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11. 发明授权

US6088377A Optical semiconductor device having a diffraction grating and fabrication process thereof 有权
$Optical semiconductor device having a diffraction grating and fabrication process thereof$
标题翻译：具有衍射光栅的光半导体器件及其制造方法
公开(公告)号：US6088377A
公开(公告)日：2000-07-11
申请号：US332890
申请日：1999-06-15
申请人： Manabu Matsuda
发明人： Manabu Matsuda
IPC分类号： G02B5/18 , G02B6/12 , G03F7/20 , H01L21/027 , H01S5/00 , H01S5/02 , H01S5/026 , H01S5/12 , H01S5/125 , H01S5/40 , H01S3/085
CPC分类号： G03F7/70408 , H01S5/12 , H01S5/4031 , G02B2006/12107 , G02B2006/12121 , H01S5/0201 , H01S5/1215 , H01S5/125 , H01S5/4087
摘要： A method of fabricating an optical semiconductor device includes the steps of irradiating a substrate by a first optical beam and a second optical beam such that the first and second optical beams form interference fringes on the substrate, exposing a resist film provided on the substrate by the interference fringes to form a resist pattern, and forming a diffraction grating pattern on the substrate in accordance with the interference fringes by using the resist pattern as a mask. The first and second optical beams are irradiated such that a wavefront of the first optical beam and a wavefront of the second optical beam intersect at an intersection line parallel to the substrate, and the irradiating step is conducted by refracting the first and second optical beams by an optical element having a smooth surface inclined with respect to a plane parallel to the substrate in the direction of the foregoing intersection line and further inclined in a perpendicular direction.
摘要翻译：一种制造光半导体器件的方法包括以下步骤：通过第一光束和第二光束照射衬底，使得第一和第二光束在衬底上形成干涉条纹，将设置在衬底上的抗蚀剂膜暴露于衬底上干涉条纹以形成抗蚀剂图案，并且通过使用抗蚀剂图案作为掩模，根据干涉条纹在基板上形成衍射光栅图案。照射第一光束和第二光束，使得第一光束的波前和第二光束的波阵面在与基板平行的交线处相交，并且通过折射第一和第二光束来进行照射步骤光学元件，其光滑表面相对于与所述基板平行的平面在所述交叉线的方向上倾斜并进一步沿垂直方向倾斜。

12. 发明授权

US5981307A Fabrication process of optical semiconductor device having a diffraction grating 失效
$Fabrication process of optical semiconductor device having a diffraction grating$
标题翻译：具有衍射光栅的光学半导体器件的制造工艺
公开(公告)号：US5981307A
公开(公告)日：1999-11-09
申请号：US923255
申请日：1997-09-04
申请人： Manabu Matsuda
发明人： Manabu Matsuda
IPC分类号： G02B5/18 , G02B6/12 , G03F7/20 , H01L21/027 , H01S5/00 , H01S5/02 , H01S5/026 , H01S5/12 , H01S5/125 , H01S5/40 , H01S3/085
CPC分类号： G03F7/70408 , H01S5/12 , H01S5/4031 , G02B2006/12107 , G02B2006/12121 , H01S5/0201 , H01S5/1215 , H01S5/125 , H01S5/4087
摘要： A method of fabricating an optical semiconductor device includes the steps of irradiating a substrate by a first optical beam and a second optical beam such that the first and second optical beams form interference fringes on the substrate, exposing a resist film provided on the substrate by the interference fringes to form a resist pattern, and forming a diffraction grating pattern on the substrate in accordance with the interference fringes by using the resist pattern as a mask. The first and second optical beams are irradiated such that a wavefront of the first optical beam and a wavefront of the second optical beam intersect at an intersection line parallel to the substrate, and the irradiating step is conducted by refracting the first and second optical beams by an optical element having a smooth surface inclined with respect to a plane parallel to the substrate in the direction of the foregoing intersection line and further inclined in a perpendicular direction.
摘要翻译：一种制造光半导体器件的方法包括以下步骤：通过第一光束和第二光束照射衬底，使得第一和第二光束在衬底上形成干涉条纹，将设置在衬底上的抗蚀剂膜暴露于衬底上干涉条纹以形成抗蚀剂图案，并且通过使用抗蚀剂图案作为掩模，根据干涉条纹在基板上形成衍射光栅图案。照射第一光束和第二光束，使得第一光束的波前和第二光束的波阵面在与基板平行的交线处相交，并且通过折射第一和第二光束来进行照射步骤光学元件，其光滑表面相对于与所述基板平行的平面在所述交叉线的方向上倾斜并进一步沿垂直方向倾斜。

