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11. 发明授权

US06364692B1 Water proof connector 失效
标题翻译：防水连接器
公开(公告)号：US06364692B1
公开(公告)日：2002-04-02
申请号：US09583326
申请日：2000-05-31
申请人： Yasushi Okayasu , Osamu Taniuchi , Hitoshi Okumura , Kazuhiko Fuse
发明人： Yasushi Okayasu , Osamu Taniuchi , Hitoshi Okumura , Kazuhiko Fuse
IPC分类号： H01R1120
CPC分类号： H01R13/5219
摘要： A watertight connector is provided to create a reduced degree of connection resistance. The connector includes a female housing 20 to be connected with a male housing 10. A seal 30 is provided on the front surface of the female housing 20, and is held by a seal holder 40. The seal holder 40 presses the seal 30 against the front surface of an accommodating portion 11 to adhere the seal 30 to front opening ends of cavities 13 before the housings 10, 20 are connected with each other. Thereafter, tabs 23 penetrate the seal 30, and the seal 30 adheres to the outer surfaces of the tabs 23 to provide sealing between the cavities 13. Accordingly, during the connection of the housings 10, 20, resistance resulting from the sealing between the cavities 13 is only sliding-contact resistance created between the outer surfaces of the tabs 23 and the seal member 30.
摘要翻译：提供防水连接器以产生较小的连接电阻。连接器包括与阳壳体10连接的阴壳体20.密封件30设置在阴壳体20的前表面上并由密封件保持器40保持。密封件保持器40将密封件30压靠在阴壳体20上。容纳部分11的前表面，以在壳体10,20彼此连接之前将密封件30粘附到空腔13的前开口端。此后，突片23穿过密封件30，并且密封件30粘附到突片23的外表面，以在腔体13之间提供密封。因此，在壳体10,20的连接期间，由腔体之间的密封产生的阻力 13只是在突片23的外表面和密封件30之间产生的滑动接触电阻。

12. 发明授权

US08852966B2 Heat treatment method and heat treatment apparatus of thin film 有权
标题翻译：薄膜的热处理方法和热处理装置
公开(公告)号：US08852966B2
公开(公告)日：2014-10-07
申请号：US13609947
申请日：2012-09-11
申请人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
发明人： Hiroki Kiyama , Kazuhiko Fuse , Shinichi Kato
IPC分类号： H01L21/26 , H01L21/02 , H01L21/268 , H01L21/67
CPC分类号： H01L21/2686 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L21/67109 , H01L21/67115
摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要翻译：在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间为0.01毫秒以上且1毫秒以下。由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

13. 发明授权

US08623750B2 Heat treatment method for promoting crystallization of high dielectric constant film 有权
标题翻译：促进高介电常数膜结晶的热处理方法
公开(公告)号：US08623750B2
公开(公告)日：2014-01-07
申请号：US13607892
申请日：2012-09-10
申请人： Kazuhiko Fuse , Shinichi Kato
发明人： Kazuhiko Fuse , Shinichi Kato
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02356 , H01L21/2686 , H01L21/28176 , H01L21/67115 , H01L21/68707 , H01L21/68735 , H01L29/513 , H01L29/517 , H01L29/7848
摘要： A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.
摘要翻译：在硅 - 锗层上形成二氧化硅膜，并且在二氧化硅膜上进一步形成高介电常数膜。在半导体晶片上进行来自闪光灯的第一次照射，将半导体晶片的正面的温度从预热温度升温至目标温度，时间范围为3毫秒〜1秒。随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内，持续3毫秒至1秒的时间段。这促进了高介电常数膜的结晶，同时抑制了硅 - 锗层中的变形的减轻。

14. 发明申请

US20130078802A1 HEAT TREATMENT METHOD FOR GROWING SILICIDE 有权
标题翻译：用于生长硅胶的热处理方法
公开(公告)号：US20130078802A1
公开(公告)日：2013-03-28
申请号：US13606281
申请日：2012-09-07
申请人： Kazuhiko FUSE , Shinichi KATO
发明人： Kazuhiko FUSE , Shinichi KATO
IPC分类号： H01L21/768
CPC分类号： H01L21/28518 , H01L21/2686 , H01L21/67115 , H01L21/67248 , H01L21/68742
摘要： Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.
摘要翻译：将硅的离子注入到半导体晶片中的源极/漏极区域中以使半导体晶片中的离子注入区域非晶化。镍膜沉积在非晶化离子注入区上。在其上沉积有镍膜的半导体晶片上进行来自闪光灯的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度，持续1至20毫秒的范围。随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内在1至100毫秒范围内的时间段内。这使得硅化镍在垂直于半导体晶片的方向上优先生长。

15. 发明申请

US20080238434A1 Surface voltmeter 有权
标题翻译：表面电压表
公开(公告)号：US20080238434A1
公开(公告)日：2008-10-02
申请号：US12076887
申请日：2008-03-25
申请人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
发明人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
IPC分类号： G01R29/12
CPC分类号： G01R29/12
摘要： In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
摘要翻译：在表面电压计（1）中，在对测量区域施加光的同时测量在其上形成有绝缘膜的半导体衬底（9）上的测量区域上的表面电压。通过该操作，平衡了在基板（9）的主体上通过充电在绝缘膜的表面上的电荷感应的电压。因此，可以高精度地测量测量区域上的表面电压。由于用于向电极（12）施加电极电压的电极配线（164）沿着振动方向从离开基板（9）的方向从电极（12）延伸，所以可以防止噪声的影响由电极布线（164）振动电极（12）的振动引起的，并且更准确地测量测量区域上的表面电压。

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