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11. 发明授权

US06911084B2 Low temperature epitaxial growth of quaternary wide bandgap semiconductors 失效
标题翻译：四元宽带隙半导体的低温外延生长
公开(公告)号：US06911084B2
公开(公告)日：2005-06-28
申请号：US09981024
申请日：2001-10-16
申请人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
发明人： John Kouvetakis , Ignatius S. T. Tsong , Radek Roucka , John Tolle
IPC分类号： C30B25/02 , H01L21/205 , H01L33/26 , H01S5/30 , H01S5/32 , C30B25/08
CPC分类号： H01L33/26 , C30B25/02 , C30B29/52 , H01L21/02378 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01S5/30 , H01S5/3027 , H01S5/32 , H01S2304/02
摘要： A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications. Large-area substrates for growth of conventional Group III nitrides and compounds are produced by SiCAlN deposited on large-diameter silicon wafers. The quaternary compounds, especially the boron containing compounds, exhibit extreme hardness. These quaternary compounds are radiation resistant and may be used in space exploration.
摘要翻译：提供了在550-750℃的温度下生长具有式YCZN的四元外延膜的方法，其中Y是IV族元素，Z是III族元素。在该方法中，将前体H 3 YCN的气体流量和Z原子的蒸气通量引入气体分子束外延（GSMBE）室中，在其中它们结合形成YCZN的薄膜，底物。优选的衬底是硅，碳化硅和AlN /硅结构。提供外延薄膜SiCA1N和GeCA1N。通过调整GSMBE工艺的反应参数和四元合金薄膜成分的相对浓度，可以通过该方法实现带隙工程。通过本方法制造的半导体器件具有约2eV至约6eV的带隙，并且具有从可见到紫外线的光谱范围，使得它们可用于各种光电子和微电子应用。用于生长常规III族氮化物和化合物的大面积衬底由沉积在大直径硅晶片上的SiCAlN产生。四元化合物，特别是含硼化合物，具有极高的硬度。这些四元化合物具有耐辐射性，可用于太空探索。

12. 发明授权

US08568681B2 Hydride compounds with silicon and germanium core atoms and method of synthesizing same 失效
标题翻译：具有硅和锗核心原子的氢化物化合物及其合成方法
公开(公告)号：US08568681B2
公开(公告)日：2013-10-29
申请号：US13180961
申请日：2011-07-12
申请人： John Kouvetakis , Cole J. Ritter , John Tolle
发明人： John Kouvetakis , Cole J. Ritter , John Tolle
IPC分类号： C01B33/00
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-xSiHx, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HxSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-xSiHx的硅 - 锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配位体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括H x Si（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括将H3GeSiH 2（OSO 2 CF 3）与KGeH 3组合，形成了。

13. 发明授权

US08524582B2 Silicon-germanium hydrides and methods for making and using same 失效
公开(公告)号：US08524582B2
公开(公告)日：2013-09-03
申请号：US13407195
申请日：2012-02-28
申请人： John Kouvetakis , Cole J. Ritter, III
发明人： John Kouvetakis , Cole J. Ritter, III
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10T428/261 , Y10T428/265 , Y10T428/31663
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

14. 发明授权

US08029905B2 GeSiSn-based compounds, templates, and semiconductor structures 有权
标题翻译：基于GeSiSn的化合物，模板和半导体结构
公开(公告)号：US08029905B2
公开(公告)日：2011-10-04
申请号：US11908143
申请日：2006-03-10
申请人： John Kouvetakis , Radek Roucka
发明人： John Kouvetakis , Radek Roucka
IPC分类号： B32B15/04 , C01B33/00
CPC分类号： C23C16/0272 , C23C16/301 , C23C16/42 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02502 , H01L21/02532 , H01L21/02535 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/0262 , H01L29/161 , H01L29/165 , H01L29/20 , H01L29/22 , H01L29/267 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/03046 , H01L31/101 , Y02E10/544 , Y02E10/547
摘要： The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01
摘要翻译：本发明提供新的式Gei-x-ySixSny化合物，其中0.01

15. 发明授权

US07981392B2 Hydride compounds with silicon and germanium core atoms and method of synthesizing same 有权
标题翻译：具有硅和锗核心原子的氢化物化合物及其合成方法
公开(公告)号：US07981392B2
公开(公告)日：2011-07-19
申请号：US11662722
申请日：2004-12-31
申请人： John Kouvetakis , Cole J. Ritter, III , John Tolle
发明人： John Kouvetakis , Cole J. Ritter, III , John Tolle
IPC分类号： C01B33/00
CPC分类号： C01B33/04 , C01B6/06 , Y10S148/058
摘要： A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HXSi(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HXSi(OSO2CF3)4-x or HXSi(OSO2C4F9)4-x wherein x=1 or 2. A method for synthesizing (H3Ge)2SiH2 includes combining H3GeSiH2(OSO2CF3) with KGeH3 under conditions whereby (H3Ge)2SiH2 is formed.
摘要翻译：提供了一种用于合成式（H3Ge）4-XSiHX的硅锗化合物的方法，其中x = 0,1,2或3.该方法包括将硅烷三氟甲磺酸酯与具有GeH 3配体的化合物组合，形成硅 - 锗氢化物。具有GeH 3配体的化合物选自KGeH 3，NaGeH 3和MR 3 GeH 3，其中M是IV族元素，R是有机配体。三氟甲磺酸硅烷可以是HXSi（OSO 2 CF 3）4-x或H x Si（OSO 2 C 4 F 9）4-x。该方法可以通过在形成硅氢化氢的条件下将硅烷三氟甲磺酸酯与包含SiH 3配体的化合物组合来合成丙硅烷（H3Si）2 SiH 2和异四硅烷类似物（H3Si）3 SiH。三氟甲磺酸硅烷可以包括HXSi（OSO 2 CF 3）4-x或HXSi（OSO 2 C 4 F 9）4-x，其中x = 1或2.合成（H3Ge）2 SiH 2的方法包括在下列条件下组合H3GeSiH 2（OSO 2 CF 3）与KGeH 3：（H3Ge）2 Si 形成了。