13. 发明授权

US5358898A Method of making a tunable laser diode having a distributed feedback structure 失效
标题翻译：制造具有分布式反馈结构的可调激光二极管的方法
公开(公告)号：US5358898A
公开(公告)日：1994-10-25
申请号：US171963
申请日：1993-12-23
申请人： Shouichi Ogita , Yuji Kotaki , Manabu Matsuda
发明人： Shouichi Ogita , Yuji Kotaki , Manabu Matsuda
IPC分类号： H01S5/042 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/12 , H01S5/227 , H01S5/323 , H01L21/203
CPC分类号： H01S5/06258 , H01S5/227 , H01S5/0425 , H01S5/06 , H01S5/06213 , H01S5/06226 , H01S5/12 , H01S5/1225 , H01S5/124 , H01S5/2275 , H01S5/32391 , Y10S148/05
摘要： A distribution feedback laser diode, comprises a substrate, a waveguide layer provided on the substrate, an active layer provided on the waveguide layer, a diffraction grating provided at an interface between the substrate and the waveguide layer for reflecting an optical radiation formed in the active layer back and forth, a clad layer provided on the active layer for confining the optical radiation within the active layer, a plurality of segmented electrodes provided on the top surface of the clad layer along an elongated direction of the laser diode for injecting the carriers into the active layer, wherein at least one of the segmented electrodes is provided in correspondence to a part of the active layer in which the optical radiation formed in the active layer has a maximum intensity level, and a backside electrode provided at the bottom surface of the substrate for injecting the carriers into the active layer through the substrate.
摘要翻译：分布反馈激光二极管，包括衬底，设置在衬底上的波导层，设置在波导层上的有源层，设置在衬底和波导层之间的界面处的衍射光栅，用于反射形成在有源层中的光辐射叠层，设置在有源层上，用于限制有源层内的光辐射;沿着激光二极管的细长方向设置在包层的顶表面上的多个分段电极，用于将载体注入所述有源层，其中所述分段电极中的至少一个对应于所述有源层中形成的所述光辐射具有最大强度水平的所述有源层的一部分，以及设置在所述有源层的底表面处的背面电极衬底，用于通过衬底将载体注入有源层。

14. 发明授权

US08705583B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US08705583B2
公开(公告)日：2014-04-22
申请号：US12753987
申请日：2010-04-05
申请人： Manabu Matsuda
发明人： Manabu Matsuda
IPC分类号： H01S5/026 , H01S5/125
CPC分类号： H01S5/06258 , B82Y20/00 , H01S5/028 , H01S5/06256 , H01S5/1014 , H01S5/1039 , H01S5/1206 , H01S5/1215 , H01S5/1221 , H01S5/1231 , H01S5/124 , H01S5/125 , H01S5/2224 , H01S5/2275 , H01S5/34306
摘要： A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity.
摘要翻译：半导体激光器包括有源区，包括有源层，决定振荡波长的衍射光栅和相移，以及包括导光层和反射衍射光栅的分布反射区域。分布式反射器区域具有沿空腔方向变化的有效衍射光栅周期。

