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11. 发明授权

US09093316B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09093316B2
公开(公告)日：2015-07-28
申请号：US13475365
申请日：2012-05-18
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/3205 , H01L27/115 , H01L21/74 , H01L21/768 , H01L23/48 , H01L27/12 , H01L27/22 , H01L27/24 , H01L21/8238 , H01L45/00
CPC分类号： H01L27/11507 , H01L21/74 , H01L21/76895 , H01L21/823814 , H01L23/481 , H01L27/1203 , H01L27/228 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.
摘要翻译：半导体器件包括：形成在衬底的前表面的扩散层; 在扩散层的前表面形成低电阻部分以具有低于扩散层的电阻; 以及从基板的后表面穿过基板的后接触电极，以通过扩散层连接到低电阻部分。

12. 发明申请

US20120130082A1 1-Substituted-4-Nitroimidazole Compound and Method for Preparing the Same 审中-公开
标题翻译： 1-取代的4-硝基咪唑化合物及其制备方法
公开(公告)号：US20120130082A1
公开(公告)日：2012-05-24
申请号：US13362646
申请日：2012-01-31
申请人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka GOTO , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D405/06 , C07D233/92 , C07D233/84
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH2RA的基团; X是卤素原子或基团-S（O）n -R1）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

13. 发明申请

US20100140617A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20100140617A1
公开(公告)日：2010-06-10
申请号：US12629150
申请日：2009-12-02
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L29/78 , H01L21/66 , H01L23/544
CPC分类号： H01L27/105 , H01L21/84 , H01L22/14 , H01L22/20 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L27/1203 , H01L29/78 , H01L29/7855
摘要： A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage.
摘要翻译：半导体器件制造方法包括以下步骤：在绝缘体上硅衬底的硅层的表面侧上形成晶体管，绝缘体上硅衬底通过层叠衬底，绝缘层和硅层; 形成覆盖晶体管的第一绝缘膜和包括与绝缘体上硅基板上的晶体管电连接的部分的布线部分; 通过所述布线部分测量所述晶体管的阈值电压; 在所述第一绝缘膜的表面上形成支撑衬底，其中所述第二绝缘膜置于所述支撑衬底和所述第一绝缘膜之间; 在绝缘体上硅衬底的背面去除衬底和绝缘层的至少一部分; 以及基于测量的阈值电压来调整晶体管的阈值电压。

14. 发明申请

US20090264404A1 Derivatives of 4-piperazin-1-yl-4-benzo[b]thiophene suitable for the treatment of cns disorders 有权
标题翻译：适用于治疗cns病症的4-哌嗪-1-基-4-苯并[b]噻吩的衍生物
公开(公告)号：US20090264404A1
公开(公告)日：2009-10-22
申请号：US11991146
申请日：2006-08-31
申请人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
发明人： Hiroshi Yamashita , Hideaki Kuroda , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Haruka Takahashi , Tae Fukushima , Satoshi Shimizu , Kazumi Kondo , Yohji Sakurai , Takeshi Kuroda , Shinichi Taira , Motohiro Itotani , Tatsuyoshi Tanaka
IPC分类号： A61K31/496 , C07D409/14 , C07D265/36 , C07D223/08 , C07D243/08 , C07D267/14 , A61K31/536 , A61K31/55 , A61K31/551 , A61K31/553 , A61K31/397 , A61P25/00
CPC分类号： C07D409/12 , C07D333/54 , C07D407/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/08 , C07D491/113
摘要： A heterocyclic compound or a salt thereof represented by the formula (1): where R2 represents a hydrogen atom or a lower alkyl group; A represents a lower alkylene group or lower alkenylene group; and R1 represents an aromatic group or a heterocyclic group. The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.
摘要翻译：由式（1）表示的杂环化合物或其盐：其中R 2表示氢原子或低级烷基; A表示低级亚烷基或低级亚烯基; R1表示芳基或杂环基。本发明的化合物具有广泛的精神障碍治疗范围，包括中枢神经系统疾病，无副作用和高安全性。

15. 发明申请

US20080218031A1 Electroacoustic Transducer 有权
标题翻译：电声传感器
公开(公告)号：US20080218031A1
公开(公告)日：2008-09-11
申请号：US12126022
申请日：2008-05-23
申请人： Hideaki Kuroda , Yoshihiro Sonoda
发明人： Hideaki Kuroda , Yoshihiro Sonoda
IPC分类号： H04R17/00
CPC分类号： H04R17/10
摘要： An electroacoustic transducer having one end portion of a first piezoelectric element and one end portion of a second piezoelectric element fixed to a frame such that the first piezoelectric element and the second piezoelectric element are supported by the frame in an opening of the frame in the cantilever manner. A flexible thin film is bonded to the frame and the first and second piezoelectric elements so that it covers at least a gap between each of the piezoelectric elements and the frame. The other end portions of the piezoelectric elements are free end portions, and face each other with a gap therebetween.
摘要翻译：一种电声换能器，其具有第一压电元件的一个端部和固定到框架的第二压电元件的一个端部，使得第一压电元件和第二压电元件由框架支撑在悬臂中的框架的开口中方式。柔性薄膜结合到框架和第一和第二压电元件，使得它覆盖每个压电元件和框架之间的至少一个间隙。压电元件的另一端部是自由端部，并且彼此面对地间隔开。

