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    • 131. 发明授权
    • Method of epitaxial growth of semiconductor
    • 半导体外延生长方法
    • US5373803A
    • 1994-12-20
    • US954341
    • 1992-09-30
    • Takashi NoguchiToshiharu Suzuki
    • Takashi NoguchiToshiharu Suzuki
    • C30B1/02H01L21/20C30B1/06
    • H01L21/2026C30B1/023C30B29/06Y10S117/904Y10S117/913
    • A method of epitaxially growing semiconductor crystal by which a single crystal region which is superior in quality can be selectively formed at a high throughput without employing the lithography technique. A shield mask is formed on an upper face of an amorphous semiconductor layer formed on substrate, and excimer laser light is irradiated upon the amorphous semiconductor layer using the shield mask to produce, in the amorphous semiconductor layer, a core from which crystal is to be grown. After the shield mask is removed, low temperature solid phase annealing processing for the amorphous semiconductor layer is performed to grow crystal from the core to form a single crystal region in the amorphous semiconductor layer. Alternatively, the silicon core is formed by irradiating an energy beam, which is capable of being converged into a thin beam and being used to directly draw a picture, at a predetermined position of the amorphous silicon film.
    • 可以在不使用光刻技术的情况下以高通量选择性地形成质量优异的单晶区域的外延生长半导体晶体的方法。 在形成在基板上的非晶半导体层的上表面上形成屏蔽掩模,并且使用屏蔽掩模将准分子激光照射在非晶半导体层上,以在非晶半导体层中产生晶体为芯的芯 长大的。 在去除屏蔽掩模之后,执行用于非晶半导体层的低温固相退火处理以从芯生长晶体,以在非晶半导体层中形成单晶区域。 或者,通过在非晶硅膜的预定位置照射能够被会聚成薄梁并用于直接绘制图像的能量束来形成硅芯。
    • 132. 发明授权
    • Semiconductor layer annealing method using excimer laser
    • 半导体层退火法使用准分子激光
    • US5219786A
    • 1993-06-15
    • US897089
    • 1992-06-11
    • Takashi Noguchi
    • Takashi Noguchi
    • H01L21/20H01L21/268
    • H01L21/268
    • A semiconductor layer annealing method comprises a step of heating a wafer consisting of a substrate and a semiconductor layer formed thereon by a heating means at a preheating temperature which will not exercise adverse thermal effect on the substrate, heating a portion of a small area of the semiconductor layer by a pulse of an excimer laser beam in one annealing cycle to a temperature higher than the preheating temperature and high enough to anneal the portion of the semiconductor layer, and repeating the annealing cycle to anneal the successive portions of the semiconductor layer sequentially. Since the semiconductor layer is preheated and the excimer laser beam needs only to raise the temperature of the semiconductor layer by a temperature far lower than the annealing temperature, the energy density of the excimer laser beam on the semiconductor layer may be smaller than that required by the prior art semiconductor layer annealing method and hence the area of a portion of the semiconductor layer which can be annealed by the semiconductor layer annealing method is greater than that can be annealed by the prior art semiconductor layer.
    • 半导体层退火方法包括以下步骤:在不会对衬底造成不利的热影响的预热温度下通过加热装置加热由衬底和其上形成的半导体层的晶片,加热部分小面积的 在一个退火循环中通过准分子激光束的脉冲将半导体层转换到高于预热温度的温度,并且足够高以使半导体层的部分退火,并且重复退火循环以顺序地退火半导体层的连续部分。 由于半导体层被预热并且准分子激光束仅需要将半导体层的温度升高到远低于退火温度的温度,所以半导体层上的准分子激光束的能量密度可以小于 现有技术的半导体层退火方法,因此可以通过半导体层退火方法退火的半导体层的一部分的面积大于现有技术的半导体层能退火的半导体层的一部分的面积。
    • 137. 发明申请
    • INDUSTRIAL INSTRUMENT AND MACHINE TOOL
    • 工业仪器和机床
    • US20110156884A1
    • 2011-06-30
    • US12950249
    • 2010-11-19
    • Koji TsuchimochiTakashi Noguchi
    • Koji TsuchimochiTakashi Noguchi
    • G08C19/16
    • G08C19/16
    • A control device of a machine tool includes a first determination unit determining an amount of rotation, rotational speed, and direction of rotation of a rotary handle based on a pulse signal generated by rotation of the rotary handle at a manual pulse generator, and a second determination unit determining which of position control and rotational speed control is selected by selection of an axis through an axis selector switch, based on a signal generated by an axis selection signal generator at an operation device including the manual pulse generator. When a determination is made that position control is selected, the control device controls the amount and direction of travel of a spindle based on the amount of rotation and direction of rotation of the rotary handle. When a determination is made that rotational speed control is selected, the control device controls the rotational speed and direction of rotation of a table based on the rotational speed and direction of rotation of the rotary handle. Accordingly, the user can readily set the direction of rotation and rotational speed of the table using the manual pulse generator, and cause the table to move at the set direction of rotation and rotational speed.
    • 机器的控制装置包括:第一确定单元,其基于由手动脉冲发生器处的旋转手柄的旋转产生的脉冲信号,确定旋转手柄的旋转量,旋转速度和旋转方向;第二确定单元, 确定单元,基于在包括手动脉冲发生器的操作装置处由轴选择信号发生器产生的信号,通过轴选择器开关选择轴来确定位置控制和转速控制中的哪一个。 当确定选择位置控制时,控制装置基于旋转手柄的旋转量和旋转方向来控制主轴的行进量和方向。 当确定选择转速控制时,控制装置基于旋转手柄的旋转速度和旋转方向来控制工作台的旋转速度和旋转方向。 因此,用户可以使用手动脉冲发生器容易地设定工作台的旋转方向和转速,并使工作台沿设定的旋转方向和转速移动。
    • 139. 发明授权
    • Organic electroluminescent display and method of fabricating the same
    • 有机电致发光显示器及其制造方法
    • US07709842B2
    • 2010-05-04
    • US11624273
    • 2007-01-18
    • Ji-sim JungJany-yeon KwonJong-man KimKyung-bae ParkTakashi Noguchi
    • Ji-sim JungJany-yeon KwonJong-man KimKyung-bae ParkTakashi Noguchi
    • H01L31/00H01L27/14
    • H01L27/3244H01L27/1255H01L27/3265
    • An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.
    • 有机电致发光显示器(“OELD”)包括有机发光二极管(“OLED”),电路区域和层间电介质(“ILD”)层。 OLED布置在布置在基板上的多个像素中的每一个中。 电路区域包括两个或多个薄膜晶体管(“TFT”)和存储电容器。 ILD层具有两个以上的绝缘层,并且包括设置在存储电容器的两个电极之间的第一区域和覆盖TFT的第二区域。 绝缘层中的至少一个具有将绝缘层直接暴露在至少一个绝缘层下方的窗口,使得ILD层在第一区域比在第二区域更薄。 因此,可以在保持存储电容器的必要电容并扩大发光区域的面积的同时减小存储电容器的占用面积。