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181. 发明申请

US20060053357A1 Integrated circuit yield and quality analysis methods and systems 审中-公开
标题翻译：集成电路产量和质量分析方法和系统
公开(公告)号：US20060053357A1
公开(公告)日：2006-03-09
申请号：US11221373
申请日：2005-09-06
申请人： Janusz Rajski , Gang Chen , Martin Keim , Nagesh Tamarapalli , Manish Sharma , Huaxing Tang
发明人： Janusz Rajski , Gang Chen , Martin Keim , Nagesh Tamarapalli , Manish Sharma , Huaxing Tang
IPC分类号： G01R31/28 , G06F11/00
CPC分类号： G06F11/2273 , G01R31/01 , G01R31/2846 , G01R31/2853 , G01R31/2894 , G01R31/31704 , G01R31/31835
摘要： Methods, apparatus, and systems for testing, analyzing, and improving integrated circuit yield and quality are disclosed herein. For example, in one exemplary embodiment, design defect extraction rules are derived at least partially from a set of design manufacturing rules. Potential defects are extracted from a representation of an integrated circuit layout using the design defect extraction rules. Circuit test stimuli applied during one or more circuit tests are determined. Test responses resulting from the applied circuit tests are evaluated to identify integrated circuits that fail and to identify the occurrence in the failing integrated circuits of one or more potential types of defects associated with the applied circuit tests. Information concerning the repetitive identification in the failing integrated circuits of the occurrence of potential types of defects is collected and analyzed to determine the likelihood of potential types of defects being present in integrated circuits manufactured in accordance with the layout.
摘要翻译：本文公开了用于测试，分析和提高集成电路产量和质量的方法，装置和系统。例如，在一个示例性实施例中，至少部分地从一组设计制造规则导出设计缺陷提取规则。使用设计缺陷提取规则从集成电路布局的表示中提取潜在缺陷。确定在一个或多个电路测试期间施加的电路测试刺激。评估由应用电路测试产生的测试响应，以识别故障的集成电路，并识别故障集成电路中与应用电路测试相关的一种或多种潜在类型的缺陷的发生。收集和分析关于发生潜在类型缺陷的故障集成电路中的重复识别的信息，以确定存在于根据布局制造的集成电路中的潜在类型的缺陷的可能性。

182. 发明申请

US20060007025A1 Device and method for encoding data, and a device and method for decoding data 审中-公开
标题翻译：用于编码数据的装置和方法，以及用于对数据进行解码的装置和方法
公开(公告)号：US20060007025A1
公开(公告)日：2006-01-12
申请号：US10888476
申请日：2004-07-08
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： H03M7/00
CPC分类号： B82Y10/00 , G06N10/00
摘要： In an embodiment of the present invention there is a device for encoding data. The device includes a data input for receiving an input data stream that includes a plurality of distinct logical values. The input data stream is such that any one of the logical values has substantially the same probability of occurring as any other of the logical values. The device also includes a processor for obtaining an output data stream based on the input data stream. The output data stream is such that a first of the logical values has a lower probability of occurring than a second of the logical values. The device further includes a data output for outputting the output data stream.
摘要翻译：在本发明的实施例中，存在用于对数据进行编码的装置。该设备包括用于接收包括多个不同逻辑值的输入数据流的数据输入。输入数据流使得逻辑值中的任何一个具有与任何其他逻辑值基本上相同的发生概率。该设备还包括用于基于输入数据流获得输出数据流的处理器。输出数据流使得逻辑值中的第一个具有比第二逻辑值更低的发生概率。该装置还包括用于输出输出数据流的数据输出。

