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131. 发明申请

US20050107383A1 3-ARYLPHENYL SULFIDE DERIVATIVE AND INSECTICIDE AND MITICIDE 有权
公开(公告)号：US20050107383A1
公开(公告)日：2005-05-19
申请号：US10981722
申请日：2004-11-05
申请人： Keiji Toriyabe , Nobuo Takefuji , Minoru Itou , Tetsuya Hirade , Kiyotoshi Nishiyama , Mitsuharu Asahida , Yasunobu Maeda , Nobuhide Wada , Toyokazu Fujisawa , Hiroyuki Yano , Masaaki Komatsu , Osamu Tada
发明人： Keiji Toriyabe , Nobuo Takefuji , Minoru Itou , Tetsuya Hirade , Kiyotoshi Nishiyama , Mitsuharu Asahida , Yasunobu Maeda , Nobuhide Wada , Toyokazu Fujisawa , Hiroyuki Yano , Masaaki Komatsu , Osamu Tada
IPC分类号： A01N41/10 , A01N43/08 , A01N43/10 , A01N43/40 , A01N43/54 , A01N43/56 , A01N43/58 , A01N43/60 , A01N43/76 , A01N43/78 , A61K31/4164 , A61K31/4196 , A61K31/445 , A61K31/495 , A61K31/498 , A61K31/50 , A61K31/513 , A61K31/53 , C07C309/00 , C07C317/14 , C07C317/22 , C07C317/32 , C07C323/09 , C07C323/18 , C07C323/31 , C07D211/54 , C07D213/52 , C07D213/57 , C07D213/64 , C07D231/12 , C07D249/08 , C07D253/00 , C07D263/32 , C07D277/26 , C07D307/56 , C07D333/24 , C07D333/28
CPC分类号： C07D213/12 , A01N31/08 , A01N31/14 , A01N33/10 , A01N37/08 , A01N37/34 , A01N41/10 , A01N43/08 , A01N43/10 , A01N43/40 , A01N43/54 , A01N43/56 , A01N43/653 , A01N43/76 , A01N43/78 , A01N47/18 , C07C317/32 , C07C317/48 , C07C323/18 , C07C323/20 , C07C323/36 , C07C323/63 , C07D213/32 , C07D213/48 , C07D213/57 , C07D213/64 , C07D239/36 , C07D239/38 , C07D239/40 , C07D249/08 , C07D333/24
摘要： 3-Arylphenyl sulfide derivatives represented by general formula (I): (wherein R is a C2-C6 alkyl group, a C2-C6 alkenyl group, a C2-C6 alkynyl group or the like, B0 to B2 and B3 are hydrogen atoms, halogen atoms, cyano groups, C1-C4 haloalkyl groups or the like, n is 0, 1 or 2, and Ar is a phenyl ring, a pyridine ring, a thiophene ring, a pyrazole ring or the like), and insecticides and miticides containing the 3-arylphenyl sulfide derivatives as an active ingredient.
摘要翻译：由通式（I）表示的3-芳基苯基硫醚衍生物：其中R是C 2 -C 6烷基，C 2 - -C 6亚烷基，C 2 -C 6亚炔基等，B 0〜B 2个和3个3个是氢原子，卤素原子，氰基，C 1 -C 4卤代烷基或 n为0,1或2，Ar为苯环，吡啶环，噻吩环，吡唑环等），含有3-芳基苯基硫醚衍生物的杀虫剂和杀螨剂为活性成分。

132. 发明申请

US20050067730A1 High strength material using cellulose micro-fibril 有权
标题翻译：高强度材料使用纤维素微纤维
公开(公告)号：US20050067730A1
公开(公告)日：2005-03-31
申请号：US10499420
申请日：2002-12-26
申请人： Hiroyuki Yano , Susumu Nakahara
发明人： Hiroyuki Yano , Susumu Nakahara
IPC分类号： D21H15/02 , D21C5/02 , D21H11/18 , D21H17/20 , D21H17/28 , D21H17/33 , D21H25/04 , D21J1/12 , B27N3/04 , B27N3/08 , C08L1/00
CPC分类号： D21J1/12 , D21C5/02 , D21H11/18 , Y02W30/648 , Y10T428/2965
摘要： The present invention relates to a high strength material and a high strength molded article comprising 65 to 100 wt. % of cellulose microfibrils; and products comprising these. The material, which is lightweight and has a very high strength, can be used for various purposes and can be produced by recycling wastepaper, used cloth and the like. Furthermore, by appropriately selecting the type and/or amount of binder, the material comprising microfibrils as a main component can be decomposed by microbes or the like after being dumped as waste, and is thus friendly to the global environment.
摘要翻译：本发明涉及一种高强度材料和高强度模塑制品，其包含65至100wt。％的纤维素微原纤维; 和包含这些的产品。轻质且具有非常高的强度的材料可以用于各种目的，并且可以通过回收废纸，二手布等来制造。此外，通过适当选择粘合剂的种类和/或量，以微纤维为主要成分的材料在作为废弃物倾倒之后可以被微生物等分解，因此对于全球环境是友好的。

133. 发明授权

US06858539B2 Post-CMP treating liquid and method for manufacturing semiconductor device 有权
标题翻译：后CMP处理液和半导体装置的制造方法
公开(公告)号：US06858539B2
公开(公告)日：2005-02-22
申请号：US10330105
申请日：2002-12-30
申请人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
IPC分类号： H01L21/3205 , C09G1/02 , H01L21/02 , H01L21/304 , H01L21/321 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212
摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.
摘要翻译：公开了包含水的后CMP处理液，分散在水中的树脂粒子，在其表面具有官能团，或由水，分散在水中的树脂粒子构成的具有官能团的添加剂，水。后CMP处理液的绝缘膜和导电膜的抛光速度为10nm / min以下。

