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    • 14. 发明授权
    • Determination method, storage medium and information processing apparatus
    • 确定方法,存储介质和信息处理设备
    • US09551926B2
    • 2017-01-24
    • US13534059
    • 2012-06-27
    • Yuichi GyodaKoji MikamiKouichirou Tsujita
    • Yuichi GyodaKoji MikamiKouichirou Tsujita
    • G03B27/68G03F1/50G03F7/20
    • G03F1/50G03F7/705
    • The present invention provides a determination method of determining exposure conditions of an exposure apparatus including an illumination optical system which illuminates a mask, and a projection optical system which projects a pattern of the mask onto a substrate, the method including a step of setting an illumination parameter for a light intensity distribution formed on a pupil plane of the illumination optical system, and an aberration parameter for an aberration of the projection optical system, and a step of determining a value of the illumination parameter and a value of the aberration parameter so that an image performance of an optical image of the pattern of the mask satisfies an evaluation criterion set for a target pattern to be formed on an image plane of the projection optical system.
    • 本发明提供了一种确定曝光条件的曝光条件的方法,所述曝光装置包括照明掩模的照明光学系统和投影光学系统,所述投影光学系统将掩模的图案投影到基板上,所述方法包括设置照明 用于形成在照明光学系统的光瞳平面上的光强度分布的参数,以及投影光学系统的像差的像差参数,以及确定照明参数的值和像差参数的值的步骤,使得 掩模图案的光学图像的图像性能满足为在投影光学系统的图像平面上形成的目标图案设定的评价标准。
    • 19. 发明申请
    • DETERMINATION METHOD, STORAGE MEDIUM AND INFORMATION PROCESSING APPARATUS
    • 确定方法,存储介质和信息处理设备
    • US20130010272A1
    • 2013-01-10
    • US13534059
    • 2012-06-27
    • Yuichi GyodaKoji MikamiKouichirou Tsujita
    • Yuichi GyodaKoji MikamiKouichirou Tsujita
    • G03B27/72
    • G03F1/50G03F7/705
    • The present invention provides a determination method of determining exposure conditions of an exposure apparatus including an illumination optical system which illuminates a mask, and a projection optical system which projects a pattern of the mask onto a substrate, the method including a step of setting an illumination parameter for a light intensity distribution formed on a pupil plane of the illumination optical system, and an aberration parameter for an aberration of the projection optical system, and a step of determining a value of the illumination parameter and a value of the aberration parameter so that an image performance of an optical image of the pattern of the mask satisfies an evaluation criterion set for a target pattern to be formed on an image plane of the projection optical system.
    • 本发明提供了一种确定曝光条件的曝光条件的方法,所述曝光装置包括照明掩模的照明光学系统和投影光学系统,所述投影光学系统将掩模的图案投影到基板上,所述方法包括设置照明 用于形成在照明光学系统的光瞳平面上的光强度分布的参数,以及投影光学系统的像差的像差参数,以及确定照明参数的值和像差参数的值的步骤,使得 掩模图案的光学图像的图像性能满足为在投影光学系统的图像平面上形成的目标图案设定的评价标准。
    • 20. 发明申请
    • RESIST PATTERN CALCULATION METHOD AND CALCULATION PROGRAM STORAGE MEDIUM
    • 电阻图案计算方法和计算程序存储介质
    • US20120092639A1
    • 2012-04-19
    • US13233209
    • 2011-09-15
    • Ryo NakayamaKouichirou TsujitaKoji MikamiHiroyuki Ishii
    • Ryo NakayamaKouichirou TsujitaKoji MikamiHiroyuki Ishii
    • G03B27/58
    • G03F7/705G03F7/70558G03F7/70608
    • A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern. The method includes: a first step of calculating a light intensity distribution of an optical image formed on the resist, based on the reticle pattern and an exposure condition; a second step of convoluting, using a first diffusion length, the calculated light intensity distribution; a third step of calculating a representative light intensity from the calculated light intensity distribution or the convoluted light intensity distribution; a fourth step of correcting the convoluted light intensity distribution by adding, to the convoluted light intensity distribution, a correction function including a first function given by: { ∑ k = 0 n  ( a k  J k ) }  exp  ( - α   J ) where J is the distribution of the representative light intensity; and a fifth step of calculating the resist pattern based on the corrected light intensity distribution and a slice level set in advance.
    • 记录介质存储用于使计算机执行计算抗蚀剂图案的方法的程序。 该方法包括:基于掩模图案和曝光条件计算形成在抗蚀剂上的光学图像的光强度分布的第一步骤; 使用第一扩散长度卷积计算的光强度分布的第二步骤; 从计算出的光强度分布或卷积光强度分布计算代表光强度的第三步骤; 第四步骤,通过向所述卷积光强度分布中加入包括由下式给出的第一函数的校正函数来校正所述卷积光强度分布:{Σk = 0 n(ak)J k)} exp( J)其中J是代表光强度的分布; 以及第五步骤,基于校正的光强度分布和预先设定的限幅电平来计算抗蚀剂图案。