专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

171. 发明授权

US07459377B2 Method for dividing substrate 失效
标题翻译：基板分割方法
公开(公告)号：US07459377B2
公开(公告)日：2008-12-02
申请号：US11146020
申请日：2005-06-07
申请人： Tetsuzo Ueda , Daisuke Ueda
发明人： Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01L21/44
CPC分类号： H01L21/3043 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0201 , H01S5/0213 , H01S5/34333
摘要： The present invention aims at providing a method for dividing a substrate that is capable of dividing each substrate into chips in the same square-like form without causing chip breaking and capable of forming all cleaved facets flat. In the method for dividing a substrate of the present invention, an electron beam 1 with the intensity that causes a dislocation inside the substrate is irradiated to a substrate surface 2 to generate a crack starting from such dislocation, and a cleaved facet 5 is formed to divide the substrate.
摘要翻译：本发明的目的在于提供一种分割基板的方法，该方法能够将每个基板分成相同方形的芯片，而不会造成断屑并且能够形成所有的切割面平面。在本发明的基板分割方法中，将具有导致基板内的位错的强度的电子束1照射到基板表面2，以从该位错开始产生裂纹，并且形成切割面5 划分基板。

172. 发明申请

US20080277674A1 Semiconductor Light Emitting Device, Lighting Module, Lighting Apparatus, and Manufacturing Method of Semiconductor Light Emitting Device 有权
标题翻译：半导体发光器件，照明模块，照明设备和半导体发光器件的制造方法
公开(公告)号：US20080277674A1
公开(公告)日：2008-11-13
申请号：US10577780
申请日：2004-11-01
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00 , H01L21/00 , H01J1/62
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并且传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过一个电极连接到n电极（20）布线（22）构成为阴极电源端子。

173. 发明申请

US20080179605A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080179605A1
公开(公告)日：2008-07-31
申请号：US11937234
申请日：2007-11-08
申请人： Yuji TAKASE , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Yuji TAKASE , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/465
摘要： A nitride semiconductor light emitting device includes: a dielectric layered film over a substrate, the dielectric layered film being formed by stacking a plurality of dielectric films having different compositions; a semiconductor thin film formed of a single crystal over the dielectric layered film; and a pn junction diode structure over the semiconductor thin film, the pn junction diode structure being formed of a nitride semiconductor.
摘要翻译：氮化物半导体发光器件包括：在衬底上的电介质层压膜，所述电介质层叠膜通过堆叠多个具有不同组成的电介质膜形成; 由介电层叠膜上的单晶形成的半导体薄膜; 以及在半导体薄膜上的pn结二极管结构，pn结二极管结构由氮化物半导体形成。

174. 发明授权

US07391798B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07391798B2
公开(公告)日：2008-06-24
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

175. 发明申请

US20080121938A1 Nitride semiconductor based bipolar transistor and the method of manufacture thereof 有权
标题翻译：氮化物半导体双极晶体管及其制造方法
公开(公告)号：US20080121938A1
公开(公告)日：2008-05-29
申请号：US11812591
申请日：2007-06-20
申请人： Tatsuo Morita , Tetsuzo Ueda
发明人： Tatsuo Morita , Tetsuzo Ueda
IPC分类号： H01L29/739 , H01L21/34
CPC分类号： H01L29/2003 , H01L29/201 , H01L29/66318 , H01L29/7371
摘要： In a nitride semiconductor based bipolar transistor, a contact layer formed so as to contact an emitter layer is composed of n-type InAlGaN quaternary mixed crystals, the emitter layer and the contact layer are selectively removed so that the barrier height with the emitter formed thereon is small, and the ohmic electrode contact resistance can be lowered on the InAlGaN quaternary mixed crystals, for example, so that a WSi emitter electrode becomes an eave. A base electrode is formed by a self-aligned process using the emitter electrode as a mask. By such a configuration, the distance between the emitter and the edge of the base electrode is sufficiently shortened, and the base resistance can be lowered. As a result, a bipolar transistor having favorable high-frequency characteristics can be realized.
摘要翻译：在基于氮化物半导体的双极型晶体管中，形成为与发射极层接触的接触层由n型InAlGaN四元混晶构成，选择性地去除发射极层和接触层，使得其上形成有发射极的势垒高度例如，在InAlGaN四元混晶中的欧姆电极接触电阻可以降低，使得WSi发射极成为檐。通过使用发射电极作为掩模的自对准工艺形成基极。通过这样的结构，能够充分地缩短发射极与基极的边缘之间的距离，能够降低基极电阻。结果，可以实现具有良好的高频特性的双极晶体管。

