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11. 发明申请

US20100078578A1 METHOD AND ARRANGEMENT FOR THE OPERATION OF PLASMA-BASED SHORT-WAVELENGTH RADIATION SOURCES 审中-公开
标题翻译：基于等离子体的短波辐射源的运行方法和布置
公开(公告)号：US20100078578A1
公开(公告)日：2010-04-01
申请号：US12563305
申请日：2009-09-21
申请人： Max Christian Schuermann , Boris Tkachenko , Denis Bolshukhin , Juergen Kleinschmidt , Guido Schriever
发明人： Max Christian Schuermann , Boris Tkachenko , Denis Bolshukhin , Juergen Kleinschmidt , Guido Schriever
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70841 , G03F7/70916
摘要： The invention is directed to a method for operating plasma-based short-wavelength radiation sources, particularly EUV radiation sources, having a long lifetime and to an arrangement for generating plasma-based short-wavelength radiation. It is the object of the invention to find a novel possibility for operating plasma-based short-wavelength radiation sources with a long lifetime which permits extensive debris mitigation without the main process of radiation generation being severely impaired through the use of buffer gas and without the need for substantial additional expenditure for generating partial pressure in a spatially narrowly limited manner. According to the invention, this object is met in that hydrogen gas as buffer gas (41) is introduced into the vacuum chamber (1) under a pressure such that a pressure-distance product in the range of 1 to 100 Pa·m is realized while taking into account the geometric radiation paths of the radiation emitted by the emitter plasma (21) within the buffer gas (41; 44), and the vacuum chamber (1) is continuously evacuated for adjusting a quasistatic pressure (42; 47) and for removing residual emitter material and buffer gas (41).
摘要翻译：本发明涉及一种用于操作具有长寿命的基于等离子体的短波长辐射源，特别是EUV辐射源的方法和用于产生基于等离子体的短波长辐射的装置。本发明的目的是找到一种具有长寿命的基于等离子体的短波长辐射源的新型可能性，其允许广泛的碎片减轻，而不会通过使用缓冲气体严重损害主要的辐射发生过程，而不需要需要在空间狭窄限制的方式产生分压的大量额外支出。根据本发明，通过将氢气作为缓冲气体（41）在压力范围为1〜100Pa·m的压力下被引入真空室（1）中，同时考虑由缓冲气体（41; 44）内的发射体等离子体（21）发射的辐射的几何辐射路径，并且真空室（1）被连续抽真空以调节准静压（42; 47）和用于去除残留的发射体材料和缓冲气体（41）。

12. 发明授权

US06894298B2 Arrangement for generating extreme ultraviolet (EUV) radiation based on a gas discharge 有权
标题翻译：基于气体放电产生极紫外（EUV）辐射的装置
公开(公告)号：US06894298B2
公开(公告)日：2005-05-17
申请号：US10267373
申请日：2002-10-09
申请人： Imtiaz Ahmad , Guido Schriever , Juergen Kleinschmidt
发明人： Imtiaz Ahmad , Guido Schriever , Juergen Kleinschmidt
IPC分类号： G21K5/00 , G03F7/20 , G21K5/02 , H01L21/027 , H05G2/00 , H05H1/24 , B23K10/00
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005
摘要： The invention is directed to a method and an arrangement for generating extreme ultraviolet (EUV) radiation, i.e., radiation of high-energy photons in the wavelength range from 11 to 14 nm, based on a gas discharge. The object of the invention, to find a novel possibility for generating EUV radiation in which an extended life of the system is achieved with stable generation of a dense, hot plasma column, is met according to the invention in that a preionization discharge is ignited between two parallel disk-shaped flat electrodes prior to the main discharge by a surface discharge along the superficies surface of a cylindrical insulator with a plasma column generated through the gas discharge with pulsed direct voltage, which preionization discharge carries out an ionization of the working gas in the discharge chamber by means of fast charged particles. The preionization discharge is triggered within a first electrode housing and the main discharge takes place between a narrowed output of the first electrode housing and a part of the second electrode housing close to the outlet opening of the discharge chamber. The plasma develops in a part of the second electrode housing covered by a tubular insulator and, as a result of the current-induced magnetic field, contracts to form a dense, hot plasma column, one end of which is located in the vicinity of the outlet opening of the second electrode housing.
摘要翻译：本发明涉及一种基于气体放电产生极紫外（EUV）辐射，即在11至14nm波长范围内的高能量光子辐射的方法和装置。本发明的目的是为了发现产生EUV辐射的新型可能性，其中通过稳定产生致密的热等离子体柱来实现系统的延长的使用寿命，根据本发明，可以在两个平行的圆盘形扁平电极在主要放电之前，沿着具有脉冲直流电压通过气体放电产生的等离子体柱的圆柱形绝缘子的表面放电表面放电，该前置放电执行工作气体的离子化放电室通过快速带电粒子。预除电放电在第一电极壳体内触发，并且主放电发生在第一电极壳体的变窄的输出端和靠近放电室的出口的第二电极壳体的一部分之间。等离子体在由管状绝缘体覆盖的第二电极壳体的一部分中产生，并且由于电流感应磁场的结果而收缩以形成致密的热等离子体柱，其一端位于第二电极壳体的出口开口。

