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121. 发明授权

US4288495A Article coated with beta silicon carbide and silicon 失效
标题翻译：文章涂有β碳化硅和硅
公开(公告)号：US4288495A
公开(公告)日：1981-09-08
申请号：US118709
申请日：1980-02-04
申请人： Leslie L. Terner , Roy L. Van Alsten , David Moskowitz
发明人： Leslie L. Terner , Roy L. Van Alsten , David Moskowitz
IPC分类号： B23B27/14 , C04B41/50 , C23C4/04 , C23C4/06 , B05D1/08 , B32B9/04 , B32B13/04 , C01B31/36
CPC分类号： C23C4/04 , B23B27/148 , C04B41/5059 , C23C4/06 , Y10S60/909
摘要： This application discloses a new powder composition which may be plasma sprayed onto the surface of an article to provide a protective coating therefor. The protective coating may be resistant to heat, wear, and corrosion. The coating may also provide a thermal or radiation barrier.In particular, the coating composition for arc plasma spraying consists of finely divided silicon carbide mixed with finely divided silicon. This coating composition is applied to a substrate by developing a plasma spray, feeding the coating composition to the plasma spray and directing the plasma spray at an exposed surface of the substrate so that the exposed substrate is coated with a coating which consists essentially of beta silicon carbide and silicon.The new article of manufacture disclosed in this application, is a substrate with a tightly adherent coating thereon consisting essentially of beta silicon carbide and silicon. The substrate may be any material, either metallic or non-metallic, to which the coating adheres. The coating may provide the substrate with wear resistant characteristics as, for example, if the substrate is to be used for machining metals or as a valve seat in an aluminum engine. The substrate, with the coating thereon, may be used to withstand severe temperatures as, for example, in rocket nozzles and other areas where a substrate would be subjected to extreme temperatures.
摘要翻译：本申请公开了一种新的粉末组合物，其可以被等离子体喷涂在制品的表面上以提供其保护涂层。保护涂层可以耐热，耐磨和耐腐蚀。涂层还可以提供热或辐射屏障。特别地，用于电弧等离子体喷涂的涂料组合物是由精细分散的碳化硅与细分散的硅混合。通过显影等离子喷涂将该涂料组合物施加到基材上，将涂料组合物进料到等离子喷涂中，并将等离子喷涂引导到基板的暴露表面，使得暴露的基材涂覆有基本上由β硅碳化物和硅。本申请中公开的新制品是其上具有紧密粘附的基材，其基本上由β碳化硅和硅组成。衬底可以是涂层粘附到的任何金属或非金属材料。涂层可以为基材提供耐磨特性，例如，如果基材用于加工金属或作为铝发动机中的阀座。具有其上的涂层的基底可以用于承受诸如火箭喷嘴和基板将经受极端温度的其它区域的严酷的温度。

122. 发明授权

US4153527A Manufacture of carbides and the like 失效
公开(公告)号：US4153527A
公开(公告)日：1979-05-08
申请号：US872422
申请日：1978-01-26
申请人： Herbert Greenewald, Jr.
发明人： Herbert Greenewald, Jr.
IPC分类号： C01B21/068 , C01B31/30 , C01B31/36 , H05B7/101 , H05B7/22 , B01K1/00
CPC分类号： H05B7/101 , C01B21/0685 , C01B31/30 , C01B31/36 , H05B7/22 , C01P2002/60 , C01P2004/50 , C01P2004/62
摘要： A metal processing furnace of the indirect arc type having opposed electrodes projected into and establishing an ionized atmosphere in the furnace crucible is provided with apparatus that introduces a finely divided charge mixture consisting essentially of silica and coke into the system for free-fall into and through the ionized atmosphere. Following reaction of the mixture's ingredients in the ionized atmosphere, silicon carbide crystals are deposited at the bottom of the furnace interior below the ionized atmosphere for subsequent collection and removal from within the furnace system. By control of charge composition and process parameters, silicon carbide crystals having predominantly either alpha or beta crystalline structures and with crystal sizes predominantly in the range of 250 to 3,000 microns are produced.

