专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

121. 发明申请

US20090288985A1 Process for producing light olefins and aromatics 有权
标题翻译：轻质烯烃和芳族化合物的制备方法
公开(公告)号：US20090288985A1
公开(公告)日：2009-11-26
申请号：US10592166
申请日：2005-03-08
申请人： Jun Long , Zhijian Da , Dadong Li , Xieqing Wang , Xingtian Shu , Jiushun Zhang , Hong Nie , Chaogang Xie , Zhigang Zhang , Wei Wang
发明人： Jun Long , Zhijian Da , Dadong Li , Xieqing Wang , Xingtian Shu , Jiushun Zhang , Hong Nie , Chaogang Xie , Zhigang Zhang , Wei Wang
IPC分类号： C10G45/00 , C10G51/02
CPC分类号： C10G69/04 , C07C4/06 , C07C5/05 , C07C5/11 , C10G11/18 , C10G69/02 , C10G69/06 , C10G69/14 , C10G2300/1044 , C10G2300/1055 , C10G2300/107 , C10G2300/1074 , C10G2300/1077 , C10G2300/301 , C10G2300/4006 , C10G2300/4018 , C10G2300/4093 , C10G2300/44 , C10G2300/807 , C10G2400/20 , C10G2400/30
摘要： A process for producing light olefins and aromatics, which comprises reacting a feedstock with a catalytic cracking catalyst in at least two reaction zones, wherein the reaction temperature of at least one reaction zone downstream of the first reaction zone is higher than that of the first reaction zone and its weight hourly space velocity is lower than that of the first reaction zone. The spent catalyst is separated from the reaction product vapor, regenerated and then returned to the reactor. The reaction product vapor is separated to obtain the desired products, light olefins and aromatics. This process efficiently produces light olefins such as propylene, ethylene, etc. from heavy feedstocks, wherein the yield of propylene exceeds 20% by weight, and produces aromatics such as toluene, xylene, etc. at the same time.
摘要翻译：一种用于生产轻质烯烃和芳族化合物的方法，其包括在至少两个反应区中使原料与催化裂化催化剂反应，其中第一反应区下游的至少一个反应区的反应温度高于第一反应的反应温度其重量时空速度低于第一反应区。将废催化剂与反应产物蒸气分离，再生，然后返回反应器。将反应产物蒸气分离以获得所需产物，轻质烯烃和芳族化合物。该方法从重质原料中有效地生产轻质烯烃如丙烯，乙烯等，其中丙烯的产率超过20重量％，同时产生芳烃如甲苯，二甲苯等。

122. 发明申请

US20090285439A1 Electroacoustic transducing device 失效
标题翻译：电声转换装置
公开(公告)号：US20090285439A1
公开(公告)日：2009-11-19
申请号：US12453496
申请日：2009-05-13
申请人： Hideo Yuasa , Hidenori Motonaga , Katsunari Fujita , Wei Wang
发明人： Hideo Yuasa , Hidenori Motonaga , Katsunari Fujita , Wei Wang
IPC分类号： H04R1/00
CPC分类号： H04R1/06 , H04R2499/11
摘要： According to the invention, in an electroacoustic transducing device comprising: a magnetic circuit 13 having a yoke 4, a magnet 11, and a pole piece 12; a vibration system 16 having a diaphragm 14 and a voice coil 15; and a frame 1 which holds the magnetic circuit 13 and the vibration system 16, the voice coil 15 being placed in a magnetic gap 30, lead wires 17, 18 of the voice coil 15 are drawn out from the voice coil 15 at positions which are remote from the diaphragm 14, and openings 7A, 7B for air forming for forming slack portions 31, 32 in the lead wires 17, 18 drawn out from the voice coil 15 are disposed in the frame 1. The lead wires 17, 18 are adequately subjected to the wire laying process, and the audio performance is prevented from being lowered.
摘要翻译：根据本发明，在一种电声转换装置中，包括：具有轭4，磁体11和极片12的磁路13; 具有隔膜14和音圈15的振动系统16; 和保持磁路13和振动系统16的框架1，将音圈15放置在磁隙30中，将音圈15的引线17,18从音圈15拉出，远离隔膜14的空气形成开口7A，7B，用于形成用于形成从音圈15拉出的引线17,18中的松弛部31,32的开口7A，7B设置在框架1中。引线17,18充分进行布线处理，防止音频性能下降。

