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    • 141. 发明申请
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US20090026547A1
    • 2009-01-29
    • US12219415
    • 2008-07-22
    • Hong-Ji LeeSung-Jin Kim
    • Hong-Ji LeeSung-Jin Kim
    • H01L21/8234H01L27/088
    • H01L21/823425H01L21/823437
    • A semiconductor device includes an active region extending along a first direction on a semiconductor substrate, the active region having a first sidewall and a second sidewall spaced apart and facing each other, a distance between the first and second sidewalls extending along a second direction, and a gate on the active region, the gate having a pair of body portions extending along the second direction and being spaced apart from each other, the second direction being perpendicular to the first direction, a head portion extending along the first direction to connect the body portions, the head portion overlapping a portion of the first sidewall, and a plurality of tab portions protruding from sidewalls of the body portions, the tab portions extending along the first direction and overlapping a portion of the second sidewall.
    • 半导体器件包括沿着半导体衬底上的第一方向延伸的有源区,所述有源区具有间隔开并面对彼此的第一侧壁和第二侧壁,所述第一和第二侧壁之间的距离沿着第二方向延伸,以及 在所述有源区域上的栅极,所述栅极具有沿着所述第二方向延伸并且彼此间隔开的一对主体部分,所述第二方向垂直于所述第一方向,头部部分沿着所述第一方向延伸以连接所述主体 所述头部与所述第一侧壁的一部分重叠,以及从所述主体部分的侧壁突出的多个突片部分,所述突出部分沿着所述第一方向延伸并与所述第二侧壁的一部分重叠。
    • 142. 发明申请
    • METHOD OF MANUFACTURING FLASH MEMORY DEVICE
    • 制造闪存存储器件的方法
    • US20090023278A1
    • 2009-01-22
    • US12146183
    • 2008-06-25
    • Sung-Jin Kim
    • Sung-Jin Kim
    • H01L21/28
    • H01L27/11521H01L21/28273H01L27/115
    • A method of manufacturing a flash memory device that may include forming a dielectric film pattern on a semiconductor substrate; etching the semiconductor substrate using the dielectric film pattern as a mask to form a trench; forming a first dielectric film on the semiconductor substrate including the trench; performing a wet etching process on the semiconductor substrate formed with the first dielectric film; forming a second dielectric film on the semiconductor substrate; performing a planarization process on the first and second dielectric films; and removing the dielectric film pattern. Therefore, a generation of void may be prevented when forming a device isolation film and also when forming an interlayer dielectric film.
    • 一种制造闪存器件的方法,其可以包括在半导体衬底上形成电介质膜图案; 使用电介质膜图案作为掩模蚀刻半导体衬底以形成沟槽; 在包括所述沟槽的所述半导体衬底上形成第一电介质膜; 对形成有第一电介质膜的半导体衬底进行湿式蚀刻处理; 在所述半导体衬底上形成第二电介质膜; 对所述第一和第二电介质膜进行平坦化处理; 并去除电介质膜图案。 因此,当形成器件隔离膜时以及当形成层间电介质膜时,可以防止产生空隙。