183. 发明授权

US06980466B2 Soft-reference four conductor magnetic memory storage device 有权
公开(公告)号：US06980466B2
公开(公告)日：2005-12-27
申请号：US10758658
申请日：2004-01-15
申请人： Fredrick A. Perner , Manish Sharma
发明人： Fredrick A. Perner , Manish Sharma
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , G11C11/02
CPC分类号： G11C11/15
摘要： This invention provides a soft-reference four conductor magnetic memory storage device. In a particular embodiment, there are a plurality of parallel electrically conductive first sense conductors and a plurality of parallel electrically conductive second sense conductors. The first and second sense conductors may provide a cross point array or a series connected array. Soft-reference magnetic memory cells are provided in electrical contact with and located and at each intersection. In addition there are a plurality of parallel electrically conductive write rows substantially proximate to and electrically isolated from the first sense conductors. A plurality of parallel electrically conductive write columns transverse to the write rows, substantially proximate to and electrically isolated from the second sense conductors, forming a write cross point array with a plurality of intersections, is also provided. Sense magnetic fields generated by at least one conductor orient the soft-reference layer but do not alter the data stored within the cell. An associated method of use is also provided.

184. 发明授权

US06977839B2 Magnetic memory storage device 有权
公开(公告)号：US06977839B2
公开(公告)日：2005-12-20
申请号：US11064883
申请日：2005-02-23
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： H01L27/105 , G11B5/00 , G11B5/66 , G11B5/74 , G11B9/00 , G11B11/10 , G11C11/16 , H01L21/8246 , H01L43/08 , G11C11/15 , G11C5/08 , G11C7/02 , G11C11/00
CPC分类号： G11B5/74 , B82Y10/00 , G11B5/00 , G11B5/66 , G11B5/743 , G11B9/1409 , G11B9/1418 , G11B11/10 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021 , G11C11/16 , G11C11/1675
摘要： This invention provides a probe based magnetic memory storage device. In a particular embodiment, magnetic memory cells are provided in an array. Each cell provides a magnetic data layer and a conductor. At least one movable probe having a tip characterized by a conductor and a soft reference layer is also provided. In addition, an intermediate layer joined to either the movable probe or each memory cell is provided. The movable probe may be placed in contact with a given memory cell, the probe and cell thereby forming a tunnel junction memory cell with the intermediate layer serving as the tunnel junction. The magnetic field provided by the probe conductor may be combined with a field provided by the cell conductor to produce a switching field to alter the orientation of the data layer. The memory cells may include a material wherein the coercivity is decreased upon an increase in temperature. The probe may also include a heat generator. The magnetic field provided by the probe connector will not alter the orientation of an unheated cell, but may alter the orientation of a heated cell.

185. 发明申请

US20050270364A1 Flexible media magnetic printing system 失效
标题翻译：柔性介质磁性印刷系统
公开(公告)号：US20050270364A1
公开(公告)日：2005-12-08
申请号：US10861047
申请日：2004-06-04
申请人： Manish Sharma , Frederick Perner
发明人： Manish Sharma , Frederick Perner
IPC分类号： B41J3/50 , B41M5/40 , C09D11/00
CPC分类号： C09D11/30 , B41J3/50
摘要： A flexible media magnetic printing system provides for data storage within flexible media imprinted with magnetic ink. In a particular embodiment, the printing system includes at least one reservoir of magnetic ink with magnetic particles capable of supporting high density data, and at least one reservoir of visible ink. The reservoirs are coupled to a print head including one or more ink-ejecting nozzles, which is removably or fixedly coupled to at least one magnetic read/write device. The magnetic read/write device tracks above the magnetic ink applied by the ink-ejecting nozzles to the flexible media. The magnetic read/write device writes to the magnetic ink by providing a magnetic field of sufficient intensity to re-orient the magnetic alignment within the ink to a known direction. The magnetic read/write device also reads data from flexible media, for example, paper or cloth that is imprinted with data-embedded magnetic ink. Visible or substantially invisible magnetic ink may be applied as dots within or strips beneath characters printed in visible ink. An inkjet printer head incorporating the flexible media magnetic printing system is further provided.
摘要翻译：柔性介质磁性印刷系统提供用磁性墨水印刷的柔性介质内的数据存储。在特定实施例中，打印系统包括至少一个具有能够支持高密度数据的磁性颗粒的磁性墨水储存器和至少一个可见墨水储存器。储存器联接到包括一个或多个喷墨喷嘴的打印头，喷墨喷嘴可移除地或固定地耦合到至少一个磁读/写装置。磁读/写装置在由喷墨喷嘴施加到柔性介质上的磁性油墨之上进行跟踪。磁读/写装置通过提供足够强度的磁场来写入磁墨，以将墨中的磁对准重新定向到已知方向。磁读/写装置还从柔性介质读取数据，例如印有数据嵌入式磁墨的纸或布。可见或基本上不可见的磁性墨水可以作为打印在可见墨水中的字符之下或之下的点施加。还提供了结合有柔性介质磁性印刷系统的喷墨打印头。

