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    • 2. 发明申请
    • MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE
    • 有机半导体器件的制造方法
    • US20080119010A1
    • 2008-05-22
    • US11855271
    • 2007-09-14
    • Mitsutaka NAGAEHironori KOBAYASHIMasanao MATSUOKAHiroyuki HONDA
    • Mitsutaka NAGAEHironori KOBAYASHIMasanao MATSUOKAHiroyuki HONDA
    • H01L51/40
    • H01L51/0018H01L51/0003H01L51/0541
    • A main object of the present invention is to provide a manufacturing method of an organic semiconductor device, wherein the method enabling an organic semiconductor layer to be patterned simply with high productivity and also enabling an organic semiconductor device having an organic semiconductor transistor to be produced with high productivity. To attain the problem, the present invention provides a manufacturing method of an organic semiconductor device comprising an organic semiconductor transistor formation process, wherein the process includes: an organic semiconductor layer formation step of using a substrate to form an organic semiconductor layer made of an organic semiconductor material on the substrate; a passivation layer formation step of forming pattern-wise on the organic semiconductor layer a passivation layer having an ability of shielding vacuum ultraviolet light; and an organic semiconductor layer patterning step of irradiating vacuum ultraviolet light to the passivation layer and to the organic semiconductor layer to etch the organic semiconductor layer corresponding to a part where the passivation layer is not formed.
    • 本发明的主要目的在于提供一种有机半导体器件的制造方法,其中使得有机半导体层能够以高生产率简单地进行构图,并且还能够使具有有机半导体晶体管的有机半导体器件与 生产力高。 为了解决这个问题,本发明提供了一种包括有机半导体晶体管形成工艺的有机半导体器件的制造方法,其中所述工艺包括:有机半导体层形成步骤,使用衬底形成由有机半导体制成的有机半导体层 衬底上的半导体材料; 钝化层形成步骤,在有机半导体层上以图形方式形成具有屏蔽真空紫外光的能力的钝化层; 以及向钝化层和有机半导体层照射真空紫外光以蚀刻与未形成钝化层的部分相对应的有机半导体层的有机半导体层图案形成步骤。
    • 4. 发明申请
    • ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY
    • 有机半导体器件,其制造方法,有机晶体管阵列和显示器
    • US20100244015A1
    • 2010-09-30
    • US12797021
    • 2010-06-09
    • Hiroyuki HONDAMasanao MATSUOKAMitsutaka NAGAEHironori KOBAYASHI
    • Hiroyuki HONDAMasanao MATSUOKAMitsutaka NAGAEHironori KOBAYASHI
    • H01L51/10H01L51/40H01L33/00H01L51/50
    • H01L51/0541H01L27/3244
    • A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate; a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
    • 本发明的主要目的在于提供一种有机半导体器件,其具有晶体管性能良好的有机半导体晶体管,能够高生产率地生产。 为了实现该目的,本发明提供了一种有机半导体器件,包括:衬底; 源电极和漏电极,形成在基板上; 绝缘分隔部分,形成在由绝缘材料制成的源电极和漏极上,形成为绝缘分隔部的开口部设置在由源电极和漏极形成的沟道区的上方,并具有 作为层间绝缘层的功能; 有机半导体层,形成在绝缘分隔部分的开口部分中,并且在源电极和漏电极上形成,并由有机半导体材料制成; 栅极绝缘层,其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极,其中; 绝缘分隔部的高度为0.1μm〜1.5μm。
    • 5. 发明申请
    • ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY
    • 有机半导体器件,其制造方法,有机晶体管阵列和显示器
    • US20080128685A1
    • 2008-06-05
    • US11855295
    • 2007-09-14
    • Hiroyuki HONDAMasanao MATSUOKAMitsutaka NAGAEHironori KOBAYASHI
    • Hiroyuki HONDAMasanao MATSUOKAMitsutaka NAGAEHironori KOBAYASHI
    • H01L51/05H01L51/40
    • H01L51/0541H01L27/3244
    • A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate, a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.
    • 本发明的主要目的在于提供一种有机半导体器件,其具有晶体管性能良好的有机半导体晶体管,能够高生产率地生产。 为了实现该目的,本发明提供了一种有机半导体器件,其包括:在基板上形成的基板,源电极和漏电极; 绝缘分隔部分,形成在由绝缘材料制成的源电极和漏极上,形成为绝缘分隔部的开口部设置在由源电极和漏极形成的沟道区的上方,并具有 作为层间绝缘层的功能; 有机半导体层,形成在绝缘分隔部分的开口部分中,并且在源电极和漏电极上形成,并由有机半导体材料制成; 栅极绝缘层,其形成在有机半导体层上并由绝缘树脂材料制成; 以及形成在所述栅极绝缘层上的栅电极,其中; 绝缘分隔部的高度为0.1〜1.5μm。