123. 发明授权

US4067955A Method of forming a silicon carbide article 失效
标题翻译：形成碳化硅制品的方法
公开(公告)号：US4067955A
公开(公告)日：1978-01-10
申请号：US619428
申请日：1975-10-03
申请人： Jack E. Noakes , Hiroshi Sato , Leslie L. Terner
发明人： Jack E. Noakes , Hiroshi Sato , Leslie L. Terner
IPC分类号： C04B35/573 , C01B31/36
CPC分类号： C04B35/573
摘要： A method of forming a silicon carbide article is disclosd. Selected weight percentages of silicon carbide particles, graphite particles, if desired, and a thermosetting binder are mixed together and molded into an article by molding techniques which operate on the basis that the thermosetting binder forms a continuous medium about all the particles supported therein. The molded article is heated in the absence of oxygen and the thermosetting binder breaks down to form a low density, vitreous carbon phase. The article is heated in the absence of oxygen to a selected temperature at which the article is maintained for a period of time in a gaseous environment consisting of nitrogen preferably with a small amount of hydrogen therein. The hydrogen-nitrogen treatment is effective to cleanse the article and insure that there is an adequate pore structure through the article for a later siliciding operation to be carried out thereon. The article is silicided at an elevated temperature by penetration of the article through its pore structure with a reactable form of silicon.
摘要翻译：公开了一种形成碳化硅制品的方法。如果需要，将碳化硅颗粒，石墨颗粒和热固性粘合剂的选定重量百分比混合在一起并通过模制技术模制成制品，其基于热固性粘合剂围绕其中所载着的所有颗粒形成连续介质而工作。模制品在不存在氧气的情况下被加热，并且热固性粘合剂分解形成低密度的玻璃碳相。在不存在氧气的情况下将制品加热至选定的温度，在该温度下，在由氮气优选以其中少量的氢气组成的气体环境中将物品保持一段时间。氢氮处理对于清洁制品是有效的，并且确保通过制品具有足够的孔结构以进行其后的硅化操作。该制品在升高的温度下通过物品穿过其孔结构以可反应形式的硅进行硅化。

124. 发明授权

US4054708A Film of pyrolytic graphite having bi-directional reinforcing properties 失效
标题翻译：具有双向增强性能的热解石墨膜
公开(公告)号：US4054708A
公开(公告)日：1977-10-18
申请号：US579667
申请日：1975-05-21
申请人： William A. Robba , Robert W. Froberg
发明人： William A. Robba , Robert W. Froberg
IPC分类号： C01B21/064 , C01B31/30 , C01B31/36 , C01B33/02 , C01B35/02 , C04B35/52 , C04B35/583 , C04B35/584 , C23C16/01 , C01B31/04 , B29J1/00 , C03B18/02
CPC分类号： C23C16/01 , C01B21/064 , C01B31/30 , C01B31/36 , C01B33/02 , C01B35/023 , C04B35/522 , C04B35/583 , C04B35/584 , C01P2004/51 , C01P2004/61 , C01P2004/80 , C01P2006/80
摘要： A thin film of substantially defect-free pyrolytic graphite, useful as a bi-directional reinforcing material, is formed by vapor deposition on an inert liquid substrate surface and separated therefrom. The substrate temperature is substantially below the melting point of the refractory material and the substrate surface is smooth and free of stress to enable formation of a substantially defect-free film. Thin films of other refractory materials can be made similarly by first forming a pyrolytic graphite film on the substrate, and then vapor depositing a film of refractory material on the pyrolytic graphite surface. The pyrolytic graphite and refractory material films are then separated from the substrate surface and then separated from each other. Various refractory film materials can be made including pyrolytic grahite; boron; silicon; and refractory carbides, borides and nitrides. For making pyrolytic graphite films, it is preferable to use tin as the ubstrate, at a temperature of about 1600-1800.degree. C., at atmospheric pressure, a source gas consisting of methane and argon, helium, or hydrogen, and a film residence time on the substrate surface of about 0.16-2 minutes.
摘要翻译：通过气相沉积在惰性液体基材表面上并与其分离，形成可用作双向增强材料的基本无缺陷的热解石墨薄膜。衬底温度基本上低于耐火材料的熔点，并且衬底表面光滑并且没有应力以形成基本上无缺陷的膜。可以类似地制备其它耐火材料的薄膜，首先在基材上形成热解石墨膜，然后在热解石墨表面上气相沉积耐火材料薄膜。然后将热解石墨和耐火材料膜与基材表面分离，然后彼此分离。可以制备各种耐火薄膜材料，包括热解青蒿素; 硼; 硅; 耐火碳化物，硼化物和氮化物。为了制造热解石墨膜，优选在大气压下在约1600-1800℃的温度下使用锡作为底物，由甲烷和氩气，氦或氢组成的源气体和膜住宅时间在衬底表面上约0.16-2分钟。