176. 发明授权

US07279751B2 Semiconductor laser device and manufacturing method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07279751B2
公开(公告)日：2007-10-09
申请号：US11109787
申请日：2005-04-20
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L27/01
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12。 SiO 2阻挡层9形成在InGaN多量子阱有源层5的上方以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

177. 发明申请

US20070210332A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20070210332A1
公开(公告)日：2007-09-13
申请号：US11681408
申请日：2007-03-02
申请人： Hiroaki UENO , Tetsuzo Ueda , Yasuhiro Uemoto , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara , Yutaka Hirose , Masahiro Hikita
发明人： Hiroaki UENO , Tetsuzo Ueda , Yasuhiro Uemoto , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara , Yutaka Hirose , Masahiro Hikita
IPC分类号： H01L31/00
CPC分类号： H01L29/7786 , H01L29/2003
摘要： It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.
摘要翻译：本发明的一个目的是提供一种半导体器件，其可以同时实现HFET的常闭模式和改进的最大值，并进一步实现gm的改善和栅极漏电流的减小。为了在栅电极正下方的基板11的操作层12上保持薄势垒层13，主要用于实现常关模式并且还实现高I max，配置成使得栅极和源极区域之间以及栅极和漏极区域之间的半导体层17可以增加阻挡层13的厚度。因此与阻挡层的厚度被设计为均匀的FET相比，可以实现常关模式和I 的改善。介电常数高于阻挡层的绝缘膜18进一步插入在栅电极16和阻挡层13之间，从而改善gm和栅极漏电流的减小可以实现。

178. 发明申请

US20070057269A1 Phosphor, semiconductor light emitting device, and fabrication method thereof 有权
标题翻译：荧光体，半导体发光器件及其制造方法
公开(公告)号：US20070057269A1
公开(公告)日：2007-03-15
申请号：US11593547
申请日：2006-11-07
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： C09K11/7709 , C09K11/595 , C09K11/646 , C09K11/70 , C09K11/7734 , C09K11/7739 , C09K11/7774 , C09K11/883 , H01L33/0066 , H01L33/505 , H01L2224/14 , Y02B20/181
摘要： A phosphor that emits white light due to excitation by a light emitting diode capable of emitting blue or ultraviolet light includes: a substrate that allows transmission of visible light; and a semiconductor layer formed on the substrate.
摘要翻译：由能够发射蓝色或紫外光的发光二极管的激发而发出白光的荧光体包括：允许透射可见光的基板; 以及形成在所述基板上的半导体层。

179. 发明授权

US07173277B2 Semiconductor light emitting device and method for fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07173277B2
公开(公告)日：2007-02-06
申请号：US10717557
申请日：2003-11-21
申请人： Satoshi Tamura , Tetsuzo Ueda
发明人： Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L29/04 , H01L29/24 , H01L27/15
CPC分类号： H01L33/42 , H01L33/32
摘要： A semiconductor light emitting device includes a semiconductor multilayer structure comprising a plurality of Group III–V nitride semiconductor layers including two semiconductor layers of different conductivity types, and a transparent electrode formed on the semiconductor multilayer structure. The transparent electrode contains an impurity element developing the same conductivity type as that of an impurity element introduced into a semiconductor in the semiconductor multilayer structure, which semiconductor has an interface with the transparent electrode. Therefore, contact resistance between the transparent electrode and the semiconductor having the interface with the transparent electrode is decreased.
摘要翻译：半导体发光器件包括包括多个III-V族氮化物半导体层的半导体多层结构，所述III-V族氮化物半导体层包括不同导电类型的两个半导体层，以及形成在半导体多层结构上的透明电极。透明电极含有与半导体层叠结构中的半导体中引入的杂质元素的导电类型相同的杂质元素，该半导体与透明电极具有界面。因此，透明电极与具有与透明电极的界面的半导体之间的接触电阻降低。

180. 发明申请

US20060273347A1 Field-effect transistor and method for fabricating the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060273347A1
公开(公告)日：2006-12-07
申请号：US11433734
申请日：2006-05-15
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L31/00
CPC分类号： H01L29/7786 , H01L29/0843 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/66462 , H01L29/7783
摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.
摘要翻译：依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。栅电极与重掺杂的p型GaN层形成欧姆接触。源电极和漏电极设置在未掺杂的AlGaN层上。通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式