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11. 发明授权

US08830590B2 Unit magnification large-format catadioptric lens for microlithography 有权
标题翻译：单位放大大幅度反射折射透镜用于微光刻
公开(公告)号：US08830590B2
公开(公告)日：2014-09-09
申请号：US13897514
申请日：2013-05-20
申请人： Ultratech, Inc.
发明人： David G. Stites
IPC分类号： G02B3/00 , G02B9/00 , G02B27/02 , G03B27/42 , G03B21/14
CPC分类号： G02B17/08 , G03F7/70225
摘要： A unit magnification Wynn-Dyson lens for microlithography has an image field sized to accommodate between four and six die of dimensions 26 mm×36 mm. The lens has a positive lens group that consists of either three or four refractive lens elements, with one of the lens elements being most mirror-wise and having a prism-wise concave aspheric surface. Protective windows respectively reside between object and image planes and the corresponding prism faces. The lens is corrected for at least the i-line LED wavelength spectrum or similar LED-generated wavelengths.
摘要翻译：用于微光刻的单位放大率Wynn-Dyson透镜具有尺寸适应尺寸为26mm×36mm的四至六个裸片的图像场。透镜具有由三个或四个折射透镜元件组成的正透镜组，其中一个透镜元件是最镜像的并且具有棱镜形的凹非球面表面。保护窗分别位于物体和图像平面之间以及相应的棱镜面。至少对i线LED波长光谱或类似的LED产生的波长进行校正。

12. 发明授权

US08822353B2 Systems and methods for forming a time-averaged line image 有权
标题翻译：用于形成时间平均线图像的系统和方法
公开(公告)号：US08822353B2
公开(公告)日：2014-09-02
申请号：US13199016
申请日：2011-08-17
申请人： Serguei Anikitchev , James T. McWhirter , Joseph E. Gortych
发明人： Serguei Anikitchev , James T. McWhirter , Joseph E. Gortych
IPC分类号： B23K26/00 , H01L21/268 , B23K26/073
CPC分类号： H01L21/268 , B23K26/0738 , B23K26/352 , B23K26/55
摘要： Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput.
摘要翻译：公开了用于形成沿着其长度具有相对高的强度均匀度的时间平均线图像的系统和方法。该方法包括在像平面处形成具有长轴方向上的第一强度不均匀量的线图像，并形成与主图像至少部分重叠的二次图像。该方法还包括根据扫描轮廓在主图像的至少一部分和长轴方向上扫描次级图像，以形成具有第二强度不均匀度的时间平均修改线图像 -axis方向小于第一个量。对于半导体晶片的激光退火，晶片扫描路径的相邻扫描的线图像重叠量大幅度减少，从而增加晶片生产量。

13. 发明申请

US20140227890A1 Apparatus and methods for improving the intensity profile of a beam image used to process a substrate 有权
标题翻译：用于改善用于处理衬底的光束图像的强度分布的装置和方法
公开(公告)号：US20140227890A1
公开(公告)日：2014-08-14
申请号：US14253570
申请日：2014-04-15
申请人： ULTRATECH, INC.
发明人： Andrew M. Hawryluk , Boris Grek , David A. Markle
IPC分类号： H01L21/263
CPC分类号： H01L21/2636 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.
摘要翻译：提供了用于改善用于处理半导体衬底的光束图像的强度分布的方法和装置。可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。

14. 发明授权

US08765493B2 Methods of characterizing semiconductor light-emitting devices based on product wafer characteristics 有权
标题翻译：基于产品晶片特性来表征半导体发光器件的方法
公开(公告)号：US08765493B2
公开(公告)日：2014-07-01
申请号：US13681994
申请日：2012-11-20
申请人： Andrew M. Hawryluk , David Owen
发明人： Andrew M. Hawryluk , David Owen
IPC分类号： H01L21/00
CPC分类号： H01L33/005 , G01B11/24 , H01L33/0095
摘要： Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.
摘要翻译：公开了基于产品晶片特性来表征半导体发光器件（LED）的方法。这些方法包括测量至少一个产品晶片特性，这种曲率或器件层应力。该方法还包括建立从产品晶片形成的LED管芯的至少一个特性与发射波长之间的关系。该关系允许预测在类似形成的产品晶片的器件层中形成的LED结构的发射波长。这又可以用于表征产品晶片，特别是其上形成的LED结构，并且在大容量LED制造中执行过程控制。

