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131. 发明授权

US08001983B2 Cleaning apparatus, coating and developing apparatus, and cleaning method 有权
标题翻译：清洗装置，涂装和显影装置以及清洗方法
公开(公告)号：US08001983B2
公开(公告)日：2011-08-23
申请号：US12716981
申请日：2010-03-03
申请人： Masahiro Fukuda , Taro Yamamoto
发明人： Masahiro Fukuda , Taro Yamamoto
IPC分类号： B08B3/04 , B08B11/02
CPC分类号： H01L21/67051 , H01L21/68742
摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.
摘要翻译：通过真空吸盘42在晶片W与密封容器41的内表面之间形成小间隙，将晶片W保持在气密容器41内的水平位置。向玻璃W的中心部分供给清洗液通过作为流体供给路径5的端部的流体供给口40将晶片W的前表面通过布置在气密容器41的底部的流体排出部44排出，形成为沿着其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部朝向周边部分流动，同时除去附着在晶片W上的微粒，并通过流体排出部这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

132. 发明授权

US07860431B2 Image forming apparatus having a single device for detecting when covers of the apparatus are all closed 有权
标题翻译：具有用于检测装置的盖子的单个装置的图像形成装置全部关闭
公开(公告)号：US07860431B2
公开(公告)日：2010-12-28
申请号：US12591034
申请日：2009-11-05
申请人： Makoto Kitamura , Masahiro Fukuda
发明人： Makoto Kitamura , Masahiro Fukuda
IPC分类号： G03G15/00
CPC分类号： G03G15/50 , B41J29/13 , G03G21/1628 , G03G2221/1687
摘要： An image forming apparatus employs a device that detects the opening and closing of covers. Two covers are pivotally mounted to a body of the image forming apparatus, each of the two covers being movable either to its opening position to open with respect to the image forming apparatus or to its closing position to close with respect to the image forming apparatus. A movable member is positioned at a first position when both the two covers are at their opening positions. A micro switch detects whether the two covers are closed or opened with respect to the image forming apparatus. When one of the two covers has moved to its closing position causing the movable member to move to a second position and the other of the two covers is at its closing position, the detector detects that the two covers are closed.
摘要翻译：图像形成装置采用检测盖的打开和关闭的装置。两个盖可枢转地安装在图像形成装置的主体上，两个盖中的每一个可移动到其打开位置，以相对于图像形成装置打开或者关闭位置，以相对于图像形成装置关闭。当两个盖都处于其打开位置时，可移动部件位于第一位置。微型开关检测两个盖是否相对于图像形成装置关闭或打开。当两个盖中的一个已经移动到其关闭位置，导致可动构件移动到第二位置，并且两个盖中的另一个处于其关闭位置时，检测器检测到两个盖关闭。

133. 发明申请

US20100210083A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100210083A1
公开(公告)日：2010-08-19
申请号：US12690484
申请日：2010-01-20
申请人： Masahiro Fukuda , Yosuke Shimamune , Yuka Kase
发明人： Masahiro Fukuda , Yosuke Shimamune , Yuka Kase
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823412 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/7843 , H01L29/7848
摘要： A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.
摘要翻译：一种制造半导体器件的方法包括在形成于第一有源区和第二有源区的栅电极上形成第一盖膜，在第一有源区上蚀刻第一覆盖膜，在形成于栅电极的栅电极上形成第二帽膜第一有源区和第二有源区，在第一有源区上蚀刻第二覆盖膜，使用栅电极蚀刻第一有源区，以在第一有源区中形成凹部，并将半导体材料埋入凹部。

134. 发明授权

US07712475B2 Cleaning apparatus, coating and developing apparatus, and cleaning method 失效
标题翻译：清洗装置，涂装和显影装置以及清洗方法
公开(公告)号：US07712475B2
公开(公告)日：2010-05-11
申请号：US11345529
申请日：2006-02-02
申请人： Masahiro Fukuda , Taro Yamamoto
发明人： Masahiro Fukuda , Taro Yamamoto
IPC分类号： B08B3/04 , B05C5/00 , B05C5/02 , B05C3/02
CPC分类号： H01L21/67051 , H01L21/68742
摘要： A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.
摘要翻译：通过真空吸盘42在晶片W与密封容器41的内表面之间形成小间隙，将晶片W保持在气密容器41内的水平位置。向玻璃W的中心部分供给清洗液通过作为流体供给路径5的端部的流体供给口40将晶片W的前表面通过布置在气密容器41的底部的流体排出部44排出，形成为沿着其中心位于晶片W的中心轴线上。清洗液体从晶片W的中心部朝向周边部分流动，同时除去附着在晶片W上的微粒，并通过流体排出部这种布置允许在不旋转晶片W的情况下均匀且可靠地除去颗粒。整个清洁装置4具有小尺寸。

