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    • 123. 发明申请
    • High frequency plasma generator and high frequency plasma generating method
    • 高频等离子体发生器和高频等离子体发生方法
    • US20050241768A1
    • 2005-11-03
    • US10519553
    • 2003-10-01
    • Keisuke KawamuraAkira YamadaHiroshi MashimaYoshiaki Takeuchi
    • Keisuke KawamuraAkira YamadaHiroshi MashimaYoshiaki Takeuchi
    • H05H1/46C23C16/509C23F1/00H01J37/32H01L21/205H01L21/3065
    • H01J37/32155H01J37/32091
    • An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
    • 本发明的目的是提供一种高频等离子体发生装置和方法,与现有的装置相比,能够进一步提高基板上膜厚度的均匀性。 在反应室(1)中设置接地电极(3),放电电极(2)与接地电极(3)相对设置。 作为处理对象的基板(4)与接地电极(3)紧密接触。 向放电电极(2)施加高频电压,以在接地电极和放电电极之间产生等离子体。 RF电源(15)产生第一高频电压,并且在放电电极(2)的侧面部分上的馈电点(9)上输出产生的电压。 RF电源(16)产生第二高频电压,并且在放电电极(2)的另一侧面部分上的馈电点(9)上输出产生的电压。 这里,第二高频电压具有与第一高频电压相同的频率,并且具有随着由预定调制信号调制的低频信号而变化的相位。
    • 128. 发明授权
    • Ferroelectric random access memory with isolation transistors coupled between a sense amplifier and an equalization circuit
    • 铁电随机存取存储器,其隔离晶体管耦合在读出放大器和均衡电路之间
    • US06671200B2
    • 2003-12-30
    • US10372886
    • 2003-02-26
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • Ryu OgiwaraDaisaburo TakashimaSumio TanakaYukihito OowakiYoshiaki Takeuchi
    • G11C1122
    • G11C11/22
    • A chain type ferroelectric random access memory has a memory cell unit comprising ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier, and that a value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.
    • 链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元,连接到存储单元单元的电极的板线,连接到存储单元单元的另一个电极的位线 通过开关晶体管,放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管,并且作为栅极电压的最小值 在板线电压升高和比较放大期间获得的晶体管的晶体管小于作为板线电压下降期间获得的晶体管中的栅极电压的最大值和比较放大的值。 利用这些特征,存储单元中的累积电荷的减小减少,并且在读/写操作期间阻止了干扰的发生。