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11. 发明申请

US20130026470A1 WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE 有权
标题翻译：接线结构，显示设备和半导体器件
公开(公告)号：US20130026470A1
公开(公告)日：2013-01-31
申请号：US13639028
申请日：2011-03-30
申请人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
发明人： Yasuaki Terao , Shinya Morita , Aya Miki , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L29/16
CPC分类号： H01L23/53238 , H01L21/28518 , H01L21/28556 , H01L21/3211 , H01L21/76867 , H01L27/124 , H01L29/458 , H01L29/4958 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer.
摘要翻译：公开了即使消除通常设置在Cu合金布线膜和半导体层之间的阻挡金属层以及具有优异的粘附性的布线结构，也可以获得优异的低接触电阻的布线结构。布线结构在基板上依次从基板侧设置有半导体层和Cu合金层。在半导体层和Cu合金层之间包含层叠结构。层叠结构由含有选自氮，碳，氟和氧中的至少一种元素的（N，C，F，O）层构成，Cu-Si扩散层包含Cu和 Si，从衬底侧依次。构成（N，C，F，O）层的由氮，碳，氟和氧构成的组中的至少一种元素与半导体层中的Si键合。 Cu合金层是含有Cu-X合金层（第一层）和第二层的层叠结构。

12. 发明申请

US20120301732A1 AL ALLOY FILM FOR USE IN DISPLAY DEVICE 审中-公开
标题翻译： AL合金膜用于显示器件
公开(公告)号：US20120301732A1
公开(公告)日：2012-11-29
申请号：US13576053
申请日：2011-02-16
申请人： Hiroyuki Okuno , Toshihiro Kugimiya , Hiroshi Goto
发明人： Hiroyuki Okuno , Toshihiro Kugimiya , Hiroshi Goto
IPC分类号： C22C21/00 , B32B15/04 , C23C14/14
CPC分类号： C23C14/165 , H01L27/124 , H01L29/458 , H01L29/4908 , Y10T428/31678
摘要： Disclosed is an Al alloy film for use in a display device, which does not undergo the formation of hillocks even when exposed to high temperatures of about 450° C. to 600° C., and has excellent high-temperature heat resistance, low electrical resistance (wiring resistance) and excellent corrosion resistance under alkaline environments. Specifically disclosed is an Al alloy film for use in a display device, which comprises at least one element selected from a group X consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf and Ti and at least one rare earth element, and which meets the following requirement (1) when heated at 450° C. to 600° C. (1) Precipitates each having an equivalent circle diameter of 20 nm or more are present at a density of 500,000 particles/mm2 or more in a first precipitation product containing at least one element selected from Al and the elements included in the group X and at least one rare earth element.
摘要翻译：公开了一种用于显示装置的Al合金膜，其即使在暴露于约450℃至600℃的高温下也不会形成小丘，并且具有优异的高温耐热性，低电电阻（接线电阻）和在碱性环境下优异的耐腐蚀性。具体公开了一种用于显示装置的Al合金膜，其包括从由Ta，Nb，Re，Zr，W，Mo，V，Hf和Ti组成的组X中选择的至少一种元素和至少一种稀土元素，并且在450℃〜600℃下加热时满足以下要求（1）。（1）以50万个/ mm 2以上的密度存在各自具有20nm以上的当量圆直径的析出物在含有选自Al中的至少一种元素和包含在基团X中的元素和至少一种稀土元素的第一沉淀产物中。

13. 发明申请

US20120285928A1 METHOD OF FORMING MICROPATTERN, DIE FORMED BY THIS METHOD OF FORMING MICROPATTERN, TRANSFER METHOD AND MICROPATTERN FORMING METHOD USING THIS DIE 有权
公开(公告)号：US20120285928A1
公开(公告)日：2012-11-15
申请号：US13555781
申请日：2012-07-23
申请人： Hiroshi Goto , Hiroshi Okuyama , Mitsunori Kokubo , Kentaro Ishibashi
发明人： Hiroshi Goto , Hiroshi Okuyama , Mitsunori Kokubo , Kentaro Ishibashi
IPC分类号： H01L21/302 , B28B11/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A micropattern is joined to a substrate (W1) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.

14. 发明申请

US20120285927A1 METHOD OF FORMING MICROPATTERN, DIE FORMED BY THIS METHOD OF FORMING MICROPATTERN, TRANSFER METHOD AND MICROPATTERN FORMING METHOD USING THIS DIE 有权
公开(公告)号：US20120285927A1
公开(公告)日：2012-11-15
申请号：US13555768
申请日：2012-07-23
申请人： HIROSHI GOTO , HIROSHI OKUYAMA , MITSUNORI KOKUBO , KENTARO ISHIBASHI
发明人： HIROSHI GOTO , HIROSHI OKUYAMA , MITSUNORI KOKUBO , KENTARO ISHIBASHI
IPC分类号： H01L21/302 , B28B11/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A micropattern is joined to a substrate (W1) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.

