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    • 12. 发明授权
    • Dendrimer solid acid and polymer electrolyte membrane including the same
    • 树枝状聚合物固体酸和聚合物电解质膜包括相同的
    • US08119833B2
    • 2012-02-21
    • US13176699
    • 2011-07-05
    • Myung-sup JungJin-gyu LeeSang-kook MahJae-jun Lee
    • Myung-sup JungJin-gyu LeeSang-kook MahJae-jun Lee
    • C07C309/32C07C309/42C07C309/33C07C309/44H01M8/22
    • C08J5/2256C08J5/2275C08J2300/00C08J2300/202C08J2379/08
    • Provided are a dendrimer solid acid and a polymer electrolyte membrane using the same. The polymer electrolyte membrane includes a macromolecule of a dendrimer solid acid having ionically conductive terminal groups at the surface thereof and a minimum amount of ionically conductive terminal groups required for ionic conduction, thus suppressing swelling and allowing a uniform distribution of the dendrimer solid acid, thereby improving ionic conductivity. Since the number of ionically conductive terminal groups in the polymer electrolyte membrane is minimized and the polymer matrix in which swelling is suppressed is used, methanol crossover and difficulties of outflow due to a large volume may be reduced, and a macromolecule of the dendrimer solid acid having the ionically conductive terminal groups on the surface thereof is uniformly distributed. Accordingly, ionic conductivity is high and thus, the polymer electrolyte membrane shows good ionic conductivity even in non-humidified conditions.
    • 提供了树枝状聚合物固体酸和使用其的聚合物电解质膜。 聚合物电解质膜包括其表面具有离子导电性端基的树枝状聚合物固体酸的高分子和离子传导所需的离子导电性端基的最小量,因此抑制了树枝状聚合物固体酸的均匀分布,从而 提高离子电导率。 由于聚合物电解质膜中的离子导电性端基的数量被最小化,并且使用抑制了溶胀的聚合物基体,所以甲基交联和体积大的流出困难可能降低,并且树枝状聚合物固体酸的高分子 其表面上的离子导电性端基均匀分布。 因此,离子电导率高,因此即使在非加湿条件下,高分子电解质膜也具有良好的离子传导性。
    • 14. 发明申请
    • DENDRIMER SOLID ACID AND POLYMER ELECTROLYTE MEMBRANE INCLUDING THE SAME
    • DENDRIMER固体酸和聚合物电解质膜包括它们
    • US20110262833A1
    • 2011-10-27
    • US13176699
    • 2011-07-05
    • Myung-sup JungJin-gyu LeeSang-kook MahJae-jun Lee
    • Myung-sup JungJin-gyu LeeSang-kook MahJae-jun Lee
    • H01M8/10
    • C08J5/2256C08J5/2275C08J2300/00C08J2300/202C08J2379/08
    • Provided are a dendrimer solid acid and a polymer electrolyte membrane using the same. The polymer electrolyte membrane includes a macromolecule of a dendrimer solid acid having ionically conductive terminal groups at the surface thereof and a minimum amount of ionically conductive terminal groups required for ionic conduction, thus suppressing swelling and allowing a uniform distribution of the dendrimer solid acid, thereby improving ionic conductivity. Since the number of ionically conductive terminal groups in the polymer electrolyte membrane is minimized and the polymer matrix in which swelling is suppressed is used, methanol crossover and difficulties of outflow due to a large volume may be reduced, and a macromolecule of the dendrimer solid acid having the ionically conductive terminal groups on the surface thereof is uniformly distributed. Accordingly, ionic conductivity is high and thus, the polymer electrolyte membrane shows good ionic conductivity even in non-humidified conditions.
    • 提供了树枝状聚合物固体酸和使用其的聚合物电解质膜。 聚合物电解质膜包括其表面具有离子导电性端基的树枝状聚合物固体酸的高分子和离子传导所需的离子导电性端基的最小量,因此抑制了树枝状聚合物固体酸的均匀分布,从而 提高离子电导率。 由于聚合物电解质膜中的离子导电性端基的数量被最小化,并且使用抑制了溶胀的聚合物基体,所以甲基交联和体积大的流出困难可能降低,并且树枝状聚合物固体酸的高分子 其表面上的离子导电性端基均匀分布。 因此,离子电导率高,因此即使在非加湿条件下,高分子电解质膜也具有良好的离子传导性。
    • 15. 发明授权
    • Semiconductor memory device and semiconductor memory system for compensating crosstalk
    • 用于补偿串扰的半导体存储器件和半导体存储器系统
    • US08036051B2
    • 2011-10-11
    • US12355421
    • 2009-01-16
    • Sung-Joo ParkJae-Jun Lee
    • Sung-Joo ParkJae-Jun Lee
    • G11C7/00
    • G11C7/02G11C7/1048G11C7/12G11C29/02G11C29/025
    • A semiconductor memory device and a semiconductor memory system. The semiconductor memory device includes channels configured to transmit signals from a transmitter to a receiver, and a crosstalk compensator. The crosstalk compensator may be connected between the channels to compensate for crosstalk. The crosstalk compensator may comprise a capacitor connected in parallel between the channels, and a switching unit connected between the capacitor and one of the channels. The switching unit may control connections or disconnections between the capacitor and the channel. Therefore, the semiconductor memory device and the semiconductor memory system compensate for crosstalk occurring between transmitted signals that are out of phase with each other.
    • 半导体存储器件和半导体存储器系统。 半导体存储器件包括被配置为将信号从发送器发送到接收器的通道和串扰补偿器。 串扰补偿器可以连接在通道之间以补偿串扰。 串扰补偿器可以包括在通道之间并联连接的电容器,以及连接在电容器和其中一个通道之间的开关单元。 开关单元可以控制电容器和通道之间的连接或断开。 因此,半导体存储器件和半导体存储器系统补偿在彼此不同相位的发射信号之间发生的串扰。