15. 发明授权

US08494320B2 Optical element and method for manufacturing the same 有权
标题翻译：光学元件及其制造方法
公开(公告)号：US08494320B2
公开(公告)日：2013-07-23
申请号：US13230504
申请日：2011-09-12
申请人： Manabu Matsuda
发明人： Manabu Matsuda
IPC分类号： G02B6/00 , G02B6/34
CPC分类号： H01S5/1215 , B82Y20/00 , H01S5/028 , H01S5/0425 , H01S5/0654 , H01S5/1014 , H01S5/106 , H01S5/1203 , H01S5/1231 , H01S5/124 , H01S5/2275 , H01S5/34306
摘要： An optical device includes: an optical waveguide; and a plurality of diffraction grating layers, provided along the optical waveguide, each including a diffraction grating defined by a discontinuous first semiconductor layer and a second semiconductor layer having a refractive index different from a refractive index of the first semiconductor layer and burying the first semiconductor layer, one diffraction grating layer of the plurality of diffraction grating layers including a third semiconductor layer being continuous with the diffraction grating and made from a material different from materials of the first and the second semiconductor layers.
摘要翻译：光学装置包括：光波导; 以及沿着光波导设置的多个衍射光栅层，每个包括由不连续的第一半导体层限定的衍射光栅和具有与第一半导体层的折射率不同的折射率的第二半导体层，并且将第一半导体所述多个衍射光栅层中的一个衍射光栅层包括与所述衍射光栅连续并由与所述第一和第二半导体层的材料不同的材料制成的第三半导体层。

16. 发明授权

US08319229B2 Optical semiconductor device and method for manufacturing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US08319229B2
公开(公告)日：2012-11-27
申请号：US12880364
申请日：2010-09-13
申请人： Tsuyoshi Yamamoto , Manabu Matsuda
发明人： Tsuyoshi Yamamoto , Manabu Matsuda
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01S5/12 , H01S5/1025 , H01S5/124
摘要： An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a λ/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.
摘要翻译：公开了一种光学半导体器件，其包括有源区，其包括有源层和具有λ/ 4相移的衍射光栅; 无源波导区域各自包括无源波导和衍射光栅，分别设置在发射小面的侧面和后面的侧面，夹持有源区域在无源波导区域之间; 以及施加在所述发射面上的防反射涂层，其中在所述发射刻面侧的所述无源波导区域的长度短于所述后面侧的所述无源波导区域的长度。

17. 发明申请

US20120002285A1 OPTICAL ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光学元件及其制造方法
公开(公告)号：US20120002285A1
公开(公告)日：2012-01-05
申请号：US13230504
申请日：2011-09-12
申请人： Manabu Matsuda
发明人： Manabu Matsuda
IPC分类号： G02B5/18 , C23F1/02
CPC分类号： H01S5/1215 , B82Y20/00 , H01S5/028 , H01S5/0425 , H01S5/0654 , H01S5/1014 , H01S5/106 , H01S5/1203 , H01S5/1231 , H01S5/124 , H01S5/2275 , H01S5/34306
摘要： An optical device includes: an optical waveguide; and a plurality of diffraction grating layers, provided along the optical waveguide, each including a diffraction grating defined by a discontinuous first semiconductor layer and a second semiconductor layer having a refractive index different from a refractive index of the first semiconductor layer and burying the first semiconductor layer, one diffraction grating layer of the plurality of diffraction grating layers including a third semiconductor layer being continuous with the diffraction grating and made from a material different from materials of the first and the second semiconductor layers.
摘要翻译：光学装置包括：光波导; 以及沿着光波导设置的多个衍射光栅层，每个包括由不连续的第一半导体层限定的衍射光栅和具有与第一半导体层的折射率不同的折射率的第二半导体层，并且将第一半导体所述多个衍射光栅层中的一个衍射光栅层包括与所述衍射光栅连续并由与所述第一和第二半导体层的材料不同的材料制成的第三半导体层。