123. 发明申请

US20090228313A1 METHOD AND SYSTEM FOR DETERMINING SERVICE AREA OF SUPPLY CHAIN BY SIMULATING SERVICE CYCLE TIME 失效
标题翻译：通过模拟维修周期确定供应链服务区的方法和系统
公开(公告)号：US20090228313A1
公开(公告)日：2009-09-10
申请号：US12043540
申请日：2008-03-06
申请人： Hong Wei Ding , Jin Dong , Young Min Lee , Changrui Ren , Wei Wang
发明人： Hong Wei Ding , Jin Dong , Young Min Lee , Changrui Ren , Wei Wang
IPC分类号： G06Q10/00
CPC分类号： G06Q10/08 , G06Q10/04
摘要： A method and system for determining supply chain service area by simulating service cycle time. A plurality of simulation parameters including stochastic factors are used with a supply chain simulation model. The supply chain simulation model is run repeatedly and generated simulated data is analyzed to determine service cycle time. The service cycle time is used to compute service area for a facility.
摘要翻译：一种通过模拟服务周期时间来确定供应链服务区域的方法和系统。包括随机因素的多个模拟参数与供应链仿真模型一起使用。供应链仿真模型重复运行，生成模拟数据，确定服务周期时间。服务周期时间用于计算设施的服务区域。

124. 发明申请

US20090166740A1 Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection 有权
标题翻译：降低了具有静电放电（ESD）电路保护功率的MOSFET的掩模配置
公开(公告)号：US20090166740A1
公开(公告)日：2009-07-02
申请号：US12006398
申请日：2007-12-31
申请人： Anup Bhalla , Xiaobin Wang , Wei Wang , Yi Su , Daniel Ng
发明人： Anup Bhalla , Xiaobin Wang , Wei Wang , Yi Su , Daniel Ng
IPC分类号： H01L27/088 , H01L21/8234 , H01L29/06
CPC分类号： H01L29/7811 , H01L27/0255 , H01L29/0619 , H01L29/0696 , H01L29/404 , H01L29/66734 , H01L29/7808 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor power device supported on a semiconductor substrate includes an electrostatic discharge (ESD) protection circuit disposed on a first portion of patterned ESD polysilicon layer on top of the semiconductor substrate. The semiconductor power device further includes a second portion of the patterned ESD polysilicon layer constituting a body implant ion block layer for blocking implanting body ions to enter into the semiconductor substrate below the body implant ion block layer. In an exemplary embodiment, the electrostatic discharge (ESD) polysilicon layer on top of the semiconductor substrate further covering a scribe line on an edge of the semiconductor device whereby a passivation layer is no longer required manufacturing the semiconductor device for reducing a mask required for patterning the passivation layer.
摘要翻译：支撑在半导体衬底上的半导体功率器件包括设置在半导体衬底顶部的图案化ESD多晶硅层的第一部分上的静电放电（ESD）保护电路。该半导体功率器件还包括构图的ESD多晶硅层的第二部分，其构成体部注入离子阻挡层，用于阻止注入体离子进入体内注入离子阻挡层下方的半导体衬底。在示例性实施例中，半导体衬底顶部上的静电放电（ESD）多晶硅层进一步覆盖半导体器件边缘上的划线，由此不再需要钝化层制造用于减少图案所需掩模的半导体器件钝化层。

