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    • 13. 发明申请
    • Rotary compressor
    • 旋转压缩机
    • US20060182646A1
    • 2006-08-17
    • US11353008
    • 2006-02-14
    • Kazuya Sato
    • Kazuya Sato
    • F01C19/00F04C27/00F04C15/00
    • F04C23/008F01C21/08F04C18/3564F04C23/001
    • In a high inner pressure type multistage compression system rotary compressor whose object is to improve sealability of a first rotary compression element and which includes a second rotary compression element having a displacement volume being smaller than that of the first rotary compression element and in which a refrigerant compressed by the first rotary compression element is compressed by the second rotary compression element to discharge the refrigerant into a sealed container, heights of a first cylinder of the first rotary compression element and a second cylinder of the second rotary compression element are set to be equal, diameters of both of eccentric portions are set to be equal, an inner diameter of the first cylinder is set to be larger than that of the second cylinder, and a thickness of a first roller is set to be larger than that of a second roller.
    • 在一种高内压型多级压缩系统旋转式压缩机中,其目的是提高第一旋转压缩元件的密封性,并且包括具有小于第一旋转压缩元件的排量的第二旋转压缩元件,并且其中制冷剂 由第一旋转压缩元件压缩的第二旋转压缩元件被第二旋转压缩元件压缩以将制冷剂排出到密封容器中,第一旋转压缩元件的第一气缸的高度和第二旋转压缩元件的第二气缸的高度被设定为相等 将两个偏心部分的直径设定为相等,将第一气缸的内径设定为大于第二气缸的内径,将第一辊的厚度设定为大于第二辊的厚度 。
    • 17. 发明授权
    • Dielectrically separated wafer and method of the same
    • 电介质分离晶片及其方法
    • US06815774B1
    • 2004-11-09
    • US09421322
    • 1999-10-18
    • Hiroyuki OiKazuya SatoHiroshi Shimamura
    • Hiroyuki OiKazuya SatoHiroshi Shimamura
    • H01L2701
    • H01L21/2007H01L21/304H01L21/76264H01L21/76275H01L21/76286Y10S438/928
    • A dielectrically separated wafer and a fabrication method of the same are provided according to the first, second and third embodiments of the present invention. According to the first embodiment, it becomes possible to expand the device fabrication surface area of the dielectrically separated silicon islands by laminating a low concentration impurity layer including a dopant of the same conductivity on a high concentration impurity layer formed on the bottom of the island. According to the second embodiment, a dielectrically separated wafer and a fabrication method for the same which can grow a polysilicon layer without producing voids in the dielectrically separating oxide layer is provided by forming a seed polysilicon layer at low temperature and under low pressure and by forming, on the seed polysilicon layer, a high temperature polysilicon layer 16. According to the third embodiment, a dielectrically separated wafer and a fabrication method for the same is provided in which the surface between dielectrically separated islands is flattened by polishing the surface of the dielectrically separated wafer only the amount needed for the surface of a dielectrically separated wafer to become a flat surface between dielectrically separated silicon islands 10A, without projections or indentations.
    • 根据本发明的第一,第二和第三实施例,提供了一种介电分离的晶片及其制造方法。根据第一实施例,可以通过以下方式扩大介电分离的硅岛的器件制造表面积: 在形成在岛的底部的高浓度杂质层上层叠包含具有相同导电性的掺杂剂的低浓度杂质层。根据第二实施例,可以生长多晶硅层的电介质分离的晶片及其制造方法 通过在低温和低压下形成种子多晶硅层,并且在种子多晶硅层上形成高温多晶硅层16来提供介电离析氧化物层中不产生空隙的方式。根据第三实施例,介电分离 晶片及其制造方法,其中冲浪 介电分离的岛之间的ace通过抛光介电离开的晶片的表面而被平坦化,仅将介电离开的晶片的表面所需的量变成在介电分离的硅岛10A之间的平坦表面,而没有突出或凹陷。
    • 18. 发明授权
    • Ti-Zr type alloy and medical appliance formed thereof
    • Ti-Zr型合金及其医疗用具
    • US06767418B1
    • 2004-07-27
    • US09551171
    • 2000-04-17
    • Tao ZhangKazuya SatoKei KurosakaYuzi OgataXinmin WangTakashi KanekoYuu Kasori
    • Tao ZhangKazuya SatoKei KurosakaYuzi OgataXinmin WangTakashi KanekoYuu Kasori
    • C22C1400
    • A61L27/306A61L27/06A61L31/022A61L31/18Y10S623/90
    • A Ti—Zr type alloy manifesting excellent plastic workability at normal temperature fit for the use in general industry, allowing improvement in corrosion resistance fit for the use in medical treatment, offering improved corrosion resistance in an acidic solution, particularly a HCl solution, and having flexibility as evinced by a low Young's modulus on a par with a bone; and a medical appliance such as a guide wire to be directly inserted into a blood vessel of a human body under the X-ray fluoroscopy and a stent retained in a human body for a long time, which are made of the Ti—Zr type alloy are provided. The Ti—Zr type alloy of the present invention consists of 25 to 50% by weight of Ti, 25 to 60% by weight of Zr, 5 to 30% by weight of Nb, and 5 to 40% by weight of Ta, provided that the weight ratio of Zr to Ti be in the range of 0.5 to 1.5 and the weight ratio of Nb to Ta be in the range of 0.125 to 1.5. The medical appliance of the present invention comprises a part formed of a Ti—Zr type alloy which consists of 25 to 50% by weight of Ti, 25 to 60% by weight of Zr, 5 to 30% by weight of Nb, and 5 to 40% by weight of Ta, provided that the weight ratio of Zr to Ti fall in the range of 0.5 to 1.5 and the weight ratio of Nb to Ta fall in the range of 0.125 to 1.5.
