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11. 发明授权

US5653623A Polishing apparatus with improved exhaust 失效
标题翻译：具有改善排气的抛光装置
公开(公告)号：US5653623A
公开(公告)日：1997-08-05
申请号：US357176
申请日：1994-12-13
申请人： Norio Kimura , Seiji Ishikawa , Masako Kodera , Atsushi Shigeta , Riichirou Aoki
发明人： Norio Kimura , Seiji Ishikawa , Masako Kodera , Atsushi Shigeta , Riichirou Aoki
IPC分类号： B24B53/007 , B24B53/017 , B24B7/04 , B24B29/02
CPC分类号： B24B53/017
摘要： A polishing apparatus for polishing a surface of a workpiece such as a semiconductor wafer is installed in a clean room. The polishing apparatus includes a polishing section having a turntable with an abrasive cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, a loading section for loading the workpiece to be polished onto the top ring, and an unloading section for unloading the workpiece which has been polished from the top ring. A cover covers an entire area of movement of the top ring including the polishing section, the loading section and the unloading section. An exhaust duct discharges air of an interior space of the cover to an outside of an installation space of the polishing apparatus.
摘要翻译：用于抛光诸如半导体晶片的工件的表面的抛光装置安装在洁净室中。抛光装置包括具有安装在其上表面上的研磨布的转台的抛光部分，用于支撑待抛光工件的顶环，并将工件压靠在研磨布上，用于将待抛光工件加载的装载部分以及用于卸载已经从顶环抛光的工件的卸载部分。盖子覆盖包括抛光部分，装载部分和卸载部分在内的顶环的整个运动区域。排气管将盖的内部空间的空气排出到抛光装置的安装空间的外部。

12. 发明授权

US5489336A Apparatus for forming a silicon oxide film on a silicon wafer 失效
标题翻译：用于在硅晶片上形成氧化硅膜的设备
公开(公告)号：US5489336A
公开(公告)日：1996-02-06
申请号：US329651
申请日：1994-10-25
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05C3/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译：公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜。

13. 发明授权

US5398459A Method and apparatus for polishing a workpiece 失效
标题翻译：抛光工件的方法和设备
公开(公告)号：US5398459A
公开(公告)日：1995-03-21
申请号：US156641
申请日：1993-11-24
申请人： Katsuya Okumura , Tohru Watanabe , Riichirou Aoki , Hiroyuki Yano , Masako Kodera , Atsushi Shigeta , You Ishii , Norio Kimura , Masayoshi Hirose , Yukio Ikeda
发明人： Katsuya Okumura , Tohru Watanabe , Riichirou Aoki , Hiroyuki Yano , Masako Kodera , Atsushi Shigeta , You Ishii , Norio Kimura , Masayoshi Hirose , Yukio Ikeda
IPC分类号： B24B37/10 , B24B37/30 , B24B1/00
CPC分类号： B24B37/102 , B24B37/30
摘要： A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.
摘要翻译：诸如半导体晶片的工件位于转盘和顶环之间，并且当顶环被压靠在转盘上时，其通过研磨布在转盘上抛光。顶环具有用于防止工件偏离顶环的下表面的保持环，并且保持环的内径大于工件的外径。转台的转动使平台于转台上表面的方向向工件施加压力，使得工件的外周与保持环的内周接触，并且保持环的旋转赋予转动使工件相对于保持环中的顶环执行行星运动。

14. 发明授权

US5395645A Method for forming a silicon oxide film on a silicon waffer 失效
标题翻译：在硅胶上形成氧化硅膜的方法
公开(公告)号：US5395645A
公开(公告)日：1995-03-07
申请号：US928070
申请日：1992-08-11
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05D1/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译：公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜。

