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    • 127. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • 半导体集成电路
    • US20100052795A1
    • 2010-03-04
    • US12540248
    • 2009-08-12
    • Takahiro NakamuraTomomitsu KitamuraTaizo YamawakiTakayasu NorimatsuToshiya Uozumi
    • Takahiro NakamuraTomomitsu KitamuraTaizo YamawakiTakayasu NorimatsuToshiya Uozumi
    • H03L7/099
    • H03J3/20H03B5/1215H03B5/1228H03B5/1243H03B5/1265H03B5/1293H03J2200/10
    • The present invention provides a semiconductor integrated circuit capable of reducing a chip occupied area and reducing variations in control gain of a digitally controlled oscillator. The semiconductor integrated circuit is equipped with the digitally controlled oscillator. The digitally controlled oscillator comprises oscillation transistors and a resonant circuit. The resonant circuit comprises inductances, a frequency coarse-tuning variable capacitor array and a frequency fine-tuning variable capacitor array. The frequency coarse-tuning variable capacitor array comprises a plurality of coarse-tuning capacitor unit cells. The frequency fine-tuning variable capacitor array comprises a plurality of fine-tuning capacitor unit cells. The capacitance values of the coarse-tuning capacitor unit cells of the frequency coarse-tuning variable capacitor array are set in accordance with a binary weight 2M−1. The capacitance values of the fine-tuning capacitor unit cells of the frequency fine-tuning variable capacitor array are also set in accordance with a binary weight 2N−1.
    • 本发明提供一种能够减少芯片占用面积并减少数字控制振荡器的控制增益的变化的半导体集成电路。 半导体集成电路配有数字控制振荡器。 数字控制振荡器包括振荡晶体管和谐振电路。 谐振电路包括电感,频率粗调可变电容器阵列和频率微调可变电容器阵列。 频率粗调可变电容器阵列包括多个粗调谐电容器单元。 频率微调可变电容器阵列包括多个微调电容器单元。 频率粗调可变电容器阵列的粗​​调电容器单元的电容值根据二进制权重2M-1来设定。 频率微调可变电容器阵列的微调电容器单元的电容值也根据二进制权重2N-1设定。