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121. 发明授权

US06432757B1 Method of manufacturing liquid crystal display panel by poly-crystallizing amorphous silicon film using both a laser and lamp lights 失效
标题翻译：通过使用激光和灯光来使多晶非晶硅膜制造液晶显示面板的方法
公开(公告)号：US06432757B1
公开(公告)日：2002-08-13
申请号：US09639418
申请日：2000-08-14
申请人： Takashi Noguchi , Setsuo Usui
发明人： Takashi Noguchi , Setsuo Usui
IPC分类号： H01L2100
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L21/67115 , H01L27/1214 , H01L27/1222 , H01L27/1274 , H01L27/1296
摘要： Provided is a method of manufacturing a monolithic liquid crystal display panel with a large area and high-image quality. A protecting film and an amorphous silicon film are sequentially formed on an insulating substrate. Annealing is performed on a region intended for pixel area formation by irradiating ultraviolet rays by a ultraviolet ray lamp, whereas annealing is performed on a region intended for horizontal scan area formation and a region intended for vertical scan area formation by irradiating an excimer laser at the same time, respectively. Thus obtained polycrystalline silicon film formed on the region intended for pixel area formation has uniform crystal grains while polycrystalline silicon films formed on the region intended for horizontal scan area formation and the region for vertical scan area formation have larger crystal grains. Thin-film transistors are formed in these regions, respectively. Accordingly, a monolithic liquid crystal display panel with a large area and high-image quality is manufactured.
摘要翻译：提供一种具有大面积和高图像质量的单片液晶显示面板的制造方法。在绝缘基板上依次形成保护膜和非晶硅膜。通过用紫外线灯照射紫外线，在用于像素区域形成的区域上进行退火，而对于用于水平扫描区域形成的区域和用于垂直扫描区域形成的区域进行退火，同时分别。形成在用于像素区域形成的区域上的这样获得的多晶硅膜具有均匀的晶粒，而形成在用于水平扫描区域形成的区域上的多晶硅膜和用于垂直扫描区域形成的区域具有较大的晶粒。在这些区域分别形成薄膜晶体管。因此，制造了具有大面积和高图像质量的单片液晶显示面板。

122. 发明授权

US06172380B2 Semiconductor material 失效
标题翻译：半导体材料
公开(公告)号：US06172380B2
公开(公告)日：2001-01-09
申请号：US09187224
申请日：1998-11-06
申请人： Takashi Noguchi , Yuji Ikeda
发明人： Takashi Noguchi , Yuji Ikeda
IPC分类号： H01L2904
CPC分类号： H01L29/1602 , H01L29/045 , H01L29/16
摘要： A semiconductor material having more excellent electric characteristics than polycrystalline semiconductor materials and readily formed on various kinds of substrates is provided. The semiconductor material is made of substantially single crystalline semiconductor crystal grains 3a. These crystal grains 3a are preferentially oriented in a common surface orientation, such as {100}, {111} or {110}-orientation, and grain boundaries 3b of adjacent ones of the crystal grains 3a are in substantial lattice matching with each other at least in a part thereof. In case of {100} orientation, each crystal grain 3a has an approximately square shape, and they are regularly aligned in rows and columns. In case of {111} orientation, each crystal grain 3a has an approximately equilateral hexagonal shape, and they are aligned in an equilateral turtle shell pattern. In case of {110} orientation, each crystal grain 3a has an approximately hexagonal shape, and they are aligned in a turtle shell pattern. The semiconductor forming the crystal grains 3a is a group IV semiconductor having a diamond-type crystal structure, such as Si, Ge and C.
摘要翻译：提供了具有比多晶半导体材料更优异的电特性并容易形成在各种基板上的半导体材料。半导体材料由基本上单晶半导体晶粒3a制成。这些晶粒3a优选以公共的表面取向取向，例如{100}，{111}或{110}取向，相邻的晶粒3a的晶界3b彼此实质上晶格匹配至少在一部分。在{100}取向的情况下，每个晶粒3a具有近似正方形的形状，并且它们被规则地排列成行和列。在{111}取向的情况下，每个晶粒3a具有大致等边六边形，并且它们以等边龟壳图案对准。在{110}取向的情况下，每个晶粒3a具有大致六边形形状，并且以乌龟壳图案对准。形成晶粒3a的半导体是具有诸如Si，Ge和C的金刚石型晶体结构的IV族半导体。