13. 发明授权

US06855932B2 Detector arrangement for energy measurement of pulsed x-ray radiation 有权
标题翻译：用于脉冲X射线辐射能量测量的检测器布置
公开(公告)号：US06855932B2
公开(公告)日：2005-02-15
申请号：US10393930
申请日：2003-03-20
申请人： Guido Schriever , Juergen Kleinschmidt
发明人： Guido Schriever , Juergen Kleinschmidt
IPC分类号： G01J5/00 , G01T1/00 , G01T1/185 , G01T1/29 , G01T1/36
CPC分类号： G01T1/185 , G01T1/29
摘要： The invention is directed to a detector arrangement for energy measurement of pulsed x-ray radiation, particularly for monitoring the energy emitted by pulsed EUV radiation sources. The object of the invention, to find a novel possibility for energy measurement of high-energy x-ray radiation or EUV radiation which permits an accurate monitoring of the radiation dose over the entire life of the radiation source without continual calibration of the radiation detectors, is met according to the invention in that a closed vessel is provided which has an inlet opening for the radiation to be detected, is filled with a suitable gas under defined pressure for absorbing the radiation and has a linear extension, at least in the direction of incidence of the radiation, which is adapted to the absorption behavior of the gas so that the radiation to be detected is absorbed before it can reach a wall of the vessel, and at least one pressure sensor is arranged in the vessel for measuring a pressure wave generated due to the local temperature change occurring as a result of temporary intensive radiation absorption.
摘要翻译：本发明涉及用于脉冲X射线辐射能量测量的检测器装置，特别是用于监测由脉冲EUV辐射源发射的能量。本发明的目的是为了找到能量测量高能X射线辐射或EUV辐射的新颖可能性，其允许在辐射源的整个寿命期内对辐射剂量的精确监测，而不必对辐射探测器进行持续校准，根据本发明满足的是，提供了一个封闭的容器，其具有用于待检测的辐射的入口，在限定的压力下填充合适的气体以吸收辐射并具有线性延伸，至少在辐射的入射率适合于气体的吸收行为，使得待检测的辐射在其可以到达容器的壁之前被吸收，并且至少一个压力传感器布置在容器中用于测量压力波由于临时强烈的辐射吸收而导致局部温度变化而产生。