125. 发明授权

US07532190B2 Multi-resolution driver device 有权
标题翻译：多分辨率驱动装置
公开(公告)号：US07532190B2
公开(公告)日：2009-05-12
申请号：US10916361
申请日：2004-08-10
申请人： Hsiao-Yi Lin , Wei Wang , Chaung-Ming Chiu , Yu-Yun Hsu
发明人： Hsiao-Yi Lin , Wei Wang , Chaung-Ming Chiu , Yu-Yun Hsu
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2340/0414
摘要： A driver device for providing multi-resolution modes for a display device, a liquid crystal display panel for example, is provided in this invention. This display driver includes a pixel circuit and a gate driving circuit. The gate driving circuit is coupled to the pixel circuit via a plurality of gate lines and determines either an original gate driving signal or a target gate driving signal to be the gate drive signal in response to the gate control signal. Wherein a switch circuit is configured for switching between the original driving signal and the target gate driving signal via a plurality of switches corresponding to shift registers therein. A source driving circuit is further incorporated in this present invention to configure a multi-resolution display device, coupled to the pixel circuit via a plurality of source lines and outputs the source driving signal in response to a source control signal.
摘要翻译：本发明提供了一种用于为显示装置提供多分辨率模式的驱动装置，例如液晶显示面板。该显示驱动器包括像素电路和栅极驱动电路。栅极驱动电路经由多条栅极线耦合到像素电路，并且响应于栅极控制信号确定原始栅极驱动信号或目标栅极驱动信号为栅极驱动信号。其中开关电路被配置为经由与其中的移位寄存器对应的多个开关在原始驱动信号和目标栅极驱动信号之间切换。在本发明中还包括一个源极驱动电路，以配置一个多分辨率显示器件，它通过多个源极线耦合到像素电路，并响应源极控制信号输出源极驱动信号。

126. 发明申请

US20090093381A1 Solid phase electrochemical synthesis with controlled product cleavage 有权
标题翻译：固相电化学合成与控制产物切割
公开(公告)号：US20090093381A1
公开(公告)日：2009-04-09
申请号：US12315895
申请日：2008-12-08
申请人： Wei Wang , Yuan Gao
发明人： Wei Wang , Yuan Gao
IPC分类号： C40B50/18 , C40B60/14
CPC分类号： C25B3/00 , G01N27/226 , H01M14/00
摘要： Methods for electrochemically synthesizing polymers are provided in which a cleavable linker is coupled to the surface of at least one electrode of an array of electrodes on a substrate and a polymer coupled to the cleavable linker is synthesized through a series of monomer addition cycles. Polymers that are synthesized include nucleic acids and peptides. Cleavable linkers include linkers that can be cleaved under conditions such as reducing, oxidizing, acidic, and or basic conditions. Additionally, provided are devices that comprise an array of individually addressable electrodes having surface-attached cleavable linker molecules.
摘要翻译：提供了电化学合成聚合物的方法，其中可切割接头与基底上的电极阵列的至少一个电极的表面偶联，并且通过一系列单体加成循环合成与可切割接头相连的聚合物。合成的聚合物包括核酸和肽。可切割接头包括可在诸如还原，氧化，酸性和/或碱性条件的条件下裂解的接头。另外，提供了包括具有表面附着的可切割连接子分子的单独可寻址电极的阵列的装置。

127. 发明申请

US20090080847A1 OPTICAL WAVEGUIDE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：光波导及其制造方法
公开(公告)号：US20090080847A1
公开(公告)日：2009-03-26
申请号：US12271295
申请日：2008-11-14
申请人： Mingda SHAO , Guoqing Yu , Qinqin Xu , Wenlong Wang , Wei Wang
发明人： Mingda SHAO , Guoqing Yu , Qinqin Xu , Wenlong Wang , Wei Wang
IPC分类号： G02B6/02
CPC分类号： G02B6/136 , G02B6/1221 , G02B6/4214 , G02B6/43
摘要： The present invention provides a wafer level optical waveguide and a method for manufacturing the same, wherein it can be realized by employing manufacture process for semiconductor integrated circuits to manufacture a micron optical waveguide with a smooth interface, uniform thickness and a mirror-like end with any angle, and to remarkably reduce its manufacture cost at the meantime.
摘要翻译：本发明提供一种晶片级光波导及其制造方法，其可以通过采用半导体集成电路的制造工艺来制造具有平滑界面，均匀厚度和镜面端的微米光波导，任何角度，并同时显着降低其制造成本。