123. 发明授权

US6107679A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US6107679A
公开(公告)日：2000-08-22
申请号：US200964
申请日：1998-11-30
申请人： Takashi Noguchi
发明人： Takashi Noguchi
IPC分类号： H01L23/28 , H01L23/12 , H01L23/13 , H01L23/29 , H01L23/31 , H01L23/48 , H01L23/52
CPC分类号： H01L24/97 , H01L23/13 , H01L23/3121 , H01L24/32 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/97 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/14 , H01L2924/15151 , H01L2924/15159 , H01L2924/15183 , H01L2924/15184 , H01L2924/181 , H01L2924/1815 , H01L2924/18301
摘要： A semiconductor device according to the invention of the present application comprises a base material having a surface on which conductive circuits are formed, a resist film for covering the base material in a state in which peripheral portions of the base material and portions of the conductive circuits are bare, a semiconductor elemental device mounted on the base material and connected to the bare portions of the conductive circuits and electrodes thereof, and a sealing body for sealing the semiconductor elemental device in an area including a range from the resist film for covering the base material to the bare portions. Owing to the provision of the resist in the exposed state of the portions of the base material, the sealing body and the base material are firmly bonded to one another therebetween so that they can be restrained from peeling.
摘要翻译：根据本发明的本发明的半导体器件包括具有形成有导电电路的表面的基材，在基材的周边部分和导电电路的一部分的状态下覆盖基材的抗蚀剂膜是裸露的，安装在基底材料上并连接到导电电路及其电极的裸露部分的半导体元件，以及密封体，用于将半导体元件装置密封在包括抗蚀剂膜的范围的区域中，以覆盖基底材料到裸露部分。由于在基材的部分的暴露状态下设置抗蚀剂，所以密封体和基材牢固地粘合在一起，使得它们可以被抑制剥离。

124. 发明授权

US6080643A Elimination of dehydrogenation step when forming a silicon thin film device by low-temperature laser-annealing 失效
标题翻译：通过低温激光退火形成硅薄膜器件时，消除脱氢步骤
公开(公告)号：US6080643A
公开(公告)日：2000-06-27
申请号：US021826
申请日：1998-02-11
申请人： Takashi Noguchi , Hajime Yagi , Yasuhiro Kanaya
发明人： Takashi Noguchi , Hajime Yagi , Yasuhiro Kanaya
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/36
CPC分类号： H01L21/2026
摘要： Disclosed is a process of forming a silicon thin film used as an active layer of a thin film transistor, which process is improved for enhancing a quality and a productivity of the silicon thin film. At a physical vapor deposition step, an amorphous silicon thin film is physically formed on a substrate in vacuum. Then, at a laser annealing step, directly after formation of the amorphous silicon thin film without the need of dehydrogenation, a laser light is irradiated to the amorphous silicon thin film, to convert the amorphous silicon thin film into a polycrystalline silicon thin film. After that, the polycrystalline silicon thin film thus converted is processed to form a thin film transistor. In the physical vapor deposition step, an amorphous silicon thin film may be formed by sputtering using a target made from a silicon crystal body or a silicon sintered body. In the sputtering, an amorphous silicon thin film can be formed by sputtering using a target previously mixed with an impurity in a desired concentration. By introducing an impurity in the amorphous silicon thin film at the film formation stage, a threshold characteristic of a thin film transistor can be previously controlled.
摘要翻译：公开了形成用作薄膜晶体管的有源层的硅薄膜的工艺，该方法被改进以提高硅薄膜的质量和生产率。在物理气相沉积步骤中，非晶硅薄膜在真空中物理地形成在衬底上。然后，在激光退火工序中，直接在形成非晶硅薄膜而不需要脱氢之后，向非晶硅薄膜照射激光，将非晶硅薄膜转换为多晶硅薄膜。之后，将这样转换的多晶硅薄膜加工成薄膜晶体管。在物理气相沉积步骤中，可以使用由硅晶体或硅烧结体制成的靶通过溅射形成非晶硅薄膜。在溅射中，可以使用预先与期望浓度的杂质混合的靶通过溅射形成非晶硅薄膜。通过在成膜阶段引入非晶硅薄膜中的杂质，可以预先控制薄膜晶体管的阈值特性。