16. 发明授权

US06583490B2 One time programmable semiconductor nonvolatile memory device and method for production of same 有权
公开(公告)号：US06583490B2
公开(公告)日：2003-06-24
申请号：US09888534
申请日：2001-06-26
申请人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
发明人： Yoshiaki Hagiwara , Hideaki Kuroda , Michitaka Kubota , Akira Nakagawara
IPC分类号： H01L2900
CPC分类号： G11C17/16 , G11C2213/33 , G11C2213/71 , G11C2213/77 , G11C2213/79 , H01L27/112 , H01L2224/48091 , H01L2225/06568 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

17. 发明授权

US5825059A Semiconductor device and an interconnection structure of same 失效
标题翻译：半导体器件及其互连结构
公开(公告)号：US5825059A
公开(公告)日：1998-10-20
申请号：US791271
申请日：1997-01-30
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8242 , H01L27/108 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L29/41775 , H01L29/456
摘要： A connection hole of a semiconductor device having a structure of preventing the connection hole from being short-circuited or degraded in dielectric strength even if there occurs misalignment when an opening portion is formed in an interlayer insulating film at a position over a conductive layer for forming the opening portion. The connection hole includes an inner wall on which an insulating film protected by a side wall made from non-crystal silicon is formed.
摘要翻译：即使在形成导电层的位置上的层间绝缘膜中形成开口部时发生未对准的结构，也可以使用具有防止连接孔短路或劣化的结构的半导体装置的连接孔开口部分。连接孔包括内壁，其上形成有由非晶硅制成的侧壁保护的绝缘膜。

18. 发明授权

US09260420B2 Piperazine-substituted benzothiophene derivatives as antipsychotic agents 有权
标题翻译：哌嗪取代的苯并噻吩衍生物作为抗精神病药
公开(公告)号：US09260420B2
公开(公告)日：2016-02-16
申请号：US14343579
申请日：2012-09-07
申请人： Hiroshi Yamashita , Yohji Sakurai , Motoyuki Miyamoto , Yuichi Nakamura , Hideaki Kuroda , Takuya Minowa
发明人： Hiroshi Yamashita , Yohji Sakurai , Motoyuki Miyamoto , Yuichi Nakamura , Hideaki Kuroda , Takuya Minowa
IPC分类号： C07D409/12 , C07D409/14
CPC分类号： A61K31/496 , A61K31/501 , A61K31/506 , A61K31/5377 , A61K31/541 , A61K31/675 , A61K31/695 , C07D409/12 , C07D409/14
摘要： Provided is a superior, novel heterocyclic compound with improved solubility in oil such as sesame oil and benzyl benzoate, which has a broader treatment spectrum, causes less side effects, and is superior in tolerability and safety, and use thereof. A heterocyclic compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.
摘要翻译：本发明提供一种具有较好的溶解度的优异的新型杂环化合物，如芝麻油和苯甲酸苄酯，其处理范围更广，副作用更小，耐受性和安全性优异，且使用方便。由式（I）表示的杂环化合物，其中每个符号如说明书中所定义，或其盐。

19. 发明授权

US08860149B2 Semiconductor device manufacturing method and semiconductor device 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08860149B2
公开(公告)日：2014-10-14
申请号：US13544036
申请日：2012-07-09
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L27/088 , H01L21/66 , H01L27/105 , H01L27/12 , H01L21/84 , H01L27/11 , H01L29/78
CPC分类号： H01L27/105 , H01L21/84 , H01L22/14 , H01L22/20 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L27/1203 , H01L29/78 , H01L29/7855
摘要： A semiconductor device including a transistor formed on a first surface of a silicon layer; a first insulating film formed on the first surface of said silicon layer and covering said transistor; a wiring section formed in the first insulating film and electrically connected to the transistor; a supporting substrate formed on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; and an adjusting insulating film for adjusting a threshold voltage of said transistor, the adjusting insulating film being formed on a second surface of said silicon layer opposing the first surface of said silicon layer. Some embodiments may include a probing electrode electrically connected to the transistor and an opening in the silicon layer for exposing the probing electrode.
摘要翻译：一种半导体器件，包括形成在硅层的第一表面上的晶体管; 形成在所述硅层的第一表面上并覆盖所述晶体管的第一绝缘膜; 形成在第一绝缘膜中并与晶体管电连接的布线部分; 支撑基板，形成在第一绝缘膜的表面上，第二绝缘膜介于支撑基板和第一绝缘膜之间; 以及用于调节所述晶体管的阈值电压的调整绝缘膜，所述调整绝缘膜形成在所述硅层的与所述硅层的第一表面相对的第二表面上。一些实施例可以包括电连接到晶体管的探测电极和用于暴露探测电极的硅层中的开口。

20. 发明申请

US20120231620A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120231620A1
公开(公告)日：2012-09-13
申请号：US13475365
申请日：2012-05-18
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/28
CPC分类号： H01L27/11507 , H01L21/74 , H01L21/76895 , H01L21/823814 , H01L23/481 , H01L27/1203 , H01L27/228 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers.
摘要翻译：半导体器件包括：形成在衬底前表面的扩散层; 在扩散层的前表面形成低电阻部分以具有低于扩散层的电阻; 以及从基板的后表面穿过基板的后接触电极，以通过扩散层连接到低电阻部分。

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