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181. 发明申请

US20050227274A1 Detection method and detection apparatus of substance in biological sample 有权
标题翻译：生物样品中物质的检测方法和检测装置
公开(公告)号：US20050227274A1
公开(公告)日：2005-10-13
申请号：US11100570
申请日：2005-04-07
申请人： Satoshi Takahashi
发明人： Satoshi Takahashi
IPC分类号： C12M1/00 , C12Q1/68 , G01N1/10 , G01N21/07 , G01N21/64 , G01N21/78 , G01N33/53 , G01N33/566 , G01N33/58 , G01N35/00 , G01N37/00
CPC分类号： G01N21/6428 , G01N21/07 , G01N21/645 , G01N2021/6421 , G01N2021/6491
摘要： A high accuracy method for detecting a biological-related substance is provided by which an abnormal state, such as the adhesion of dust, the reduction of a sample solution, or the like can be judged. Means for detecting a light emitted by the portion for light detection after dividing the light into at least a plurality of wavelength zones is provided. One of the plurality of wavelength zones includes substantially the same wavelength zone as that of the component of the excitation light. The light intensity of the component of the excitation light is detected and it is compared with a predetermined intensity (threshold). A highly accurate fluorescence measurement can be realized, by which the abnormality of a sample can be judged.
摘要翻译：提供了用于检测生物相关物质的高精度方法，通过该方法可以判断诸如灰尘的粘附，样品溶液的减少等异常状态。提供了用于在将光分成至少多个波长区域之后检测由光检测部分发出的光的装置。多个波长区域中的一个包括与激发光的分量基本上相同的波长区域。检测激发光的分量的光强度，并将其与预定强度（阈值）进行比较。可以实现高精度的荧光测量，由此可以判断样品的异常。

182. 发明申请

US20050050314A1 Electronic apparatus and method for starting up system of such apparatus 审中-公开
标题翻译：用于启动这种装置的系统的电子装置和方法
公开(公告)号：US20050050314A1
公开(公告)日：2005-03-03
申请号：US10892487
申请日：2004-07-16
申请人： Fumio Ohkita , Yasushi Naito , Shigeru Hirahata , Satoshi Takahashi , Tomohiko Mizuguchi , Satoshi Iimuro
发明人： Fumio Ohkita , Yasushi Naito , Shigeru Hirahata , Satoshi Takahashi , Tomohiko Mizuguchi , Satoshi Iimuro
IPC分类号： G06F12/06 , G06F9/00 , G06F9/445 , G06F12/00 , G06F13/10
CPC分类号： G06F9/4403
摘要： For providing an electronic apparatus, into which a semiconductor memory, being unavailable random accessing thereon, is installed as a memory for storing control programs therein, as well as, a start-up method for a system thereof, an electronic apparatus has a controller for executing control on each portion of the apparatus. The controller comprises a CPU 201 and a non-volatile memory 203, being electrically erasable and writable data thereof and having a function of reading out data locating at specific addresses, continuously, such as, a flash memory of “NAND” type, representatively, wherein continuous addresses are generated responding to a reset signal, so as to read out a boot program stored in a portion of the non-volatile memory, continuously, when executing the start-up of the system, and also the boot program is extended on a volatile memory 202, being accessible at random to data thereof.
摘要翻译：为了提供一种电子设备，其中不可用的半导体存储器随机存取在其中，作为其中存储控制程序的存储器以及其系统的启动方法，电子设备具有用于对设备的每个部分执行控制。控制器包括CPU 201和非易失性存储器203，它们是电可擦除和可写入的数据，并且具有连续地读出特定地址的数据的功能，例如“NAND”类型的闪速存储器，其中响应于复位信号产生连续地址，以便在执行系统的启动时连续地读出存储在非易失性存储器的一部分中的引导程序，还引导程序被扩展易失性存储器202可随机访问其数据。