125. 发明授权

US6080239A Method of growing single semiconductor crystal and semiconductor device with single semiconductor crystal 失效
标题翻译：单晶半导体晶体和单晶半导体器件生长方法
公开(公告)号：US6080239A
公开(公告)日：2000-06-27
申请号：US795338
申请日：1997-02-04
申请人： Takashi Noguchi
发明人： Takashi Noguchi
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L29/786 , C30B25/12
CPC分类号： H01L29/66772 , H01L21/2026 , H01L27/1281 , H01L29/78654 , Y10S117/904
摘要： A semiconductor film deposited on a substrate has regions of different thermal conductivity. A pulsed laser radiation is applied to the semiconductor film to melt the semiconductor film. When the melted semiconductor film is cooled and solidified, localized low-temperature regions are developed in the respective regions of different thermal conductivity. Crystal nuclei are produced in the respective localized low-temperature regions and grown into a single semiconductor crystal. The regions of different thermal conductivity are formed in the semiconductor film by high-thermal-conductivity members deposited on the semiconductor film in thermally coupled relationship thereto. A semiconductor device is fabricated using the semiconductor film and has channels disposed in the vicinity of the crystal nuclei.
摘要翻译：沉积在基板上的半导体膜具有不同导热性的区域。将脉冲激光辐射施加到半导体膜以熔化半导体膜。当熔融的半导体膜被冷却和固化时，在不同热导率的各个区域中形成局部低温区域。在各自的局部低温区域产生晶核，并生长成单个半导体晶体。通过以与热耦合的关系沉积在半导体膜上的高导热性部件，在半导体膜中形成不同导热率的区域。使用半导体膜制造半导体器件，并且具有设置在晶核附近的沟道。

126. 发明授权

US5943593A Method for fabricating thin film transistor device 失效
标题翻译：制造薄膜晶体管器件的方法
公开(公告)号：US5943593A
公开(公告)日：1999-08-24
申请号：US83926
申请日：1998-05-22
申请人： Takashi Noguchi , Yasushi Shimogaichi
发明人： Takashi Noguchi , Yasushi Shimogaichi
IPC分类号： H01L21/20 , H01L21/336
CPC分类号： H01L29/66765 , H01L21/2026 , Y10S117/904 , Y10S148/091
摘要： A method for crystallizing a portion of a semiconductor thin film while forming a semiconductor device comprises providing a transparent substrate supporting a metallic gate electrode and an amorphous semiconductor thin film which are separated from each other by a gate insulating film, heating the gate electrode by subjecting it to light rays, and applying a laser beam to the amorphous semiconductor thin film so that the portion of the semiconductor thin film adjacent the metallic gate electrode is heated by both the laser beam and the heat of the gate electrode to cause a crystallization of a portion of the amorphous thin film and then processing the remaining amorphous portions of the thin film to form the transistor structure.
摘要翻译：在形成半导体器件的同时使半导体薄膜的一部分结晶的方法包括：通过栅绝缘膜提供支撑金属栅极和非晶半导体薄膜的透明基板，通过对栅电极进行加热并将激光束施加到非晶半导体薄膜上，使得与金属栅电极相邻的半导体薄膜的部分被激光束和栅电极的热量加热，从而导致结晶化然后处理薄膜的剩余非晶部分以形成晶体管结构。

127. 发明授权

US5890585A Limit switch mounting structure for a linear actuator 失效
标题翻译：用于线性执行器的限位开关安装结构
公开(公告)号：US5890585A
公开(公告)日：1999-04-06
申请号：US818276
申请日：1997-03-18
申请人： Kenichiro Nakamura , Toshio Mitsuyama , Takashi Noguchi
发明人： Kenichiro Nakamura , Toshio Mitsuyama , Takashi Noguchi
IPC分类号： F15B15/28 , F16H25/20 , F16H25/22 , H01H3/16 , H01H9/02
CPC分类号： H01H3/16 , H01H9/0207
摘要： A linear actuator in which the number of limit switches to be mounted, as well as the mounting position and direction of limit switches, can be selected with a high degree of freedom, the limit switch mounting spacing can be made short, and a positive operation is ensured while using a small number of components. Flat limit switch mounting flanges are fixed onto an outer cylinder of a linear actuator so that their positions are adjustable in both axial and circumferential directions of the outer cylinder, and a guide rail for slidably guiding a striker is supported by and between the limit switch mounting flanges. The striker is connected with the actuator rod of the actuator by a connecting rod. With projection or retraction of the actuating rod, the striker moves and actuates limit switches attached to the associated limit switch mounting flanges.
摘要翻译：可以以高自由度选择要安装的限位开关的数量以及限位开关的安装位置和方向的线性致动器，可以使限位开关的安装间隔变短，并且正的操作在使用少量组件的同时确保。平面限位开关安装法兰被固定在线性致动器的外筒上，使得它们的位置在外筒的轴向和圆周方向均可调节，并且用于可滑动地引导撞针的导轨由限位开关安装法兰。撞针通过连杆与致动器的致动杆连接。通过致动杆的突出或缩回，撞针移动并致动附接到相关联的限位开关安装法兰的限位开关。

