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    • 19. 发明授权
    • Shallow trench isolation process
    • 浅沟槽隔离工艺
    • US5933748A
    • 1999-08-03
    • US775805
    • 1996-12-31
    • George ChouComing Chen
    • George ChouComing Chen
    • H01L21/762H01L21/76
    • H01L21/76237
    • A shallow trench isolation process provides a high quality oxide on the substrate adjacent the trench and on the upper part of the trench. This process avoids the formation of poor quality oxide on the substrate adjacent the upper edge of the trench that is believed to cause MOS transistors to exhibit the undesirable subthreshold current flow known as the "kink" effect. A pad oxide layer is grown on the surface of a silicon substrate and then a layer of silicon nitride is formed on the surface of the pad oxide. A photoresist mask is formed over the silicon nitride and the silicon nitride and pad oxide are etched, and then the substrate is etched to form a trench. The photoresist mask is removed, a layer of polysilicon is deposited over the silicon nitride layer and within the trench and the polysilicon layer is oxidized. CVD oxide is deposited to overfill the trench and then the excess CVD oxide and polysilicon oxide is removed by CMP, using the silicon nitride layer as an polish stop. The silicon nitride is stripped and the trench oxide is etched using an HF dip to provide a substantially planar surface. A layer of polysilicon is deposited on the device and doping, patterning and etching are used to define wiring lines and gate electrodes from the polysilicon. The polysilicon oxide lining the trench is more durable than the CVD oxide that fills the rest of the trench, and so better protects the substrate near the trench during subsequent etching and polishing steps.
    • 浅沟槽隔离工艺在邻近沟槽和沟槽上部的衬底上提供高质量的氧化物。 该过程避免了在邻近沟槽上边缘的衬底上形成质量差的氧化物,这被认为导致MOS晶体管呈现被称为“扭结”效应的不希望的亚阈值电流。 在硅衬底的表面上生长衬垫氧化物层,然后在衬垫氧化物的表面上形成氮化硅层。 在氮化硅上方形成光致抗蚀剂掩模,并蚀刻氮化硅和衬垫氧化物,然后蚀刻衬底以形成沟槽。 去除光致抗蚀剂掩模,在氮化硅层上方和沟槽内沉积多晶硅层,并且多晶硅层被氧化。 沉积CVD氧化物以过度填充沟槽,然后通过CMP去除多余的CVD氧化物和多晶氧化物,使用氮化硅层作为抛光停止。 剥去氮化硅并且使用HF浸渍来蚀刻沟槽氧化物以提供基本平坦的表面。 多晶硅层沉积在器件上,掺杂,图案化和蚀刻用于从多晶硅定义布线和栅电极。 在沟槽内衬的多晶硅氧化物比填充沟槽其余部分的CVD氧化物更耐用,因此在随后的蚀刻和抛光步骤期间更好地保护沟槽附近的衬底。
    • 20. 发明授权
    • Optical fiber connector assembly with loop-back structure
    • 具有回环结构的光纤连接器组件
    • US5475781A
    • 1995-12-12
    • US306755
    • 1994-09-15
    • Peter C. ChangLujia HwangGeorge ChouI. Shun Lei
    • Peter C. ChangLujia HwangGeorge ChouI. Shun Lei
    • G02B6/38G02B6/36
    • G02B6/3827G02B6/3879
    • An optical fiber connector assembly (70) includes a duplex clip (30) having two cavities (32) and two standard SC type connectors (10) side-by-side received therein wherein one connector (10) inter-mates with an optical emitter and the other connector inter-mates with an optical detector. A loop-back optical fiber (20) is generally positioned in the rear exterior of the duplex clip (30) with two distal ends of the fiber being respectively connected to the rear ends of the corresponding two connectors (10) inside such duplex clip. A back shield (40) fixedly encloses the duplex clip (30) from the back wherein such back shield (40) further includes a rearwardly projection hermetic portion whose shape conforms to the configuration of such loop-back fiber (20) for protection. Also, for protection, two caps (48) can be optionally respectively attached to the front portions of the connectors (10) extending forwardly from the clip (30).
    • 光纤连接器组件(70)包括具有两个腔(32)和并排接收的两个标准SC型连接器(10)的双相夹(30),其中一个连接器(10)与光发射器 另一个连接器与光学检测器相互配合。 环绕光纤(20)通常设置在双相夹子(30)的后部外部,其中光纤的两个远端分别连接到这种双工夹具内的相应的两个连接器(10)的后端。 后挡板(40)从背面固定地包围双相夹(30),其中这种后屏蔽(40)还包括向后突出的密封部分,其形状符合用于保护的这种环回光纤(20)的构造。 此外,为了保护,两个帽(48)可以可选地分别附接到从夹子(30)向前延伸的连接器(10)的前部。