15. 发明申请

US20120234868A1 CAP FOR SQUEEZE CONTAINER 审中-公开
标题翻译： CAP SQUEEZE CONTAINER
公开(公告)号：US20120234868A1
公开(公告)日：2012-09-20
申请号：US13501058
申请日：2010-10-08
申请人： Shinichi Inaba , Hiroshi Goto , Michiaki Fujita , Mitsugu Iwatsubo
发明人： Shinichi Inaba , Hiroshi Goto , Michiaki Fujita , Mitsugu Iwatsubo
IPC分类号： B65D37/00 , B65D5/72
CPC分类号： B65D47/06 , B05B1/3415 , B05B11/04 , B65D1/323
摘要： In a cap (10) for a squeeze container to discharge content liquid from a top discharge opening (13) with squeeze deformation of a barrel section (12b) of a container body (12) to be used as being attached to a mouth neck section (12a) of the container body (12) made of plastic as being squeeze-deformable, at least a part of a liquid flow path from the mouth neck section (12a) of the container body (12) to the discharge opening (13) is formed as a helical flow path (15). The helical flow path (15) includes a bottom face section (15a) which is formed to have declination toward the barrel section (12b) of the container body (12) in an erected state of the squeeze container (11). The helical flow path (15) is formed by a helical tube (14) which is arranged inside the cap (10) for a squeeze container, for example.
摘要翻译：在用于挤压容器的盖（10）中，用于从容器主体（12）的筒部（12b）的挤压变形而从顶部排出口（13）排出内部液体，以用作附接到口颈部（12）的容器主体（12）的可挤压变形的液体流路的至少一部分从容器主体（12）的口颈部（12a）到排出口（13）的至少一部分，形成为螺旋流路（15）。螺旋流路（15）包括底面部（15a），其形成为在挤压容器（11）的竖立状态下朝向容器主体（12）的筒部（12b）倾斜。螺旋流路（15）由螺旋管（14）形成，该螺旋管例如布置在盖（10）内用于挤压容器。

16. 发明申请

US20120119207A1 INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING INTERCONNECTION STRUCTURE 审中-公开
标题翻译：互连结构及其制造方法以及包括互连结构的显示装置
公开(公告)号：US20120119207A1
公开(公告)日：2012-05-17
申请号：US13387522
申请日：2010-07-27
申请人： Hiroshi Goto , Takeaki Maeda
发明人： Hiroshi Goto , Takeaki Maeda
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L29/7869 , H01L29/45
摘要： Disclosed is an interconnection structure which, in a display device such as an organic EL display and a liquid crystal display, is capable of stably connecting a semiconductor layer directly to an Al-base film constituting, for example, a source electrode or a drain electrode; and which hardly causes galvanic corrosion between the semiconductor layer and the Al-base film in an electrolyte solution to be used in a wet process and is able to suppress stripping of the Al-base film. It is an interconnection structure including a semiconductor layer of a thin-film transistor and an Al alloy film connected directly to the semiconductor layer above a substrate in this order from the side of the substrate, wherein the semiconductor layer is composed of an oxide semiconductor, and the Al alloy film contains at least one of Ni and Co.
摘要翻译：公开了一种互连结构，其在诸如有机EL显示器和液晶显示器的显示装置中能够将半导体层直接连接到构成例如源电极或漏极的Al基膜 ; 并且在湿法中使用的电解质溶液中的半导体层和Al基膜之间几乎不引起电偶腐蚀，并且能够抑制Al基膜的剥离。它是一种互连结构，其包括薄膜晶体管的半导体层和从衬底侧直接连接到衬底上方的半导体层的Al合金膜，其中半导体层由氧化物半导体构成，并且Al合金膜含有Ni和Co中的至少一种

17. 发明授权

US08163143B2 Al-Ni-La-Si system Al-based alloy sputtering target and process for producing the same 有权
标题翻译： Al-Ni-La-Si系Al基合金溅射靶及其制造方法
公开(公告)号：US08163143B2
公开(公告)日：2012-04-24
申请号：US12172442
申请日：2008-07-14
申请人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
发明人： Katsutoshi Takagi , Yuki Iwasaki , Masaya Ehira , Akira Nanbu , Mototaka Ochi , Hiroshi Goto , Nobuyuki Kawakami
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.
摘要翻译：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度）用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上，和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