15. 发明授权

US08735251B2 Through silicon via and method of fabricating same 有权
标题翻译：通过硅通孔及其制造方法
公开(公告)号：US08735251B2
公开(公告)日：2014-05-27
申请号：US14046414
申请日：2013-10-04
申请人： Ultratech, Inc.
发明人： Paul Stephen Andry , Edmund Juris Sprogis , Cornelia Kang-I Tsang
IPC分类号： H01L21/336 , H01L21/76 , H01L21/311
CPC分类号： H01L24/19 , H01L21/76898 , H01L21/823871 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L2224/0401 , H01L2224/0557 , H01L2224/05572 , H01L2224/06181 , H01L2224/131 , H01L2224/14181 , H01L2924/00014 , H01L2924/0002 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the trench open to a top surface of the substrate; (b) forming a silicon dioxide layer on sidewalls of the trench, the silicon dioxide layer not filling the trench; (c) filling remaining space in the trench with polysilicon; after (c), (d) fabricating at least a portion of a CMOS device in the substrate; (e) removing the polysilicon from the trench, the dielectric layer remaining on the sidewalls of the trench; (f) re-filling the trench with an electrically conductive core; and after (f), (g) forming one or more wiring layers over the top surface of the substrate, a wire of a wiring level of the one or more wiring levels closest to the substrate contacting a top surface of the conductive core.
摘要翻译：一种硅通孔结构和一种制造通硅通孔的方法。该方法包括：（a）在硅衬底中形成沟槽，沟槽通向衬底的顶表面; （b）在所述沟槽的侧壁上形成二氧化硅层，所述二氧化硅层不填充所述沟槽; （c）用多晶硅填充沟槽中的剩余空间; （c）之后，（d）在衬底中制造至少一部分CMOS器件; （e）从所述沟槽去除所述多晶硅，所述电介质层残留在所述沟槽的侧壁上; （f）用导电芯重新填充沟槽; 在（f）之后，（g）在衬底的顶表面上形成一个或多个布线层，与接触导电芯的顶表面的最接近衬底的一个或多个布线层的布线层的布线。

16. 发明申请

US20140141538A1 METHODS OF CHARACTERIZING SEMICONDUCTOR LIGHT-EMITTING DEVICES BASED ON PRODUCT WAFER CHARACTERISTICS 有权
标题翻译：基于产品波形特性的半导体发光器件表征方法
公开(公告)号：US20140141538A1
公开(公告)日：2014-05-22
申请号：US13681994
申请日：2012-11-20
申请人： Andrew M. Hawryluk , David Owen
发明人： Andrew M. Hawryluk , David Owen
IPC分类号： H01L33/00 , G01B11/24
CPC分类号： H01L33/005 , G01B11/24 , H01L33/0095
摘要： Methods of characterizing semiconductor light-emitting devices (LEDs) based on product wafer characteristics are disclosed. The methods include measuring at least one product wafer characteristic, such curvature or device layer stress. The method also includes establishing a relationship between the at least one characteristic and the emission wavelengths of the LED dies formed from the product wafer. The relationship allows for predicting the emission wavelength of LED structures formed in the device layer of similarly formed product wafers. This in turn can be used to characterize the product wafers and in particular the LED structures formed thereon, and to perform process control in high-volume LED manufacturing.
摘要翻译：公开了基于产品晶片特性来表征半导体发光器件（LED）的方法。这些方法包括测量至少一个产品晶片特性，这种曲率或器件层应力。该方法还包括建立从产品晶片形成的LED管芯的至少一个特性与发射波长之间的关系。该关系允许预测在类似形成的产品晶片的器件层中形成的LED结构的发射波长。这又可以用于表征产品晶片，特别是其上形成的LED结构，并且在大容量LED制造中执行过程控制。

17. 发明申请

US20130321935A1 Unit magnification large-format catadioptric lens for microlithography 有权
标题翻译：单位放大大幅度反射折射透镜用于微光刻
公开(公告)号：US20130321935A1
公开(公告)日：2013-12-05
申请号：US13897514
申请日：2013-05-20
申请人： Ultratech, Inc.
发明人： David G. Stites
IPC分类号： G02B17/08
CPC分类号： G02B17/08 , G03F7/70225
摘要： A unit magnification Wynn-Dyson lens for microlithography has an image field sized to accommodate between four and six die of dimensions 26 mm×36 mm. The lens has a positive lens group that consists of either three or four refractive lens elements, with one of the lens elements being most mirror-wise and having a prism-wise concave aspheric surface. Protective windows respectively reside between object and image planes and the corresponding prism faces. The lens is corrected for at least the i-line LED wavelength spectrum or similar LED-generated wavelengths.
摘要翻译：用于微光刻的单位放大率Wynn-Dyson透镜具有尺寸适应尺寸为26mm×36mm的四至六个裸片的图像场。透镜具有由三个或四个折射透镜元件组成的正透镜组，其中一个透镜元件是最镜像的并且具有棱镜形的凹非球面表面。保护窗分别位于物体和图像平面之间以及相应的棱镜面。至少对i线LED波长光谱或类似的LED产生的波长进行校正。