128. 发明申请

US20090057868A1 Wafer Level Chip Size Package For MEMS Devices And Method For Fabricating The Same 有权
标题翻译：用于MEMS器件的晶圆级芯片尺寸封装及其制造方法
公开(公告)号：US20090057868A1
公开(公告)日：2009-03-05
申请号：US12132641
申请日：2008-06-04
申请人： Zhiqi Wang , Guoqing Yu , Qinqin Xu , Wei Wang
发明人： Zhiqi Wang , Guoqing Yu , Qinqin Xu , Wei Wang
IPC分类号： H01L23/04 , H01L21/50
CPC分类号： H01L23/10 , B81B2207/097 , B81C1/00301 , B81C2203/0118 , H01L23/3114 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a wafer level chip size package having cavities within which micro-machined parts are free to move, allowing access to electrical contacts, and optimized for device performance. Also a method for fabricating a wafer level chip size package for MEMS devices is disclosed. This packaging method provides a well packed device with the size much closely to the original one, making it possible to package the whole wafer at the same time and therefore, saves the cost and cycle time.
摘要翻译：本发明提供一种具有空腔的晶片级芯片尺寸封装，其中微加工部件可自由移动，允许接触电触点并且优化器件性能。还公开了一种用于制造用于MEMS器件的晶片级芯片尺寸封装的方法。这种包装方法提供了与原始尺寸非常接近的尺寸良好的装置，使得可以同时包装整个晶片，因此节省了成本和周期时间。

129. 发明申请

US20090027604A1 TFT LCD ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译： TFT液晶阵列基板及其制造方法
公开(公告)号：US20090027604A1
公开(公告)日：2009-01-29
申请号：US12126280
申请日：2008-05-23
申请人： Jian GUO , Wei Wang , Kiyong Kim
发明人： Jian GUO , Wei Wang , Kiyong Kim
IPC分类号： G02F1/1333
CPC分类号： H01L27/1288 , H01L27/0248 , H01L27/124
摘要： Provided are a thin film transistor liquid crystal array substrate and a method of manufacturing the same. The thin film transistor liquid crystal display array substrate includes: a substrate, a gate scanning line and a signal scanning line formed on the substrate and intersecting each other, an insulating layer and an active layer formed between the gate scanning line and the signal scanning line, wherein an air gap is formed between the insulating layer and the active layer at the intersection of the gate scanning line and the signal scanning line.
摘要翻译：提供一种薄膜晶体管液晶阵列基板及其制造方法。薄膜晶体管液晶显示阵列基板包括：基板，栅极扫描线和形成在基板上并彼此交叉的信号扫描线，形成在栅极扫描线和信号扫描线之间的绝缘层和有源层其特征在于，在栅极扫描线与信号扫描线的交点处，在绝缘层和有源层之间形成气隙。

130. 发明授权

US07476558B2 Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure 有权
标题翻译：选择性区域生长层叠电吸收调制激光器结构的制造方法
公开(公告)号：US07476558B2
公开(公告)日：2009-01-13
申请号：US11215637
申请日：2005-08-30
申请人： Hongliang Zhu , Wei Wang
发明人： Hongliang Zhu , Wei Wang
IPC分类号： H01L21/00
CPC分类号： H01S5/0265 , B82Y20/00 , G02F1/01708 , H01S5/1039 , H01S5/12 , H01S2304/00
摘要： This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.
摘要翻译：本发明涉及选择性区域生长层叠电吸收调制激光器结构的制造方法，其特征在于，包括：工序1：在衬底上形成调制部的选择生长图案; 步骤2：通过第一外延步骤同时生长调制器MQW层和激光MQW层的2层叠层有源区结构; 步骤3：蚀刻光栅，并通过选择性蚀刻去除调制器部分中的激光MQW层; 步骤4：通过第二外延步骤完成整个电吸收调制激光器结构的生长。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式