135. 发明申请

US20100105184A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100105184A1
公开(公告)日：2010-04-29
申请号：US12572702
申请日：2009-10-02
申请人： Masahiro Fukuda , Yosuke Shimamune
发明人： Masahiro Fukuda , Yosuke Shimamune
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/66772 , H01L29/7833
摘要： A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底上形成栅极绝缘膜和栅电极，通过干蚀刻在栅电极两侧的第一半导体衬底中形成第一凹槽，通过去除底部和第一凹部的侧壁，并且在第二凹部中形成半导体层。

136. 发明申请

US20100068344A1 BEVERAGE PACKED IN CONTAINER 审中-公开
标题翻译：饮料包装在集装箱中
公开(公告)号：US20100068344A1
公开(公告)日：2010-03-18
申请号：US12447664
申请日：2007-06-15
申请人： Masahiro Fukuda , Hirokazu Takahashi , Ryo Kusaka , Eri Itaya
发明人： Masahiro Fukuda , Hirokazu Takahashi , Ryo Kusaka , Eri Itaya
IPC分类号： A23F3/40 , B65D85/72
CPC分类号： A23L2/60 , A23F3/163 , A23L2/52 , A23L27/30 , A23L27/31 , A23L27/34 , A23L27/86
摘要： To reduce the bitterness of a packaged beverage which contains a high concentration of non-polymer catechins, without deteriorating the flavor of the beverage, provided is a packaged beverage including 0.05 to 0.5% by mass of (A) non-polymer catechins and (B) a sweetening agent selected from the following sweetening agents (B1), (B2), (B3), and (B4): (B1) 0.0001 to 0.5% by mass of glycyrrhizin; (B2) 0.00001 to 0.005% by mass of thaumatin; (B3) 0.01 to 5% by mass of (b31) sorbitol and 0.001 to 5% by mass of (b32) a sweetening agent other than sorbitol, in which a ratio of (b32)/(b31) (mass ratio) is 0.01 to 100; and (B4) 0.01 to 5% by mass of (b41) erythritol and 0.01 to 5% by mass of (b42) one or more kinds selected from glucose, fructose, a glucose-fructose syrup, and a fructose-glucose syrup.
摘要翻译：为了降低包含高浓度非聚合型儿茶素类的包装饮料的苦味，不会降低饮料的风味，所提供的包含0.05〜0.5质量％的（A）非聚合型儿茶素类和（B ）选自以下甜味剂（B1），（B2），（B3）和（B4）的甜味剂：（B1）0.0001至0.5质量％的甘草甜素; （B2）0.00001〜0.005质量％的马来酸酐; （B3）0.01〜5质量％的（b31）山梨糖醇和0.001〜5质量％的（b32）山梨糖醇以外的甜味剂（b32）/（b31）（质量比）为0.01 到100; 和（B4）选自葡萄糖，果糖，葡萄糖 - 果糖糖浆和果糖 - 葡萄糖浆中的（b41）赤藓糖醇0.01〜5质量％和（b42）0.01〜5质量％的一种或多种。

137. 发明申请

US20100015774A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100015774A1
公开(公告)日：2010-01-21
申请号：US12564313
申请日：2009-09-22
申请人： Yosuke SHIMAMUNE , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
发明人： Yosuke SHIMAMUNE , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.
摘要翻译：在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。在第二SiGe混晶层上形成第三p型SiGe混晶层。从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