125. 发明授权

US4013503A Filamentary silicon carbide crystals by VLS growth in molten iron 失效
标题翻译：通过VLS在铁水中生长的丝状碳化硅晶体
公开(公告)号：US4013503A
公开(公告)日：1977-03-22
申请号：US599087
申请日：1975-07-25
申请人： Wilhelmus Franciscus Knippenberg , Gerrit Verspui
发明人： Wilhelmus Franciscus Knippenberg , Gerrit Verspui
IPC分类号： C04B35/80 , B01D39/06 , C01B31/36 , C04B35/622 , C30B11/12 , C30B25/00 , C30B29/36 , C30B29/62 , B01J17/26 , B01J17/32
CPC分类号： C30B29/36 , B01D39/06 , C01B31/36 , C04B35/62227 , C30B11/12 , C30B25/005 , C01P2004/10 , C01P2004/61 , Y10S264/19
摘要： A method of growing silicon carbide whiskers from a gaseous phase by means of a vapor-liquid-solid mechanism on a substrate using iron in a finely divided state as a solvent for the silicon carbide.
摘要翻译：通过气相 - 液固固定机制在碳化硅晶须上生长碳化硅晶须的方法，该方法使用细碎状态的铁作为碳化硅的溶剂。

126. 发明授权

US3989883A Furnace installation operated by direct electrical heating according to the resistance principle, in particular for the preparation of silicon carbide 失效
标题翻译：炉安装通过直接电加热操作，根据电阻原理，特别是用于制备碳化硅
公开(公告)号：US3989883A
公开(公告)日：1976-11-02
申请号：US531221
申请日：1974-12-10
申请人： Gunter Wiebke , Ludwig Korndorfer , Eugen Korndorfer , Andreas Korsten , Theodor Benecke , Fritz Petersen
发明人： Gunter Wiebke , Ludwig Korndorfer , Eugen Korndorfer , Andreas Korsten , Theodor Benecke , Fritz Petersen
IPC分类号： H05B3/62 , C01B31/36 , F27B21/00 , F27D11/04 , H05B3/60
CPC分类号： C01B31/36 , H05B3/60 , C01P2006/60
摘要： An electrical resistance furnace installation, especially for the production of silicon carbide, has no side walls. In the one arrangement, the installation has two end walls, each provided with an electrode, with the resistive core for heating reacting valves extending between the electrodes at the end wall. In another arrangement, the installation has only one end wall, with the resistive core extending between an electrode in the one end wall, and a connection to a further electrode arranged in the bottom of the furnace. In a still further arrangement, the furnace has neither end walls nor side walls, and the resistive core is horizontally supported above the furnace floor and electrically connected through electrodes in the bottom of the furnace. The reacting ballast, in each embodiment, is poured onto the furnace floor to surround the resistive core for heating of the ballast.
摘要翻译：特别是用于生产碳化硅的电阻炉安装没有侧壁。在一种布置中，安装具有两个端壁，每个端壁设有电极，电阻芯用于加热在端壁处的电极之间延伸的反应阀。在另一种布置中，安装件仅具有一个端壁，电阻芯在一个端壁中的电极之间延伸，并且连接到设置在炉底部的另一个电极。在另一方面，炉子既没有端壁也没有侧壁，并且电阻芯水平地支撑在炉底上方并且通过炉底部的电极电连接。在每个实施例中，将反应式镇流器倾倒在炉底上以包围用于加热镇流器的电阻芯。

127. 发明授权

US3962406A Method of manufacturing silicon carbide crystals 失效
标题翻译：制造碳化硅晶体的方法
公开(公告)号：US3962406A
公开(公告)日：1976-06-08
申请号：US280763
申请日：1972-08-15
申请人： Wilhelmus Franciscus Knippenberg , Gerrit Verspui
发明人： Wilhelmus Franciscus Knippenberg , Gerrit Verspui
IPC分类号： B66C23/62 , B66F3/22 , C01B31/36 , C30B29/36
CPC分类号： C01B31/36 , B66C23/62 , B66F3/22 , C30B29/36 , C01P2002/52 , C01P2002/54 , C01P2004/20 , C01P2006/12 , Y10S148/073 , Y10S148/148
摘要： A method of manufacturing silicon carbide crystals in which a core of silicon dioxide is embedded in a mass of granular silicon carbide, or materials which form silicon carbide on heating this mass being heated to a temperature at which silicon dioxide volatilizes, i.e. above about 1500.degree.C, and the silicon carbide coheres. This leaves a cavity, formerly occupied by the silicon dioxide which is surrounded by silicon carbide. Heating is then continued at a temperature, above about 2500.degree.C, at which silicon carbide crystals are formed on the walls of the cavity.
摘要翻译：一种制造碳化硅晶体的方法，其中将二氧化硅芯嵌入颗粒状碳化硅块中，或者在将该物质加热至二氧化硅挥发的温度即高于约1500℃时形成碳化硅的材料 C和碳化硅结合。这留下了原来由被碳化硅包围的二氧化硅占据的空腔。然后在高于约2500℃的温度下继续加热，在该温度下在空腔的壁上形成碳化硅晶体。