16. 发明申请

US20090050935A1 Silicon-Germanium Hydrides and Methods for Making and Using Same 有权
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US20090050935A1
公开(公告)日：2009-02-26
申请号：US12093256
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter III
发明人： John Kouvetakis , Cole J. Ritter III
IPC分类号： H01L29/24 , C01B33/04 , B32B9/04 , C30B23/02 , H01B1/06 , H01B1/04 , H01B1/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10T428/261 , Y10T428/265 , Y10T428/31663
摘要： The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.
摘要翻译：本发明提供硅锗化合物，其合成方法，其沉积方法和使用该化合物制备的半导体结构。化合物由下式定义：SiHnI（GeHn2）y，其中y为2,3或4，其中n1为0,1,2或3以满足价态，并且其中n2对于每个Ge原子独立地为0,1,2或3 在化合物中，以满足化合价。

17. 发明申请

US20080277647A1 Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon 失效
标题翻译：基于Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件
公开(公告)号：US20080277647A1
公开(公告)日：2008-11-13
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L31/0264
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： A semiconductor structure including a single quantum well Ge1−x1−ySix1Sn/Ge1−x2Six2 heterostructure grown strain-free on Si(100) via a Sn1−xGex buffer layer is shown.
摘要翻译：包括单量子阱的半导体结构Ge 1-x1-y Si 1 Sn 1 / x 1 x 2 Si x 2 x 2 示出了在Si（100）上通过Sn 1-x N Ge x S x缓冲层生长无应变的异质结构。

18. 发明申请

US20080164570A1 Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications 有权
标题翻译：锆和铪硼化物合金模板在硅上用于氮化物一体化应用
公开(公告)号：US20080164570A1
公开(公告)日：2008-07-10
申请号：US11969689
申请日：2008-01-04
申请人： John Kouvetakis , Radek Roucka
发明人： John Kouvetakis , Radek Roucka
IPC分类号： H01L21/36 , H01L29/06
CPC分类号： H01L29/24 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.
摘要翻译：提供半导体结构，其包括在衬底上形成的衬底和外延层，其中外延层包含B; 和选自Zr，Hf和Al中的一种或多种元素，并且具有大于50nm的厚度。此外，将III族氮化物集成到衬底上的方法，包括在衬底上形成Zr，Hf，Al或其混合物的二硼化物的外延缓冲层; 并且在缓冲层上形成III族氮化物层，其用于使缓冲层与下面的衬底热分离，从而大大减少在制造和/或操作时在半导体结构中诱发的应变。

19. 发明申请

US20060163612A1 Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn 失效
标题翻译：基于si，ge和sn的Sixsnyge1-x-y和相关合金异质结构
公开(公告)号：US20060163612A1
公开(公告)日：2006-07-27
申请号：US10559979
申请日：2004-06-14
申请人： John Kouvetakis , Matthew Bauer
发明人： John Kouvetakis , Matthew Bauer
IPC分类号： H01L29/739
CPC分类号： H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0259 , H01L21/0262 , H01L29/161 , H01L29/165 , Y02E10/547 , Y10S148/169 , Y10S438/936
摘要： A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-y semiconductors (x≦0.25, y≦0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-y, films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.
摘要翻译：在Si-Ge-Sn系统中合成器件质量合金和有序相的新方法使用UHV-CVD工艺，并且SnD <4> 与SiH 3 GeH SUB> 3 。使用该方法，生长单相Si x 1 Sn y y Ge 1-xy x半导体（x <= 0.25，y <= 0.11）在Si上通过Ge 1-x Sn Sn x缓冲层。Ge 1-x Sn 3 x缓冲层有利于异质外延膜的生长，并且作为可以在结构上符合并吸收由更硬的Si和Si-Ge-Sn材料。使用提供高纯度半导体级材料的新的高产率法制备SiH 3 GeH 3 N 3种类。

20. 发明申请

US20130313579A1 DILUTE SN-DOPED GE ALLOYS 审中-公开
公开(公告)号：US20130313579A1
公开(公告)日：2013-11-28
申请号：US13885121
申请日：2011-11-18
申请人： John Kouvetakis , Richard Beeler , Jose Menendez , Radek Roucka
发明人： John Kouvetakis , Richard Beeler , Jose Menendez , Radek Roucka
IPC分类号： H01L29/12 , H01L31/028 , H01L21/02
CPC分类号： H01L29/12 , H01L21/02104 , H01L31/028 , H01L31/105 , H01L31/1075 , H01L31/1812 , Y02E10/547
摘要： Detectors based on such Ge(Sn) alloys of the formula Ge1-xSnx (e.g., 0
摘要翻译：基于Ge1-xSnx（例如，0

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