138. 发明申请

US20090094437A1 Method And Device For Controlling Multicore Processor 有权
标题翻译：用于控制多核处理器的方法和装置
公开(公告)号：US20090094437A1
公开(公告)日：2009-04-09
申请号：US12184922
申请日：2008-08-01
申请人： Masahiro Fukuda
发明人： Masahiro Fukuda
IPC分类号： G06F15/163 , G06F9/00
CPC分类号： G06F9/3851 , G06F1/3203 , G06F1/3287 , G06F9/3891 , G06F9/5061 , G06F9/5094 , Y02D10/126 , Y02D10/171 , Y02D10/22 , Y02D10/36
摘要： The present invention provides a method and a device for controlling a multicore processor by selecting and operating the appropriate number of cores corresponding to an operation state of the processor. In a multicore processor having a plurality of cores each independently performing a calculation process on one processor, an operating rate of a thread or task of each core within a predetermined time is calculated by summing the operating times or the number of operating times within a predetermined time, and an overall operating rate of all the cores is found by summing the calculated operating rates. The number of operating cores corresponding to the overall operating rate is determined by a previously set table. The number of cores operating has a hysteresis characteristic in which the number of operating cores is different between increasing and decreasing times of the overall operating rate. Operating cores corresponding to the number of the determined cores are selected by the previously set table. When an exceptional process is detected, all the cores operate. After a predetermined time, when it is determined that the exceptional process is eliminated, the process returns to the original processing.
摘要翻译：本发明提供了一种通过选择和操作与处理器的操作状态对应的适当数量的核来控制多核处理器的方法和装置。在具有多个核心的多核处理器中，每个核心都独立地对一个处理器执行计算处理，通过将预定时间内的操作时间或操作次数相加来计算预定时间内的每个核心的线程或任务的操作速率时间，并且所有核心的总体运行速率是通过对计算出的运行率进行求和来找到的。对应于总运行速率的操作核心数量由先前设置的表确定。操作的核心数量具有滞后特性，其中操作核心的数量在总运行速率的增加和减少时间之间是不同的。对应于确定的核心数量的操作核心是由先前设置的表格选择的。当检测到异常过程时，所有内核都会运行。在预定时间之后，当确定异常处理被消除时，处理返回到原始处理。

139. 发明申请

US20090045471A1 Semiconductor device fabricated by selective epitaxial growth method 有权
标题翻译：通过选择性外延生长法制造的半导体器件
公开(公告)号：US20090045471A1
公开(公告)日：2009-02-19
申请号：US12230373
申请日：2008-08-28
申请人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
发明人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
IPC分类号： H01L47/00
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
摘要翻译：提高外延生长中的选择性的半导体器件。提供了一种半导体器件，其包括形成在作为半导体衬底的Si衬底上的栅电极，其间具有栅极绝缘膜，并且在栅电极的侧面上形成并包含卤素元素的绝缘层。利用该半导体器件，当在Si衬底上形成SiGe层时，在栅电极的侧面上形成含有卤素元素的氮化硅膜。因此，SiGe层以高选择性外延生长在Si衬底上。结果，抑制了在例如栅电极和源极/漏极区域之间流动的截止状态的漏电流，并且建立了适合于实际批量生产的制造工艺。

140. 发明申请

US20070224110A1 Magnesium Aluminum Titanate Crystal Structure and Method for Producing Same 有权
标题翻译：钛酸镁晶体结构及其制造方法
公开(公告)号：US20070224110A1
公开(公告)日：2007-09-27
申请号：US11587991
申请日：2005-04-28
申请人： Tsutomu Fukuda , Masahiro Fukuda , Masaaki Fukuda , Toshinobu Yoko , Masahide Takahashi
发明人： Tsutomu Fukuda , Masahiro Fukuda , Masaaki Fukuda , Toshinobu Yoko , Masahide Takahashi
IPC分类号： C01G23/04
CPC分类号： C04B35/465 , C04B35/478 , C04B2235/3206 , C04B2235/3418 , C04B2235/3463 , C04B2235/3472 , C04B2235/3481 , C04B2235/349 , C04B2235/6562 , C04B2235/77 , C04B2235/96 , C04B2235/9607
摘要： To provide an aluminum magnesium titanate crystal structure which can be used stably in variable high temperatures, because of its excellent heat resistance, thermal shock resistance, high thermal decomposition resistance and high mechanical property, and a process for its production. An aluminum magnesium titanate crystal structure, which is a solid solution wherein at least some of Al atoms in the surface layer of aluminum magnesium titanate crystal represented by the empirical formula MgxAl2(1−x)Ti(1+x)O5 (wherein 0.1≦x
摘要翻译：由于其耐热性，耐热冲击性，高耐热分解性和高机械性能优异，因此可以稳定地在可变高温下使用的钛酸铝镁晶体结构体及其制造方法。一种钛酸镁晶体结构，其是以经验式Mg x Al 2（1-x）表示的钛酸镁镁晶体的表面层中的至少一些Al原子的固溶体， x）Ti（1 + x）O 5（其中0.1 <= x <1）被Si原子取代，并且具有热膨胀系数（1 / K）至6×10 -6（1 / K）的范围为50至800℃，温度升高速度为20℃/分钟，钛酸镁镁的剩余比率为至少50％，当在1100℃的气氛中保持300小时时。

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