专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06844569B1 Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby 有权
标题翻译：由此制造氮化物系半导体及氮化物系半导体的制造方法
公开(公告)号：US06844569B1
公开(公告)日：2005-01-18
申请号：US10831190
申请日：2004-04-26
申请人： Kyu Han Lee , Sun Woon Kim , Je Won Kim
发明人： Kyu Han Lee , Sun Woon Kim , Je Won Kim
IPC分类号： H01L21/3065 , C30B29/60 , H01L21/20 , H01L21/205 , H01L33/22 , H01L33/32 , H01L33/00
CPC分类号： H01L33/007 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L33/22
摘要： The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.
摘要翻译：本发明涉及一种氮化物系半导体的制造方法及其制造的氮化物系半导体。在本发明的制造方法中，在蓝宝石基板上形成自组织金属层。具有自组织金属层的蓝宝石衬底被加热，使得自组织金属聚结成纳米级簇以不规则地暴露蓝宝石衬底的上表面。使用自组织金属簇作为掩模对蓝宝石衬底的暴露部分进行等离子体蚀刻，以在蓝宝石衬底上形成纳米尺度的不均匀结构。将所得结构湿式蚀刻以除去自组织的金属簇。形成在蓝宝石衬底上的纳米尺度不均匀结构减小了蓝宝石衬底和氮化物基半导体层之间的应力和结果的位错，并且增加了其之间的量子效率。

12. 发明申请

US20140260719A1 RACK BAR SUPPORT DEVICE OF A STEERING GEAR 有权
标题翻译：转向齿轮的支撑杆支撑装置
公开(公告)号：US20140260719A1
公开(公告)日：2014-09-18
申请号：US14353674
申请日：2012-09-06
申请人： Seong-Hun Bae , Chang-Wook Son , Chung-Shin Lee , Jin-Woong Lee , Je-Won Kim
发明人： Seong-Hun Bae , Chang-Wook Son , Chung-Shin Lee , Jin-Woong Lee , Je-Won Kim
IPC分类号： B62D3/12
CPC分类号： B62D3/126 , B62D3/123 , F16H55/283 , Y10T74/18096
摘要： A rack bar support device supports a rack bar of a steering device of a vehicle toward a pinion shaft, and includes a rack bearing which is disposed opposite the pinion to contact the rack bar and a biasing assembly providing a force of pushing the rack bearing along a biasing axis toward the rack bar to urge the rack bearing to push the rack bar is engaged with the pinion shaft. The biasing assembly includes an adjustment plug, an adjustment assembly and a support plate assembly. The support plate assembly includes a support plate which is movably disposed between the adjustment member and the rack bearing in a state of being supported by the adjustment member, and a gap is formed between the support plate and the rack bearing.
摘要翻译：机架杆支撑装置支撑车辆转向装置的齿条朝向小齿轮轴，并且包括齿条轴承，该齿条轴承设置成相对于小齿轮与齿条相接触;以及偏置组件，其提供推动齿条轴承的力朝向齿条的推压轴承推动齿条的偏压轴与小齿轮轴接合。偏压组件包括调节塞，调节组件和支撑板组件。支撑板组件包括支撑板，该支撑板在由调节构件支撑的状态下可移动地设置在调节构件和齿条轴承之间，并且在支撑板和齿条轴承之间形成间隙。

13. 发明申请

US20140103359A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140103359A1
公开(公告)日：2014-04-17
申请号：US14125878
申请日：2011-07-28
申请人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
发明人： Hyun Wook Shim , Sang Heon Han , Jae Woong Han , Dong Chul Shin , Je Won Kim , Dong Ju Lee
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/025 , H01L33/20 , H01L33/24
摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.
摘要翻译：提供了一种具有增强的发光效率的半导体发光器件及其制造方法。半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

14. 发明授权

US08405103B2 Photonic crystal light emitting device and manufacturing method of the same 有权
标题翻译：光子晶体发光器件及其制造方法相同
公开(公告)号：US08405103B2
公开(公告)日：2013-03-26
申请号：US12182383
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

15. 发明申请

US20120043557A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的半导体发光器件
公开(公告)号：US20120043557A1
公开(公告)日：2012-02-23
申请号：US13286881
申请日：2011-11-01
申请人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
发明人： Sun Woon KIM , Hyun Kyung KIM , Je Won KIM , In Seok CHOI , Kyu Han LEE , Jeong Tak OH
IPC分类号： H01L33/02 , H01L33/22
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

16. 发明授权

US08110847B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08110847B2
公开(公告)日：2012-02-07
申请号：US12003276
申请日：2007-12-21
申请人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
发明人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
摘要翻译：提供一种包含基板的氮化物系半导体LED，形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

17. 发明授权

US08071994B2 Semiconductor light-emitting device with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的半导体发光器件
公开(公告)号：US08071994B2
公开(公告)日：2011-12-06
申请号：US12624106
申请日：2009-11-23
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

18. 发明授权

US07902544B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07902544B2
公开(公告)日：2011-03-08
申请号：US12787910
申请日：2010-05-26
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译：本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。至少一个量子势垒层具有带隙调制多层结构。

19. 发明授权

US07893443B2 Nitride based semiconductor light-emitting device 有权
标题翻译：氮化物基半导体发光器件
公开(公告)号：US07893443B2
公开(公告)日：2011-02-22
申请号：US11380415
申请日：2006-04-26
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

20. 发明申请

US20110037086A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110037086A1
公开(公告)日：2011-02-17
申请号：US12911320
申请日：2010-10-25
申请人： Je Won KIM , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won KIM , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/30
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式