18. 发明申请

US20130278109A1 Betavoltaic power sources for mobile device applications 有权
标题翻译：用于移动设备应用的Betavoltaic电源
公开(公告)号：US20130278109A1
公开(公告)日：2013-10-24
申请号：US13863283
申请日：2013-04-15
申请人： ULTRATECH, INC.
发明人： Arthur W. Zafiropoulo , Andrew M. Hawryluk
IPC分类号： G21H1/02 , G21H1/06
CPC分类号： G21H1/02 , G21H1/06
摘要： A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.
摘要翻译：用于移动设备和移动应用的贝塔伏特电源包括同位素层和能量转换层的堆叠配置。同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。贝塔伏特电源被配置为提供足够的功率来在其使用寿命期间操作移动设备。

19. 发明申请

US20130267096A1 Systems for and methods of laser-enhanced plasma processing of semiconductor materials 有权
标题翻译：半导体材料激光等离子体加工的系统和方法
公开(公告)号：US20130267096A1
公开(公告)日：2013-10-10
申请号：US13438865
申请日：2012-04-04
申请人： Andrew M. Hawryluk , Arthur W. Zafiropoulo
发明人： Andrew M. Hawryluk , Arthur W. Zafiropoulo
IPC分类号： H01L21/302 , H01L21/31 , B23K9/00
CPC分类号： H01J37/32339 , H01J37/32082 , H01L21/02046 , H01L21/268 , H01L21/3065 , H01L21/67115
摘要： Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior.
摘要翻译：公开了半导体材料的激光增强等离子体处理的系统和方法。该方法包括将半导体材料支撑在处理室内部并对半导体材料进行等离子体处理。该方法还包括通过处理室中的窗口同时用激光束加热晶片表面以增加等离子体处理的反应速率。其他方法包括在等离子体处理之前或之后对半导体材料进行激光加热，但半导体材料位于相同的室内。

20. 发明授权

US08541299B2 Electrical interconnect forming method 有权
标题翻译：电互连成型方法
公开(公告)号：US08541299B2
公开(公告)日：2013-09-24
申请号：US12787527
申请日：2010-05-26
申请人： Stephen Leslie Buchwalter , Bruce K. Furman , Peter A. Gruber , Jae-Woong Nah , Da-Yuan Shih
发明人： Stephen Leslie Buchwalter , Bruce K. Furman , Peter A. Gruber , Jae-Woong Nah , Da-Yuan Shih
IPC分类号： H01L21/44 , H01L21/48
CPC分类号： H01L24/16 , H01L21/563 , H01L21/6835 , H01L24/11 , H01L24/12 , H01L24/27 , H01L24/28 , H01L24/31 , H01L24/73 , H01L24/81 , H01L24/94 , H01L2221/68377 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/11003 , H01L2224/1131 , H01L2224/11334 , H01L2224/114 , H01L2224/116 , H01L2224/11822 , H01L2224/1308 , H01L2224/13082 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1357 , H01L2224/136 , H01L2224/16 , H01L2224/16225 , H01L2224/17051 , H01L2224/274 , H01L2224/29111 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81815 , H01L2924/0001 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H05K3/3436 , H05K2201/0379 , H05K2201/094 , H05K2201/10234 , H05K2201/10242 , H05K2201/10977 , Y02P70/613 , Y10T29/49165 , H01L2224/45111 , H01L2924/01047 , H01L2224/13099 , H01L2924/01083 , H01L2924/00 , H01L2224/29099 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： An electrical interconnect forming method. The electrical interconnect includes a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.
摘要翻译：电互连形成方法。电互连包括包括第一导电焊盘的第一衬底，包括第二导电焊盘的第二衬底以及将第一导电焊盘电连接和机械地连接到第二导电焊盘的互连结构。互连结构包括非焊料金属芯结构，第一焊料结构和第二焊料结构。第一焊料结构将非焊料金属芯结构的第一部分电连接并机械地连接到第一导电焊盘。第二焊料结构将非焊料金属芯结构的第二部分电连接并机械连接到第二导电焊盘。

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