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11. 发明申请

US20090146161A1 GROUP III NITRIDE COMPOUND SEMICONDUCTOR STACKED STRUCTURE 有权
标题翻译： III类氮化物半导体堆叠结构
公开(公告)号：US20090146161A1
公开(公告)日：2009-06-11
申请号：US12300306
申请日：2007-05-08
申请人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
发明人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
IPC分类号： H01L29/205 , H01L21/20 , H01L33/00
CPC分类号： C23C16/303 , C23C16/0272 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.
摘要翻译：本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

12. 发明申请

US20090114942A1 APPARATUS FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：用于制造III族氮化物半导体层的装置，制备III族氮化物半导体层的方法，III族氮化物半导体发光器件，制造III族氮化物半导体发光器件的方法和灯
公开(公告)号：US20090114942A1
公开(公告)日：2009-05-07
申请号：US12257065
申请日：2008-10-23
申请人： Yasunori YOKOYAMA , Takehiko OKABE , Hisayuki MIKI
发明人： Yasunori YOKOYAMA , Takehiko OKABE , Hisayuki MIKI
IPC分类号： H01L33/00 , C23C14/34 , C01B21/06 , H01L21/20
CPC分类号： H01L33/007 , C23C14/0078 , C23C14/0641 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 11 using a sputtering method. The apparatus includes: a chamber 41; a target 47 that is arranged in the chamber 41 and includes a group-III element; a first plasma generating means 51 that generates a first plasma for sputtering the target 47 to supply raw material particles to the substrate 11; a second plasma generating means 52 that generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating means 51 and the second plasma generating means 52 to alternately generate the first plasma and the second plasma in the chamber 41.
摘要翻译：本发明提供一种具有高结晶度的III族氮化物半导体层的制造装置。本发明的实施例提供一种使用溅射法在基板11上制造III族氮化物半导体层的装置。该装置包括：室41; 设置在室41中并包括III族元件的靶47; 第一等离子体产生装置51，其产生用于溅射靶47以将原料颗粒供应到基板11的第一等离子体; 第二等离子体产生装置52，其产生包括氮元素的第二等离子体; 以及控制装置，其控制第一等离子体产生装置51和第二等离子体产生装置52，以在腔室41中交替地产生第一等离子体和第二等离子体。

13. 发明授权

US07521777B2 Gallium nitride-based compound semiconductor multilayer structure and production method thereof 有权
标题翻译：氮化镓基化合物半导体多层结构及其制备方法
公开(公告)号：US07521777B2
公开(公告)日：2009-04-21
申请号：US11392767
申请日：2006-03-30
申请人： Hisao Sato , Hisayuki Miki
发明人： Hisao Sato , Hisayuki Miki
IPC分类号： H01L21/4763
CPC分类号： H01L29/2003 , H01L33/06 , H01L33/32
摘要： The object of the present invention is to provide a gallium nitride-based compound semiconductor multilayer structure useful for manufacturing a gallium nitride-based compound semiconductor light-emitting device which requires a low operating voltage and from which a good emission output can be obtained. The present gallium nitride-based compound semiconductor multilayer structure comprises a substrate having thereon an n-type layer, a light-emitting layer and a p-type layer, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly and the light-emitting layer being provided between the n-type layer and the p-type layer, wherein the well layers consisting of the multiple quantum well structure comprise a well layer having an ununiform thickness and a well layer having a uniform thickness.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体多层结构，其可用于制造氮化镓系化合物半导体发光装置，该氮化镓系化合物半导体发光装置需要低的工作电压，并且能够获得良好的发光输出。目前的氮化镓系化合物半导体多层结构体包括其上具有n型层，发光层和p型层的衬底，所述发光层具有多量子阱结构，其中阱层和阻挡层被重复地交替层叠并且发光层设置在n型层和p型层之间，其中由多量子阱结构构成的阱层包括具有不均匀厚度的阱层和阱层具有均匀的厚度。

14. 发明授权

US07482635B2 Gallium nitride-based compound semiconductor multilayer structure and production method thereof 有权
标题翻译：氮化镓基化合物半导体多层结构及其制备方法
公开(公告)号：US07482635B2
公开(公告)日：2009-01-27
申请号：US10589610
申请日：2005-02-23
申请人： Masato Kobayakawa , Hitoshi Takeda , Hisayuki Miki , Tetsuo Sakurai
发明人： Masato Kobayakawa , Hitoshi Takeda , Hisayuki Miki , Tetsuo Sakurai
IPC分类号： H01L29/221 , H01L33/00 , H01L29/225
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/06 , H01L33/24
摘要： An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output.The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.
摘要翻译：本发明的目的是提供一种氮化镓化合物半导体多层结构，其可用于制造在低电压下工作并保持良好的发光输出的氮化镓化合物半导体发光器件。本发明的氮化镓化合物半导体多层结构包括基板，形成在基板上的n型层，发光层和p型层，所述发光层具有多量子阱结构，其中，阱层和阻挡层重复交替层叠，所述发光层被n型层和p型层夹持，其中阱层包括厚部和薄部，阻挡层含有掺杂剂。

15. 发明申请

US20080076200A1 Method for Fabrication Group III Nitride Semiconductor 失效
标题翻译：第III组氮化物半导体制造方法
公开(公告)号：US20080076200A1
公开(公告)日：2008-03-27
申请号：US11662474
申请日：2005-09-12
申请人： Masato Kobayakawa , Hisayuki Miki
发明人： Masato Kobayakawa , Hisayuki Miki
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.
摘要翻译：制造III族氮化物半导体的方法包括以下步骤：在反应容器中安装衬底，在衬底上形成III族氮化物半导体，使固体氮化合物存在于反应容器中作为氮源 III族氮化物半导体，并将作为第III族元素的源的原料气体供给到反应容器中以制造III族氮化物半导体。