14. 发明申请

US20090014027A1 METHOD AND ARRANGEMENT FOR CLEANING OPTICAL SURFACES IN PLASMA-BASED RADIATION SOURCES 有权
标题翻译：基于等离子体辐射源清洁光学表面的方法和布置
公开(公告)号：US20090014027A1
公开(公告)日：2009-01-15
申请号：US12128784
申请日：2008-05-29
申请人： GUIDO SCHRIEVER
发明人： GUIDO SCHRIEVER
IPC分类号： B08B7/00
CPC分类号： G03F7/70933 , B08B5/00 , G03F7/70175 , G03F7/70483 , G03F7/70925 , G03F7/70983 , H05H1/2406 , H05H2001/245 , H05H2245/123
摘要： The invention is directed to a method and an arrangement for cleaning optical surfaces of reflection optics which are arranged in a plasma-based radiation source or exposure device arranged downstream and contaminated by debris particles emitted by a hot plasma of the radiation source. It is the object of the invention to find a novel possibility for in-situ cleaning of the optical surfaces of reflection optics which are contaminated by debris in plasma-based radiation sources so as to allow an integrated generation of known gas radicals and the isotropic distribution thereof on the contaminated optical surfaces. According to the invention, this object is met in that the gas radicals are generated by dielectrically impeded discharge between two surface electrodes along the entire optical surface. The gas radicals are generated almost exclusively by electron transfer on at least one barrier layer which covers the entire surface of at least one of the surface electrodes, an AC voltage in the Hz to kHz range is applied to the surface electrodes for periodically eliminating the charge polarization at the barrier layer so that a cold plasma is generated continuously and the deposited debris particles are removed as gaseous reaction products by the gas flow guided over the optical surface.
摘要翻译：本发明涉及一种用于清洁反射光学器件的光学表面的方法和装置，其布置在布置在下游的等离子体辐射源或曝光装置中，并被辐射源的热等离子体发射的碎屑颗粒污染。本发明的目的是找到一种新颖的可能性，用于原位清洁由等离子体辐射源中的碎屑污染的反射光学器件的光学表面，从而允许集成产生已知气体基团和各向同性分布在污染的光学表面上。根据本发明，满足这个目的在于，通过沿着整个光学表面的两个表面电极之间的介电阻碍的放电产生气体自由基。气体自由基几乎完全通过覆盖至少一个表面电极的整个表面的至少一个阻挡层上的电子转移而产生，将Hz至kHz范围内的AC电压施加到表面电极以周期性地消除电荷在阻挡层处的极化，使得连续地产生冷等离子体，并且通过在光学表面上引导的气流，作为气体反应产物除去沉积的碎屑颗粒。

15. 发明授权

US06770896B2 Method for generating extreme ultraviolet radiation based on a radiation-emitting plasma 有权
标题翻译：基于辐射发射等离子体产生极紫外辐射的方法
公开(公告)号：US06770896B2
公开(公告)日：2004-08-03
申请号：US10357173
申请日：2003-02-03
申请人： Guido Schriever
发明人： Guido Schriever
IPC分类号： H05H104
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , H05G2/005
摘要： The invention is directed to a method for generating extreme ultraviolet (EUV) radiation based on a radiation-emitting plasma, particularly for generating EUV radiation with a wavelength around 13 nm. The object of the invention, to find a novel possibility for generating extreme ultraviolet radiation based on a radiation-emitting plasma in which the emission output of the EUV source is increased to the wavelength range above the L-absorption edge of silicon without substantially increasing the technical and monetary expenditure for plasma generation, is met in a method for generating extreme ultraviolet radiation through emission of broadband radiation from a plasma under vacuum conditions in that the plasma is generated using at least one element from V to VII in the p-block of the fifth period of the periodic table of elements. Iodine, tellurium, antimony or materials containing these elements or chemical compounds formed with these elements are preferably used. The invention is advantageously applied in EUV lithography for semiconductor chip fabrication.
摘要翻译：本发明涉及一种用于产生基于辐射发射等离子体的特别用于产生波长约13nm的EUV辐射的极紫外（EUV）辐射的方法。本发明的目的是为了发现基于发射等离子体产生极紫外辐射的新颖可能性，其中EUV源的发射输出增加到高于硅的L-吸收边缘的波长范围，而基本上不增加用于通过在真空条件下从等离子体发射宽带辐射而产生极紫外辐射的方法满足等离子体产生的技术和货币支出，因为等离子体是使用至少一个元素从V至VII生成在p块中的元素周期表的第五个周期。优选使用碘，碲，锑或含有这些元素的材料或由这些元素形成的化合物。本发明有利地应用于用于半导体芯片制造的EUV光刻中。

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