18. 发明授权

US07852890B2 Semiconductor laser and manufacturing method thereof 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US07852890B2
公开(公告)日：2010-12-14
申请号：US11113054
申请日：2005-04-25
申请人： Manabu Matsuda , Tsuyoshi Yamamoto
发明人： Manabu Matsuda , Tsuyoshi Yamamoto
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/12 , H01S5/1231 , H01S5/1237 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/3434 , H01S5/34373
摘要： In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation wavelength of a manufactured laser deviates from a design value, for example, due to the manufacturing errors and the like in the manufacturing of the laser, there is provided a semiconductor laser comprising a semiconductor substrate, a semiconductor stacking body including a waveguide formed on the semiconductor substrate, and a diffraction grating, wherein the diffraction grating is formed along the waveguide so as to appear in the surface of the semiconductor stacking body.
摘要翻译：在半导体激光器中，即使制造的激光器的振荡波长例如由于制造误差而偏离设计值，为了通过以足够的精度调整激光的振荡波长来有效地实现期望的振荡波长，像制造激光器一样，提供了一种包括半导体衬底的半导体激光器，包括形成在半导体衬底上的波导的半导体堆叠体和衍射光栅，其中衍射光栅沿着波导形成以便出现在半导体堆叠体的表面。

19. 发明申请

US20100040100A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20100040100A1
公开(公告)日：2010-02-18
申请号：US12535463
申请日：2009-08-04
申请人： Kan TAKADA , Manabu Matsuda , Takeshi Matsumoto
发明人： Kan TAKADA , Manabu Matsuda , Takeshi Matsumoto
IPC分类号： H01S5/026 , H01L21/02
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/1231 , H01S5/22 , H01S5/32366 , H01S5/3412
摘要： A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion.
摘要翻译：半导体激光器包括有源层，在有源层上形成的第一GaAs层，第一GaAs层包括周期性排列的多个凹部，每个凹部包括（100）晶体表面的底面和斜面包括至少部分的（111）A晶体表面，所述凹部被设置成彼此接触或者在每个相邻的凹部之间具有最小间隙，所述底表面的宽度大于所述最小间隙，形成在凹部上的InGaP层和在凹部上形成在InGaAs层上的第二GaAs层。

20. 发明申请

US20090124457A1 VEHICLE BRAKING FORCE CONTROLLER 失效
标题翻译：车辆制动力控制器
公开(公告)号：US20090124457A1
公开(公告)日：2009-05-14
申请号：US12265416
申请日：2008-11-05
申请人： Chihiro Nitta , Kazuhide Adachi , Hideaki Morita , Manabu Matsuda , Kazushi Konno , Shoko Yokoyama
发明人： Chihiro Nitta , Kazuhide Adachi , Hideaki Morita , Manabu Matsuda , Kazushi Konno , Shoko Yokoyama
IPC分类号： B60W10/00
CPC分类号： B60T7/122 , B60T7/14 , B60T2201/06 , B60W2520/06 , Y10T477/646 , Y10T477/74 , Y10T477/813
摘要： A braking force application control is performed when a change in a driver's posture takes place while a brake pedal is turned on when a vehicle is stopped. As a consequence, in a case in which the driver's posture changes such as when the driver turns to a rear seat side to get something without intending to release depression of the brake pedal, creep of the vehicle that the driver does not intend to happen can be inhibited. Furthermore, the vehicle stop retention is only performed when a travelling direction is a forward direction or a seatbelt is worn. As a result, performance of the vehicle stop retention can be inhibited when it is considered that the driver intentionally desires to let the vehicle creep.
摘要翻译：当车辆停止时制动踏板被接通时，执行驾驶员姿势的变化时的制动力施加控制。结果，在驾驶员的姿势发生变化的情况下，例如当驾驶员转向后座侧而不想释放制动踏板的压下时，驾驶员不想发生的车辆的蠕变可以被禁止。此外，车辆停止保持仅在行驶方向为前进方向或安全带穿着时进行。结果，当认为驾驶员有意希望让车辆蠕变时，可以抑制车辆停止保持的性能。

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