128. 发明授权

US5663579A Method of growing single semiconductor crystal and semiconductor device with single semiconductor crystal 失效
标题翻译：单晶半导体晶体和单晶半导体器件生长方法
公开(公告)号：US5663579A
公开(公告)日：1997-09-02
申请号：US159565
申请日：1993-12-01
申请人： Takashi Noguchi
发明人： Takashi Noguchi
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L29/786 , H01L27/108 , H01L29/04 , H01L29/76 , H01L21/26
CPC分类号： H01L29/66772 , H01L21/2026 , H01L27/1281 , H01L29/78654 , Y10S117/904
摘要： A semiconductor film deposited on a substrate has regions of different thermal conductivity. A pulsed laser radiation is applied to the semiconductor film to melt the semiconductor film. When the melted semiconductor film is cooled and solidified, localized low-temperature regions are developed in the respective regions of different thermal conductivity. Crystal nuclei are produced in the respective localized low-temperature regions and grown into a single semiconductor crystal. The regions of different thermal conductivity are formed in the semiconductor film by high-thermal-conductivity members deposited on the semiconductor film in thermally coupled relationship thereto. A semiconductor device is fabricated using the semiconductor film and has channels disposed in the vicinity of the crystal nuclei.
摘要翻译：沉积在基板上的半导体膜具有不同导热性的区域。将脉冲激光辐射施加到半导体膜以熔化半导体膜。当熔融的半导体膜被冷却和固化时，在不同热导率的各个区域中形成局部低温区域。在各自的局部低温区域产生晶核，并生长成单个半导体晶体。通过以与热耦合的关系沉积在半导体膜上的高导热性部件，在半导体膜中形成不同导热率的区域。使用半导体膜制造半导体器件，并且具有设置在晶核附近的沟道。

129. 发明授权

US5643806A Manufacturing method for making bipolar device 失效
标题翻译：制造双极器件的方法
公开(公告)号：US5643806A
公开(公告)日：1997-07-01
申请号：US472869
申请日：1995-06-07
申请人： Hiroyuki Miwa , Shigeru Kanematsu , Takayuki Gomi , Hiroaki Anmo , Takashi Noguchi , Katsuyuki Kato , Hirokazu Ejiri , Norikazu Ouchi
发明人： Hiroyuki Miwa , Shigeru Kanematsu , Takayuki Gomi , Hiroaki Anmo , Takashi Noguchi , Katsuyuki Kato , Hirokazu Ejiri , Norikazu Ouchi
IPC分类号： H01L21/331 , H01L29/732 , H01L21/265
CPC分类号： H01L29/7322 , H01L29/66272 , Y10S148/01 , Y10S148/011
摘要： A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole.
摘要翻译：一种半导体器件及其制造方法，其可以通过减小基极宽度同时实现基极通过时间的减少，并且通过降低基极电阻降低基极电阻。半导体器件通过包括以下步骤的方法制造：在半导体衬底中形成第一导电类型的第一杂质扩散层; 形成连接到第一杂质扩散层的导电膜; 在导电膜上形成第一绝缘膜; 通过由第一绝缘膜和导电膜构成的层压膜形成第一孔; 在暴露于第一孔的半导体衬底中形成第一导电类型的第二杂质扩散层; 从所述第一孔中的第二绝缘膜形成侧壁以形成第二孔; 以及在暴露于第二孔的半导体衬底中形成第一导电类型的第三杂质扩散层。

130. 发明授权

US5541124A Method for making bipolar transistor having double polysilicon structure 失效
标题翻译：制造具有双重多晶硅结构的双极晶体管的方法
公开(公告)号：US5541124A
公开(公告)日：1996-07-30
申请号：US477471
申请日：1995-06-07
申请人： Hiroyuki Miwa , Shigeru Kanematsu , Takayuki Gomi , Hiroaki Anmo , Takashi Noguchi , Katsuyuki Kato , Hirokazu Ejiri , Norikazu Ouchi
发明人： Hiroyuki Miwa , Shigeru Kanematsu , Takayuki Gomi , Hiroaki Anmo , Takashi Noguchi , Katsuyuki Kato , Hirokazu Ejiri , Norikazu Ouchi
IPC分类号： H01L21/331 , H01L29/732 , H01L21/265
CPC分类号： H01L29/7322 , H01L29/66272 , Y10S148/01 , Y10S148/011
摘要： A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole.
摘要翻译：一种半导体器件及其制造方法，其可以通过减小基极宽度同时实现基极通过时间的减少，并且通过降低基极电阻降低基极电阻。半导体器件通过包括以下步骤的方法制造：在半导体衬底中形成第一导电类型的第一杂质扩散层; 形成连接到第一杂质扩散层的导电膜; 在导电膜上形成第一绝缘膜; 通过由第一绝缘膜和导电膜构成的层压膜形成第一孔; 在暴露于第一孔的半导体衬底中形成第一导电类型的第二杂质扩散层; 从所述第一孔中的第二绝缘膜形成侧壁以形成第二孔; 以及在暴露于第二孔的半导体衬底中形成第一导电类型的第三杂质扩散层。

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