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11. 发明申请

US20060292804A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20060292804A1
公开(公告)日：2006-12-28
申请号：US11458938
申请日：2006-07-20
申请人： Jun Ho SEO , Jong Ho JANG
发明人： Jun Ho SEO , Jong Ho JANG
IPC分类号： H01L21/336
CPC分类号： H01L33/46 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , Y10S257/918 , H01L2924/00014
摘要： The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.
摘要翻译：本发明涉及一种氮化物半导体LED及其制造方法。在LED中，第一氮化物半导体层，有源区，发光结构的第二氮化物半导体层依次形成在透明基板上。电介质镜层形成在衬底的下侧，并且具有至少一对第一折射率的交替的第一介电膜和具有大于第一折射率的第二折射率的第二电介质膜。在基板和发光结构的侧面上形成横向绝缘层。本发明的LED有效地准直了可能被熄灭的不期望的导向的光线，以使发光效率最大化，并且被形成在其侧面上的电介质镜层保护以显着改善ESD特性。

12. 发明授权

US06741136B2 Circuit for preventing system malfunction in semiconductor memory and method thereof 有权
标题翻译：用于防止半导体存储器中的系统故障的电路及其方法
公开(公告)号：US06741136B2
公开(公告)日：2004-05-25
申请号：US10152624
申请日：2002-05-23
申请人： Jun Ho Seo
发明人： Jun Ho Seo
IPC分类号： H03B100
CPC分类号： G11C7/222 , G11C7/22
摘要： A circuit for preventing a system malfunction in a semiconductor memory includes an oscillating circuit generating an oscillating clock signal by receiving an oscillating signal, a system clock generator generating a system clock signal by receiving the oscillating clock signal, and a malfunction preventing unit resetting an inner system by sensing an amplitude variation of the oscillating signal wherein the amplitude variation is caused by noise.
摘要翻译：用于防止半导体存储器中的系统故障的电路包括通过接收振荡信号产生振荡时钟信号的振荡电路，通过接收振荡时钟信号产生系统时钟信号的系统时钟发生器，以及故障防止单元，通过感测振幅信号的振幅变化，其中振幅变化是由噪声引起的。

13. 发明授权

US07645689B2 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 失效
标题翻译：具有ESD保护能力的氮化镓系发光器件及其制造方法
公开(公告)号：US07645689B2
公开(公告)日：2010-01-12
申请号：US11812868
申请日：2007-06-22
申请人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
发明人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
IPC分类号： H01L21/20
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
摘要翻译：公开了一种氮化镓基发光器件及其制造方法。发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层在绝缘膜上。该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

14. 发明申请

US20080260387A1 OUTPUT CURRENT PUMPING CIRCUIT AND REMOTE CONTROLLER USING THE SAME 有权
公开(公告)号：US20080260387A1
公开(公告)日：2008-10-23
申请号：US12014225
申请日：2008-01-15
申请人： Jun-Ho SEO , Jeong-Woo LEE
发明人： Jun-Ho SEO , Jeong-Woo LEE
IPC分类号： H04B10/00
CPC分类号： G08C23/04 , H02J7/0065 , H02M3/07
摘要： The present invention relates to a remote control IC having a circuit for pumping up current of an output port and a remote controller implemented to be capable of operating with one battery of about 1.5V using the IC. In the remote controller, an infrared LED emits light through the remote control IC, so that signals are transmitted to devices to be controlled such as a television set. In order to perform all functions normally even at low voltage and particularly to secure a sufficient transmission distance by driving the infrared LED, the present invention implements a remote controller comprising a remote control IC having a circuit for pumping up output current of an output port, which needs high output current, even at low voltage, and a battery of about 1.5V for driving the remote controller, wherein the infrared LED is driven by the pumped up output current of the output port of the remote control IC, whereby the remote controller can maintain a sufficient transmission distance with only one battery of about 1.5V.The output port according to the present invention has an output current pumping circuit for detecting a level of power voltage according to the drop of the power voltage, boosting the power voltage, and supplying a voltage boosted higher than the power voltage to the gate of a MOS transistor to obtain output current of high voltage. The output current pumping circuit comprises a power voltage detection unit for determining a level of the power voltage, a boost circuit unit for boosting the power voltage depending on an effective signal of the power voltage detection unit, and a data conversion unit for receiving the changed (boosted) power voltage and controlling the changed (boosted) power voltage in response to a transmission signal to supply gate voltage of the MOS transistor for outputting final current.The present invention is advantageous in that further higher output current can be obtained at the same power voltage by applying a voltage higher than the power voltage to the gate of the MOS transistor for outputting final current.

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