186. 发明申请

US20050269286A1 Method of fabricating a nano-wire 审中-公开
标题翻译：制造纳米线的方法
公开(公告)号：US20050269286A1
公开(公告)日：2005-12-08
申请号：US10864004
申请日：2004-06-08
申请人： Manish Sharma , Si-Ty Lam
发明人： Manish Sharma , Si-Ty Lam
IPC分类号： B44C1/22 , B81C1/00 , H01J1/304 , H01J9/02 , H01J31/12 , H01L21/302
CPC分类号： H01J1/304 , B82Y10/00 , H01J9/025 , H01J31/123 , H01J2201/30469
摘要： The present invention provides a method of fabricating a nano-wire from a substrate. The method includes the step of etching the substrate to form a wire that projects from a surface of the etched substrate. The wire has a predetermined thickness. The method also includes the step of exposing side surface portions of the wire to a reactive gas to react material of the side portions with the reactive gas and form a reaction product. The method further includes the step of removing the reaction product to thin the wire below the predetermined thickness.
摘要翻译：本发明提供从基板制造纳米线的方法。该方法包括蚀刻基板以形成从蚀刻的基板的表面突出的导线的步骤。电线具有预定的厚度。该方法还包括将导线的侧表面部分暴露于反应性气体以将侧部材料与反应气体反应并形成反应产物的步骤。所述方法还包括除去反应产物以将所述电线薄化至低于预定厚度的步骤。

187. 发明授权

US06956271B2 Switching of soft reference layers of magnetic memory devices 有权
标题翻译：磁存储器件软参考层的切换
公开(公告)号：US06956271B2
公开(公告)日：2005-10-18
申请号：US10776580
申请日：2004-02-11
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： G11C11/16 , H01L27/22 , H01L29/76 , H01L29/82
CPC分类号： H01L27/224 , G11C11/16 , G11C11/1675
摘要： A magnetic random access memory (MRAM) including an array of magnetic memory cells and a plurality of word and bit lines connecting columns and rows of the memory cells. Each memory cell has a magnetic reference layer and a magnetic data layer. Each reference layer and each data layer has a magnetization that is switchable between two states under the influence of a magnetic field. The MRAM also includes a plurality of heating elements each proximate to a respective reference layer. Each heating element provides in use for localized heating of the respective reference layer so as to reduce the coercivity of the reference layer to facilitate switching of the reference layer without switching of the data layers.
摘要翻译：磁性随机存取存储器（MRAM），包括磁存储器单元阵列和连接存储单元的列和行的多个字和位线。每个存储单元具有磁性参考层和磁性数据层。每个参考层和每个数据层具有在磁场的影响下在两个状态之间切换的磁化。 MRAM还包括多个加热元件，每个加热元件各自靠近相应的参考层。每个加热元件用于各个参考层的局部加热，以便降低参考层的矫顽力，以便切换参考层而不需要切换数据层。

