a plasma duct equipped with means for forming deflection magnetic field having a magnetic coil 8 outside thereof so as to guide the plasma in the vicinity of a substrate 11 accommodated in the film forming chamber 1.
摘要翻译：真空电弧蒸发装置通过真空电弧放电从设置到蒸发源6的阴极7产生的含有阴极材料的等离子体中除去粗颗粒，并且在等离子体管的内壁上设置有多孔构件10，该等离子体管装备有用于在其外侧形成具有电磁线圈8的偏转磁场，以引导容纳在成膜室1中的基板11附近的等离子体。

15. 发明申请

US20020056814A1 Method and device for irradiating an ion beam, and related method and device thereof 失效
标题翻译：用于照射离子束的方法和装置及其相关方法和装置
公开(公告)号：US20020056814A1
公开(公告)日：2002-05-16
申请号：US09987112
申请日：2001-11-13
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Shigeki Sakai , Tadashi Ikejiri
IPC分类号： H01L021/66 , H01L021/42
CPC分类号： H01J37/026 , H01J2237/004 , H01J2237/31701 , H01L21/2236
摘要： When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the substrate 2 to suppress electric charging on a substrate surface caused by ion beam irradiation. A ratio of IE/IB is kept at a value not lower than 1.8, a ratio of II /IE is kept at a value not lower than 0.07 and not higher than 0.7, wherein IB is an electric current of the ion beam 14 irradiated onto the substrate 2, II is an ion current expressing a quantity of ions in the plasma 30 emitted from the plasma generating device 20, and IE is an electron current expressing a quantity of electrons in the plasma 30.
摘要翻译：当将离子束14照射到基板2上以进行离子注入等处理时，从等离子体发生装置20发射的等离子体30被供给到靠近基板2的部分，以抑制由离子束照射引起的基板表面的电荷。 IE / IB的比率保持在不低于1.8的值，II / IE的比率保持在不低于0.07且不高于0.7的值，其中IB是照射到衬底2，II是表示从等离子体产生装置20发射的等离子体30中的离子量的离子电流，IE是表示等离子体30中的电子量的电子电流。

16. 发明申请

US20020056342A1 Apparatus and method for generating indium ion beam 失效
公开(公告)号：US20020056342A1
公开(公告)日：2002-05-16
申请号：US09986624
申请日：2001-11-09
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Takatoshi Yamashita
IPC分类号： C22B004/08
CPC分类号： C22B58/00 , C22B4/005 , C22B4/08 , C23C14/221 , C23C14/243
摘要： An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600null C. to lower than 1170null C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3-x (x is 1, 2 or 3) may be used.

17. 发明申请

US20010033473A1 Nonflammable and disaster prevention type capacitor 审中-公开
标题翻译：不可燃和防灾型电容器
公开(公告)号：US20010033473A1
公开(公告)日：2001-10-25
申请号：US09824737
申请日：2001-04-04
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Satoru Itahashi , Masaru Kamba , Yoshihisa Tanaka
IPC分类号： H01G004/00
CPC分类号： H01G2/14
摘要： In a nonflammable and disaster prevention type capacitor, the sealing property of the capacitor container is increased, a plurality of capacitor elements are collected, is accommodated in the container, and its inside is vacuum deaerated, the perfluorocarbon liquid deaerated by a deaeration apparatus is filled, and a capacitor which maintains an amount of residual air in the perfluorocarbon liquid to be not larger than 5%, is formed. A fluoride liquid to be filled in the container, consisting of a connection of carbon, fluorine and oxygen, and which includes per fluoropolyether by not smaller than 90% and whose boiling point is not lower than 120null C. and not higher than 270null C., and whose dynamic viscosity at 25null C. is from 0.9 mm2/s to not larger than 14 mm2/s, is impregnated into the capacitor element. An absolute pressure in the container is not smaller than 120 kPa and not larger than 300 kPa.
摘要翻译：在不易燃防灾型电容器中，电容器容器的密封性能增加，多个电容器元件被收集在容器中，其内部被真空脱气，填充了由脱气装置脱气的全氟化碳液体并且形成将全氟化碳液体中的残留空气量维持在5％以下的电容器。填充在容器中的氟化物液体，其由碳，氟和氧的连接构成，并且其包含全氟聚醚不低于90％且沸点不低于120℃且不高于270° 并且其在25℃下的动态粘度为0.9mm 2 / s至不大于14mm 2 / s，被浸渍到电容器元件中。容器内的绝对压力不小于120kPa且不大于300kPa。

18. 发明授权

US3517263A Capacitor voltage transeormer 失效
标题翻译：电容式电压调节器
公开(公告)号：US3517263A
公开(公告)日：1970-06-23
申请号：US3517263D
申请日：1967-05-31
申请人： NISSIN ELECTRIC CO LTD
发明人： OKAMURA TOSHIO , IZUMI SIGEVA , WATANABE ISAO
IPC分类号： H02H7/05 , H02H7/00 , H02H7/14 , H02H7/16
CPC分类号： H02H7/05

19. 发明授权

US11417752B2 Method for producing thin film transistor 有权
公开(公告)号：US11417752B2
公开(公告)日：2022-08-16
申请号：US16619943
申请日：2018-06-07
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Daisuke Matsuo , Yasunori Ando , Yoshitaka Setoguchi , Shigeaki Kishida
IPC分类号： H01L29/66 , C23C14/08 , C23C14/34
摘要： Provided is a method for producing a thin film transistor that has a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode on a substrate. This method for producing a thin film transistor includes a step for forming the oxide semiconductor layer on the gate insulating layer by performing sputtering on a target with plasma. The step for forming the oxide semiconductor layer includes: a first film formation step in which only argon is supplied as a sputtering gas to perform sputtering; and a second film formation step in which a mixed gas of argon and oxygen is supplied as the sputtering gas to perform sputtering. A bias voltage applied to the target is a negative voltage of −1 kV or higher.

20. 发明授权

US11289314B2 Sputtering device 有权
公开(公告)号：US11289314B2
公开(公告)日：2022-03-29
申请号：US16494773
申请日：2018-03-14
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Shigeaki Kishida , Daisuke Matsuo
IPC分类号： H01J37/34 , C23C14/34 , C23C14/50
摘要： The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

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