183. 发明授权

US06797199B2 Clathrate compounds, manufacture thereof, and thermoelectric materials, thermoelectric modules, semiconductor materials and hard materials based thereon 有权
标题翻译：包覆化合物，其制造方法，热电材料，热电模块，半导体材料和基于其的硬质材料
公开(公告)号：US06797199B2
公开(公告)日：2004-09-28
申请号：US10214857
申请日：2002-08-08
申请人： Haruki Eguchi , Akihiko Suzuki , Satoshi Takahashi , Kaoru Miyahara , Tohru Tanaka , Shigemitsu Kihara , Kazuo Tsumuraya
发明人： Haruki Eguchi , Akihiko Suzuki , Satoshi Takahashi , Kaoru Miyahara , Tohru Tanaka , Shigemitsu Kihara , Kazuo Tsumuraya
IPC分类号： H01B104
CPC分类号： H01L35/14 , C01B33/06 , Y02P20/129 , Y02P20/13
摘要： In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Atoms of an element from group 4B of the periodic table are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table. Suitable manufacturing methods include melt methods and sintering methods, and moreover intercalant intercalation compounds or the like may also be used as raw materials.
摘要翻译：在电子等高科技领域，与传统材料不同的新型高性能材料的开发受到重视。本发明的目的是提供一种可用作热电材料，硬质材料或半导体材料的包合化合物。元素周期表4B的元素的原子形成包合物晶格，然后形成包合物化合物，其中特定的掺杂原子被包封在包合物晶格内，并且包合物晶格的一部分原子被指定的取代原子。合适的掺杂原子是1A组，2A组，3A组，1B组，2B组，3B组，4A组，5A组，6A组和8组的原子，合适的取代原子是来自1A组，2A组， 3A组，1B组，2B组，3B组，5A组，6A组，7A组，5B组，6B组，7B组和8周期。合适的制造方法包括熔融法和烧结方法，而且插入剂插层化合物等也可以用作原料。

184. 发明授权

US06760105B2 Method and apparatus for inspecting DNA and method for detecting fluorescence 有权
标题翻译：检测DNA的方法和装置及荧光检测方法
公开(公告)号：US06760105B2
公开(公告)日：2004-07-06
申请号：US10053976
申请日：2002-01-18
申请人： Yoshitada Oshida , Satoshi Takahashi , Taisaku Seino , Kenji Yasuda
发明人： Yoshitada Oshida , Satoshi Takahashi , Taisaku Seino , Kenji Yasuda
IPC分类号： G01N2164
CPC分类号： G01N21/6452 , G01N21/6428 , G01N2021/6419 , G01N2021/6421 , G01N2021/6441
摘要： A DNA sample added with a plurality of fluorescent marks is irradiated with excitation lights having a plurality of wavelengths and when fluorescence intensities are detected separately, the excitation light and a position on the sample are relatively changed over a desired area once to thereby detect the plurality of fluorescent marks at high speed.
摘要翻译：用多个荧光标记添加的DNA样品用具有多个波长的激发光照射，并且当单独检测荧光强度时，激发光和样品上的位置在期望的区域上相对地改变一次，从而检测多个的荧光标记。

185. 发明授权

US06740602B1 Method of forming low-dielectric constant film on semiconductor substrate by plasma reaction using high-RF power 有权
标题翻译：通过使用高RF功率的等离子体反应在半导体衬底上形成低介电常数膜的方法
公开(公告)号：US06740602B1
公开(公告)日：2004-05-25
申请号：US10391030
申请日：2003-03-17
申请人： Menso Hendriks , Naoto Tsuji , Satoshi Takahashi
发明人： Menso Hendriks , Naoto Tsuji , Satoshi Takahashi
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , B05D1/62 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633
摘要： A method for forming a film having a low dielectric constant and high mechanical hardness on a semiconductor substrate by plasma reaction includes the steps of: (i) introducing a silicon-containing hydrocarbon gas as a source gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and (ii) applying radio-frequency (RF) power of 1,000 W or higher to the reaction space while maintaining a pressure of the reaction space at 100 Pa or higher to activate plasma polymerization reaction in the reaction space, thereby forming a thin film on the semiconductor substrate.
摘要翻译：通过等离子体反应在半导体衬底上形成具有低介电常数和高机械硬度的膜的方法包括以下步骤：（i）将含硅烃气体作为源气体引入用于等离子体CVD处理的反应空间中，其中放置半导体衬底; 和（ii）将1000W以上的射频（RF）功率施加到反应空间，同时将反应空间的压力保持在100Pa以上，以激活反应空间中的等离子体聚合反应，从而在半导体衬底。