128. 发明授权

US3947550A Method of making a silicon carbide article of less than full density 失效
标题翻译：制造小于全密度的碳化硅制品的方法
公开(公告)号：US3947550A
公开(公告)日：1976-03-30
申请号：US389760
申请日：1973-08-20
申请人： Douglas R. Fitchmun
发明人： Douglas R. Fitchmun
IPC分类号： C01B31/36 , C04B35/573
CPC分类号： C04B35/573 , C01B31/36 , C01P2006/10 , C01P2006/90
摘要： This disclosure teaches a method of making a silicon carbide article of less than full density. A mixture of silicon carbide particles, silicon particles and a thermosetting polymeric material are molded to form an article as a green body. The green body is pyrolyzed to change the polymer into carbon and the carbon is then changed into silicon carbide by the silicon contained in the mixture.
摘要翻译：该公开内容教导了制造小于全密度的碳化硅制品的方法。将碳化硅颗粒，硅颗粒和热固性聚合物材料的混合物模制成生物体作为生坯。将生坯热解以将聚合物改变为碳，然后通过混合物中所含的硅将碳变成碳化硅。

129. 发明授权

US3933984A Process of manufacturing whisker crystalline silicon carbide 失效
标题翻译：制造晶须结晶碳化硅的工艺
公开(公告)号：US3933984A
公开(公告)日：1976-01-20
申请号：US125469
申请日：1971-03-18
申请人： Isao Kimura , Hidetsugu Habata
发明人： Isao Kimura , Hidetsugu Habata
IPC分类号： C30B25/00 , C01B31/36
CPC分类号： C30B25/005 , C30B29/36
摘要： Whisker crystalline silicon carbide is prepared by heating a silicon-containing material for example, elemental silicon, silicon oxides, silicon hydroxides, silicon salts and the like with a halogen and carbon-containing material, such as a mixture of hydrocarbon and chlorine-containing material selected from chlorine, hydrogen chloride, tetrachloromethane and phosgene and halogenated hydrocarbon at a temperature of 800.degree.C or higher under a substantial oxygen and nitrogen gas-free condition.
摘要翻译：通过用含卤素和含碳材料如烃和含氯材料的混合物加热含硅材料例如元素硅，氧化硅，氢氧化硅，硅盐等来制备晶须碳化硅选自氯，氯化氢，四氯甲烷和光气，卤代烃在800℃或更高的温度下，在大量无氮和无氮气条件下进行。

130. 发明授权

US3914371A Method for preparing boron-carbide articles 失效
标题翻译：碳化硼制品的制备方法
公开(公告)号：US3914371A
公开(公告)日：1975-10-21
申请号：US42892773
申请日：1973-12-27
申请人： US ENERGY
发明人： BENTON SAMUEL T , MASTERS DAVID R
IPC分类号： C04B35/563 , F27B9/04 , C01B31/36 , C04B35/52 , C04B35/60
CPC分类号： C04B35/563 , C04B35/645
摘要： The present invention is directed to the preparation of boroncarbide articles of various configurations. A stoichiometric mixture of particulate boron and carbon is confined in a suitable mold, heated to a temperature in the range of about 1,250* to 1,500*C. for effecting a solid state diffusion reaction between the boron and carbon for forming the boron carbide (B4C), and thereafter the resulting boron-carbide particles are hot-pressed at a temperature in the range of about 1,800* to 2,200*C. and a pressure in the range of about 1,000 to 4,000 psi for densifying and sintering the boron carbide into the desired article.
摘要翻译：本发明涉及制备具有各种构型的碳化硼制品。将颗粒状硼和碳的化学计量混合物限制在合适的模具中，加热到约1,250℃至1500℃的温度，以进行用于形成碳化硼的硼和碳之间的固态扩散反应（B4C ），然后将所得碳化硼颗粒在约1800至2200℃的温度范围内热压，并且在约1,000至4,000psi范围内的压力进行热压，以将碳化硼致密并烧结成想要的文章。

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