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    • 182. 发明授权
    • Dual slurry particle sizes for reducing microscratching of wafers
    • 用于减少晶片显微镜的双重浆料粒径
    • US06294472B1
    • 2001-09-25
    • US09576750
    • 2000-05-23
    • Jonathan B. SmithPaul R. BesserJeremy I. Martin
    • Jonathan B. SmithPaul R. BesserJeremy I. Martin
    • H01L2100
    • C09G1/02B24B37/044B24B57/02H01L21/30625
    • A method includes providing at least one wafer having a process layer formed thereon for polishing. The process layer is polished using a first polishing process that is associated with a slurry having a first abrasive particle size. The process layer is polished using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon for polishing. The polishing tool is adapted to polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size. The polishing tool is adapted to polish the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. The process controller is coupled to the polishing tool and adapted to communicate with at least one of a slurry controller and the polishing tool.
    • 一种方法包括提供至少一个晶片,其上形成有用于抛光的工艺层。 使用与具有第一研磨粒度的浆料相关联的第一抛光工艺来抛光工艺层。 使用与具有不同于第一磨料颗粒尺寸的第二磨料颗粒尺寸的浆料相关联的第二抛光方法来抛光工艺层。 系统包括抛光工具和过程控制器。 抛光工具适于接收至少一个晶片,其上形成有用于抛光的工艺层。 抛光工具适于使用与具有第一研磨粒度的浆料相关联的第一抛光工艺来抛光工艺层。 抛光工具适于使用与具有不同于第一磨料颗粒尺寸的第二磨料颗粒尺寸的浆料相关联的第二抛光工艺来抛光工艺层。 过程控制器耦合到抛光工具并且适于与浆料控制器和抛光工具中的至少一个连通。
    • 185. 发明授权
    • Method and apparatus for endpointing mechanical and chemical-mechanical
planarization of microelectronic substrates
    • 用于终止微电子基板的机械和化学机械平面化的方法和装置
    • US06046111A
    • 2000-04-04
    • US146330
    • 1998-09-02
    • Karl M. Robinson
    • Karl M. Robinson
    • H01L21/00
    • B24B37/013B24B37/015B24B37/044B24B37/105B24B49/10B24B49/12B24B49/14B24B49/16
    • A method and apparatus for endpointing mechanical and chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrates. In one application in which a microelectronic substrate is planarized against a planarizing medium defined by a planarizing fluid and a polishing pad, one method of endpointing the planarizing process in accordance with the invention includes increasing the viscosity of the planarizing fluid between the substrate and the polishing pad as the substrate becomes substantially planar. The endpointing method continues by detecting a change in drag or frictional force between the substrate and the planarizing medium, and then stopping removal of material from the substrate when the rate that the friction increases between the substrate and the planarizing medium changes from a first rate to a second rate greater than the first rate. To increase the viscosity of the planarizing fluid as the substrate becomes planar, the method may further include adding resistance elements to the planarizing fluid. The resistance elements are typically separate from the abrasive particles in the planarizing medium, and the resistance elements can be selected to cause the viscosity of the planarizing fluid to increase from a first viscosity when the substrate is not substantially planar to a second viscosity when the substrate becomes at least substantially planar.
    • 用于终止半导体晶片,场发射显示器和其它微电子基板的机械和化学机械平面化的方法和装置。 在微电子衬底相对于由平坦化流体和抛光垫定义的平坦化介质进行平面化的一个应用中,根据本发明的一种终止平坦化工艺的方法包括增加衬底和抛光之间的平坦化流体的粘度 衬底作为基底变得基本上是平面的。 通过检测衬底和平坦化介质之间的阻力或摩擦力的变化,然后当衬底和平坦化介质之间的摩擦增加的速率从第一速率变化到第一速率至 第二比率大于第一率。 为了在基板变成平面时增加平坦化流体的粘度,该方法还可以包括向平坦化流体添加电阻元件。 电阻元件通常与平坦化介质中的磨料颗粒分离,并且可以选择电阻元件,以使得当衬底基本上不平面时,平坦化流体的粘度从第一粘度增加到基底 变得至少基本上是平面的。