186. 发明授权

US06686859B2 Digital-to-analog-converter 失效
标题翻译：数模转换器
公开(公告)号：US06686859B2
公开(公告)日：2004-02-03
申请号：US10351724
申请日：2003-01-27
申请人： Masami Aiura , Satoshi Takahashi , Yuichi Nakatani
发明人： Masami Aiura , Satoshi Takahashi , Yuichi Nakatani
IPC分类号： H03M166
CPC分类号： H03M1/0643 , H03M1/0682 , H03M1/747
摘要： It is an objective to provide a digital-to-analog converter circuit that allows the value of the current output from each current source cell to be identical, regardless of the position of that current source cell relative to the power supply line. To ensure that the voltages supplied to the respective current source cells are identical, the power supply lines La and Lb are disposed in the form of a right triangle modified such that their line widths W1 and W2 become constantly narrower on one side depending on the position at which the power supply lines La and Lb are formed. The power supply lines La and Lb are also disposed such that their hypotenuses are opposite to each other.
摘要翻译：目的是提供数模转换器电路，其允许来自每个电流源单元的电流输出的值相同，而不管该电流源单元相对于电源线的位置如何。为了确保提供给各个电流源单元的电压相同，电源线La和Lb以直角三角形的形式被设置，使得它们的线宽W1和W2根据位置在一侧变得不断变窄在其上形成电源线La和Lb。电源线La和Lb也被布置成使得它们的斜边彼此相对。

187. 发明授权

US06639849B2 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 有权
标题翻译：非易失性半导体存储器件根据第一动态参考单元的阈值编程第二动态参考单元
公开(公告)号：US06639849B2
公开(公告)日：2003-10-28
申请号：US10356495
申请日：2003-02-03
申请人： Satoshi Takahashi , Minoru Yamashita
发明人： Satoshi Takahashi , Minoru Yamashita
IPC分类号： G11C1604
CPC分类号： G11C7/14 , G11C16/0475 , G11C16/28
摘要： In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell.
摘要翻译：在非易失性半导体存储器件中，第一和第二动态参考单元经受与存储单元相同的重写操作。从第一和第二动态参考单元获得平均参考电流，并将其与从存储器单元读取的数据的电流进行比较，以便判断所读取的数据的电平。在该配置中，第二动态参考单元根据第一动态参考单元的阈值被编程。