134. 发明授权

US06794285B2 Slurry for CMP, and method of manufacturing semiconductor device 失效
标题翻译：用于CMP的浆料和半导体器件的制造方法
公开(公告)号：US06794285B2
公开(公告)日：2004-09-21
申请号：US10706052
申请日：2003-11-13
申请人： Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano
发明人： Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L214763
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： There is disclosed a CMP slurry which comprises a solvent, abrasive grains, and a silicone-based surfactant having an HLB value ranging from 7 to 20.
摘要翻译：公开了一种CMP浆料，其包含溶剂，磨粒和HLB值为7至20的硅氧烷基表面活性剂。

135. 发明授权

US06740590B1 AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING 有权
标题翻译：用于制造半导体器件的化学机械抛光的水性分散体，用于制造半导体器件的方法和用于形成嵌入式布线的方法
公开(公告)号：US06740590B1
公开(公告)日：2004-05-25
申请号：US09531163
申请日：2000-03-17
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Akira Iio , Masayuki Hattori
IPC分类号： H01L21302
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.
摘要翻译：本发明的目的是提供一种水性分散体，其可以为包括电子材料，磁性材料，光学材料和抛光材料在内的广泛用途提供所需的性能，并提供用于化学机械抛光的水性分散体（CMP浆料），其提供足够的抛光速率，而不会在抛光表面中产生划痕。本发明的另一个目的是提供一种使用CMP浆料制造半导体器件的方法，所述CMP浆料可以在抛光期间控制由划痕等引起的逐渐侵蚀，并且可以实现工作膜的有效平坦化，并提供一种方法形成嵌入式布线。本发明的水性分散体或CMP浆料含有由热塑性树脂等构成的聚合物颗粒和由氧化铝，二氧化硅等制成的无机颗粒，其中聚合物颗粒和无机颗粒的ζ电位具有相反的标志，它们通过静电力结合以形成作为复合颗粒的聚集体。聚集体用均化器进行超声波照射或剪切应力，得到更均匀分散的复合颗粒。

136. 发明授权

US06722964B2 Polishing apparatus and method 有权
标题翻译：抛光设备和方法
公开(公告)号：US06722964B2
公开(公告)日：2004-04-20
申请号：US09824644
申请日：2001-04-04
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuya Okumura , You Ishii , Junji Kunisawa , Hiroyuki Yano
IPC分类号： B24B100
CPC分类号： B24B37/345 , B24B9/065 , B24B37/12 , H01L21/67046
摘要： A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.
摘要翻译：抛光装置和方法具有将形成在基板上的膜的表面抛光至平面镜面的功能，以及抛光沉积在基板的外周部分上的不需要的金属膜如铜膜的功能，以去除这种不必要的金属电影。抛光装置包括表面抛光机构，其包括具有抛光表面的抛光台和用于保持基板的顶环，并将基板压靠在抛光台的抛光表面上，从而抛光基板的表面，以及外周抛光用于抛光衬底的外周部分的机构。

137. 发明授权

US06576554B2 Slurry for CMP, method of forming thereof and method of manufacturing semiconductor device including a CMP process 失效
公开(公告)号：US06576554B2
公开(公告)日：2003-06-10
申请号：US09903533
申请日：2001-07-13
申请人： Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano , Dai Fukushima
发明人： Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano , Dai Fukushima
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , C11D3/14 , C11D11/0047
摘要： A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.

138. 发明授权

US06409780B1 Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 有权
标题翻译：气相处理无机氧化物颗粒的含水固体物质和用于半导体器件的抛光和制造方法的浆料
公开(公告)号：US06409780B1
公开(公告)日：2002-06-25
申请号：US09482937
申请日：2000-01-14
申请人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
发明人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
IPC分类号： C09K314
CPC分类号： C09G1/02 , C09K3/1463
摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
摘要翻译：提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

139. 发明授权

US06337280B1 Polishing cloth and method of manufacturing semiconductor device using the same 失效
公开(公告)号：US06337280B1
公开(公告)日：2002-01-08
申请号：US09306758
申请日：1999-05-07
申请人： Hiroyuki Yano
发明人： Hiroyuki Yano
IPC分类号： H01L21302
CPC分类号： B24B37/24 , B24B37/042 , B24B37/26 , B24D3/34 , H01L21/3212
摘要： A polishing cloth used for a chemical mechanical polishing comprises a base body holding a slurry on the surface and serving to mechanically polish the surface of a target object to be polished. Fine particles soluble in a solvent are dispersed in the base body.

140. 发明授权

US06312321B1 Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US06312321B1
公开(公告)日：2001-11-06
申请号：US09494656
申请日：2000-01-31
申请人： Dai Fukushima , Hiroyuki Yano , Gaku Minamihaba
发明人： Dai Fukushima , Hiroyuki Yano , Gaku Minamihaba
IPC分类号： B24B100
CPC分类号： B24B37/11 , B24D3/346
摘要： The CMP apparatus including a polishing pad having functional groups charged at an opposite polarity to that of the abrasives in the slurry, on its surface is used, so as to eliminate unnecessary Cu film (Cu wiring) and TaN film (barrier metal film) present outside the damascene wiring, by polishing.
摘要翻译：使用包括在其表面上具有与浆料中的研磨剂的极性相反的官能团的抛光垫的CMP装置，以消除存在的不必要的Cu膜（Cu布线）和TaN膜（阻挡金属膜）外面的镶嵌线，抛光。

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