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11. 发明申请

US20100244015A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20100244015A1
公开(公告)日：2010-09-30
申请号：US12797021
申请日：2010-06-09
申请人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
发明人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
IPC分类号： H01L51/10 , H01L51/40 , H01L33/00 , H01L51/50
CPC分类号： H01L51/0541 , H01L27/3244
摘要： A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate; a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
摘要翻译：本发明的主要目的在于提供一种有机半导体器件，其具有晶体管性能良好的有机半导体晶体管，能够高生产率地生产。为了实现该目的，本发明提供了一种有机半导体器件，包括：衬底; 源电极和漏电极，形成在基板上; 绝缘分隔部分，形成在由绝缘材料制成的源电极和漏极上，形成为绝缘分隔部的开口部设置在由源电极和漏极形成的沟道区的上方，并具有作为层间绝缘层的功能; 有机半导体层，形成在绝缘分隔部分的开口部分中，并且在源电极和漏电极上形成，并由有机半导体材料制成; 栅极绝缘层，其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极，其中; 绝缘分隔部的高度为0.1μm〜1.5μm。

12. 发明申请

US20080128685A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20080128685A1
公开(公告)日：2008-06-05
申请号：US11855295
申请日：2007-09-14
申请人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
发明人： Hiroyuki HONDA , Masanao MATSUOKA , Mitsutaka NAGAE , Hironori KOBAYASHI
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0541 , H01L27/3244
摘要： A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate, a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
摘要翻译：本发明的主要目的在于提供一种有机半导体器件，其具有晶体管性能良好的有机半导体晶体管，能够高生产率地生产。为了实现该目的，本发明提供了一种有机半导体器件，其包括：在基板上形成的基板，源电极和漏电极; 绝缘分隔部分，形成在由绝缘材料制成的源电极和漏极上，形成为绝缘分隔部的开口部设置在由源电极和漏极形成的沟道区的上方，并具有作为层间绝缘层的功能; 有机半导体层，形成在绝缘分隔部分的开口部分中，并且在源电极和漏电极上形成，并由有机半导体材料制成; 栅极绝缘层，其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极，其中; 绝缘分隔部的高度为0.1〜1.5μm。

13. 发明申请

US20100224869A1 ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR STRUCTURE AND ORGANIC SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：有机半导体材料，有机半导体结构和有机半导体器件
公开(公告)号：US20100224869A1
公开(公告)日：2010-09-09
申请号：US12782046
申请日：2010-05-18
申请人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
发明人： Ken Tomino , Shigeru Sugawara , Hiroki Maeda , Masanao Matsuoka
IPC分类号： H01L51/10 , C07D409/14
CPC分类号： H01L51/0068 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.
摘要翻译：本发明涉及提供一种在成膜环境下高度稳定的液晶有机半导体材料，同时可以容易地通过涂布形成膜。液晶有机半导体材料包括：包含彼此线性连接的3至6个噻吩的噻吩骨架; 和位于噻吩骨架两侧的碳原子数为1〜20的相同的烷基，其中分别引入了噻吩骨架和烷基之间的乙炔骨架，或者将乙炔骨架对称引入到噻吩骨架中。

14. 发明申请

US20080119010A1 MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE 有权
标题翻译：有机半导体器件的制造方法
公开(公告)号：US20080119010A1
公开(公告)日：2008-05-22
申请号：US11855271
申请日：2007-09-14
申请人： Mitsutaka NAGAE , Hironori KOBAYASHI , Masanao MATSUOKA , Hiroyuki HONDA
发明人： Mitsutaka NAGAE , Hironori KOBAYASHI , Masanao MATSUOKA , Hiroyuki HONDA
IPC分类号： H01L51/40
CPC分类号： H01L51/0018 , H01L51/0003 , H01L51/0541
摘要： A main object of the present invention is to provide a manufacturing method of an organic semiconductor device, wherein the method enabling an organic semiconductor layer to be patterned simply with high productivity and also enabling an organic semiconductor device having an organic semiconductor transistor to be produced with high productivity. To attain the problem, the present invention provides a manufacturing method of an organic semiconductor device comprising an organic semiconductor transistor formation process, wherein the process includes: an organic semiconductor layer formation step of using a substrate to form an organic semiconductor layer made of an organic semiconductor material on the substrate; a passivation layer formation step of forming pattern-wise on the organic semiconductor layer a passivation layer having an ability of shielding vacuum ultraviolet light; and an organic semiconductor layer patterning step of irradiating vacuum ultraviolet light to the passivation layer and to the organic semiconductor layer to etch the organic semiconductor layer corresponding to a part where the passivation layer is not formed.
摘要翻译：本发明的主要目的在于提供一种有机半导体器件的制造方法，其中使得有机半导体层能够以高生产率简单地进行构图，并且还能够使具有有机半导体晶体管的有机半导体器件与生产力高。为了解决这个问题，本发明提供了一种包括有机半导体晶体管形成工艺的有机半导体器件的制造方法，其中所述工艺包括：有机半导体层形成步骤，使用衬底形成由有机半导体制成的有机半导体层衬底上的半导体材料; 钝化层形成步骤，在有机半导体层上以图形方式形成具有屏蔽真空紫外光的能力的钝化层; 以及向钝化层和有机半导体层照射真空紫外光以蚀刻与未形成钝化层的部分相对应的有机半导体层的有机半导体层图案形成步骤。

15. 发明申请

US20080093594A1 ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY 审中-公开
标题翻译：有机半导体器件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：US20080093594A1
公开(公告)日：2008-04-24
申请号：US11855308
申请日：2007-09-14
申请人： Hiroyuki HONDA , Hironori KOBAYASHI , Masanao MATSUOKA , Mitsutaka NAGAE
发明人： Hiroyuki HONDA , Hironori KOBAYASHI , Masanao MATSUOKA , Mitsutaka NAGAE
IPC分类号： H01L51/10 , H01L51/48
CPC分类号： H01L51/105 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： The present invention mainly intends to provide an organic semiconductor device having an organic semiconductor transistor reduced in off current. In order to achieve the object, the present invention provides an organic semiconductor device comprising a substrate and an organic semiconductor transistor provided with a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes which are porous bodies and are formed on the gate insulation layer and an organic semiconductor layer which is made of an organic semiconductor material and formed only between the source and drain electrodes.
摘要翻译：本发明主要提供一种有机半导体晶体管的截止电流减小的有机半导体器件。为了实现该目的，本发明提供一种有机半导体器件，其包括基板和设置有形成在基板上的栅电极的有机半导体晶体管，形成在栅电极上的栅极绝缘层，多孔的源极和漏极形成在栅极绝缘层上，并形成有机半导体层，该有机半导体层由有机半导体材料制成，仅在源极和漏极之间形成。

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