188. 发明授权

US06950919B2 Computer system with operating system to dynamically adjust the main memory 有权
标题翻译：计算机系统具有操作系统动态调整主存储器
公开(公告)号：US06950919B2
公开(公告)日：2005-09-27
申请号：US10397434
申请日：2003-03-26
申请人： Manish Sharma , Janice H. Nickel
发明人： Manish Sharma , Janice H. Nickel
IPC分类号： G06F12/06 , G06F9/445 , G06F9/50 , G06F12/00
CPC分类号： G06F9/5016 , G06F9/4411
摘要： This disclosure provides a computer system with operating system permitting dynamic reallocation of main memory during operation. In a particular embodiment the computer system with operating system are used in connection with non-volatile main memory stores (NMS) such as MRAM. As the NMS is a component of main memory attached directly to the memory bus, the NMS functions at substantially the same speed as traditional volatile memory stores. Reallocation of main memory and use of applications or programs stored on the inserted NMS occurs at speeds orders of magnitude greater than traditional secondary memory devices.
摘要翻译：本公开提供了一种具有操作系统的计算机系统，其允许在操作期间主存储器的动态重新分配。在具体实施例中，具有操作系统的计算机系统与诸如MRAM的非易失性主存储器（NMS）结合使用。由于NMS是直接连接到存储器总线的主存储器的组件，所以NMS以与传统易失性存储器存储器基本相同的速度运行。主存储器的重新分配和存储在插入的NMS上的应用或程序的使用发生在比传统的辅助存储器设备大得多的数量级。

189. 发明授权

US06940747B1 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US06940747B1
公开(公告)日：2005-09-06
申请号：US10854858
申请日：2004-05-26
申请人： Manish Sharma , Frederick A. Perner
发明人： Manish Sharma , Frederick A. Perner
IPC分类号： G11C11/16 , G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/16 , H01L29/785
摘要： The present invention provides a magnetic memory device. An embodiment of the present invention includes a magnetic memory cell that is switchable between two states offering electrical resistance which are detectible by a sense current though the magnetic memory cell. The device includes a field effect transistor (FET) arrangement which has a source and a drain. The source and the drain are connected by a connecting element which projects from a portion of the device and which has an electrical conductivity that varies in response to a gate voltage applied to the connecting element. The magnetic memory cell is in electrical communication with the connecting element so that at least a portion of the sense current is in use associated with a corresponding gate voltage and the FET arrangement amplifies at least a portion of the sense current.
摘要翻译：本发明提供一种磁存储装置。本发明的实施例包括磁存储单元，该磁存储单元可在提供电阻的两种状态之间切换，该状态可通过磁存储单元的感测电流检测。该器件包括具有源极和漏极的场效应晶体管（FET）装置。源极和漏极通过从器件的一部分突出并具有响应于施加到连接元件的栅极电压而变化的导电性的连接元件连接。磁存储单元与连接元件电连通，使得感应电流的至少一部分在使用中与相应的栅极电压相关联，并且FET装置放大至少一部分感测电流。

190. 发明授权

US06936903B2 Magnetic memory cell having a soft reference layer 有权
标题翻译：具有软参考层的磁存储单元
公开(公告)号：US06936903B2
公开(公告)日：2005-08-30
申请号：US10692546
申请日：2003-10-24
申请人： Thomas C. Anthony , Manish Sharma , Manoj K. Bhottacharyya
发明人： Thomas C. Anthony , Manish Sharma , Manoj K. Bhottacharyya
IPC分类号： H01L27/105 , G11C11/16 , H01L21/82 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12 , H01L43/00 , G11C11/00 , G11C11/14
CPC分类号： H01L27/222 , G11C11/16 , H01L43/08
摘要： An exemplary magnetic memory cell comprises a data layer, a soft reference layer having a lower magnetic energy than the data layer, and spacer layer between the data layer and the soft reference layer.
摘要翻译：示例性磁存储单元包括数据层，具有比数据层低的磁能的软参考层以及数据层和软参考层之间的间隔层。

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