188. 发明授权

US06638689B1 Photoresist compositions and flexible printed wiring boards with protective layer 有权
标题翻译：光刻胶组合物和具有保护层的柔性印刷线路板
公开(公告)号：US06638689B1
公开(公告)日：2003-10-28
申请号：US09288240
申请日：1999-04-08
申请人： Satoshi Takahashi , Akira Tsutsumi , Koichi Uno , Minoru Nagashima
发明人： Satoshi Takahashi , Akira Tsutsumi , Koichi Uno , Minoru Nagashima
IPC分类号： G03F740
CPC分类号： H05K3/002 , G03F7/033 , H05K3/0076 , H05K2201/0154 , H05K2201/0166 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/11 , Y10S430/111
摘要： Photoresist compositions, which can attain high-accuracy etching without causing separation and flexible printed wiring boards prepared with the photoresist compositions are disclosed. In order to etch a polyimide precursor layer on a conductive circuit, a photoresist composition comprising a photopolymerizable organic material (A), a water-soluble resin (B) and an amino-group-containing resin (C) is applied on the surface of the polyimide precursor layer to form a photoresist layer. Then, the photoresist layer is patterned by a photolithographic process. The polyimide precursor layer is etched and the pattern of the photoresist layer is transferred to the polyimide precursor layer. The amino-group-containing resin (C) in the photoresist layer is combined with an acid anhydride in the polyimide precursor layer to attain good adhesion and high-accuracy etching without causing separation of the photoresist layer. Alternatively, a film can be formed from the photoresist composition and then be applied on the surface of the polyimide precursor layer to form a photoresist layer.
摘要翻译：公开了可以获得高精度蚀刻而不产生分离的光致抗蚀剂组合物，并且用光致抗蚀剂组合物制备的柔性印刷线路板。为了蚀刻导电电路上的聚酰亚胺前体层，将包含可光聚合有机材料（A），水溶性树脂（B）和含氨基树脂（C）的光致抗蚀剂组合物涂覆在聚酰亚胺前体层以形成光致抗蚀剂层。然后，通过光刻工艺对光致抗蚀剂层进行图案化。蚀刻聚酰亚胺前体层，将光致抗蚀剂层的图案转印到聚酰亚胺前体层。将光致抗蚀剂层中的含氨基树脂（C）与聚酰亚胺前体层中的酸酐组合以获得良好的粘附性和高精度蚀刻，而不会使光致抗蚀剂层分离。或者，可以由光致抗蚀剂组合物形成膜，然后施加在聚酰亚胺前体层的表面上以形成光致抗蚀剂层。

189. 发明授权

US06579769B2 Semiconductor device manufacturing method including forming FOX with dual oxidation 有权
标题翻译：半导体器件制造方法，包括形成具有双重氧化的FOX
公开(公告)号：US06579769B2
公开(公告)日：2003-06-17
申请号：US09726384
申请日：2000-12-01
申请人： Hiroyuki Shimada , Masaaki Higashitani , Hideo Kurihara , Hideki Komori , Satoshi Takahashi
发明人： Hiroyuki Shimada , Masaaki Higashitani , Hideo Kurihara , Hideki Komori , Satoshi Takahashi
IPC分类号： H01L21336
CPC分类号： H01L21/76221
摘要： In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.
摘要翻译：在制造半导体器件的方法中，包括在半导体衬底的表面上形成防氧化层的步骤，在氧化防止层中形成第一窗口，将半导体衬底放置在第一气氛中，其中氧气气体和第一量的氯气通过第一温度被供应，然后在第一温度下加热半导体衬底，使得通过热氧化从第一窗口暴露的半导体衬底的表面来生长第一选择性氧化物膜，形成第二通过图案化氧化防止层，并将半导体衬底放置在第二气氛中，在第二气氛中，将氧气和大于第一量的第二量的氯气供给到第二气氛中，然后在第二温度使得形成第二选择性氧化物膜，并且形成第一选择性氧化物膜的厚度增强了形成在第一窗口下方的氧化膜。因此，在包括生长硅膜的局部氧化的步骤的半导体器件制造方法中，可以防止在选择性氧化物膜的鸟嘴上产生投影。

190. 发明授权

US06507068B2 Flash memory device and a fabrication process thereof 有权
标题翻译：闪存器件及其制造工艺
公开(公告)号：US06507068B2
公开(公告)日：2003-01-14
申请号：US09160046
申请日：1998-09-25
申请人： Satoshi Takahashi
发明人： Satoshi Takahashi
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L27/115
摘要： A NOR-type flash memory device includes a source region, a drain region and a source line connecting the source region of a memory cell transistor to an source region of an adjacent memory cell transistor in the form of diffusion regions formed in a substrate, wherein the drain region and the source line are formed simultaneously after the step of forming the source region.
摘要翻译： NOR型闪速存储器件包括源区域，漏极区域和将存储单元晶体管的源极区域与形成在衬底中的扩散区域形式的相邻存储单元晶体管的源极区域连接的源极线，其中在形成源极区域的步骤之后同时形成漏极区域和源极线。

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