15. 发明申请

US20130119013A1 METHOD FOR CHEMICAL PLANARIZATION AND CHEMICAL PLANARIZATION APPARATUS 有权
标题翻译：化学平面化学和化学平面化装置的方法
公开(公告)号：US20130119013A1
公开(公告)日：2013-05-16
申请号：US13423018
申请日：2012-03-16
申请人： Yukiteru MATSUI , Masako KODERA , Hiroshi TOMITA , Gaku MINAMIHABA , Akifumi GAWASE
发明人： Yukiteru MATSUI , Masako KODERA , Hiroshi TOMITA , Gaku MINAMIHABA , Akifumi GAWASE
IPC分类号： B44C1/22 , B05C9/06
CPC分类号： H01L21/30625 , B24B37/044 , B24B37/24 , H01L21/67075 , H01L21/67219
摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.
摘要翻译：根据一个实施例，公开了用于化学平面化的方法。该方法可以包括在具有不规则性的待处理膜上形成表面层。表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

16. 发明申请

US20130115855A1 POLISHING METHOD AND POLISHING APPARATUS 有权
标题翻译：抛光方法和抛光装置
公开(公告)号：US20130115855A1
公开(公告)日：2013-05-09
申请号：US13415143
申请日：2012-03-08
申请人： Masako KODERA , Yukiteru MATSUI
发明人： Masako KODERA , Yukiteru MATSUI
IPC分类号： B24B37/015 , B24B1/00 , B24B51/00
CPC分类号： B24B37/015 , B24B37/044 , B24B55/02
摘要： According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.
摘要翻译：根据一个实施例，抛光方法包括将正在旋转的衬底旋转的衬底压在抛光垫上并将浆料供应到抛光垫上，测量抛光垫的表面温度，并且当表面温度不低于预定温度时，从具有窄部分的喷嘴朝向抛光垫的喷射流包含过冷液滴。

17. 发明授权

US07101259B2 Polishing method and apparatus 失效
公开(公告)号：US07101259B2
公开(公告)日：2006-09-05
申请号：US10694047
申请日：2003-10-28
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： B24B49/00 , B24B51/00 , H01L21/00 , B24B1/00
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

18. 发明申请

US20050148176A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050148176A1
公开(公告)日：2005-07-07
申请号：US11074774
申请日：2005-03-09
申请人： Yoshitaka Matsui , Masako Kodera
发明人： Yoshitaka Matsui , Masako Kodera
IPC分类号： H01L21/02 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/44
CPC分类号： H01L21/02071 , H01L21/31116 , H01L21/3212 , H01L21/76814 , H01L21/76838 , H01L21/7684 , H01L21/76883
摘要： A method of manufacturing a semiconductor device, comprising the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor. substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.
摘要翻译：一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自由Ti，W和Cu和Al组成的组在其表面上暴露于半导体之上。并且将溶解氢气的氢溶解溶液供给到该结构体的表面。

19. 发明授权

US06419557B2 Polishing method and polisher used in the method 有权
标题翻译：该方法中使用的抛光方法和抛光机
公开(公告)号：US06419557B2
公开(公告)日：2002-07-16
申请号：US09834730
申请日：2001-04-16
申请人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
发明人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
IPC分类号： B24B100
CPC分类号： C09G1/02 , H01L21/31053
摘要： A polishing method including applying a polishing agent containing polishing grains and a surfactant onto an oxide film, which is formed on a substrate having a depressed portion and a protruding portion, wherein the surfactant is an organic compound including at least one hydrophilic group selected from the group consisting of COOH, COOM1, wherein M1 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a carboxyl group, SO3H and SO3M2, wherein M2 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a sulfo group; and polishing the film until the film is flattened without the occurrence of dishing.
摘要翻译：一种抛光方法，包括将含有抛光颗粒和表面活性剂的抛光剂施加到形成在具有凹陷部分和突出部分的基底上的氧化物膜上，其中所述表面活性剂是包含至少一种选自以下的亲水基团的有机化合物：由COOH，COOM1组成的基团，其中M1表示当取代羧基的SO3H和SO3M2的氢原子时可以形成盐的原子或官能团，其中M2表示可以形成盐的原子或官能团当取代磺基的氢原子时; 并抛光膜，直到膜变平而不发生凹陷。

20. 发明授权

US5914275A Polishing apparatus and method for planarizing layer on a semiconductor wafer 失效
公开(公告)号：US5914275A
公开(公告)日：1999-06-22
申请号：US897324
申请日：1997-07-21
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , H01L21/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

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