18. 发明授权

US08090187B2 Pattern inspection method and its apparatus 有权
标题翻译：图案检验方法及其装置
公开(公告)号：US08090187B2
公开(公告)日：2012-01-03
申请号：US12725040
申请日：2010-03-16
申请人： Kaoru Sakai , Shunji Maeda , Takafumi Okabe , Hiroshi Goto , Masayuki Kuwabara , Naoya Takeuchi
发明人： Kaoru Sakai , Shunji Maeda , Takafumi Okabe , Hiroshi Goto , Masayuki Kuwabara , Naoya Takeuchi
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T7/0002 , G06T7/32 , G06T7/33 , G06T2207/30148
摘要： A pattern inspection method including: sequentially imaging plural chip formed on a substrate; selecting at least one of pattern sections of each inspection image obtained by the imaging, while discarding other pattern sections, based on a recipe created in advance, the recipe including information for determining which pattern sections to be selected or discarded; calculating position gap between an inspection image of a chip obtained by the imaging and a reference image stored in a memory by using positional information of pattern images included in the inspection image and reference pattern images which are both corresponding to the at least one of pattern sections selected at the selecting; aligning the inspection image and the reference image by using information of the calculated position gap; and comparing the aligned inspection image with the reference image, and extracting a difference between the two images as a defect candidate.
摘要翻译：一种图案检查方法，包括：顺序成像形成在基板上的多个芯片; 选择通过成像获得的每个检查图像的图案部分中的至少一个，同时基于预先创建的食谱来丢弃其他图案部分，所述配方包括用于确定要选择或丢弃的图案部分的信息; 通过使用包括在检查图像中的图案图像的位置信息和对应于图案部分中的至少一个的参考图案图像来计算通过成像获得的芯片的检查图像与存储在存储器中的参考图像之间的位置间隙选择选择; 通过使用计算出的位置间隙的信息对准检查图像和参考图像; 以及将对准的检查图像与参考图像进行比较，并且将两个图像之间的差提取为缺陷候选。

19. 发明申请

US20110248272A1 ORGANIC EL DISPLAY DEVICE REFLECTIVE ANODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：有机EL显示装置反射阳极及其制造方法
公开(公告)号：US20110248272A1
公开(公告)日：2011-10-13
申请号：US13126126
申请日：2009-11-09
申请人： Mototaka Ochi , Hiroshi Goto , Tomoya Kishi , Nobuyuki Kawakami
发明人： Mototaka Ochi , Hiroshi Goto , Tomoya Kishi , Nobuyuki Kawakami
IPC分类号： H01L29/786 , C23C14/34 , H01L33/60
CPC分类号： H01L51/5218 , H01L27/3244 , H01L2251/5315
摘要： Provided is a reflective anode for an organic EL display device having a reflective film made from an Al-based alloy which can realize a low contact resistance with an oxide conductive film and achieve an excellent reflectivity. Provided is also a method for manufacturing the reflective anode for an organic EL display device. The method includes: a step of forming an Al-based alloy film containing 0.1 to 2 atomic % of Ni or Co on a substrate; a step of subjecting the Al-based alloy film to a thermal treatment in a vacuum or an inactive gas atmosphere at the temperature of 150 degrees C. or above; and a step of forming an oxide conductive film so as to be in direct contact with the Al-based alloy film.
摘要翻译：本发明提供一种有机EL显示装置的反射性阳极，其具有由Al系合金制成的反射膜，该反射膜能够实现与氧化物导电膜的低接触电阻，并获得良好的反射率。还提供了一种用于制造有机EL显示装置的反射式阳极的方法。该方法包括：在基板上形成含有0.1〜2原子％的Ni或Co的Al系合金膜的工序; 在150℃以上的温度下在真空或惰性气体气氛中对Al系合金膜进行热处理的工序; 以及形成与Al系合金膜直接接触的氧化物导电膜的工序。

20. 发明申请

US20110147753A1 DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET 审中-公开
标题翻译：显示器件，铜合金膜及铜合金溅射靶
公开(公告)号：US20110147753A1
公开(公告)日：2011-06-23
申请号：US13056444
申请日：2009-08-14
申请人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
发明人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
IPC分类号： H01L29/04 , B32B17/06
CPC分类号： H01L23/53233 , C22C9/00 , C22C9/01 , H01L27/124 , H01L2924/0002 , Y10T428/265 , H01L2924/00
摘要： Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.
摘要翻译：公开了一种用于显示装置的Cu合金膜，其在保持Cu基材料的低电阻特性的同时对玻璃基板具有高粘附性。 Cu合金膜是与板上的玻璃基板直接接触的布线，并且含有0.1〜10.0原子％的一种以上选自Ti，Al，Mg的元素。还公开了包括包含Cu合金膜的薄膜晶体管的显示装置。在显示装置的优选实施例中，薄膜晶体管具有底栅型结构，并且薄膜晶体管中的栅电极和扫描线包括Cu合金膜并与玻璃基板直接接触。

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