    • 在普通工业中适用于普通工业的具有优异塑性加工性能的Ti-Zr型合金,可提高适用于医疗用途的耐腐蚀性,在酸性溶液,特别是HCl溶液中提供改善的耐腐蚀性,并具有 灵活性由与骨骼相当的低杨氏模量所证明; 以及在X射线荧光透视下直接插入人体的血管中的导线等医疗用具,长时间保持在人体内的支架,其由Ti-Zr型合金 被提供。 本发明的Ti-Zr型合金由25〜50重量%的Ti,25〜60重量%的Zr,5〜30重量%的Nb和5〜40重量%的Ta组成, Zr与Ti的重量比在0.5〜1.5的范围内,Nb与Ta的重量比在0.125〜1.5的范围。 本发明的医疗器具包括由Ti-Zr型合金形成的部分,其由25〜50重量%的Ti,25〜60重量%的Zr,5〜30重量%的Nb和5 至40重量%,条件是Zr与Ti的重量比落在0.5至1.5的范围内,Nb与Ta的重量比落在0.125至1.5的范围内。
    • 19. 发明授权
    • Method for inspecting exposure apparatus
    • 检查曝光装置的方法
    • US06760101B2
    • 2004-07-06
    • US09783295
    • 2001-02-15
    • Kazuya SatoSoichi Inoue
    • Kazuya SatoSoichi Inoue
    • G01N2100
    • G03F7/70591G01N21/956G03F7/70941
    • Light emitted from an illumination optical system is guided to a photomask where a pattern is formed of an optical member including a light transmission pattern as a diffraction grating pattern, in which a light transmission part and a opaque part are repeated in a finite period and a periphery of the light transmission pattern is shielded by a opaque area, such that a plurality of ratios are given between the light transmission part and the opaque part. Diffraction light, which has passed through the photomask, is irradiated on a projection optical system, thereby to transfer a pattern reflecting an intensity distribution of the diffraction light to a wafer. A change of transmittance depending on a light path of the projection optical system is measured, based on a pattern image of the diffraction light transferred to the wafer. Pattern transfer is carried out in a non-conjugate state.
    • 从照明光学系统发射的光被引导到光掩模,其中图案由包括作为衍射光栅图案的光透射图案的光学构件形成,其中在有限的周期内重复光透射部分和不透明部分, 透光图案的周边被不透明区域屏蔽,使得在透光部分和不透明部分之间具有多个比率。 已经通过光掩模的衍射光被照射在投影光学系统上,从而将反射衍射光的强度分布的图案传送到晶片。 基于传输到晶片的衍射光的图案图像,测量根据投影光学系统的光路的透射率的变化。 模式转移在非共轭状态下进行。
    • 20. 发明授权
    • Method of examining an exposure tool
    • 检查曝光工具的方法
    • US06317198B1
    • 2001-11-13
    • US09345758
    • 1999-07-01
    • Kazuya SatoSatoshi TanakaTadahito FujisawaSoichi Inoue
    • Kazuya SatoSatoshi TanakaTadahito FujisawaSoichi Inoue
    • G03B2732
    • G03F7/706
    • In a method of examining the shape of the light source of an exposure tool, the shape of the pupil of its projection optical system, and the alignment of the shape of the light source with the shape of the pupil, the exposure tool comprising a light source, an illumination optical system for directing the light emitted from the light source to a reticle, and a projection optical system for transferring the reduced image on the reticle onto a wafer, the light emitted from the light source is projected on a reticle including a grating pattern where a transmitting area and a shading area are repeated in a finite number, the diffracted light of the first order or higher passed through the reticle is caused to illuminate the outer edge of the pupil of the projection optical system, and the pattern image on the reticle is projected on the wafer in the defocus state.
    • 在检查曝光工具的光源的形状,其投影光学系统的光瞳的形状以及光源的形状与瞳孔的形状的对准的方法中,曝光工具包括光 光源,用于将从光源发射的光引导到掩模版的照明光学系统,以及用于将掩模版上的还原图像转印到晶片上的投影光学系统,从光源发射的光被投射在包括 以有限数量重复发送区域和阴影区域的光栅图案,使通过标线的一级以上的衍射光照射投影光学系统的光瞳的外缘,并且图案图像 在散焦状态下,在掩模版上投影在晶片上。