16. 发明申请

US20080048172A1 Gallium Nitride-Based Compound Semiconductor Light-Emitting Device 审中-公开
标题翻译：基于氮化镓的复合半导体发光器件
公开(公告)号：US20080048172A1
公开(公告)日：2008-02-28
申请号：US10586909
申请日：2005-01-28
申请人： Noritaka Muraki , Munetaka Watanabe , Hisayuki Miki , Yasushi Ohno
发明人： Noritaka Muraki , Munetaka Watanabe , Hisayuki Miki , Yasushi Ohno
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/42
摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emiting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.
摘要翻译：氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层构成的量子阱结构的结晶性基板（10），发光层（15）所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17）欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。欧姆电极相对于从发光层发射的光呈现透光性。阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

17. 发明申请

US20080042159A1 Transparent Electrode for Semiconductor Light-Emitting Device 有权
标题翻译：用于半导体发光器件的透明电极
公开(公告)号：US20080042159A1
公开(公告)日：2008-02-21
申请号：US11659360
申请日：2005-07-27
申请人： Nobuo Eitoh , Noritaka Muraki , Hisayuki Miki , Munetaka Watanabe
发明人： Nobuo Eitoh , Noritaka Muraki , Hisayuki Miki , Munetaka Watanabe
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/42 , H01L33/32
摘要： A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.
摘要翻译：用于氮化镓基化合物半导体发光器件的透明电极包括p型半导体层（5），在p型半导体层上由欧姆接触形成的接触金属层（1），电流扩散层 12），形成在所述接触金属层上，并且在所述透明电极的平面上的电阻率比接触金属低，并且形成在所述电流扩散层上的接合焊盘（13）。透明电极在扩大p型半导体层的发光表面方面具有优点，降低了正向的工作电压，能够提供优异的粘合强度。

18. 发明申请

US20060175682A1 Transparent electrode 有权
标题翻译：透明电极
公开(公告)号：US20060175682A1
公开(公告)日：2006-08-10
申请号：US11348486
申请日：2006-02-07
申请人： Noritaka Muraki , Munetaka Watanabe , Yasushi Ohono , Hisayuki Miki
发明人： Noritaka Muraki , Munetaka Watanabe , Yasushi Ohono , Hisayuki Miki
IPC分类号： H01L31/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/40
摘要： A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a current diffusion layer disposed on the metal layer. The transparent electrode contains substantially no Au in the whole region thereof. The metal layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component. The current diffusion layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component except for the case where the metal layer and the current diffusion layer have the same composition. It is possible to provide a white light-emitting device provided with the transparent electrode, a white light-emitting lamp using the white light-emitting device and a lighting fixture using the white light-emitting lamp.
摘要翻译：用于发射波长为440nm以下的氮化镓系化合物半导体发光元件的透明电极包括与p型半导体层相邻设置的金属层和设置在金属上的电流扩散层层。透明电极在其整个区域基本上不含Au。金属层含有选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。除了金属层和电流扩散层具有相同组成的情况之外，电流扩散层包含选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。可以提供一种设置有透明电极的白色发光装置，使用白色发光装置的白色发光灯和使用白色发光灯的照明器具。

19. 发明申请

US20050227453A1 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer 有权
标题翻译： III族氮化物半导体晶体，其制造方法和III族氮化物半导体外延片
公开(公告)号：US20050227453A1
公开(公告)日：2005-10-13
申请号：US10504584
申请日：2003-02-14
申请人： Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
发明人： Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
IPC分类号： C30B29/38 , C23C16/34 , C30B23/00 , C30B25/00 , C30B25/02 , C30B25/14 , C30B28/12 , C30B28/14 , H01L21/20 , H01L21/205 , H01L21/76 , H01L33/00 , H01L33/12 , H01L33/32 , H01L33/38 , H01L33/42 , H01S5/323 , H01S5/343
CPC分类号： C30B25/02 , C30B25/00 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/38 , H01L33/42
摘要： A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.
摘要翻译：制备III族氮化物半导体晶体的方法包括以0至1000的V / III比率供应第III族原料和V族原料的第一步骤，以在加热的衬底上形成和生长III族氮化物半导体以及使用III族原料和氮原料在基板上气相生长III族氮化物半导体晶体的第二工序。

20. 发明授权

US06268618B1 Electrode for light-emitting semiconductor devices and method of producing the electrode 失效
标题翻译：用于发光半导体器件的电极及其制造方法
公开(公告)号：US06268618B1
公开(公告)日：2001-07-31
申请号：US09073765
申请日：1998-05-07
申请人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
发明人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2933/0016 , H01L2924/00
摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.
摘要翻译：用于发光半导体器件的电极包括形成为与半导体的表面接触的透光电极和与透光电极电接触并形成的导线接合电极与半导体的表面部分接触，至少与半导体接触的区域相对于半导体具有比单位面积的接触电阻高于与半导体接触的透光性电极的区域。该器件电极通过在p型GaN基化合物半导体的表面的一部分上形成引线键合电极而形成，在半导体的表面上形成第一层，该第一层为选自以下的至少一种：由Au，Pt和Pd组成，并且形成为在引线接合电极所在的部分覆盖引线接合电极的上表面，在第一层上形成至少一种选择的金属的第二层从由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的组中，通过在包含氧的气氛中对第一层和第二层进行热处理而形成透光性电极。

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